SE337361B - - Google Patents
Info
- Publication number
- SE337361B SE337361B SE09330/68A SE933068A SE337361B SE 337361 B SE337361 B SE 337361B SE 09330/68 A SE09330/68 A SE 09330/68A SE 933068 A SE933068 A SE 933068A SE 337361 B SE337361 B SE 337361B
- Authority
- SE
- Sweden
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
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- H10P14/6324—
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- H10P14/6304—
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- H10P14/69215—
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- H10P50/282—
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- H10P50/283—
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- H10P95/00—
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- H10W74/43—
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- H10P14/69433—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1967S0110710 DE1644012B2 (en) | 1967-05-07 | 1967-05-07 | METHOD OF DIFFUSING DOPANT FROM THE GAS PHASE INTO A SEMICONDUCTOR SURFACE LOCALLY MASKED WITH A SILICON NITRIDE LAYER |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE337361B true SE337361B (en) | 1971-08-09 |
Family
ID=7530433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE09330/68A SE337361B (en) | 1967-05-07 | 1968-07-05 |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT292786B (en) |
| CH (1) | CH484700A (en) |
| DE (1) | DE1644012B2 (en) |
| FR (1) | FR1573470A (en) |
| GB (1) | GB1234665A (en) |
| NL (1) | NL6809330A (en) |
| SE (1) | SE337361B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2967538D1 (en) * | 1978-06-14 | 1985-12-05 | Fujitsu Ltd | Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride |
| EP0154670B1 (en) * | 1978-06-14 | 1991-05-08 | Fujitsu Limited | Process for producing a semiconductor device having insulating film |
| JPS5621372A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| FR2675824B1 (en) * | 1991-04-26 | 1994-02-04 | Alice Izrael | PROCESS FOR TREATING THE ENGRAVED SURFACE OF A SEMICONDUCTOR OR SEMI-INSULATING BODY, INTEGRATED CIRCUITS OBTAINED ACCORDING TO SUCH A PROCESS AND ANODIC OXIDATION APPARATUS FOR CARRYING OUT SUCH A PROCESS. |
| DE102015102454A1 (en) * | 2015-02-20 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers and environmental sensor |
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1967
- 1967-05-07 DE DE1967S0110710 patent/DE1644012B2/en active Granted
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1968
- 1968-07-02 NL NL6809330A patent/NL6809330A/xx unknown
- 1968-07-04 FR FR1573470D patent/FR1573470A/fr not_active Expired
- 1968-07-05 CH CH1011868A patent/CH484700A/en not_active IP Right Cessation
- 1968-07-05 AT AT06521/68A patent/AT292786B/en active
- 1968-07-05 SE SE09330/68A patent/SE337361B/xx unknown
- 1968-07-05 GB GB1234665D patent/GB1234665A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH484700A (en) | 1970-01-31 |
| DE1644012A1 (en) | 1970-09-24 |
| GB1234665A (en) | 1971-06-09 |
| FR1573470A (en) | 1969-07-04 |
| NL6809330A (en) | 1969-01-09 |
| AT292786B (en) | 1971-08-15 |
| DE1644012B2 (en) | 1976-08-12 |