SG10201800448XA - Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target - Google Patents
Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium TargetInfo
- Publication number
- SG10201800448XA SG10201800448XA SG10201800448XA SG10201800448XA SG10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA
- Authority
- SG
- Singapore
- Prior art keywords
- photomask
- preparing
- blank
- photomask blank
- metallic chromium
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/06—Metal silicides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
- C01B21/0823—Silicon oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/06—Alloys based on chromium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target 5 A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on 10 the photomask is minimized. [FIG. 1]
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017021753 | 2017-02-09 | ||
JP2017027772 | 2017-02-17 | ||
JP2017091847 | 2017-05-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201800448XA true SG10201800448XA (en) | 2018-09-27 |
Family
ID=61094323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201800448XA SG10201800448XA (en) | 2017-02-09 | 2018-01-17 | Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target |
Country Status (6)
Country | Link |
---|---|
US (1) | US10782608B2 (en) |
EP (1) | EP3361314B1 (en) |
JP (1) | JP7027895B2 (en) |
CN (1) | CN108415218B (en) |
SG (1) | SG10201800448XA (en) |
TW (1) | TWI813556B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008061843B4 (en) | 2008-12-15 | 2018-01-18 | Novaled Gmbh | Heterocyclic compounds and their use in electronic and optoelectronic devices |
JPWO2021187517A1 (en) * | 2020-03-17 | 2021-09-23 | ||
JP7331793B2 (en) * | 2020-06-30 | 2023-08-23 | 信越化学工業株式会社 | Photomask manufacturing method and photomask blank |
JP2022045198A (en) | 2020-09-08 | 2022-03-18 | 凸版印刷株式会社 | Phase shift mask blank, phase shift mask, and production method of phase shift mask |
JP2022137972A (en) | 2021-03-09 | 2022-09-22 | 株式会社トッパンフォトマスク | Phase-shift mask blank, phase-shift mask, method of manufacturing phase-shift mask, and method of modifying phase-shift mask |
JP2022144481A (en) * | 2021-03-19 | 2022-10-03 | 株式会社トッパンフォトマスク | Phase shift mask blank, phase shift mask and manufacturing method of phase shift mask |
JP7482197B2 (en) | 2021-12-31 | 2024-05-13 | エスケー エンパルス カンパニー リミテッド | Blank mask and photomask using same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61270760A (en) * | 1985-05-27 | 1986-12-01 | Hitachi Metals Ltd | Photomask |
US5674647A (en) | 1992-11-21 | 1997-10-07 | Ulvac Coating Corporation | Phase shift mask and manufacturing method thereof and exposure method using phase shift mask |
JP3064769B2 (en) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK |
US20040159538A1 (en) * | 2003-02-13 | 2004-08-19 | Hans Becker | Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank |
JP2005200686A (en) * | 2004-01-14 | 2005-07-28 | Jfe Steel Kk | Slag foaming inhibitor in molten iron pre-treatment and method for inhibiting slag foaming |
JP4376637B2 (en) * | 2004-01-14 | 2009-12-02 | Hoya株式会社 | Sputtering target and mask blank manufacturing method using the same |
WO2006043422A1 (en) * | 2004-10-19 | 2006-04-27 | Nichia Corporation | Semiconductor element |
JP4005622B1 (en) | 2006-09-04 | 2007-11-07 | ジオマテック株式会社 | Photomask substrate, photomask, and method of manufacturing the same |
KR20110057064A (en) * | 2009-11-23 | 2011-05-31 | 주식회사 에스앤에스텍 | Substrate for blankmask, blankmask manufactured using the same and manufacturing method thereof |
JP5795992B2 (en) * | 2012-05-16 | 2015-10-14 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
JP5739375B2 (en) | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | Halftone phase shift mask blank and method of manufacturing halftone phase shift mask |
JP6229466B2 (en) | 2013-12-06 | 2017-11-15 | 信越化学工業株式会社 | Photomask blank |
JP6564734B2 (en) | 2015-07-27 | 2019-08-21 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
-
2018
- 2018-01-10 JP JP2018001668A patent/JP7027895B2/en active Active
- 2018-01-17 SG SG10201800448XA patent/SG10201800448XA/en unknown
- 2018-01-30 US US15/883,538 patent/US10782608B2/en active Active
- 2018-01-30 EP EP18154156.6A patent/EP3361314B1/en active Active
- 2018-02-08 CN CN201810125208.4A patent/CN108415218B/en active Active
- 2018-02-08 TW TW107104424A patent/TWI813556B/en active
Also Published As
Publication number | Publication date |
---|---|
EP3361314A1 (en) | 2018-08-15 |
US10782608B2 (en) | 2020-09-22 |
JP7027895B2 (en) | 2022-03-02 |
US20180224737A1 (en) | 2018-08-09 |
CN108415218B (en) | 2023-04-07 |
TW201840865A (en) | 2018-11-16 |
CN108415218A (en) | 2018-08-17 |
TWI813556B (en) | 2023-09-01 |
EP3361314B1 (en) | 2021-09-29 |
JP2018173621A (en) | 2018-11-08 |
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