SE7902375L - FIELD POWER TRANSISTOR - Google Patents

FIELD POWER TRANSISTOR

Info

Publication number
SE7902375L
SE7902375L SE7902375A SE7902375A SE7902375L SE 7902375 L SE7902375 L SE 7902375L SE 7902375 A SE7902375 A SE 7902375A SE 7902375 A SE7902375 A SE 7902375A SE 7902375 L SE7902375 L SE 7902375L
Authority
SE
Sweden
Prior art keywords
power transistor
field power
field
transistor
power
Prior art date
Application number
SE7902375A
Other languages
Unknown language ( )
Swedish (sv)
Inventor
C E Weitzel
D J Tanguay
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7902375L publication Critical patent/SE7902375L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE7902375A 1978-03-17 1979-03-16 FIELD POWER TRANSISTOR SE7902375L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88772478A 1978-03-17 1978-03-17

Publications (1)

Publication Number Publication Date
SE7902375L true SE7902375L (en) 1979-09-18

Family

ID=25391728

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7902375A SE7902375L (en) 1978-03-17 1979-03-16 FIELD POWER TRANSISTOR

Country Status (4)

Country Link
JP (1) JPS54151381A (en)
DE (1) DE2909320A1 (en)
IT (1) IT1111823B (en)
SE (1) SE7902375L (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
DE3069973D1 (en) * 1979-08-25 1985-02-28 Zaidan Hojin Handotai Kenkyu Insulated-gate field-effect transistor
JPS5780739A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
FR2518810A1 (en) * 1981-12-23 1983-06-24 Morin Francois METHOD FOR MANUFACTURING SILICON THIN FILM TRANSISTORS ON INSULATING SUBSTRATE
KR100252926B1 (en) * 1996-06-28 2000-04-15 구본준 Polysilicon thin-film transistor using silicide and manufacturing method thereof
FR3090098B1 (en) 2018-12-13 2021-11-26 Commissariat Energie Atomique A method of manufacturing a detection structure with an optimized absorption rate and said structure

Also Published As

Publication number Publication date
JPS54151381A (en) 1979-11-28
IT7920729A0 (en) 1979-03-02
DE2909320A1 (en) 1979-09-20
IT1111823B (en) 1986-01-13

Similar Documents

Publication Publication Date Title
NO791470L (en) POWER BENEFITS.
BR7906338A (en) HIGH POWER MOSFET DEVICE
DK101379A (en) THERMOELEMENT
PL212822A1 (en) SEMICONDUCTOR
LU90403I2 (en) Zofenil + zopranol
FI783115A (en) AOTERFOERSLUTBAR MULTIPELFOERPACKNING FOER I SYNNERHET VAOTSERVETTER
MX151790A (en) IMPROVED PHOTOVOLTAIC DEVICE
MX150760A (en) IMPROVED PHOTOVOLTAIC DEVICE
BR7902662A (en) POWER TRANSFORMER
IT7925734A0 (en) CONSTANT POWER DEVICE.
BR7906974A (en) TRANSISTOR
FI781935A (en) RENGOERINGSANORDNING FOER SKAVARBLADEN I EN PAPPERSMASKIN
DK525979A (en) Semiconductor LADNNGSOVERFOERINGSANORDNING
FI65844B (en) VIRVELLUFTSRENAR- OCH DIMELIMINATORENHET FOER EN GASTURBINMOTOR I MARINT BRUK
IT1111988B (en) POWER STEERING
SE7906716L (en) POWER REDUCING WISH
FI783516A (en) FOERBAETTRINGAR I KAPSYLERINGSANORDNINGAR
SE7902375L (en) FIELD POWER TRANSISTOR
GB2026236B (en) Power transistor
AT355527B (en) TURNING DEVICE
ATA202579A (en) BAGING DEVICE
FI780751A (en) STOPP- MOT- OCH OEPPNINGSVENTIL FOER ROERSYSTEM I SYNNERHET AVLOPPSSYSTEM
DE2951836A1 (en) SLIDER-LOCKING DEVICE
IT1129970B (en) POWER DEVICE
SE7909861L (en) POWER SUPPLY DEVICE

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 7902375-0

Format of ref document f/p: F