SE352196B - - Google Patents

Info

Publication number
SE352196B
SE352196B SE698168A SE698168A SE352196B SE 352196 B SE352196 B SE 352196B SE 698168 A SE698168 A SE 698168A SE 698168 A SE698168 A SE 698168A SE 352196 B SE352196 B SE 352196B
Authority
SE
Sweden
Application number
SE698168A
Inventor
J Kerr
E Wadham
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE352196B publication Critical patent/SE352196B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
SE698168A 1967-05-26 1968-05-22 SE352196B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2476267 1967-05-26

Publications (1)

Publication Number Publication Date
SE352196B true SE352196B (en) 1972-12-18

Family

ID=10216859

Family Applications (1)

Application Number Title Priority Date Filing Date
SE698168A SE352196B (en) 1967-05-26 1968-05-22

Country Status (6)

Country Link
CH (1) CH474158A (en)
DE (1) DE1764372C3 (en)
FR (1) FR1573306A (en)
GB (1) GB1228754A (en)
NL (1) NL151558B (en)
SE (1) SE352196B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263009A (en) * 1969-03-31 1972-02-09 Tokyo Shibaura Electric Co A method for manufacturing a semiconductor device and such device prepared thereby
GB1332932A (en) * 1970-01-15 1973-10-10 Mullard Ltd Methods of manufacturing a semiconductor device
FR2096876B1 (en) * 1970-07-09 1973-08-10 Thomson Csf
NL170348C (en) * 1970-07-10 1982-10-18 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING TO A SURFACE OF A SEMICONDUCTOR BODY AGAINST DOTTING AND AGAINST THERMAL OXIDICATION MASK MATERIAL, PRE-FRIENDLY COVERING THE WINDOWS OF THE WINDOWS IN THE MATERIALS The semiconductor body with the mask is subjected to a thermal oxidation treatment to form an oxide pattern that at least partially fills in the recesses.
GB1355806A (en) * 1970-12-09 1974-06-05 Mullard Ltd Methods of manufacturing a semiconductor device

Also Published As

Publication number Publication date
FR1573306A (en) 1969-07-04
DE1764372C3 (en) 1975-01-16
CH474158A (en) 1969-06-15
NL151558B (en) 1976-11-15
DE1764372B2 (en) 1974-06-12
GB1228754A (en) 1971-04-21
DE1764372A1 (en) 1972-04-20
NL6807438A (en) 1968-11-27

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