SE356861B - - Google Patents

Info

Publication number
SE356861B
SE356861B SE00235/69A SE23569A SE356861B SE 356861 B SE356861 B SE 356861B SE 00235/69 A SE00235/69 A SE 00235/69A SE 23569 A SE23569 A SE 23569A SE 356861 B SE356861 B SE 356861B
Authority
SE
Sweden
Application number
SE00235/69A
Inventor
R Pritchett
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE356861B publication Critical patent/SE356861B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
SE00235/69A 1968-01-10 1969-01-09 SE356861B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69693668A 1968-01-10 1968-01-10

Publications (1)

Publication Number Publication Date
SE356861B true SE356861B (ja) 1973-06-04

Family

ID=24799121

Family Applications (1)

Application Number Title Priority Date Filing Date
SE00235/69A SE356861B (ja) 1968-01-10 1969-01-09

Country Status (7)

Country Link
US (1) US3500066A (ja)
BE (1) BE726558A (ja)
CH (1) CH497084A (ja)
FR (1) FR1599403A (ja)
GB (1) GB1257341A (ja)
NL (1) NL145729B (ja)
SE (1) SE356861B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936864A (en) * 1973-05-18 1976-02-03 Raytheon Company Microwave transistor package
US3893159A (en) * 1974-02-26 1975-07-01 Rca Corp Multiple cell high frequency power semiconductor device having bond wires of differing inductance from cell to cell
US4451845A (en) * 1981-12-22 1984-05-29 Avx Corporation Lead frame device including ceramic encapsulated capacitor and IC chip
US4468626A (en) * 1982-01-25 1984-08-28 Harris Corporation Polyphase PDM amplifier
US5103283A (en) * 1989-01-17 1992-04-07 Hite Larry R Packaged integrated circuit with in-cavity decoupling capacitors
US5105260A (en) 1989-10-31 1992-04-14 Sgs-Thomson Microelectronics, Inc. Rf transistor package with nickel oxide barrier
US5109268A (en) * 1989-12-29 1992-04-28 Sgs-Thomson Microelectronics, Inc. Rf transistor package and mounting pad
US20180053698A1 (en) * 2016-08-18 2018-02-22 Freescale Semiconductor, Inc. System and method for characterizing critical parameters resulting from a semiconductor device fabrication process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
US3394268A (en) * 1965-02-01 1968-07-23 Bell Telephone Labor Inc Logic switching circuit
US3416043A (en) * 1965-04-12 1968-12-10 Burroughs Corp Integrated anti-ringing clamped logic circuits
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor

Also Published As

Publication number Publication date
NL6900230A (ja) 1969-07-14
FR1599403A (ja) 1970-07-15
GB1257341A (ja) 1971-12-15
BE726558A (ja) 1969-06-16
NL145729B (nl) 1975-04-15
DE1900539B2 (de) 1972-11-09
CH497084A (de) 1970-09-30
US3500066A (en) 1970-03-10
DE1900539A1 (de) 1969-07-17

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