SE8207299D0 - CATENATED PHOSPHORUS MATERIALS, THEIR PREPARATION AND USE, AND SEMICONDUCTOR AND OTHER DEVICES EMPLOYING THEM - Google Patents

CATENATED PHOSPHORUS MATERIALS, THEIR PREPARATION AND USE, AND SEMICONDUCTOR AND OTHER DEVICES EMPLOYING THEM

Info

Publication number
SE8207299D0
SE8207299D0 SE8207299A SE8207299A SE8207299D0 SE 8207299 D0 SE8207299 D0 SE 8207299D0 SE 8207299 A SE8207299 A SE 8207299A SE 8207299 A SE8207299 A SE 8207299A SE 8207299 D0 SE8207299 D0 SE 8207299D0
Authority
SE
Sweden
Prior art keywords
phosphorus
employed
materials
coatings
forms
Prior art date
Application number
SE8207299A
Other languages
Swedish (sv)
Other versions
SE8207299L (en
Inventor
M A Kuck
C G Michel
R Schachter
J A Baumann
P M Raccah
Original Assignee
Stauffer Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/419,537 external-priority patent/US4620968A/en
Priority claimed from US06/442,208 external-priority patent/US4508931A/en
Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co
Publication of SE8207299D0 publication Critical patent/SE8207299D0/en
Publication of SE8207299L publication Critical patent/SE8207299L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/003—Phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/02—Preparation of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/04—Purification of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/081—Other phosphides of alkali metals, alkaline-earth metals or magnesium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K21/00—Fireproofing materials
    • C09K21/02—Inorganic materials
    • C09K21/04—Inorganic materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/283—Borides, phosphides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/29—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Luminescent Compositions (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Thin Magnetic Films (AREA)

Abstract

High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x = 7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP15 appears to have the best properties and KP15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Top contacts forming junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible. These semiconductors belong to the class of polymer forming, trivalent atomic species forming homatomic, covalent bonds having a coordination number slightly less than 3. The predominant local order appears to be all parallel pentagonal tubes in all forms, including amorphous, except for the monoclinic and twisted fiber allotropes of phosphorus. Large crystal monoclinic phosphorus (a birefringent material) in two habits, a twisted fiber phosphorus allotrope and a star shaped fibrous high phosphorus material are also disclosed. Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus. The materials may be employed as protective coatings, optical coatings, fire retardants, fillers and reinforcing fillers or plastics and glasses, antireflection coatings for infrared optics, infrared transmitting windows, and optical rotators. <IMAGE>
SE8207299A 1981-12-30 1982-12-21 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN SE8207299L (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33570681A 1981-12-30 1981-12-30
US06/419,537 US4620968A (en) 1981-12-30 1982-09-17 Monoclinic phosphorus formed from vapor in the presence of an alkali metal
US06/442,208 US4508931A (en) 1981-12-30 1982-11-16 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them

Publications (2)

Publication Number Publication Date
SE8207299D0 true SE8207299D0 (en) 1982-12-21
SE8207299L SE8207299L (en) 1983-07-01

Family

ID=27407080

Family Applications (4)

Application Number Title Priority Date Filing Date
SE8207299A SE8207299L (en) 1981-12-30 1982-12-21 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN
SE8401509A SE8401509D0 (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN
SE8401511A SE8401511D0 (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN
SE8401510A SE8401510D0 (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN

Family Applications After (3)

Application Number Title Priority Date Filing Date
SE8401509A SE8401509D0 (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN
SE8401511A SE8401511D0 (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN
SE8401510A SE8401510D0 (en) 1981-12-30 1984-03-19 PHOSFORM MATERIALS, MANUFACTURING AND USE THEREOF, AND SEMI-CONDUCTORS AND OTHER EQUIPMENT WHICH THEY CONTAIN

Country Status (23)

Country Link
JP (1) JPH0611644B2 (en)
KR (1) KR840003144A (en)
AU (1) AU553091B2 (en)
BR (1) BR8207569A (en)
CA (1) CA1215521A (en)
CH (3) CH663609A5 (en)
DE (1) DE3247869A1 (en)
DK (1) DK578782A (en)
ES (2) ES518662A0 (en)
FR (1) FR2530866B1 (en)
GB (2) GB2113663B (en)
GR (1) GR78374B (en)
HK (2) HK38188A (en)
IE (1) IE53683B1 (en)
IL (1) IL67565A0 (en)
IT (1) IT1210712B (en)
MA (1) MA19673A1 (en)
NL (1) NL8205055A (en)
NO (1) NO824406L (en)
PL (1) PL239879A1 (en)
PT (1) PT76047B (en)
SE (4) SE8207299L (en)
SG (1) SG97687G (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111170292A (en) * 2019-11-04 2020-05-19 湖北大学 Preparation method and application of fiber-phase red phosphorus nanoparticles

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
AU2992784A (en) * 1983-06-29 1985-01-03 Stauffer Chemical Company Passivation and insulation of iii-v devices with pnictides
AU2993784A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vacuum deposition of pnictides
DK318184A (en) * 1984-02-17 1985-08-18 Stauffer Chemical Co HIGH-VACUUM DISPOSAL PROCESSES USING A CONTINUOUS PNIC TIME DELIVERY SYSTEM
AU2993684A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vapour deposition of pnictides
GB9010000D0 (en) * 1990-05-03 1990-06-27 Stc Plc Phosphide films
JP4958076B2 (en) * 2008-01-25 2012-06-20 住友電気工業株式会社 Method for analyzing red phosphorus in resin composition
GB201601838D0 (en) 2016-02-02 2016-03-16 Univ Surrey A composition
KR102307523B1 (en) * 2019-10-30 2021-09-30 울산과학기술원 Manufacuring method for polyphosphide precursor, manufacuring method for crystalline red phosphorus thin film and electronic device application

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397038A (en) * 1964-11-30 1968-08-13 Hooker Chemical Corp Manufacture of a reactive trisodium phosphide
FR2419585A1 (en) * 1978-03-07 1979-10-05 Thomson Csf PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
GB2055774B (en) * 1979-04-09 1983-02-02 Plessey Co Ltd Methods of producing semiconductor materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111170292A (en) * 2019-11-04 2020-05-19 湖北大学 Preparation method and application of fiber-phase red phosphorus nanoparticles
CN111170292B (en) * 2019-11-04 2023-09-29 湖北大学 Preparation method and application of fiber phase red phosphorus nano particles

Also Published As

Publication number Publication date
IT8249774A0 (en) 1982-12-30
JPH0611644B2 (en) 1994-02-16
DE3247869A1 (en) 1983-08-18
PT76047A (en) 1983-01-01
ES8406000A1 (en) 1984-06-16
GB2113663B (en) 1986-10-29
ES530659A0 (en) 1985-10-01
ES518662A0 (en) 1984-06-16
JPH05201712A (en) 1993-08-10
CA1215521A (en) 1986-12-23
BR8207569A (en) 1983-10-25
NL8205055A (en) 1983-07-18
KR840003144A (en) 1984-08-13
IE823057L (en) 1983-06-30
DK578782A (en) 1983-07-01
FR2530866A1 (en) 1984-01-27
GB2172585B (en) 1987-01-28
CH672778A5 (en) 1989-12-29
CH663609A5 (en) 1987-12-31
ES8600164A1 (en) 1985-10-01
AU9158882A (en) 1983-07-07
CH666252A5 (en) 1988-07-15
IT1210712B (en) 1989-09-20
IL67565A0 (en) 1983-05-15
GR78374B (en) 1984-09-26
SE8401509L (en) 1984-03-19
GB8516583D0 (en) 1985-08-07
IE53683B1 (en) 1989-01-04
PT76047B (en) 1985-11-18
SE8401509D0 (en) 1984-03-19
GB2172585A (en) 1986-09-24
SE8401511L (en) 1984-03-19
SE8401510L (en) 1984-03-19
SE8401511D0 (en) 1984-03-19
SE8207299L (en) 1983-07-01
HK38288A (en) 1988-06-03
GB2113663A (en) 1983-08-10
HK38188A (en) 1988-06-03
AU553091B2 (en) 1986-07-03
SG97687G (en) 1988-06-03
NO824406L (en) 1983-07-01
FR2530866B1 (en) 1985-07-12
PL239879A1 (en) 1984-03-26
MA19673A1 (en) 1983-07-01
SE8401510D0 (en) 1984-03-19

Similar Documents

Publication Publication Date Title
SE8207299D0 (en) CATENATED PHOSPHORUS MATERIALS, THEIR PREPARATION AND USE, AND SEMICONDUCTOR AND OTHER DEVICES EMPLOYING THEM
Zhenhua Chemical bond approach to the chalcogenide glass forming tendency
Taylor et al. Structure of mineral glasses—III. NaAlSi3O8 supercooled liquid at 805 C and the effects of thermal history
Smyth The high temperature crystal chemistry of clinohypersthene
Takahashi et al. Structure and properties of CVD-BN thick film prepared on carbon steel substrate
Asokan et al. Crystallization studies on bulk SixTe100− x glasses
JPS62143841A (en) Chalcogenide glass
Hanmei et al. The effects of As and Te on the crystallization and optical gaps of selenium
Xia et al. Glass formation and crystallization behavior of a novel GeS2–Sb2S3–PbS chalcogenide glass system
MARK et al. Catenated phosphorus material
Saraswat et al. Band gap studies on Se-Te-Sn ternary glassy films
Kassem et al. New chalcogenide glasses in the CdTe–AgI–As2Te3 system
JPS6021822A (en) Manufacture of material with infrared optical transparency
Dempsey Evidence for structural changes in garnet caused by calcium substitution
Skordeva et al. Photoinduced changes of mechanical stress in amorphous Ge-As-S (Se) film/Si substrate systems.
JPS58135115A (en) Chain-shaped phosphorus material, its manufacture and use and semiconductor and other device using said material
Tichý et al. On the origin of photo-induced and thermally induced irreversible bleaching of amorphous Ge-Se films
Nagaki et al. Structure of gadolinium monosilicide
Kakimoto et al. Development of transparent single-crystalline KNbO3 thin film by LPE technique
Nandakumar et al. Energy gap studies on As-Sb-Se glasses
Parthasarathy et al. Crystallization studies on bulk Ga 20 Te 80 glass
Howson Optical properties of thin films of indium arsenide
Titus et al. Effect of selenium on the crystallization behaviour of As Te glasses
Sharma et al. Compositional dependence of physical properties in Se-Sb-In glassy system
Bondar et al. Thin Layers of the System Sb sub 2 Te sub 3--Sb sub 2 Se sub 3

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 8207299-2

Format of ref document f/p: F