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NL166156C
(nl)
*
|
1971-05-22 |
1981-06-15 |
Philips Nv |
Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
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JPS59220952A
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1983-05-31 |
1984-12-12 |
Toshiba Corp |
半導体装置の製造方法
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1982-04-26 |
1983-08-30 |
Bell Telephone Laboratories, Incorporated |
High conductivity metallization for semiconductor integrated circuits
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JPH06314687A
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1993-04-30 |
1994-11-08 |
Sony Corp |
多層配線構造の半導体装置およびその製造方法
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Fabrication of electrical and/or optical crossover signal lines through direct write deposition techniques
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