SE9903695A0 - Laser with vertical cavity and long wavelength with an integrated pump laser with short wavelength - Google Patents
Laser with vertical cavity and long wavelength with an integrated pump laser with short wavelengthInfo
- Publication number
- SE9903695A0 SE9903695A0 SE9903695A SE9903695A SE9903695A0 SE 9903695 A0 SE9903695 A0 SE 9903695A0 SE 9903695 A SE9903695 A SE 9903695A SE 9903695 A SE9903695 A SE 9903695A SE 9903695 A0 SE9903695 A0 SE 9903695A0
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- wavelength
- mirror
- short
- vertical cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
- H01S5/426—Vertically stacked cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
SAMMANDRAG En laser med vertikal kavitet med ling vaglAngd med en integrerad pumplaser med kort viglangd. Lasem tillhandahaller en pumplaser med kort vaglangd med en laser med -fang vaglangd i overliggande relation. Stimulerade emissionen frAn lasem med kort vaglangd agerar for aktivering av lasem med ling viglangd. Optiskt transparent lirn fixerar och monterar lasem i vertikal gruppering. Grupperingsproblem uppstir inte med strukturen °eh inga %fluster av fria barare eller andra komplexiteter typiskt associerade med tidigare kanda arrangemang uppstar. (Fig 1.) SUMMARY A laser with a vertical cavity with a long wavelength with an integrated pump laser with a short wavelength. The laser provides a pump laser with a short wavelength with a laser with a capture wavelength in the overlying relationship. Stimulated emission from short-wavelength lasers acts to activate long-wavelength lasers. Optically transparent lirn fixes and mounts the laser in vertical grouping. Grouping problems do not arise with the structure ° eh no% flurries of free bars or other complexities typically associated with previous kanda arrangements arise. (Fig. 1)
Description
BrINNINGENS AMNING Laser med vertikal kavitet och lang vaglAngd med en integrerad pumplaser med kort vaglangd SOKANDE Namn och adress. BURNING BREASTFEEDING Laser with vertical cavity and long wavelength with an integrated pump laser with short wavelength SEARCHING Name and address.
Om ornbixt saknas ange &en Ert telefonnummer. If ornbixt is missing, enter your phone number.
FOr juddisk person anges organisationsnummer. Mitel Semiconductor AB Box 5',9991014 1167870 77.= 933695- 175 26JARFALLAfl*800.r. :9991014 1.167"72 11':199.03:695- t 4-3000 . i: Organisationsnummet 9991014 1167873 72 9911695- UPPF1NNARE Namn och adress .i: *1 000. For Jewish person, state organization number. Mitel Semiconductor AB Box 5 ', 9991014 1167870 77. = 933695- 175 26JARFALLAfl * 800.r. : 9991014 1.167 "72 11 ': 199.03: 695- t 4-3000. I: Organization number 9991014 1167873 72 9911695- INVENTOR Name and address .i: * 1 000.
Klaus streubel Box 5 175 26JARFALLA OMBUD Namn, adress och telefonnummer —1 Undertecknad sokande befullmaktigar harmed nedanstaende upptagna svenska ombud att tire- tradaiOr denna —Imig alit sompatentansdkning och i alit som Or det eventuellt beviljade patentet X I Sokande befullmaktigar netianstaende svenska ombud genom separat fullmakt. Klaus streubel Box 5 175 26JARFALLA OMBUD Attorney Name, address and telephone number —1 The undersigned applicant authorizes the following Swedish agents to tire- tradaiOr this —Imig alit sompatentansdkning and in alit som Or it possibly granted patent X I Sokande authorizes Swedish delegates through netiansta.
GOTEBORGS PATENTBYRA DAHLS AB, Sjoporten 4, 417 64GOTEBORG Ombudets ref nrP158535E/Ho/SC BEGARAN OM PRIORITET Datum, land och ansOkningsnummer 17 oktober 1998, storbritannien, 9822620.2 VD DEPOSITION AV MIKROORGANISM Depositionsmyndighet DepositionsdatumI DepositIonsnr VID AVDELAD ELLER UTBRUTEN ANSOKNING StamansolmingarI SeSard I6Pdaft BEGARAN OM ITSGRANSKNING I Nyhetsgranskning av internationellt slag BILAGOR Beskrivning, patentkrav och sammandrag i tva exemplar 1ritningar i2exemplar OverlatelsehandlingfOljer Fullmaktffiljer Sekvenslista pa diskett EPOs Prioritetsbevisfoljer Ans8kningsavgift 3.800 kr Ansokningsavgift med ITS-granskning Tillaggsavgift, 100 kr fOr varje Diariebevis: 20 krTOTALT: BETALAS VIA Postgiro ANSOKAN Goteborg, 12 oktober 1999 7 _ Y Ort, datum program Patent In AVGIFT _X. ,_x_ X 1_, Underskrift 7.000 krEva -Stina Roth / patentkrav uttiver tio, 1000 krGOTEBORGS PATENTBYRA DAHLS AB 4820: - X —I El BankgiroI XXI Checkn Kontant Laser med vertikal kavitet och lang vaglangd med en integrerad pumplaser med kort vaglangd Foreliggande uppfinning avser en laser med vertikal kavitet och ling vaglangd med en integrerad pumplaser med kort vaglangd och i synnerhet avser foreliggande uppfinning en laser utbildad av kombinationen av tva oberoende ytemitterande laserstrukturer med vertikala kaviteter (VCSEL), vilka tillsarnmans ger en elektriskt driven laser med vertikal kavitet vilken emitterar en lang vaglangd. GOTEBORGS PATENTBYRA DAHLS AB Sjoporten 4, 417 64GOTEBORG Officer ref nrP158535E / Ho / SC claiming priority date, country and ansOkningsnummer October 17, 1998, the United Kingdom, 9822620.2 CEO DEPOSIT OF MICROORGANISM Security Authority DepositionsdatumI deposition AT divisional application StamansolmingarI SeSard I6Pdaft request for ITSGRANSKNING I News review of international kind APPENDICES Description, patent claims and summary in two copies 1 drawings in 2 copies Transfer document files Power of attorney files Sequence list on diskette EPOs Priority certificate files Application fee SEK 3,800 Application fee with ITS review APPROVAL FEES: SEK 100 APPLICATIONS 1999 7 _ Y Location, Date Program Patent In TAX _X. . In particular, the present invention relates to a laser formed by the combination of two independent vertical cavity surface emitting laser structures (VCSELs), which together provide an electrically driven vertical cavity laser which emits a laser. lang vaglangd.
Det är tidigare karit att utvecklingen av lasrar med vertikala kaviteter och emitterande langa vaglangder (VCL) har komplicerats av avsaknaden av lampliga epitaxiella speglar, hliga optiska fOrluster inne i laserkaviteten och en lag och temperaturkanslig optisk forstarkning I aktiva lagerstrukturen. Ista1let fir att injicera en elektrisk strom kan laserfimktionen uppnas mycket lattare genom optisk excitering av aktiva materialet genom anvandning av en extern ljuskaila med en kortare vagland ("optisk pumpning"). Forluster av fria barare i en optiskt pumpad VCL- struktur reduceras starict, eftersom endast nominellt icke dopade halvledarmaterial anvands. Det àr dven rnoj ligt att anvanda dielektriska material exv ett par kontrastlager med hOgt index som h6gt reflektiva Braggspeglar. Pumpkallan är lattare att tillverka genom anvaridning av GaAsbaserad VCL som emitterar vid en vaglangd Mom intervallet 780-980 nanometer. Det är tidigare kant att goda resultat har uppvisats med en monolitisk VCL pa 1300 nm vilken har tillverkats tillsammans med en pump-VCL vid 850 run ovanpa faktiska strukturen av 1300 nm. Detta genererades av V. Jayaraman et at, Uniform Threshold Current, Continuous-Wave, Single Mode, 1300 nm Vertical Cavity Lasers From 0 to 70 r, Electron. Lett., Vol. 34, No. 14, 1998, p.1405. Tillverkningen av denna elektriska/optiska drivna VCL (e/o-VCL) kraver fOrhallandevis avancerad behandling sasom tva wafersarnmansattningssteg och tillverkningen av en pump-VCL -* av mesatyp med kontaker i samma plan. It is previously clear that the development of lasers with vertical cavities and emitting long wavelengths (VCL) has been complicated by the lack of luminescent epitaxial mirrors, bright optical losses inside the laser cavity and a low and temperature sensitive optical amplification in the active layer structure. Instead of injecting an electric current, the laser function can be achieved much more easily by optical excitation of the active material by using an external light cone with a shorter vagland ("optical pumping"). Losses of free carriers in an optically pumped VCL structure are sharply reduced, since only nominally non-doped semiconductor materials are used. It is also possible to use dielectric materials such as a pair of high index contrast layers as highly reflective Bragg mirrors. The pump call is easier to manufacture by using GaAs-based VCL which emits at a wavelength Mom range 780-980 nanometers. It is previously edge that good results have been shown with a monolithic VCL of 1300 nm which has been manufactured together with a pump VCL at 850 run on top of the actual structure of 1300 nm. This was generated by V. Jayaraman et al, Uniform Threshold Current, Continuous-Wave, Single Mode, 1300 nm Vertical Cavity Lasers From 0 to 70 years, Electron. Lett., Vol. 34, no. 14, 1998, p.1405. The manufacture of this electric / optical driven VCL (e / o-VCL) requires relatively advanced processing such as two wafer assembly steps and the manufacture of a mesa-type pump VCL with contacts in the same plane.
Det skulle vara efterstravansvart att uppna resultaten i tidgare kand teknik genom anvandning av tvâ separata VCL-strukturer vilka inte uppvisar nagra grupperingsproblem och tillhandahaller andra fOrdelar i termer av kostnad, mm. Foreliggande uppfinning uppnar dessa mai. It would be desirable to achieve the results in prior art by using two separate VCL structures which do not show any grouping problems and provide other advantages in terms of cost, etc. The present invention achieves these may.
Enligt en aspekt av foreliggande uppfinning tillhandahalles en laser med vertikal kavitet och lang vaglangd, innefattande: en toppemitterande laser med vertikal kavitet och kort vaglangd; och en ytemitterande laser med optiskt pumpad vertikal kavitet och rang vaglangd iiverliggande sagda laser med kort vaglangd och i optisk kommunikation med sagda laser med kort vaglangd. According to one aspect of the present invention there is provided a vertical cavity and long wavelength laser, comprising: a vertical cavity and short wavelength peak emitting laser; and a surface emitting laser with optically pumped vertical cavity and rank wavelength overlying said short wavelength laser and in optical communication with said short wavelength laser.
I enlighet med en andra aspekt av ett utfOringsexempel av fdreliggande uppfinning tillhandahalles en metod fir uthildning av en laser med vertikal kavitet och lang vaglangd, innefattande: en toppemitterande laser med vertikal kavitet och kort vaglangd; en ytemitterande laser med optiskt pumpad vertikal kavitet och lang vaglangd; placering av sagda laser med kart vaglangd i overliggande relation med sagda laser med kort vaglangd; ledning av elektrisk strom in i sagda laser med kort va.glangd for generering av ljusemission; ledning av emitterat bus genom en nedre pegel i sagda laser med tang vaglangd; och stimulering av en emission av fang vaglangd fan sagda laser med lang vaglangd genom en tivre spegel i sagda laser med lang vaglangd. According to a second aspect of an embodiment of the present invention, there is provided a method of curing a vertical cavity and long wavelength laser, comprising: a vertical cavity and short wavelength peak emitting laser; a surface emitting laser with optically pumped vertical cavity and long wavelength; placing said laser with short wavelength in overlying relationship with said laser with short wavelength; conduction of electric current into said laser with short wavelength for generating light emission; conduction of emitted bus through a lower level in said laser with forceps wavelength; and stimulation of an emission of fang vaglangd fan said laser with lang vaglangd through a tivre mirror in said laser with lang vaglangd.
I uppfinningen fOresliis en e/o-VCL som arbetar pa samma satt som anordningen enligt Jayararnan et al supra, men bestar av tva separata VCL-strukturer. Det generella konceptet gar ut pa att placera en optiskt pumpad VCL med tang vaglangd i overliggande relation med en VCL med kort vagla.ngd. Mekanisk kontakt mellan de tva VCL a.stadkommes genom anvandning av optiskt transparent lim. Limmet kan aven anvandas fir att reducera aterreflektionen av pumpljuset. Laterala dimensionerna for optiskt pumpat sample är mindre an dem for pump-VC fdr att ge tillgang till toppmetallelektroden. Laterela grupperingen mellan bada lasrama ar inte kritisk och kan majliggoras medelst automatiserad packningsutrustning. The invention provides an e / o VCL which operates in the same manner as the device according to Jayararnan et al supra, but consists of two separate VCL structures. The general concept is to place an optically pumped VCL with pliers wavelength in overlying relationship with a VCL with short wavelength. Mechanical contact between the two VCLs is accomplished by the use of optically transparent adhesive. The adhesive can also be used to reduce the back-reflection of the pump light. The lateral dimensions of the optically pumped sample are smaller than those of the pump VC to provide access to the top metal electrode. The lateral grouping between the two laser frames is not critical and can be made possible by means of automated packing equipment.
- Efter att salunda ha beskrivit uppfinning kommer nu hanvisning att gdras till hifogade ritning vilken illustrerar ett fdredraget utflringsexempel och I vilken: Figur 1 hr en schematisk illustration av laserstrukturen enligt ett utfiringsexempel av :foreliggande uppfinning. Having thus described the invention, reference will now be made to the accompanying drawing which illustrates a preferred embodiment and in which: Figure 1 is a schematic illustration of the laser structure according to an embodiment of the present invention.
- Nu med hanvisning till ritningen, illustrerar figur 1 schematiskt ett utftiringsexempel av foreliggande uppfinning, generellt betecicnat med siffran 10. Som visas, innefattar en optiskt pumpad VCSEL tiled lang vaglangd 12 en optiskt pumpad laser med kort vaglangd med ett lager 14 av ett substrat 16 av InP eller GaAs. Alla element i en sadan VCSEL är viii kanda i tidigare kand teknik. I visade utforingsexemplet innefattar VCSEL med lang vaglangd 12 en appning 18 vilken dr i optisk kommunikation med en VCSEL med kort vaglangd, den senare generellt betecknad med siffran 20. Lasem 20 innefattar GaAs-substrat 22 och typiska aktiva lagren 24. Lasem 20 innefattar vidare en Oppning 26 fOr passage av ljusemission darigenom och i kommunikation med lasern 12 placerad i overliggande relation. Lasem 20 är monterad till sockeln 28 vilken ftmgerar som en metallkontakt 30 tillsammans med metallkontakten 32 pa lasem 20. En kalla for elektrisk strom 34 tillfors till lasem med kart vaglangd 20 for aft inducera emission. Referring now to the drawing, Figure 1 schematically illustrates an exemplary embodiment of the present invention, generally designated by the numeral 10. As shown, an optically pumped VCSEL tiled long wavelength 12 includes an optically pumped short wavelength laser having a layer 14 of a substrate 16. of InP or GaAs. All elements of such a VCSEL are known in the prior art. In the exemplary embodiment shown, the long wavelength VCSEL 12 includes an aperture 18 which is in optical communication with a short wavelength VCSEL, the latter generally designated by the numeral 20. The laser 20 includes GaAs substrate 22 and typical active layers 24. The laser 20 further includes a Aperture 26 for the passage of light emission therethrough and in communication with the laser 12 placed in the overlying relationship. The laser 20 is mounted to the base 28 which acts as a metal contact 30 together with the metal contact 32 on the laser 20. A cold electric current 34 is supplied to the laser with a short wavelength 20 to induce emission.
I drift injiceras en elektrisk strom Over pump-VCL 20. Detta genererar en stimulerad emission (exv vid 850 run) Over lasertroskeln. Spegelreflektivitetema (ej visade) ar valda sá aft det mesta av laserljuset leds uppat genom en oppning i p-elektroden 32, transparenta limmet och nedre spegeln i VCL med ling vaglangd 12. Pumpljuset med kort vaglangd absorberas i aktivaregionen 14 i ovre VCL-strukturen 12 dar det genererar en stimulerad emission med lang vaglangd. Emissionen av Haig vagldngd tas bort via byre spegeln (ej visad) och transparenta substratet 16 av InP eller GaAs. Detta iir generellt betecknat genom pilen i figuren. In operation, an electric current is injected Over pump-VCL 20. This generates a stimulated emission (eg at 850 run) Over the laser threshold. The mirror reflectivities (not shown) are selected so that most of the laser light is guided upward through an aperture in the p-electrode 32, the transparent adhesive and the lower mirror in VCL with long wavelength 12. The pump light with short wavelength is absorbed in the activator region 14 in the upper VCL structure 12 where it generates a stimulated emission with a long wavelength. The emission of Haig waddle weight is removed via the byre mirror (not shown) and the transparent substrate 16 by InP or GaAs. This is generally indicated by the arrow in the figure.
Det faktum aft optiskt pumpade VCL-kaviteten inte miste vara elektriskt leclande, Or aft aven den kan inbegripa luftgapsstrukturer, dlir ofTerlager tas bort medelst selektiv etsning, vilket visas av Streubel et al, i 1.26,um Vertical Cavity Laser with Two InP/Air-Gap Reflectors, Electron. Lett., Vol. 32, 1996, s. 1369. Epitaxiella strukturen for en VCL med Lang vagl'angd, vilken inbegriper en eller tva luftgapsspeglar, kan Ian utbildas med epitaxiella teknologier av standardtyp. The fact that the optically pumped VCL cavity does not have to be electrically leaking, or that it may also include air gap structures, is often removed by selective etching, as shown by Streubel et al., In 1.26, Vertical Cavity Laser with Two InP / Air. Gap Reflectors, Electron. Lett., Vol. 32, 1996, p. 1369. The epitaxial structure of a Lang vagl'angd VCL, which includes one or two air gap mirrors, can be trained with standard epitaxial technologies.
•Strukturen for fOreliggande uppfinning kombinerar alla fordelar med en e/o-VCL med en billig standardteknologi fdr behandling och packning. Fundamentala fordelar med en e/o-VCL hr i) minskade R5rluster av fria barare i VCL med lang vaglangd tack \rare avsaknad av doping; och ii) strOminjiceling och resistiv uppvamming endast i pump-VCL med kort vaglarigd. The structure of the present invention combines all the advantages of an e / o VCL with an inexpensive standard technology for treatment and packaging. Fundamental benefits of an e / o VCL hr i) reduced loss of free carriers in VCL with a long wobbly lack of doping; and ii) current injection and resistive heating only in pump VCL with short wobble line.
Strukturen fbr e/o-VCL som visas har erbjuder foljande fOrdelar: i) flexibilitet avseende design vid valet av optiskt pumpade strukturen (se tabell 1); ii) pumpkallan och optiskt pumpade VCL kan tillverkas, testas och optimeras oberoende; iii) pump-VCL med kart vaglangd kan tas fram fran kommersiellt tilgängliga anordningar, all nodvandig teknologi Ar tillganglig; iv) emitterade vaglangden dr definerad endast av optiska pumpstrukturen. En pump-VCL av standardtyp kan tjana som ett grundlAggande byggblock for olika VCL med lang vaglangc1; och v) paketet for fdreliggande uppfinning ger en produkt till lag kostnad. The structure of the e / o VCL shown has the following advantages: i) flexibility in design when selecting the optically pumped structure (see Table 1); ii) the pump source and optically pumped VCL can be manufactured, tested and optimized independently; iii) pump VCL with short wavelength can be produced from commercially available devices, all necessary technology Is available; iv) emitted wavelength dr defined only by the optical pump structure. A standard type pump VCL can serve as a basic building block for different VCLs with long vaglangc1; and v) the package of the present invention provides a product at legal cost.
Foljande kombinationer av VCL dr mojliga: Pump-VCL: i) 850 nm toppemitterande VCL 980 nm topp- eller bottenemitterande VCL VCL med H-implanterad stromapertur VCL med stromapertur av aluminiumoxid VCL av mesatyp 20 Optiskt pumpad 1300 nm VCL: VCL med tvA luftgapsspeglar VCL med en luftgapsspegel och en dielektrisk spegel VCL med tva. wafersammansatta speglar av GaAs/AlGaAs VCL med en wafersammansatt spegel av GaAs/AlGaAs och en dielektrisk spegel VCL med tva dielektriska speglar VCL med tvA speglar av GaAstAlGaAs och gitteranpassade GaInAs- alctiva lager Optiskt pumpad 1550 nm VL: VCL med tvA luftgapsspeglar VCL med en luftgapsspegel och en dielektrisk spegel VCL med en luftgapsspegel och en epitaxiellt utbildad spegel (GaAs/A1GaAs eller GaInP/InP) VCL med en wafersammansatt GaAs/AlGaAs och en spegel av InP/GalnAsP VCL med tva wafersammansatta speglar av GaAs/AlGaAs vi) VCL med en wafersammansatt spegel av GaAs/AlGaAs och en dielektrisk spegel VCL med tva dielektriska speglar VCL med tva speglar av GaAs/AlGaAs och gitteranpassade GalnAs- alctiva lager Fastan utfdringsexempel av uppfmningen har beskrivits ovan, är den inte begransad därtill och det kommer att vara uppenbart fdr fackmannen att ett flertal modifieringar utgor del av foreliggande upptimung under fdrutsattning att de inte avlagsnar sig fran andemening, allmanna natur och omfang av ianspraksgjorda och beskrivna uppfinning. The following combinations of VCL are possible: Pump VCL: i) 850 nm top emitting VCL 980 nm top or bottom emitting VCL VCL with H-implanted stroma aperture VCL with stroma aperture of alumina VCL of mesa type 20 Optically pumped 1300 nm VCL with VCL: VCL with an air gap mirror and a dielectric mirror VCL with two. wafer composite mirrors of GaAs / AlGaAs VCL with a wafer composite mirror of GaAs / AlGaAs and a dielectric mirror VCL with two dielectric mirrors VCL with two mirrors of GaAstAlGaAs and lattice-adapted GaInAs-alctiva bearings Optical air VC and a dielectric mirror VCL with an air gap mirror and an epitaxially formed mirror (GaAs / A1GaAs or GaInP / InP) VCL with a wafer composite GaAs / AlGaAs and a mirror of InP / GalnAsP VCL with two wafer composite mirrors of GaAs / GaAs wafer composite mirror of GaAs / AlGaAs and a dielectric mirror VCL with two dielectric mirrors VCL with two mirrors of GaAs / AlGaAs and lattice-adapted GalnAs-alctive bearings Although exemplary embodiments of the invention have been described above, it is not limited thereto and will not be limited thereto. that a number of modifications form part of the present invention on the condition that they do not deviate from the spirit, general nature and scope of claimed and described invention.
Claims (3)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9822620A GB2342773A (en) | 1998-10-17 | 1998-10-17 | Long wavelength vertical cavity laser with integrated short wavelength pump laser |
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| Publication Number | Publication Date |
|---|---|
| SE9903695L SE9903695L (en) | 1900-01-01 |
| SE9903695D0 SE9903695D0 (en) | 1999-10-14 |
| SE9903695A0 true SE9903695A0 (en) | 2000-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| SE9903695A SE9903695A0 (en) | 1998-10-17 | 1999-10-14 | Laser with vertical cavity and long wavelength with an integrated pump laser with short wavelength |
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| Country | Link |
|---|---|
| CA (1) | CA2284319A1 (en) |
| DE (1) | DE19947853A1 (en) |
| FR (1) | FR2784811A1 (en) |
| GB (1) | GB2342773A (en) |
| SE (1) | SE9903695A0 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6434180B1 (en) * | 2000-12-19 | 2002-08-13 | Lucent Technologies Inc. | Vertical cavity surface emitting laser (VCSEL) |
| WO2003001636A1 (en) | 2001-06-20 | 2003-01-03 | Infineon Technologies Ag | Photon emitter and data transmission device |
| DE10134825A1 (en) * | 2001-06-20 | 2003-01-09 | Infineon Technologies Ag | Photon emitter and data transmission device |
| DE10243545B4 (en) | 2002-09-19 | 2008-05-21 | Osram Opto Semiconductors Gmbh | Optically pumped semiconductor laser device |
| DE102006024220A1 (en) | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
| DE102008048903B4 (en) | 2008-09-25 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic component |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5513204A (en) * | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
| DE19523267A1 (en) * | 1995-06-27 | 1997-01-02 | Bosch Gmbh Robert | Vertical cavity surface emitting laser module for transmitter in long wavelength region |
| US5754578A (en) * | 1996-06-24 | 1998-05-19 | W. L. Gore & Associates, Inc. | 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser |
| US5914976A (en) * | 1997-01-08 | 1999-06-22 | W. L. Gore & Associates, Inc. | VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links |
-
1998
- 1998-10-17 GB GB9822620A patent/GB2342773A/en not_active Withdrawn
-
1999
- 1999-09-28 CA CA002284319A patent/CA2284319A1/en not_active Abandoned
- 1999-10-05 DE DE19947853A patent/DE19947853A1/en not_active Withdrawn
- 1999-10-11 FR FR9912616A patent/FR2784811A1/en not_active Withdrawn
- 1999-10-14 SE SE9903695A patent/SE9903695A0/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2784811A1 (en) | 2000-04-21 |
| SE9903695D0 (en) | 1999-10-14 |
| GB2342773A (en) | 2000-04-19 |
| GB9822620D0 (en) | 1998-12-09 |
| SE9903695L (en) | 1900-01-01 |
| DE19947853A1 (en) | 2000-04-20 |
| CA2284319A1 (en) | 2000-04-17 |
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