SG10201605746RA - Data storage with data randomizer in multiple operating modes - Google Patents

Data storage with data randomizer in multiple operating modes

Info

Publication number
SG10201605746RA
SG10201605746RA SG10201605746RA SG10201605746RA SG10201605746RA SG 10201605746R A SG10201605746R A SG 10201605746RA SG 10201605746R A SG10201605746R A SG 10201605746RA SG 10201605746R A SG10201605746R A SG 10201605746RA SG 10201605746R A SG10201605746R A SG 10201605746RA
Authority
SG
Singapore
Prior art keywords
data
operating modes
multiple operating
data storage
randomizer
Prior art date
Application number
SG10201605746RA
Inventor
A Thomson Preston
Zhang Peiling
Chen Junchao
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to SG10201605746RA priority Critical patent/SG10201605746RA/en
Priority to US15/490,316 priority patent/US10014051B2/en
Publication of SG10201605746RA publication Critical patent/SG10201605746RA/en
Priority to US15/993,968 priority patent/US10283195B2/en
Priority to US16/361,313 priority patent/US10636482B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
SG10201605746RA 2016-07-13 2016-07-13 Data storage with data randomizer in multiple operating modes SG10201605746RA (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SG10201605746RA SG10201605746RA (en) 2016-07-13 2016-07-13 Data storage with data randomizer in multiple operating modes
US15/490,316 US10014051B2 (en) 2016-07-13 2017-04-18 Data storage with data randomizer in multiple operating modes
US15/993,968 US10283195B2 (en) 2016-07-13 2018-05-31 Methods of operating a memory with redistribution of received data
US16/361,313 US10636482B2 (en) 2016-07-13 2019-03-22 Methods of operating a memory with redistribution of received data

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201605746RA SG10201605746RA (en) 2016-07-13 2016-07-13 Data storage with data randomizer in multiple operating modes

Publications (1)

Publication Number Publication Date
SG10201605746RA true SG10201605746RA (en) 2018-02-27

Family

ID=60941207

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201605746RA SG10201605746RA (en) 2016-07-13 2016-07-13 Data storage with data randomizer in multiple operating modes

Country Status (2)

Country Link
US (3) US10014051B2 (en)
SG (1) SG10201605746RA (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201605746RA (en) * 2016-07-13 2018-02-27 Micron Technology Inc Data storage with data randomizer in multiple operating modes
KR20210111004A (en) 2020-03-02 2021-09-10 삼성전자주식회사 Non-volatile memory device, storage device having the same, and reading method thereof

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7986552B2 (en) * 2008-03-10 2011-07-26 Hynix Semiconductor Inc. Nonvolatile memory device and method of operation to program/read data by encoding/decoding using actual data and random data for program/read operation
US8059455B2 (en) * 2008-05-09 2011-11-15 Sandisk Il Ltd. Partial scrambling to reduce correlation
US8154918B2 (en) * 2008-06-30 2012-04-10 Sandisk Il Ltd. Method for page- and block based scrambling in non-volatile memory
US8230158B2 (en) 2008-08-12 2012-07-24 Micron Technology, Inc. Memory devices and methods of storing data on a memory device
KR20120095609A (en) * 2011-02-21 2012-08-29 삼성전자주식회사 Semiconductor memory system and program method thereof
KR101893143B1 (en) * 2011-03-16 2018-08-31 삼성전자주식회사 Nonvolatile memory device, programming method and reading method thereof, and memory system having the same
KR20130053247A (en) * 2011-11-15 2013-05-23 삼성전자주식회사 Programming method of programming data into nonvolatile memory device and memory system including nonvolatile memory device
KR102005888B1 (en) * 2012-07-06 2019-07-31 삼성전자주식회사 Nonvolatile memory device and read method thereof
US8730724B2 (en) * 2012-08-07 2014-05-20 Sandisk Technologies Inc. Common line current for program level determination in flash memory
KR101934892B1 (en) * 2012-10-17 2019-01-04 삼성전자 주식회사 Method for determining deterioration state of memory device and memory system using method thereof
US20140115234A1 (en) * 2012-10-24 2014-04-24 Samsung Electronics Co., Ltd. Memory system comprising nonvolatile memory device and related method of operation
US9098205B2 (en) * 2013-01-30 2015-08-04 Sandisk Technologies Inc. Data randomization in 3-D memory
KR102112115B1 (en) * 2013-04-17 2020-05-18 삼성전자주식회사 Semiconductor memory device and data programming method thereof
KR102195298B1 (en) * 2014-02-13 2020-12-24 삼성전자주식회사 Partial page program method for a nonvolatile memory device
KR102190694B1 (en) * 2014-03-14 2020-12-14 삼성전자주식회사 Nonvolatile memory system and operating method thereof
KR102397016B1 (en) * 2014-11-24 2022-05-13 삼성전자주식회사 Operatiing method of nonvolatile memory system
US20160188820A1 (en) * 2014-12-31 2016-06-30 Surescripts LLC Method, system, and apparatus for real time benefit check
KR102387956B1 (en) * 2015-09-09 2022-04-19 삼성전자주식회사 Memory system including nonvolatile memory device
SG10201605746RA (en) * 2016-07-13 2018-02-27 Micron Technology Inc Data storage with data randomizer in multiple operating modes

Also Published As

Publication number Publication date
US10636482B2 (en) 2020-04-28
US20190221258A1 (en) 2019-07-18
US20180277200A1 (en) 2018-09-27
US10014051B2 (en) 2018-07-03
US10283195B2 (en) 2019-05-07
US20180019014A1 (en) 2018-01-18

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