SG10201501551WA - Nanostructure and photovoltaic cell implementing same - Google Patents

Nanostructure and photovoltaic cell implementing same

Info

Publication number
SG10201501551WA
SG10201501551WA SG10201501551WA SG10201501551WA SG10201501551WA SG 10201501551W A SG10201501551W A SG 10201501551WA SG 10201501551W A SG10201501551W A SG 10201501551WA SG 10201501551W A SG10201501551W A SG 10201501551WA SG 10201501551W A SG10201501551W A SG 10201501551WA
Authority
SG
Singapore
Prior art keywords
nanostructure
photovoltaic cell
implementing same
cell implementing
same
Prior art date
Application number
SG10201501551WA
Inventor
Vincent Evelsizer
Larry Bawden
John Fisher
Original Assignee
Q1 Nanosystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Q1 Nanosystems Inc filed Critical Q1 Nanosystems Inc
Publication of SG10201501551WA publication Critical patent/SG10201501551WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
SG10201501551WA 2010-03-03 2011-03-03 Nanostructure and photovoltaic cell implementing same SG10201501551WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31022710P 2010-03-03 2010-03-03
US13/039,208 US9202954B2 (en) 2010-03-03 2011-03-02 Nanostructure and photovoltaic cell implementing same

Publications (1)

Publication Number Publication Date
SG10201501551WA true SG10201501551WA (en) 2015-04-29

Family

ID=44530252

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201501551WA SG10201501551WA (en) 2010-03-03 2011-03-03 Nanostructure and photovoltaic cell implementing same
SG2012051934A SG182519A1 (en) 2010-03-03 2011-03-03 Nanostructure and photovoltaic cell implementing same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012051934A SG182519A1 (en) 2010-03-03 2011-03-03 Nanostructure and photovoltaic cell implementing same

Country Status (6)

Country Link
US (1) US9202954B2 (en)
EP (2) EP2543078A4 (en)
JP (1) JP2013521662A (en)
KR (1) KR20130084218A (en)
SG (2) SG10201501551WA (en)
WO (1) WO2011109644A1 (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2256762A1 (en) * 2009-05-27 2010-12-01 Honeywell International Inc. Improved hole transfer polymer solar cell
US20110108102A1 (en) * 2009-11-06 2011-05-12 Honeywell International Inc. Solar cell with enhanced efficiency
US20120031490A1 (en) * 2010-08-03 2012-02-09 Honeywell International Inc. Quantum dot solar cells and methods for manufacturing such solar cells
KR101709959B1 (en) * 2010-11-17 2017-02-27 삼성전자주식회사 Bump structure, semiconductor package having the bump structure, and method of manufacturing the semiconductor package
US9147793B2 (en) 2011-06-20 2015-09-29 Alliance For Sustainable Energy, Llc CdTe devices and method of manufacturing same
TWI472048B (en) * 2011-07-07 2015-02-01 Univ Nat Chiao Tung Photo sensor and method of fabricating the same
US8852989B2 (en) * 2011-10-27 2014-10-07 Intermolecular, Inc. Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers
US20160172514A1 (en) * 2011-11-04 2016-06-16 Q1 Nanosystems Photovoltaic Microstructure and Photovoltaic Device Employing Nanowires with Single-Side Conductive Strips
JP2014049736A (en) * 2012-09-04 2014-03-17 Asahi Kasei Corp Solar cell and solar cell system
US9328427B2 (en) * 2012-09-28 2016-05-03 Sunpower Corporation Edgeless pulse plating and metal cleaning methods for solar cells
US9150434B2 (en) * 2012-11-09 2015-10-06 International Business Machines Corporation Electricity-less water disinfection
US9227855B2 (en) 2012-11-09 2016-01-05 International Business Machines Corporation Large-scale electricity-less disinfection of fluent water
CN103866360B (en) * 2012-12-10 2016-10-05 中物院成都科学技术发展中心 A kind of method that complicated wave form pulse ion liquid plates CIGS preformed layer altogether
US9082911B2 (en) 2013-01-28 2015-07-14 Q1 Nanosystems Corporation Three-dimensional metamaterial device with photovoltaic bristles
US9698285B2 (en) * 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US20140264998A1 (en) * 2013-03-14 2014-09-18 Q1 Nanosystems Corporation Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles
US9954126B2 (en) 2013-03-14 2018-04-24 Q1 Nanosystems Corporation Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
US20160071990A1 (en) * 2013-03-14 2016-03-10 Q1 Nanosystems Corporation Three-Dimensional Photovoltaic Devices Including Cavity-containing Cores and Methods of Manufacture
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
US20150101761A1 (en) * 2013-05-12 2015-04-16 Solexel, Inc. Solar photovoltaic blinds and curtains for residential and commercial buildings
KR101517123B1 (en) * 2013-05-27 2015-05-04 엘에스엠트론 주식회사 A compound thin film solar cell
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US10840400B2 (en) * 2013-08-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device with back reflector
FR3011381B1 (en) * 2013-09-30 2017-12-08 Aledia OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
KR102375889B1 (en) 2014-12-19 2022-03-16 삼성전자주식회사 Energy generating device, and method of manufacturing the same
US10665451B2 (en) * 2015-10-20 2020-05-26 King Abdullah University Of Science And Technology Nanowires-based light emitters on thermally and electrically conductive substrates and of making same
KR101904607B1 (en) * 2016-10-17 2018-10-04 울산과학기술원 3d-junction silicon solar cells and manufacturing method thereof
CN106898663A (en) * 2017-02-23 2017-06-27 京东方科技集团股份有限公司 The preparation method and electrical equipment of a kind of solar cell, solar cell
US11233332B2 (en) * 2017-05-02 2022-01-25 Electronics And Telecommunications Research Institute Light absorber
CN107009201B (en) * 2017-05-04 2023-07-25 玉环卡布里尔刀具科技有限公司 Precise cutter passivating machine for hard superhard material
CN110190022B (en) * 2019-05-23 2021-08-31 上海集成电路研发中心有限公司 Air gap forming method
CN110975890B (en) * 2019-12-24 2021-11-02 福州大学 Method for preparing Mo-doped CdS photocatalyst by cation replacement method

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3150999A (en) 1961-02-17 1964-09-29 Transitron Electronic Corp Radiant energy transducer
US3976508A (en) 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices
DE2639841C3 (en) 1976-09-03 1980-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Solar cell and process for its manufacture
US4234352A (en) 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
US4454372A (en) 1981-04-17 1984-06-12 Electric Power Research Institute, Inc. Photovoltaic battery
US4816082A (en) 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
JPH03151672A (en) 1989-11-08 1991-06-27 Sharp Corp Amorphous silicon solar cell
US5238519A (en) 1990-10-17 1993-08-24 United Solar Systems Corporation Solar cell lamination apparatus
JPH04296060A (en) 1991-03-26 1992-10-20 Hitachi Ltd Solar cell
US5178685A (en) 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JP3269668B2 (en) 1992-09-18 2002-03-25 株式会社日立製作所 Solar cell
JP2755281B2 (en) 1992-12-28 1998-05-20 富士電機株式会社 Thin film solar cell and method of manufacturing the same
US5371470A (en) 1993-03-04 1994-12-06 Photometrics, Ltd. Transverse filter circuit
DE69434745T2 (en) 1993-11-02 2006-10-05 Matsushita Electric Industrial Co., Ltd., Kadoma Method for producing an aggregate of micro-needles made of semiconductor material and method for producing a semiconductor component with such an aggregate
US5733381A (en) 1993-12-22 1998-03-31 Fuji Electric Co., Ltd. Thin-film solar cell array and method of manufacturing same
US5476553A (en) 1994-02-18 1995-12-19 Ase Americas, Inc. Solar cell modules and method of making same
JP3876021B2 (en) 1995-08-22 2007-01-31 松下電器産業株式会社 Silicon structure, manufacturing method and manufacturing apparatus thereof, and solar cell using silicon structure
US6518494B1 (en) 1995-08-22 2003-02-11 Matsushita Electric Industrial Co., Ltd. Silicon structure, method for producing the same, and solar battery using the silicon structure
US6147296A (en) 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
US5916375A (en) 1995-12-07 1999-06-29 Japan Energy Corporation Method of producing photoelectric conversion device
US5994164A (en) * 1997-03-18 1999-11-30 The Penn State Research Foundation Nanostructure tailoring of material properties using controlled crystallization
DE19813188A1 (en) 1998-03-25 1999-10-07 Siemens Solar Gmbh Method for one-sided doping of a semiconductor body
US6468828B1 (en) 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
DE19854269B4 (en) 1998-11-25 2004-07-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thin-film solar cell arrangement and method for producing the same
US6649824B1 (en) 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
US6340822B1 (en) 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6423568B1 (en) 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6372538B1 (en) 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
US6900382B2 (en) 2002-01-25 2005-05-31 Konarka Technologies, Inc. Gel electrolytes for dye sensitized solar cells
US6913713B2 (en) 2002-01-25 2005-07-05 Konarka Technologies, Inc. Photovoltaic fibers
US6620996B2 (en) 2000-05-29 2003-09-16 Kyocera Corporation Photoelectric conversion device
AU7684001A (en) 2000-07-06 2002-01-21 Bp Corp North America Inc Partially transparent photovoltaic modules
TWI292583B (en) 2000-08-22 2008-01-11 Harvard College Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices
US6548751B2 (en) 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
KR100401130B1 (en) 2001-03-28 2003-10-10 한국전자통신연구원 Ultra small size vertical MOSFET device and fabrication method of the MOSFET device
WO2002080280A1 (en) 2001-03-30 2002-10-10 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20030005957A1 (en) 2001-06-22 2003-01-09 Kunihide Tanaka Solar energy converter using optical concentration through a liquid
US6709929B2 (en) 2001-06-25 2004-03-23 North Carolina State University Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates
US20050217717A1 (en) 2002-01-02 2005-10-06 Sadeg Faris Photovoltaic cell and method of manufacture of photovoltaic cells
WO2003065394A2 (en) 2002-01-25 2003-08-07 Konarka Technologies, Inc. Photovoltaic cell components and materials
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20040018525A1 (en) 2002-05-21 2004-01-29 Bayer Aktiengesellschaft Methods and compositions for the prediction, diagnosis, prognosis, prevention and treatment of malignant neoplasma
US6660930B1 (en) 2002-06-12 2003-12-09 Rwe Schott Solar, Inc. Solar cell modules with improved backskin
US7253017B1 (en) 2002-06-22 2007-08-07 Nanosolar, Inc. Molding technique for fabrication of optoelectronic devices
US6946597B2 (en) 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
US6852920B2 (en) 2002-06-22 2005-02-08 Nanosolar, Inc. Nano-architected/assembled solar electricity cell
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US20050126628A1 (en) 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
AU2003298998A1 (en) 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
TW200425530A (en) * 2002-09-05 2004-11-16 Nanosys Inc Nanostructure and nanocomposite based compositions and photovoltaic devices
US7067867B2 (en) 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
US7135728B2 (en) 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US6872450B2 (en) 2002-10-23 2005-03-29 Evident Technologies Water-stable photoluminescent semiconductor nanocrystal complexes and method of making same
US20040123896A1 (en) 2002-12-31 2004-07-01 General Electric Company Selective heating and sintering of components of photovoltaic cells with microwaves
JP2004228333A (en) 2003-01-23 2004-08-12 Canon Inc Photovoltaic cell and its manufacturing method
US7605327B2 (en) 2003-05-21 2009-10-20 Nanosolar, Inc. Photovoltaic devices fabricated from nanostructured template
US7462774B2 (en) 2003-05-21 2008-12-09 Nanosolar, Inc. Photovoltaic devices fabricated from insulating nanostructured template
US6998288B1 (en) 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
US20050189015A1 (en) 2003-10-30 2005-09-01 Ajeet Rohatgi Silicon solar cells and methods of fabrication
KR100552707B1 (en) 2004-04-07 2006-02-20 삼성전자주식회사 Nanowire light emitting device and method of fabricating the same
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
KR101260981B1 (en) 2004-06-04 2013-05-10 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Methods and devices for fabricating and assembling printable semiconductor elements
US7692179B2 (en) 2004-07-09 2010-04-06 Hewlett-Packard Development Company, L.P. Nanowire device with (111) vertical sidewalls and method of fabrication
US20060024438A1 (en) 2004-07-27 2006-02-02 The Regents Of The University Of California, A California Corporation Radially layered nanocables and method of fabrication
US20070240757A1 (en) 2004-10-15 2007-10-18 The Trustees Of Boston College Solar cells using arrays of optical rectennas
CN100578817C (en) 2005-03-01 2010-01-06 佐治亚科技研究公司 Three-dimensional multi-junction photovoltaic device and method thereof
US20060207647A1 (en) 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US7686885B2 (en) * 2005-06-01 2010-03-30 General Electric Company Patterned nanorod arrays and methods of making same
EP1750310A3 (en) 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
US7871670B2 (en) 2005-08-10 2011-01-18 3M Innovative Properties Company Microfabrication using replicated patterned topography and self-assembled monolayers
JP2009507397A (en) 2005-08-22 2009-02-19 キュー・ワン・ナノシステムズ・インコーポレイテッド Nanostructure and photovoltaic cell implementing it
KR20080069958A (en) 2005-08-24 2008-07-29 더 트러스티스 오브 보스턴 칼리지 Apparatus and methods for solar energy conversion using nanoscale cometal structures
US7649665B2 (en) 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US7589880B2 (en) 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
US7754964B2 (en) 2005-08-24 2010-07-13 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
US7635600B2 (en) * 2005-11-16 2009-12-22 Sharp Laboratories Of America, Inc. Photovoltaic structure with a conductive nanowire array electrode
KR101533455B1 (en) 2006-04-06 2015-07-03 삼성전자주식회사 Nanowire composite and preparation method therof
JP2010517299A (en) * 2007-01-30 2010-05-20 ソーラスタ インコーポレイテッド Photocell and method for producing the same
US20080202581A1 (en) 2007-02-12 2008-08-28 Solasta, Inc. Photovoltaic cell with reduced hot-carrier cooling
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
TW200919751A (en) 2007-07-03 2009-05-01 Solasta Inc Distributed coax photovoltaic device
EP2201611A4 (en) 2007-09-25 2017-10-25 First Solar, Inc Photovoltaic devices including heterojunctions
CN101779290B (en) * 2007-09-25 2013-02-27 第一太阳能有限公司 Photovoltaic devices including an interfacial layer
US8759671B2 (en) 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US20100319759A1 (en) 2009-06-22 2010-12-23 John Fisher Nanostructure and methods of making the same

Also Published As

Publication number Publication date
EP2887404A1 (en) 2015-06-24
US9202954B2 (en) 2015-12-01
EP2543078A4 (en) 2014-08-13
EP2543078A1 (en) 2013-01-09
WO2011109644A1 (en) 2011-09-09
JP2013521662A (en) 2013-06-10
SG182519A1 (en) 2012-08-30
US20110214709A1 (en) 2011-09-08
KR20130084218A (en) 2013-07-24

Similar Documents

Publication Publication Date Title
SG10201501551WA (en) Nanostructure and photovoltaic cell implementing same
GB2496558B (en) Solar cell and battery 3D integration
EP2669953A4 (en) Solar cell and solar cell module
EP2637217A4 (en) Solar battery encapsulant and solar battery module
EP2600878A4 (en) Regulatory b cells and their uses
EP2669954A4 (en) Solar cell and solar cell module
EP2555314A4 (en) Photoelectrochemical cell and energy system using same
EP2626910A4 (en) Photovoltaic cell
GB2495166B (en) Single-junction photovoltaic cell
EP2555304A4 (en) Battery cell
EP2579319A4 (en) Solar cell module and solar cell
SG11201503391QA (en) Solar cell and solar cell module
EP2731147A4 (en) Solar cell module and solar cell
EP2660872A4 (en) Solar cell and solar cell module
GB201001156D0 (en) Photovoltaic cell
EP2506312A4 (en) Solar cell
EP2905823A4 (en) Coated cell and module battery
EP2533353A4 (en) Solar cell and solar cell module
EP2530730A4 (en) Solar cell and solar cell module using said solar cell
EP2583309A4 (en) Electrode and dye-sensitized solar cell
EP2680318A4 (en) Solar cell sealing film and solar cell utilizing same
EP2932536A4 (en) Compositiions and methods for improved solar cells
EP2824128A4 (en) Copolymer and organic solar cell using same
GB2498160B (en) Cell engagement and retention carriage
GB201017820D0 (en) Cells and devices