SE7808044L - Halvledarminne for lagring av elektrisk laddning - Google Patents

Halvledarminne for lagring av elektrisk laddning

Info

Publication number
SE7808044L
SE7808044L SE7808044A SE7808044A SE7808044L SE 7808044 L SE7808044 L SE 7808044L SE 7808044 A SE7808044 A SE 7808044A SE 7808044 A SE7808044 A SE 7808044A SE 7808044 L SE7808044 L SE 7808044L
Authority
SE
Sweden
Prior art keywords
charge
semicular
storage
electric
electric charge
Prior art date
Application number
SE7808044A
Other languages
English (en)
Inventor
M Kyomasu
Y Nakao
M Nakayama
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE7808044L publication Critical patent/SE7808044L/sv

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
SE7808044A 1977-07-22 1978-07-21 Halvledarminne for lagring av elektrisk laddning SE7808044L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8863177A JPS5423337A (en) 1977-07-22 1977-07-22 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
SE7808044L true SE7808044L (sv) 1979-01-23

Family

ID=13948146

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7808044A SE7808044L (sv) 1977-07-22 1978-07-21 Halvledarminne for lagring av elektrisk laddning

Country Status (5)

Country Link
US (1) US4366556A (sv)
JP (1) JPS5423337A (sv)
GB (1) GB2001816A (sv)
NL (1) NL7807820A (sv)
SE (1) SE7808044L (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766572A (en) * 1984-12-27 1988-08-23 Nec Corporation Semiconductor memory having a bypassable data output latch
US4975756A (en) * 1985-05-01 1990-12-04 Texas Instruments Incorporated SRAM with local interconnect
US4791612A (en) * 1985-12-18 1988-12-13 Fujitsu Limited Data programming circuit for programmable read only memory device
US5682110A (en) * 1992-03-23 1997-10-28 Texas Instruments Incorporated Low capacitance bus driver
EP0926686A1 (en) * 1997-12-23 1999-06-30 STMicroelectronics S.r.l. Non-volatile, serial-flash, EPROM, EEPROM and flash-EEPROM type memory in AMG configuration
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502480A (sv) * 1973-05-08 1975-01-11
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory
JPS51114037A (en) * 1975-04-01 1976-10-07 Nec Corp A peripheral circuit design for fixed insulation-gate semiconductor me mories
US4114055A (en) * 1977-05-12 1978-09-12 Rca Corporation Unbalanced sense circuit
US4122547A (en) * 1977-08-09 1978-10-24 Harris Corporation Complementary FET drivers for programmable memories

Also Published As

Publication number Publication date
NL7807820A (nl) 1979-01-24
US4366556A (en) 1982-12-28
GB2001816A (en) 1979-02-07
JPS5423337A (en) 1979-02-21

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