SE336847B - - Google Patents
Info
- Publication number
- SE336847B SE336847B SE09783/66A SE978366A SE336847B SE 336847 B SE336847 B SE 336847B SE 09783/66 A SE09783/66 A SE 09783/66A SE 978366 A SE978366 A SE 978366A SE 336847 B SE336847 B SE 336847B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US472796A US3383571A (en) | 1965-07-19 | 1965-07-19 | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE336847B true SE336847B (forum.php) | 1971-07-19 |
Family
ID=23876982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE09783/66A SE336847B (forum.php) | 1965-07-19 | 1966-07-18 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3383571A (forum.php) |
| BR (1) | BR6681392D0 (forum.php) |
| DE (2) | DE6602334U (forum.php) |
| ES (1) | ES329228A1 (forum.php) |
| GB (1) | GB1147676A (forum.php) |
| NL (1) | NL151844B (forum.php) |
| SE (1) | SE336847B (forum.php) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2108781B1 (forum.php) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
| US3940783A (en) * | 1974-02-11 | 1976-02-24 | Signetics Corporation | Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure |
| US4226648A (en) * | 1979-03-16 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy |
| DE10126627A1 (de) * | 2001-05-31 | 2002-12-12 | Infineon Technologies Ag | Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL260906A (forum.php) * | 1960-02-12 | |||
| US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
| NL273009A (forum.php) * | 1960-12-29 | |||
| NL287642A (forum.php) * | 1962-01-18 | |||
| US3153731A (en) * | 1962-02-26 | 1964-10-20 | Merck & Co Inc | Semiconductor solid circuit including at least two transistors and zener diodes formed therein |
-
1965
- 1965-07-19 US US472796A patent/US3383571A/en not_active Expired - Lifetime
-
1966
- 1966-07-04 GB GB29921/66A patent/GB1147676A/en not_active Expired
- 1966-07-15 DE DE19666602334U patent/DE6602334U/de not_active Expired
- 1966-07-15 DE DE19661564536 patent/DE1564536B2/de not_active Ceased
- 1966-07-16 ES ES0329228A patent/ES329228A1/es not_active Expired
- 1966-07-18 SE SE09783/66A patent/SE336847B/xx unknown
- 1966-07-18 NL NL666610089A patent/NL151844B/xx unknown
- 1966-07-19 BR BR181392/66A patent/BR6681392D0/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6610089A (forum.php) | 1967-01-20 |
| BR6681392D0 (pt) | 1973-05-15 |
| DE1564536B2 (de) | 1972-06-22 |
| NL151844B (nl) | 1976-12-15 |
| ES329228A1 (es) | 1967-05-01 |
| DE1564536A1 (de) | 1970-05-14 |
| US3383571A (en) | 1968-05-14 |
| DE6602334U (de) | 1969-05-22 |
| GB1147676A (en) | 1969-04-02 |