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Application filed by Abb Research LtdfiledCriticalAbb Research Ltd
Priority to SE9602408ApriorityCriticalpatent/SE9602408L/en
Publication of SE9602408D0publicationCriticalpatent/SE9602408D0/en
Publication of SE9602408LpublicationCriticalpatent/SE9602408L/en
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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Engineering & Computer Science
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Chemical & Material Sciences
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Ceramic Engineering
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Physics & Mathematics
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Condensed Matter Physics & Semiconductors
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General Physics & Mathematics
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Computer Hardware Design
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Microelectronics & Electronic Packaging
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Power Engineering
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Formation Of Insulating Films
(AREA)
Abstract
Semiconductor device comprises: (a) at least one SiC semiconductor layer with an insulation layer on at least a portion of its surface; and (b) passivation layer comprising at least two superimposed sub-layers the first being insulating and the second semi-insulating allowing a weak current to flow in a blocking state of the device.
SE9602408A1996-06-191996-06-19
Semiconductor device comprising a passivation layer
SE9602408L
(en)