SG10201407562XA - Plasma processing devices with corrosion resistant components - Google Patents

Plasma processing devices with corrosion resistant components

Info

Publication number
SG10201407562XA
SG10201407562XA SG10201407562XA SG10201407562XA SG10201407562XA SG 10201407562X A SG10201407562X A SG 10201407562XA SG 10201407562X A SG10201407562X A SG 10201407562XA SG 10201407562X A SG10201407562X A SG 10201407562XA SG 10201407562X A SG10201407562X A SG 10201407562XA
Authority
SG
Singapore
Prior art keywords
plasma processing
corrosion resistant
plasma
resistant component
processing devices
Prior art date
Application number
SG10201407562XA
Inventor
Hong Shih
Lin Xu
Rajinder Dhindsa
John Daugherty
Yan Fang
Siwen Li
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201407562XA publication Critical patent/SG10201407562XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PLASMA PROCESSING DEVICES WITH CORROSION RESIST ANT COMPONENTS In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum CTa). FIG. 1 15
SG10201407562XA 2011-12-23 2012-12-18 Plasma processing devices with corrosion resistant components SG10201407562XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161579716P 2011-12-23 2011-12-23
US13/370,765 US20130160948A1 (en) 2011-12-23 2012-02-10 Plasma Processing Devices With Corrosion Resistant Components

Publications (1)

Publication Number Publication Date
SG10201407562XA true SG10201407562XA (en) 2014-12-30

Family

ID=48653397

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201407562XA SG10201407562XA (en) 2011-12-23 2012-12-18 Plasma processing devices with corrosion resistant components
SG2012093910A SG191539A1 (en) 2011-12-23 2012-12-18 Plasma processing devices with corrosion resistant components

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012093910A SG191539A1 (en) 2011-12-23 2012-12-18 Plasma processing devices with corrosion resistant components

Country Status (5)

Country Link
US (1) US20130160948A1 (en)
KR (1) KR20130073844A (en)
CN (1) CN103177926B (en)
SG (2) SG10201407562XA (en)
TW (1) TWI562833B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
JP6312405B2 (en) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 Plasma processing equipment
CN108022821B (en) * 2016-10-28 2020-07-03 中微半导体设备(上海)股份有限公司 Plasma processing device and corrosion-resistant protection method for gas channel
CN108735620B (en) * 2017-04-19 2021-01-08 北京北方华创微电子装备有限公司 Reaction chamber
CN114242553B (en) * 2021-12-15 2024-05-24 华虹半导体(无锡)有限公司 Treatment method of HDPCVD (high-density plasma chemical vapor deposition) process equipment

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767456A (en) * 1971-09-07 1973-10-23 Fansteel Inc Chemical vapor deposition of steel with tantalum and columbium
US5451444A (en) * 1993-01-29 1995-09-19 Deliso; Evelyn M. Carbon-coated inorganic substrates
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
WO2002033729A2 (en) * 2000-10-16 2002-04-25 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
US7077388B2 (en) * 2002-07-19 2006-07-18 Asm America, Inc. Bubbler for substrate processing
CN100418187C (en) * 2003-02-07 2008-09-10 东京毅力科创株式会社 Plasma processing device, annular element and plasma processing method
US20050263070A1 (en) * 2004-05-25 2005-12-01 Tokyo Electron Limited Pressure control and plasma confinement in a plasma processing chamber
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US20080029032A1 (en) * 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
US20100028572A1 (en) * 2006-10-06 2010-02-04 Asahi Tech Co., Ltd. Corrosion-resistant member and process for producing the same
US7723851B2 (en) * 2007-09-11 2010-05-25 International Business Machines Corporation Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias
JP2009100050A (en) * 2007-10-12 2009-05-07 Funai Electric Co Ltd Tv program recorder
EP2229471B1 (en) * 2008-01-08 2015-03-11 Treadstone Technologies, Inc. Highly electrically conductive surfaces for electrochemical applications
KR101625516B1 (en) * 2008-02-08 2016-05-30 램 리써치 코포레이션 Plasma processing apparatus and method of processing a semiconductor substrate in the same
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
WO2010091205A2 (en) * 2009-02-04 2010-08-12 Applied Materials, Inc. Ground return for plasma processes
US8709681B2 (en) * 2009-04-16 2014-04-29 Hoya Corporation Mask blank, transfer mask, and film denseness evaluation method
WO2011026129A2 (en) * 2009-08-31 2011-03-03 Lam Research Corporation Radio frequency (rf) ground return arrangements
US20130068320A1 (en) * 2011-06-17 2013-03-21 Son Nguyen Protective material for gas delivery in a processing system

Also Published As

Publication number Publication date
TW201338873A (en) 2013-10-01
CN103177926A (en) 2013-06-26
CN103177926B (en) 2016-12-07
SG191539A1 (en) 2013-07-31
KR20130073844A (en) 2013-07-03
US20130160948A1 (en) 2013-06-27
TWI562833B (en) 2016-12-21

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