SE344849B - - Google Patents
Info
- Publication number
- SE344849B SE344849B SE17797/69A SE1779769A SE344849B SE 344849 B SE344849 B SE 344849B SE 17797/69 A SE17797/69 A SE 17797/69A SE 1779769 A SE1779769 A SE 1779769A SE 344849 B SE344849 B SE 344849B
- Authority
- SE
- Sweden
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19681816082 DE1816082A1 (de) | 1968-12-20 | 1968-12-20 | Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
SE344849B true SE344849B (US20040232935A1-20041125-M00001.png) | 1972-05-02 |
Family
ID=5716945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE17797/69A SE344849B (US20040232935A1-20041125-M00001.png) | 1968-12-20 | 1969-12-22 |
Country Status (7)
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH579827A5 (US20040232935A1-20041125-M00001.png) * | 1974-11-04 | 1976-09-15 | Bbc Brown Boveri & Cie | |
US8053867B2 (en) * | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
-
1968
- 1968-12-20 DE DE19681816082 patent/DE1816082A1/de not_active Withdrawn
-
1969
- 1969-12-15 NL NL6918777A patent/NL6918777A/xx unknown
- 1969-12-16 CH CH1869469A patent/CH519788A/de not_active IP Right Cessation
- 1969-12-17 FR FR6943696A patent/FR2026659A1/fr not_active Withdrawn
- 1969-12-19 GB GB1250585D patent/GB1250585A/en not_active Expired
- 1969-12-20 JP JP44102124A patent/JPS5011233B1/ja active Pending
- 1969-12-22 SE SE17797/69A patent/SE344849B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
CH519788A (de) | 1972-02-29 |
DE1816082A1 (de) | 1970-06-25 |
GB1250585A (US20040232935A1-20041125-M00001.png) | 1971-10-20 |
FR2026659A1 (US20040232935A1-20041125-M00001.png) | 1970-09-18 |
DE1816082B2 (US20040232935A1-20041125-M00001.png) | 1978-03-02 |
NL6918777A (US20040232935A1-20041125-M00001.png) | 1970-06-23 |
JPS5011233B1 (US20040232935A1-20041125-M00001.png) | 1975-04-28 |