SG10201603964SA - Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure - Google Patents
Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structureInfo
- Publication number
- SG10201603964SA SG10201603964SA SG10201603964SA SG10201603964SA SG10201603964SA SG 10201603964S A SG10201603964S A SG 10201603964SA SG 10201603964S A SG10201603964S A SG 10201603964SA SG 10201603964S A SG10201603964S A SG 10201603964SA SG 10201603964S A SG10201603964S A SG 10201603964SA
- Authority
- SG
- Singapore
- Prior art keywords
- conductive
- plating
- semi
- cavity
- via structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1103529A FR2982877B1 (en) | 2011-11-18 | 2011-11-18 | MACHINE SUITABLE FOR METALLIZING A CAVITY OF A SEMICONDUCTOR OR CONDUCTIVE SUBSTRATE SUCH AS A VIA-TYPE VIA STRUCTURE |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201603964SA true SG10201603964SA (en) | 2016-07-28 |
Family
ID=47428566
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201603964SA SG10201603964SA (en) | 2011-11-18 | 2012-11-19 | Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure |
SG11201402393WA SG11201402393WA (en) | 2011-11-18 | 2012-11-19 | Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201402393WA SG11201402393WA (en) | 2011-11-18 | 2012-11-19 | Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure |
Country Status (10)
Country | Link |
---|---|
US (1) | US10460945B2 (en) |
EP (1) | EP2780931B1 (en) |
JP (1) | JP6134728B2 (en) |
KR (1) | KR102031817B1 (en) |
CA (1) | CA2856015C (en) |
FR (1) | FR2982877B1 (en) |
IL (1) | IL232679A0 (en) |
SG (2) | SG10201603964SA (en) |
TW (1) | TWI611543B (en) |
WO (1) | WO2013072525A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI658170B (en) * | 2015-02-17 | 2019-05-01 | 大陸商盛美半導體設備(上海)有限公司 | Device and method for uniform metallization on substrate |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE510776A (en) | 1951-04-20 | |||
SE7603626L (en) * | 1975-03-27 | 1977-01-04 | Otto Alfred Becker | DEVICE FOR GALVANIZING METAL SURFACES, SEPARATELY AT CUTTING EDGE WITH STACKING CUTTING PLATES |
US6017437A (en) * | 1997-08-22 | 2000-01-25 | Cutek Research, Inc. | Process chamber and method for depositing and/or removing material on a substrate |
US7114693B1 (en) * | 1999-04-08 | 2006-10-03 | Applied Materials, Inc. | Stable cell platform |
JP3367655B2 (en) * | 1999-12-24 | 2003-01-14 | 島田理化工業株式会社 | Plating apparatus and plating method |
US20040188257A1 (en) * | 2001-08-31 | 2004-09-30 | John Klocke | Methods for processing micro-feature workpieces, patterned structures on micro-feature workpieces, and integrated tools for processing micro-feature workpieces |
US6645832B2 (en) | 2002-02-20 | 2003-11-11 | Intel Corporation | Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stack |
JP2003264159A (en) * | 2002-03-11 | 2003-09-19 | Ebara Corp | Catalyst treatment method and catalyst treatment solution |
WO2003105200A1 (en) * | 2002-06-06 | 2003-12-18 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
US7060624B2 (en) | 2003-08-13 | 2006-06-13 | International Business Machines Corporation | Deep filled vias |
US7101792B2 (en) | 2003-10-09 | 2006-09-05 | Micron Technology, Inc. | Methods of plating via interconnects |
US20070111519A1 (en) * | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
JP2006128355A (en) * | 2004-10-28 | 2006-05-18 | Canon Inc | Silicon semiconductor substrate |
JP5281831B2 (en) * | 2008-06-30 | 2013-09-04 | 株式会社荏原製作所 | Method for forming conductive material structure |
FR2933425B1 (en) * | 2008-07-01 | 2010-09-10 | Alchimer | PROCESS FOR PREPARING AN ELECTRIC INSULATING FILM AND APPLICATION FOR METALLIZING VIAS THROUGH |
CN102387835A (en) * | 2009-03-06 | 2012-03-21 | 麦克内尔-Ppc股份有限公司 | Electrical stimulation device with additional sensory modalities |
FR2943688B1 (en) | 2009-03-27 | 2012-07-20 | Alchimer | DEVICE AND METHOD FOR REALIZING ELECTROCHEMICAL REACTION ON A SURFACE OF A SEMICONDUCTOR SUBSTRATE |
US8962085B2 (en) * | 2009-06-17 | 2015-02-24 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
FR2950062B1 (en) | 2009-09-11 | 2012-08-03 | Alchimer | SOLUTION AND METHOD FOR ACTIVATING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE |
FR2950633B1 (en) | 2009-09-30 | 2011-11-25 | Alchimer | SOLUTION AND METHOD FOR ACTIVATION OF THE OXIDIZED SURFACE OF A SEMICONDUCTOR SUBSTRATE |
JP5538951B2 (en) | 2010-02-25 | 2014-07-02 | 東京エレクトロン株式会社 | Film forming method, program, and computer storage medium |
-
2011
- 2011-11-18 FR FR1103529A patent/FR2982877B1/en active Active
-
2012
- 2012-11-16 TW TW101142829A patent/TWI611543B/en active
- 2012-11-19 US US14/358,659 patent/US10460945B2/en active Active
- 2012-11-19 WO PCT/EP2012/072993 patent/WO2013072525A2/en active Application Filing
- 2012-11-19 SG SG10201603964SA patent/SG10201603964SA/en unknown
- 2012-11-19 EP EP12805608.2A patent/EP2780931B1/en active Active
- 2012-11-19 SG SG11201402393WA patent/SG11201402393WA/en unknown
- 2012-11-19 KR KR1020147016771A patent/KR102031817B1/en active IP Right Grant
- 2012-11-19 JP JP2014541705A patent/JP6134728B2/en active Active
- 2012-11-19 CA CA2856015A patent/CA2856015C/en active Active
-
2014
- 2014-05-18 IL IL232679A patent/IL232679A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20140318975A1 (en) | 2014-10-30 |
FR2982877A1 (en) | 2013-05-24 |
WO2013072525A3 (en) | 2013-09-19 |
CA2856015A1 (en) | 2013-05-23 |
KR102031817B1 (en) | 2019-10-14 |
US10460945B2 (en) | 2019-10-29 |
WO2013072525A2 (en) | 2013-05-23 |
FR2982877B1 (en) | 2014-10-03 |
KR20140105766A (en) | 2014-09-02 |
TWI611543B (en) | 2018-01-11 |
EP2780931B1 (en) | 2016-08-24 |
JP6134728B2 (en) | 2017-05-24 |
CA2856015C (en) | 2020-10-27 |
SG11201402393WA (en) | 2014-09-26 |
IL232679A0 (en) | 2014-07-31 |
EP2780931A2 (en) | 2014-09-24 |
JP2014533887A (en) | 2014-12-15 |
TW201330210A (en) | 2013-07-16 |
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