SG10201508076YA - Thyristor random access memory device and method - Google Patents

Thyristor random access memory device and method

Info

Publication number
SG10201508076YA
SG10201508076YA SG10201508076YA SG10201508076YA SG10201508076YA SG 10201508076Y A SG10201508076Y A SG 10201508076YA SG 10201508076Y A SG10201508076Y A SG 10201508076YA SG 10201508076Y A SG10201508076Y A SG 10201508076YA SG 10201508076Y A SG10201508076Y A SG 10201508076YA
Authority
SG
Singapore
Prior art keywords
memory device
random access
access memory
thyristor random
thyristor
Prior art date
Application number
SG10201508076YA
Inventor
Sanh D Tang
John K Zahurak
Michael P Violette
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG10201508076YA publication Critical patent/SG10201508076YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thyristors (AREA)
  • Non-Volatile Memory (AREA)
SG10201508076YA 2010-06-29 2011-06-28 Thyristor random access memory device and method SG10201508076YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/826,323 US8535992B2 (en) 2010-06-29 2010-06-29 Thyristor random access memory device and method

Publications (1)

Publication Number Publication Date
SG10201508076YA true SG10201508076YA (en) 2015-10-29

Family

ID=45351701

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201508076YA SG10201508076YA (en) 2010-06-29 2011-06-28 Thyristor random access memory device and method
SG2012096194A SG186477A1 (en) 2010-06-29 2011-06-28 Thyristor random access memory device and method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012096194A SG186477A1 (en) 2010-06-29 2011-06-28 Thyristor random access memory device and method

Country Status (6)

Country Link
US (3) US8535992B2 (en)
KR (2) KR101793214B1 (en)
CN (2) CN103026489B (en)
SG (2) SG10201508076YA (en)
TW (1) TWI478288B (en)
WO (1) WO2012006094A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9461155B2 (en) 2010-06-29 2016-10-04 Micron Technology, Inc. Thyristor random access memory device and method

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* Cited by examiner, † Cited by third party
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US20140269046A1 (en) * 2013-03-15 2014-09-18 Micron Technology, Inc. Apparatuses and methods for use in selecting or isolating memory cells
KR20160097623A (en) * 2015-02-09 2016-08-18 삼성전자주식회사 Electronic device, contorl method thereof and system
JP6514050B2 (en) * 2015-06-09 2019-05-15 株式会社ブリヂストン Method of manufacturing mold for rubber article
US20190013317A1 (en) * 2017-07-10 2019-01-10 Tc Lab, Inc. High-Density Volatile Random Access Memory Cell Array and Methods of Fabrication
US11134946B2 (en) 2018-02-27 2021-10-05 Bolder Surgical, Llc Staple cartridge and methods for surgical staplers
US10504961B2 (en) 2018-03-16 2019-12-10 Micron Technology, Inc. Methods of forming integrated circuitry
US11653488B2 (en) * 2020-05-07 2023-05-16 Micron Technology, Inc. Apparatuses including transistors, and related methods, memory devices, and electronic systems

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JP3322936B2 (en) 1992-03-19 2002-09-09 株式会社東芝 Semiconductor storage device
US6103579A (en) * 1996-01-31 2000-08-15 Micron Technology, Inc. Method of isolating a SRAM cell
US6072209A (en) 1997-07-08 2000-06-06 Micro Technology, Inc. Four F2 folded bit line DRAM cell structure having buried bit and word lines
US6225165B1 (en) * 1998-05-13 2001-05-01 Micron Technology, Inc. High density SRAM cell with latched vertical transistors
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6137128A (en) 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
JP3743189B2 (en) * 1999-01-27 2006-02-08 富士通株式会社 Nonvolatile semiconductor memory device and manufacturing method thereof
US6552398B2 (en) 2001-01-16 2003-04-22 Ibm Corporation T-Ram array having a planar cell structure and method for fabricating the same
US7374974B1 (en) 2001-03-22 2008-05-20 T-Ram Semiconductor, Inc. Thyristor-based device with trench dielectric material
US6727528B1 (en) * 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
CN100407427C (en) * 2002-06-21 2008-07-30 微米技术股份有限公司 NROM memory cell, memory array, related devices and methods
US6838723B2 (en) * 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US6683330B1 (en) * 2002-10-01 2004-01-27 T-Ram, Inc. Recessed thyristor control port
TWI283912B (en) 2002-10-21 2007-07-11 Nanya Technology Corp A trench type stacked gate flash memory and the method to fabricate the same
US7259415B1 (en) * 2004-09-02 2007-08-21 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US7285812B2 (en) * 2004-09-02 2007-10-23 Micron Technology, Inc. Vertical transistors
US7867845B2 (en) * 2005-09-01 2011-01-11 Micron Technology, Inc. Transistor gate forming methods and transistor structures
US7655973B2 (en) * 2005-10-31 2010-02-02 Micron Technology, Inc. Recessed channel negative differential resistance-based memory cell
KR20080006674A (en) 2006-07-13 2008-01-17 정무길 Position-free and computerized turn-waiting method using pager-tag
US7719869B2 (en) 2007-11-19 2010-05-18 Qimonda Ag Memory cell array comprising floating body memory cells
US20090179262A1 (en) 2008-01-16 2009-07-16 Qimonda Ag Floating Body Memory Cell with a Non-Overlapping Gate Electrode
US7838928B2 (en) * 2008-06-06 2010-11-23 Qimonda Ag Word line to bit line spacing method and apparatus
US8535992B2 (en) 2010-06-29 2013-09-17 Micron Technology, Inc. Thyristor random access memory device and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9461155B2 (en) 2010-06-29 2016-10-04 Micron Technology, Inc. Thyristor random access memory device and method
US9954075B2 (en) 2010-06-29 2018-04-24 Micron Technology, Inc. Thyristor random access memory device and method

Also Published As

Publication number Publication date
TW201212165A (en) 2012-03-16
CN104362150B (en) 2017-09-15
CN104362150A (en) 2015-02-18
US20140015001A1 (en) 2014-01-16
US20110316042A1 (en) 2011-12-29
WO2012006094A2 (en) 2012-01-12
US9461155B2 (en) 2016-10-04
CN103026489B (en) 2014-11-05
KR101793214B1 (en) 2017-11-02
SG186477A1 (en) 2013-02-28
US8535992B2 (en) 2013-09-17
US9954075B2 (en) 2018-04-24
CN103026489A (en) 2013-04-03
TWI478288B (en) 2015-03-21
US20170025517A1 (en) 2017-01-26
KR101915627B1 (en) 2018-11-07
KR20170123719A (en) 2017-11-08
KR20130123363A (en) 2013-11-12
WO2012006094A3 (en) 2012-04-26

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