SG10201609585QA - Methods of growing uniform, large-scale, multilayer graphene films - Google Patents

Methods of growing uniform, large-scale, multilayer graphene films

Info

Publication number
SG10201609585QA
SG10201609585QA SG10201609585QA SG10201609585QA SG10201609585QA SG 10201609585Q A SG10201609585Q A SG 10201609585QA SG 10201609585Q A SG10201609585Q A SG 10201609585QA SG 10201609585Q A SG10201609585Q A SG 10201609585QA SG 10201609585Q A SG10201609585Q A SG 10201609585QA
Authority
SG
Singapore
Prior art keywords
scale
methods
multilayer graphene
graphene films
growing uniform
Prior art date
Application number
SG10201609585QA
Inventor
Kian Ping Loh
Kai Zhang
Neto Antonio Helio Castro
Original Assignee
Univ Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Singapore filed Critical Univ Singapore
Publication of SG10201609585QA publication Critical patent/SG10201609585QA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/32—Size or surface area
SG10201609585QA 2012-05-17 2013-05-17 Methods of growing uniform, large-scale, multilayer graphene films SG10201609585QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261648328P 2012-05-17 2012-05-17

Publications (1)

Publication Number Publication Date
SG10201609585QA true SG10201609585QA (en) 2017-01-27

Family

ID=49584066

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201407540TA SG11201407540TA (en) 2012-05-17 2013-05-17 Methods of growing uniform, large-scale, multilayer graphene films
SG10201609585QA SG10201609585QA (en) 2012-05-17 2013-05-17 Methods of growing uniform, large-scale, multilayer graphene films
SG10202105024SA SG10202105024SA (en) 2012-05-17 2013-05-17 Methods of growing uniform, large-scale, multilayer graphene films

Family Applications Before (1)

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SG11201407540TA SG11201407540TA (en) 2012-05-17 2013-05-17 Methods of growing uniform, large-scale, multilayer graphene films

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202105024SA SG10202105024SA (en) 2012-05-17 2013-05-17 Methods of growing uniform, large-scale, multilayer graphene films

Country Status (5)

Country Link
US (1) US20150136737A1 (en)
EP (1) EP2850032B1 (en)
CN (1) CN104334495A (en)
SG (3) SG11201407540TA (en)
WO (1) WO2013172792A1 (en)

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* Cited by examiner, † Cited by third party
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US9242865B2 (en) 2013-03-05 2016-01-26 Lockheed Martin Corporation Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
KR101553339B1 (en) * 2014-04-09 2015-09-17 연세대학교 산학협력단 Method for synthesizing halogen-functionalized carbon material and method for fabricating electron device employing the same
US10156726B2 (en) 2015-06-29 2018-12-18 Microsoft Technology Licensing, Llc Graphene in optical systems
JP2019504290A (en) 2015-10-07 2019-02-14 ザ・リージェンツ・オブ・ザ・ユニバーシティー・オブ・カリフォルニアＴｈｅ Ｒｅｇｅｎｔｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｃａｌｉｆｏｒｎｉａ Graphene-based multimodal sensor
EP3444375A1 (en) * 2017-08-14 2019-02-20 INL - International Iberian Nanotechnology Laboratory Method for formation of a graphene layer
CN109837587B (en) * 2018-05-22 2020-09-08 北京大学 Method for rapidly preparing large-size single crystal two-dimensional material under assistance of elements
CN109824038B (en) * 2019-02-20 2022-03-25 南京大学 Method for efficiently eliminating graphene wrinkles by chemical vapor deposition
CN110371955B (en) * 2019-07-22 2021-10-29 长飞光纤光缆股份有限公司 Preparation method of graphene-metal composite material
CN112299399B (en) * 2019-07-26 2022-08-02 北京石墨烯研究院 Multilayer graphene and growth method thereof
CN110684652A (en) * 2019-10-30 2020-01-14 德州学院 Graphene nucleic acid biosensor, and preparation method and application thereof
CN112240896A (en) * 2020-03-30 2021-01-19 天津理工大学 Composite carbon electrode and preparation method and application thereof
CN111847432B (en) * 2020-07-24 2023-08-29 北京石墨烯研究院 Large-area multilayer graphene and preparation method thereof
CN114074937B (en) * 2020-08-19 2023-09-05 山东海科创新研究院有限公司 Thin-layer low-defect micro-nano graphene and preparation method thereof
CN112266182A (en) * 2020-11-05 2021-01-26 北京石墨烯研究院 Graphene glass and preparation method thereof
CN112575310B (en) * 2020-11-27 2023-07-25 重庆大学 Method for preparing graphene film by low-temperature chemical vapor deposition
JP2023511653A (en) * 2020-12-30 2023-03-22 ヂェァジァン ユニバーシティ Enhanced graphene structures, graphene films and optoelectronic devices based on weak bonds
TW202321506A (en) * 2021-09-30 2023-06-01 美商蘭姆研究公司 Deposition and treatment of nano-graphene at low temperatures
CN114890410B (en) * 2022-06-30 2023-12-29 常州二维碳素科技股份有限公司 Preparation method of high-yield high-quality graphene powder

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110014368A1 (en) * 2009-07-14 2011-01-20 Cfd Research Corporation Carbon nanotube growth at reduced temperature via catalytic oxidation
CN102220566A (en) * 2011-06-09 2011-10-19 无锡第六元素高科技发展有限公司 Method for preparing single-layer or multi-layer graphene through chemical vapor deposition
GB201109962D0 (en) * 2011-06-14 2011-07-27 Univ Durham Process for producing graphene
CN102351175A (en) * 2011-11-03 2012-02-15 东南大学 High-quality transfer method of graphene prepared by chemical vapor deposition method

Also Published As

Publication number Publication date
US20150136737A1 (en) 2015-05-21
EP2850032B1 (en) 2022-05-04
EP2850032A1 (en) 2015-03-25
CN104334495A (en) 2015-02-04
SG10202105024SA (en) 2021-06-29
SG11201407540TA (en) 2014-12-30
EP2850032A4 (en) 2015-07-08
WO2013172792A1 (en) 2013-11-21

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