SE430437B - FIBEROPTICAL METHOD FOR SEATING ELECTRICAL AND MAGNETIC SIZES - Google Patents
FIBEROPTICAL METHOD FOR SEATING ELECTRICAL AND MAGNETIC SIZESInfo
- Publication number
- SE430437B SE430437B SE8201601A SE8201601A SE430437B SE 430437 B SE430437 B SE 430437B SE 8201601 A SE8201601 A SE 8201601A SE 8201601 A SE8201601 A SE 8201601A SE 430437 B SE430437 B SE 430437B
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- measuring device
- fiber optic
- layers
- sensor
- Prior art date
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- 239000002800 charge carrier Substances 0.000 claims description 17
- 239000000835 fiber Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000004020 luminiscence type Methods 0.000 claims description 13
- 238000005424 photoluminescence Methods 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000013307 optical fiber Substances 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 5
- 238000000295 emission spectrum Methods 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 230000032683 aging Effects 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
- 238000004886 process control Methods 0.000 claims 1
- 238000005215 recombination Methods 0.000 claims 1
- 230000006798 recombination Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- AGVAZMGAQJOSFJ-WZHZPDAFSA-M cobalt(2+);[(2r,3s,4r,5s)-5-(5,6-dimethylbenzimidazol-1-yl)-4-hydroxy-2-(hydroxymethyl)oxolan-3-yl] [(2r)-1-[3-[(1r,2r,3r,4z,7s,9z,12s,13s,14z,17s,18s,19r)-2,13,18-tris(2-amino-2-oxoethyl)-7,12,17-tris(3-amino-3-oxopropyl)-3,5,8,8,13,15,18,19-octamethyl-2 Chemical compound [Co+2].N#[C-].[N-]([C@@H]1[C@H](CC(N)=O)[C@@]2(C)CCC(=O)NC[C@@H](C)OP(O)(=O)O[C@H]3[C@H]([C@H](O[C@@H]3CO)N3C4=CC(C)=C(C)C=C4N=C3)O)\C2=C(C)/C([C@H](C\2(C)C)CCC(N)=O)=N/C/2=C\C([C@H]([C@@]/2(CC(N)=O)C)CCC(N)=O)=N\C\2=C(C)/C2=N[C@]1(C)[C@@](C)(CC(N)=O)[C@@H]2CCC(N)=O AGVAZMGAQJOSFJ-WZHZPDAFSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/268—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light using optical fibres
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
15 20 25 35 8201601-5 z liga givare för elektriska och magnetiska storheter. Givaren bygger pä elektriskt styrd fotoluminiscens och erhåller höga prestanda trots sin enkelhet genom att man i sensorn integrerar ett mät- och ett referens- element. Uppfinningen kännetecknas därav, att givaren (G) innehåller minst ett optiskt filter av absorptions- eller interferenstyp, att elektronik- och optoelektronikdelen (E) innehåller minst två ljuskällor med skilda emissions- spektra, att nämnda optiska filter är placerade i strålgången mellan den optiska fiberns ändyta i givaren och nämnda materialskikt på ett sådant sätt, att nämnda filter optiskt täcker väldefinierade ytor av nämnda skikt, att vart och ett av nämnda filter är anordnat att släppa igenom luminiscens- ljus från nämnda skikt och excitationsljus från minst en av nämnda ljuskäl- lor, men är samtidigt anordnat att blockera excitationsljus från minst en annan av nämnda ljuskällor, att de i nämnda materialskikt exciterade ladd- ningsbärarna är anordnade att rekombinera under utsändande av ljus, att minoritets1addningsbärarkoncentrationen i materialskiktet är anordnad att pâverkas av minst en pn- eller Schottky-övergång i närheten av material- skiktet samt att fotoströmmen genom och/eller spänningen över denna pn-över- gång är anordnad att moduleras av resistiva sensorelement och/eller spän- ningskällor och/eller aktiva halvledarkomponenter, såsom dioder, bipolära transistorer, tyristorer, tunneldioder och/eller fälteffekttransistorer. 15 20 25 35 8201601-5 z ligands for electrical and magnetic quantities. The sensor is based on electrically controlled photoluminescence and obtains high performance despite its simplicity by integrating a measuring and a reference element in the sensor. The invention is characterized in that the sensor (G) contains at least one optical filter of the absorption or interference type, that the electronics and optoelectronics part (E) contains at least two light sources with different emission spectra, that said optical filters are placed in the beam path between the optical fiber end surface of the sensor and said material layer in such a manner that said filter optically covers well-defined surfaces of said layer, that each of said filters is arranged to transmit luminescence light from said layer and excitation light from at least one of said light sources , but is at the same time arranged to block excitation light from at least one other of said light sources, that the charge carriers excited in said material layer are arranged to recombine during emission of light, that the minority charge carrier concentration in the material layer is arranged to be influenced by at least one pn- or Schottky. transition in the vicinity of the material layer and that the photo stream through o ch / or the voltage across this pn junction is arranged to be modulated by resistive sensor elements and / or voltage sources and / or active semiconductor components, such as diodes, bipolar transistors, thyristors, tunnel diodes and / or field effect transistors.
Man erhålleråsåledes en helt ny typ av sensorstruktur i exempelvis GaAlAs, som ger möjlighet till en totalintegrering i detta material av såväl opto- komponenter som sensorelektronik och som genom selektiv optisk avkänning av skilda GaAlAs-komponenter även ger möjlighet till optisk analog mätvärdes- överföring och våglängdsdemultiplexing.A completely new type of sensor structure is thus obtained in, for example, GaAlAs, which provides the possibility of a total integration in this material of both opto-components and sensor electronics and which through selective optical sensing of different GaAlAs components also provides the possibility of optical analog measurement transmission and wavelength demultiplexing .
Uppfinningen är närmare beskriven i bifogade figurer 1-B, där figur 1 visar ett komplett mätsystem, figur 2 en sensorutformning i epitaktiskt odlat halvledarmaterial, figur 3 spektrala samband för de aktuella mätsystemen, figur U elektrisk anslutning av sensorelementen till resistiva givare, figur 5 anslutning av sensorelementen till transistorkretsar, figur 6 an- slutning av sensorelementen till extern spänningskälla, figur 7 en sensor- utformning med en integrerad transistorfunktion och figur 8 ekvivalenta schemat för sensorn i figur 7.The invention is described in more detail in the attached Figures 1-B, where Figure 1 shows a complete measuring system, Figure 2 a sensor design in epitactically grown semiconductor material, Figure 3 spectral connections for the current measuring systems, Figure U electrical connection of the sensor elements to resistive sensors, Figure 5 connection of the sensor elements to transistor circuits, figure 6 connection of the sensor elements to external voltage source, figure 7 a sensor design with an integrated transistor function and figure 8 equivalent diagram for the sensor in figure 7.
I figur 1 kopplas med hjälp av switchen óa växelvis en ínjektionsström till de båda lys- eller laserdioderna 1 och 2. Ljuset från dessa dioder ledes via de optiska fibrerna 7 och 8, de optiska förgreningarna 9 och 10 20 25 30 z 8201601-5 och den optiska fibern 11 till givaren 60. För att erhålla ett konstant för- hållande mellan ljusintensiteterna från ljuskällorna 1 och 2 kopplas en del av ljuset från dessa till en fotodiod 3, vars fotoström med hjälp av diffe- rensbildaren Ä, referenssignalen Vref och integratorn 5 används för att reg- lera injektionsströmmarna till 1 och 2. Ljuskällorna 1 och 2 kommer att ge upphov till fotoluminiscens från olika delar av samma luminiscensskikt i givaren 60. En del av den så erhållna luminiscensen kopplas via fibern 11, förgreningen 10, fibern 61 och det optiska filtret 62 till fotodetektorn 63.In Figure 1, by means of the switch óa, an injection current is coupled alternately to the two light or laser diodes 1 and 2. The light from these diodes is conducted via the optical fibers 7 and 8, the optical branches 9 and 10 and 8 z 8201601-5 and the optical fiber 11 to the sensor 60. In order to obtain a constant ratio between the light intensities from the light sources 1 and 2, a part of the light from these is connected to a photodiode 3, the photocurrent of which by means of the difference generator Ä, the reference signal Vref and the integrator 5 is used to regulate the injection currents to 1 and 2. The light sources 1 and 2 will give rise to photoluminescence from different parts of the same luminescence layer in the sensor 60. A part of the luminescence thus obtained is connected via the fiber 11, the branch 10, the fiber 61 and the optical filter 62 to the photodetector 63.
Signalen från 63 förstärks av 6H och switchas av 6b, i takt med switchningen av ljuskällorna 1 och 2, till Sample- och Holdkretsarna 65 och 66. De samp- lade luminisoensvärdena påföres ett kvotbildande organ 67, vars utgång utgör själva mätsignalen, som i figuren är kopplad till ett indikerande instrument 68.The signal from 63 is amplified by 6H and switched by 6b, in step with the switching of the light sources 1 and 2, to the Sample and Hold circuits 65 and 66. The sampled luminance values are applied to a ratio-forming means 67, the output of which constitutes the measurement signal itself. is connected to an indicating instrument 68.
Ett exempel på utformningen av givaren 60 visas i figur 2, där figur 2a visar givaren från sidan och figur 2b från framsidan mot den optiska fibern 11.An example of the design of the sensor 60 is shown in Figure 2, where Figure 2a shows the sensor from the side and Figure 2b from the front towards the optical fiber 11.
Givaren framställes lämpligen genom epitaxi och om man därvid arbetar i ett GaXAl xAs-system kan de utritade skikten ha följande karakteristika: 1- 19, 20, 21: metallskikt för erhållande av ohmska kontakter 12: n-dopat GaAs-substrat 13: n-dopad Gax1Al1_x1As 1 : n-dopad Gax2Al1_x2As, xz > x1 }_§ n-dopad GaX3Al1_x3As, X3 > x1 p-dopad GaAs p-dopad Gax Al Ä X As, xh > 0 “'11 I figur 3a visas de spektrala sambanden i ett mätsystem enligt figur 1 med givarutformningen enligt figur 2 och i figur 3b de spektrala sambanden då skikt 13 ersatts av två interferensfilter 34 och 35 (se figur H). De olika kurvorna i figur 3a och 3b är: gg: lysdiodens 1 emissionsspektrum gå: lysdiodens 2 emissionsspektrum êššz gëgz gl: skiktets 16 absorptionsspektrum 28a: skiktets 16 fotoluminiscens vid temperaturen T1 skíktets 16 fotoluminiscens vid temperaturen T1 > T2 skiktets 13 absorptionsspektrum 10 15 20 25 30 35 8201601-s , ååh: skiktets 15 absorptionsspektrum 22: filtrets 62 transmissionsspektrum âg: interferensfiltrets 34 transmissionsspektrum (observera att 34 släpper igenom både 24 och 26) 31: interferensfiltrets 35_transmissionsspektrum I figur 3c och 3b betyder 6 vågländ, I intensitet, X absorption och T Transmission.The transducer is conveniently made by epitaxy, and if operated in a GaXAl xAs system, the plotted layers may have the following characteristics: 1- 19, 20, 21: metal layers to obtain ohmic contacts 12: n-doped GaAs substrate 13: n- doped Gax1Al1_x1As 1: n-doped Gax2Al1_x2As, xz> x1} _§ n-doped GaX3Al1_x3As, X3> x1 p-doped GaAs p-doped Gax Al Ä X As, xh> 0 “'11 Figure 3a shows the spectral relationships in a measuring system according to Figure 1 with the sensor design according to Figure 2 and in Figure 3b the spectral relationships when layer 13 has been replaced by two interference filters 34 and 35 (see Figure H). The different curves in Figures 3a and 3b are: gg: the emission spectrum of the LED 1 go: the emission spectrum of the LED 2 êššz gëgz gl: the absorption spectrum 28a of the layer 16: the photoluminescence of the layer 16 at the temperature T1 8201601-s, yyyy: the absorption spectrum 22 of the layer 15: the transmission spectrum of the filter 62 and: the transmission spectrum of the interference filter 34 (note that 34 transmits both 24 and 26) 31: the transmission spectrum of the interference filter 35 In Figures 3c and 3b, 6 means and T Transmission.
I figur 4 visas ett ekvivalent schema för en givare med två interferensfilter 34 och 35 (i stället för ett absorptionsfilter 13 som i figur 2a). De ekvi- valenta dioderna med anslutningarna 20, 21 och 22, vilka också är markerade i figur 2a, är anslutna till två motståndselement 36 och 37, där 36 pâverkas av en mätstorhet X, t ex magnetfält i fallet ett magnetoresistivt element, och där 37 används som referenselement för i första hand temperaturkompense- ring. Pilen T avser temperaturreferenssignal och X som nämnts mätsignal (fig 4).Figure 4 shows an equivalent diagram for a sensor with two interference filters 34 and 35 (instead of an absorption filter 13 as in Figure 2a). The equivalent diodes with the connections 20, 21 and 22, which are also marked in figure 2a, are connected to two resistance elements 36 and 37, where 36 is affected by a measuring variable X, eg magnetic field in the case of a magnetoresistive element, and where 37 is used as a reference element for primarily temperature compensation. Arrow T refers to temperature reference signal and X as mentioned measuring signal (Fig. 4).
Funktionen hos mätsystemet kan nu förklaras med hjälp av figur 1, 2, 3b och 4: Då lysdioden 1 är inkopplad kommer den övre dioden 32 enligt figur H att be- lysas medan dioden 33 kommer att ligga i mörker. Detta ger en fotoström genom motståndet 36 och ett spänningsfall över detta motstånd, som beror av resis- tansen och därmed mätvärdet X. Denna spännings storlek kommer att bestämma arbetspunkten hos diodens 32 I-V-karakteristik och ferminivåsprångets stor- lek i pn-övergången mellan skikten 15 och 16. Samtidigt som en fotoström bildas genom att optiskt exciterade minoritetsladdningsbärare i skikt 16 sugs över till skikt 15 på grund av den elektriska fältgradienten i pn-övergången mellan dessa skikt, så erhålles fotoluminiscens i skikt 16 genom att en del av de optiskt exciterade minoritetsladdningsbärarna rekombinerar med hål i skiktet under utsändande av ljus. Denna luminiscens är beroende av koncentra- tionen av minoritetsladdningsbärare i skikt 16 och kommer således att modu- leras av fotoströmmen. För att få god effektivitet hos luminiscensen stängas laddningsbärarna in i skiktet 16 genom att skikten 15 och 17 ges en högre Al-halt och därmed ett större bandgap än skiktet 16. Om resistansen 36 ges ett stort värde erhålles en liten fotoström och därmed en hög luminiscens medan vid låga resistansvärden en lägre fotoström erhålles. Således erhålles då lysdioden 1 är inkopplad en fotoluminiscens till detektorn 63, som är beroende av mätstorheten X.The function of the measuring system can now be explained with the aid of Figures 1, 2, 3b and 4: When the LED 1 is switched on, the upper diode 32 according to Figure H will be illuminated while the diode 33 will be in the dark. This gives a photocurrent through the resistor 36 and a voltage drop across this resistor, which depends on the resistance and thus the measured value X. The magnitude of this voltage will determine the operating point of the diode 32 IV characteristic and the magnitude of the fermin level jump in the pn junction between the layers 15 and 16. While a photocurrent is formed by sucking optically excited minority charge carriers in layer 16 over to layer 15 due to the electric field gradient in the pn junction between these layers, photoluminescence in layer 16 is obtained by a portion of the optically excited minority charge carriers. recombines with holes in the layer during emission of light. This luminescence is dependent on the concentration of minority charge carriers in layer 16 and will thus be modulated by the photocurrent. In order to obtain good efficiency of the luminescence, the charge carriers are closed into the layer 16 by giving the layers 15 and 17 a higher Al content and thus a larger band gap than the layer 16. If the resistor 36 is given a large value, a small photocurrent and thus a high luminescence is obtained while at low resistance values a lower photocurrent is obtained. Thus, when the LED 1 is connected, a photoluminescence is obtained to the detector 63, which is dependent on the measuring variable X.
Då lysdioden 2 är inkopplad kommer endast den nedre fotodioden 33 enligt figur Å att vara inkopplad (se de spektrala sambanden i figur 3b) och med 20 25 30 8201601-5 samma resonemang som ovan erhålles en luminiscenssignal till detektorn 63, som är beroende av referenselementets 37 resistans. Genom Sample- & Hold- teknik kan fotoluminíscenssignalerna vid de båda excitationstidpunkterna extraheras och pâföras ett kvotbildningsdon och/eller andra beräkningsorgan för att erhålla en mätsignal till instrumentet 68, som blir oberoende av givarens temperatur, givaråldring och fibersystemets ljusdämpning. Filtret 62 har till uppgift att filtrera bort reflekterat excitationsljus, varigenom mätsignalen även blir oberoende av reflexer í fiberoptiska skarvar och an- slutningar.When the LED 2 is switched on, only the lower photodiode 33 according to Figure Å will be switched on (see the spectral relationships in Figure 3b) and with the same reasoning as above, a luminescence signal is obtained to the detector 63, which depends on the reference element. 37 resistance. By Sample & Hold technology, the photoluminescence signals at the two excitation times can be extracted and applied to a quotient and / or other computing means to obtain a measurement signal to the instrument 68, which becomes independent of the sensor temperature, sensor aging and fiber system dimming. The function of the filter 62 is to filter out reflected excitation light, whereby the measurement signal also becomes independent of reflections in fiber-optic joints and connections.
I de fall elektriska spänningar skall mätas kan antingen en spänning direkt kopplas till ett fotodiodelement, såsom visas i figur 6, eller också kan transistorelement utnyttjas som i figur 5 och 8 för att modulera fotolumi- niscensen. Fälteffekttransistorerna enligt figur 5 utnyttjas helt enkelt som spänningsstyrda motstånd, varför 38 och 39 här utför samma uppgift som 36 och 37 i figur 4. Spänningskällan H0 i figur 6 kommer att modulera fermi- nivåsprånget i pn-övergången mellan skikten 15 Qch 16 och därmed det elekt- riska fält, som tömmer skikt 16 på minoritetsladdningsbärare. Vid minskade värden på Ux kommer fotoströmmen att öka och fotoluminiscensen att minska, vid ökande värden på Ux kommer fotoströmmen att minska och fotoluminiscensen att öka och vid alltför höga värden på Ux kommer minoritetsladdningsbärare att injiceras till skiktet 16.In cases where electrical voltages are to be measured, either a voltage can be directly connected to a photodiode element, as shown in Figure 6, or transistor elements can be used as in Figures 5 and 8 to modulate the photoluminescence. The field effect transistors according to Figure 5 are simply used as voltage controlled resistors, so 38 and 39 here perform the same task as 36 and 37 in Figure 4. The voltage source H0 in Figure 6 will modulate the fermi level jump in the pn junction between layers 15 and thus electric fields, which empty layer 16 on minority charge carriers. At decreasing values of Ux the photocurrent will increase and the photoluminescence will decrease, at increasing values of Ux the photocurrent will decrease and the photoluminescence will increase and at excessive values of Ux minority charge carriers will be injected into the layer 16.
De element som visas i figur 4-6 (med undantag av spänningskällan 40 i figur 6) kan integreras på samma GaAs-substrat. Ett exempel på en sådan integre- ring visas i figur 7, där det fotoluminiscerande skiktet 16 är placerat i en pnp-struktur, som utgör 2 transistorer, vilka kan differentialkopplas.The elements shown in Figures 4-6 (with the exception of the voltage source 40 in Figure 6) can be integrated on the same GaAs substrate. An example of such an integration is shown in Figure 7, where the photoluminescent layer 16 is placed in a pnp structure, which constitutes 2 transistors, which can be differentially connected.
Skikten enligt figur 7 utgöres av: 12: metallskikt, ohmsk kontakt lä: p-dopat GaAs-substrat 16b: p-dopat Gax Al1_X As 5 5 : n-dopat Ga Al As xö 1-xó _* p-dopat GaAs __; p-dopat Gax7Al1_X7As Ä2-ü5k metallskikt, ohmska kontakter 3% och 35: interferensfilterskiktThe layers according to Figure 7 consist of: 12: metal layer, ohmic contact lä: p-doped GaAs substrate 16b: p-doped Gax Al1_X As 5 5: n-doped Ga Al As xö 1-x p-doped Gax7Al1_X7As Ä2-ü5k metal layer, ohmic contacts 3% and 35: interference filter layer
Claims (13)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8201601A SE430437B (en) | 1982-03-15 | 1982-03-15 | FIBEROPTICAL METHOD FOR SEATING ELECTRICAL AND MAGNETIC SIZES |
| EP83102190A EP0088972A1 (en) | 1982-03-15 | 1983-03-05 | Fibre-optics measuring arrangement |
| JP58039370A JPS58172556A (en) | 1982-03-15 | 1983-03-11 | Optical fiber measuring device for measuring quantity of electromagnetism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8201601A SE430437B (en) | 1982-03-15 | 1982-03-15 | FIBEROPTICAL METHOD FOR SEATING ELECTRICAL AND MAGNETIC SIZES |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8201601L SE8201601L (en) | 1983-09-16 |
| SE430437B true SE430437B (en) | 1983-11-14 |
Family
ID=20346255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8201601A SE430437B (en) | 1982-03-15 | 1982-03-15 | FIBEROPTICAL METHOD FOR SEATING ELECTRICAL AND MAGNETIC SIZES |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0088972A1 (en) |
| JP (1) | JPS58172556A (en) |
| SE (1) | SE430437B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3175935B2 (en) * | 1987-09-30 | 2001-06-11 | 株式会社東芝 | Optical fiber sensor |
| JPH0782026B2 (en) * | 1992-12-15 | 1995-09-06 | 日本電気株式会社 | Contact probe |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1540907A (en) * | 1976-12-07 | 1979-02-21 | Standard Telephones Cables Ltd | System for obtaining data from a plurality of condition responsive optical devices |
| SE414082B (en) * | 1978-10-12 | 1980-07-07 | Asea Ab | FIBEROPTICAL METDON |
| SE8006679L (en) * | 1980-09-24 | 1982-03-25 | Asea Ab | CORRELATIVE FIBER OPTIC METDON |
| SE426345B (en) * | 1981-05-18 | 1982-12-27 | Asea Ab | FIBEROPTICAL METHOD FOR SATURING PHYSICAL AND / OR CHEMICAL SIZES, BASED ON SENSOR MATERIAL WITH A LINEAR LIGHT IN / LIGHT OUT CHARACTERISTICS |
-
1982
- 1982-03-15 SE SE8201601A patent/SE430437B/en unknown
-
1983
- 1983-03-05 EP EP83102190A patent/EP0088972A1/en not_active Withdrawn
- 1983-03-11 JP JP58039370A patent/JPS58172556A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0088972A1 (en) | 1983-09-21 |
| JPS58172556A (en) | 1983-10-11 |
| SE8201601L (en) | 1983-09-16 |
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