SE375881B - - Google Patents

Info

Publication number
SE375881B
SE375881B SE7214937A SE1493772A SE375881B SE 375881 B SE375881 B SE 375881B SE 7214937 A SE7214937 A SE 7214937A SE 1493772 A SE1493772 A SE 1493772A SE 375881 B SE375881 B SE 375881B
Authority
SE
Sweden
Application number
SE7214937A
Inventor
J T Wallmark
M Bakowski
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE7214937A priority Critical patent/SE375881B/xx
Priority to CA185,402A priority patent/CA992217A/en
Priority to DE2356674A priority patent/DE2356674C2/de
Priority to US416669A priority patent/US3922709A/en
Priority to JP48129083A priority patent/JPS501673A/ja
Publication of SE375881B publication Critical patent/SE375881B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
SE7214937A 1972-11-17 1972-11-17 SE375881B (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE7214937A SE375881B (fr) 1972-11-17 1972-11-17
CA185,402A CA992217A (en) 1972-11-17 1973-11-09 Semiconducting element having improved voltage endurance properties
DE2356674A DE2356674C2 (de) 1972-11-17 1973-11-13 Halbleiterbauelement mit einem scheibenförmigen Halbleiterkörper
US416669A US3922709A (en) 1972-11-17 1973-11-16 Semiconducting element having improved voltage endurance properties
JP48129083A JPS501673A (fr) 1972-11-17 1973-11-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7214937A SE375881B (fr) 1972-11-17 1972-11-17

Publications (1)

Publication Number Publication Date
SE375881B true SE375881B (fr) 1975-04-28

Family

ID=20299907

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7214937A SE375881B (fr) 1972-11-17 1972-11-17

Country Status (5)

Country Link
US (1) US3922709A (fr)
JP (1) JPS501673A (fr)
CA (1) CA992217A (fr)
DE (1) DE2356674C2 (fr)
SE (1) SE375881B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2452289A1 (de) * 1974-11-04 1976-05-06 Siemens Ag Halbleiterbauelement
US4165516A (en) * 1975-04-28 1979-08-21 U.S. Philips Corporation Semiconductor device and method of manufacturing same
JPS54149469A (en) * 1978-05-16 1979-11-22 Toshiba Corp Semiconductor device
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung
CN108206219A (zh) * 2017-12-29 2018-06-26 中国振华集团永光电子有限公司（国营第八三七厂） 一种高可靠玻璃钝化表贴封装电压调整二极管及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133278C (fr) * 1960-04-30
US3320495A (en) * 1963-07-02 1967-05-16 Atomic Energy Commission Surface-barrier diode for detecting high energy particles and method for preparing same
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3559002A (en) * 1968-12-09 1971-01-26 Gen Electric Semiconductor device with multiple shock absorbing and passivation layers
US3597269A (en) * 1969-09-30 1971-08-03 Westinghouse Electric Corp Surfce stabilization of semiconductor power devices and article
CH520406A (de) * 1970-09-14 1972-03-15 Bbc Brown Boveri & Cie Thyristor
US3787251A (en) * 1972-04-24 1974-01-22 Signetics Corp Mos semiconductor structure with increased field threshold and method for making the same

Also Published As

Publication number Publication date
DE2356674C2 (de) 1983-11-03
US3922709A (en) 1975-11-25
CA992217A (en) 1976-06-29
JPS501673A (fr) 1975-01-09
DE2356674A1 (de) 1974-05-22

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