SE406043B - PROCEDURE FOR THE PRODUCTION OF HOMOGENICLY DOPED SILICEL CRYSTALS WITH N-LINE BY IRRADIATION OF SILICONE CRYSTALS WITH THERMAL NEUTRONS - Google Patents

PROCEDURE FOR THE PRODUCTION OF HOMOGENICLY DOPED SILICEL CRYSTALS WITH N-LINE BY IRRADIATION OF SILICONE CRYSTALS WITH THERMAL NEUTRONS

Info

Publication number
SE406043B
SE406043B SE7414148A SE7414148A SE406043B SE 406043 B SE406043 B SE 406043B SE 7414148 A SE7414148 A SE 7414148A SE 7414148 A SE7414148 A SE 7414148A SE 406043 B SE406043 B SE 406043B
Authority
SE
Sweden
Prior art keywords
crystals
silicel
homogenicly
doped
irradiation
Prior art date
Application number
SE7414148A
Other languages
Swedish (sv)
Other versions
SE7414148L (en
Inventor
E Haas
J Martin
K Reuschel
M Schnoller
A Muhlbauer
E Spenke
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2356376A external-priority patent/DE2356376A1/en
Priority claimed from DE2362320A external-priority patent/DE2362320A1/en
Priority claimed from DE19732362264 external-priority patent/DE2362264B2/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7414148L publication Critical patent/SE7414148L/xx
Publication of SE406043B publication Critical patent/SE406043B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE7414148A 1973-11-12 1974-11-11 PROCEDURE FOR THE PRODUCTION OF HOMOGENICLY DOPED SILICEL CRYSTALS WITH N-LINE BY IRRADIATION OF SILICONE CRYSTALS WITH THERMAL NEUTRONS SE406043B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2356376A DE2356376A1 (en) 1973-11-12 1973-11-12 PROCESS FOR PRODUCING HOMOGENOUS DOPED SILICON CRYSTALS WITH N-CONDUCTIVITY BY NEUTRON RADIATION
DE2362320A DE2362320A1 (en) 1973-12-14 1973-12-14 Homogeneous doping of silicon monocrystals - by controlled irradiation with thermal neutrons to give desired position and intensity of doping
DE19732362264 DE2362264B2 (en) 1973-12-14 1973-12-14 PROCESS FOR PRODUCING HOMOGENOUS N-DOPED SILICON CRYSTALS BY IRRADIATION WITH THERMAL NEUTRONS

Publications (2)

Publication Number Publication Date
SE7414148L SE7414148L (en) 1975-07-10
SE406043B true SE406043B (en) 1979-01-22

Family

ID=27185618

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7414148A SE406043B (en) 1973-11-12 1974-11-11 PROCEDURE FOR THE PRODUCTION OF HOMOGENICLY DOPED SILICEL CRYSTALS WITH N-LINE BY IRRADIATION OF SILICONE CRYSTALS WITH THERMAL NEUTRONS

Country Status (2)

Country Link
IT (1) IT1025566B (en)
SE (1) SE406043B (en)

Also Published As

Publication number Publication date
IT1025566B (en) 1978-08-30
SE7414148L (en) 1975-07-10

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