SG10201408357WA - Photomask blank and method for manufacturing photomask - Google Patents

Photomask blank and method for manufacturing photomask

Info

Publication number
SG10201408357WA
SG10201408357WA SG10201408357WA SG10201408357WA SG10201408357WA SG 10201408357W A SG10201408357W A SG 10201408357WA SG 10201408357W A SG10201408357W A SG 10201408357WA SG 10201408357W A SG10201408357W A SG 10201408357WA SG 10201408357W A SG10201408357W A SG 10201408357WA
Authority
SG
Singapore
Prior art keywords
photomask
manufacturing
blank
photomask blank
manufacturing photomask
Prior art date
Application number
SG10201408357WA
Inventor
Kojima Yosuke
Yoshikawa Hiroki
Inazuki Yukio
Koitabashi Ryuji
Original Assignee
Toppan Printing Co Ltd
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd, Shinetsu Chemical Co filed Critical Toppan Printing Co Ltd
Publication of SG10201408357WA publication Critical patent/SG10201408357WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
SG10201408357WA 2009-12-14 2010-12-03 Photomask blank and method for manufacturing photomask SG10201408357WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009283198A JP2011123426A (en) 2009-12-14 2009-12-14 Photomask blank and method for manufacturing photomask

Publications (1)

Publication Number Publication Date
SG10201408357WA true SG10201408357WA (en) 2015-02-27

Family

ID=44167186

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201408357WA SG10201408357WA (en) 2009-12-14 2010-12-03 Photomask blank and method for manufacturing photomask
SG2012045332A SG181817A1 (en) 2009-12-14 2010-12-03 Photomask blank and method for manufacturing photomask

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012045332A SG181817A1 (en) 2009-12-14 2010-12-03 Photomask blank and method for manufacturing photomask

Country Status (8)

Country Link
US (1) US9091931B2 (en)
EP (1) EP2515169B1 (en)
JP (1) JP2011123426A (en)
KR (1) KR101726466B1 (en)
CN (1) CN102656516B (en)
SG (2) SG10201408357WA (en)
TW (1) TWI526775B (en)
WO (1) WO2011074430A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5464186B2 (en) * 2011-09-07 2014-04-09 信越化学工業株式会社 Photomask blank, photomask and manufacturing method thereof
CN110083008A (en) * 2011-10-21 2019-08-02 大日本印刷株式会社 The manufacturing method of large-scale phase shifting mask and large-scale phase shifting mask
JP6019731B2 (en) * 2012-05-14 2016-11-02 凸版印刷株式会社 Method for manufacturing phase shift mask
JP6236918B2 (en) * 2012-06-26 2017-11-29 大日本印刷株式会社 Method for producing template for nanoimprint
US9081312B2 (en) 2013-05-14 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method to define multiple layer patterns with a single exposure by E-beam lithography
US9535316B2 (en) 2013-05-14 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask with three states for forming multiple layer patterns with a single exposure
JP6347365B2 (en) 2014-08-13 2018-06-27 Hoya株式会社 Mask blank with resist film, method for producing the same, and method for producing a transfer mask
JP6384910B2 (en) 2014-08-13 2018-09-05 Hoya株式会社 Mask blank with resist film, method for producing the same, and method for producing a transfer mask
JP6643142B2 (en) * 2016-02-26 2020-02-12 Hoya株式会社 Mask blank, mask blank with resist film, mask blank with resist pattern, method for producing them, and method for producing transfer mask

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2648805B2 (en) 1990-04-24 1997-09-03 インターナショナル・ビジネス・マシーンズ・コーポレイション Aqueous-processable photoresist composition for liquid application
JP4020242B2 (en) * 2001-09-28 2007-12-12 Ｈｏｙａ株式会社 Mask blank and mask
KR100815671B1 (en) * 2002-04-11 2008-03-20 호야 가부시키가이샤 Reflection type mask blank and reflection type mask and production methods for them
JP2006078825A (en) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd Photomask blank, photomask and method for manufacturing same
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP4405443B2 (en) * 2004-10-22 2010-01-27 信越化学工業株式会社 Photomask blank, photomask, and manufacturing method thereof
JP2007114451A (en) * 2005-10-20 2007-05-10 Hoya Corp Mask blank and method for manufacturing transfer mask
JP2007171520A (en) * 2005-12-21 2007-07-05 Hoya Corp Mask blank and mask
JP5014822B2 (en) * 2006-02-13 2012-08-29 Ｈｏｙａ株式会社 Resist underlayer film forming composition for mask blank, mask blank and mask
US7736822B2 (en) 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
JP5294227B2 (en) * 2006-09-15 2013-09-18 Ｈｏｙａ株式会社 Mask blank and transfer mask manufacturing method
JP5201813B2 (en) * 2006-09-15 2013-06-05 Ｈｏｙａ株式会社 Mask blank and mask manufacturing method
US20100273098A1 (en) * 2007-12-27 2010-10-28 Ulvac Coating Corporaation Mask blank, production method of mask blank and production method of mask
JP5323526B2 (en) * 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 Phase shift mask blank and method of manufacturing phase shift mask
JP2008268980A (en) 2008-07-29 2008-11-06 Shin Etsu Chem Co Ltd Method for manufacturing photomask

Also Published As

Publication number Publication date
EP2515169B1 (en) 2020-09-02
KR101726466B1 (en) 2017-04-12
WO2011074430A1 (en) 2011-06-23
EP2515169A1 (en) 2012-10-24
KR20120098781A (en) 2012-09-05
TWI526775B (en) 2016-03-21
JP2011123426A (en) 2011-06-23
US20120251930A1 (en) 2012-10-04
CN102656516B (en) 2015-09-30
SG181817A1 (en) 2012-07-30
TW201131286A (en) 2011-09-16
US9091931B2 (en) 2015-07-28
EP2515169A4 (en) 2014-07-30
CN102656516A (en) 2012-09-05

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