SE336847B - - Google Patents

Info

Publication number
SE336847B
SE336847B SE09783/66A SE978366A SE336847B SE 336847 B SE336847 B SE 336847B SE 09783/66 A SE09783/66 A SE 09783/66A SE 978366 A SE978366 A SE 978366A SE 336847 B SE336847 B SE 336847B
Authority
SE
Sweden
Application number
SE09783/66A
Inventor
N Turner
A Chen
B Czorny
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE336847B publication Critical patent/SE336847B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
SE09783/66A 1965-07-19 1966-07-18 SE336847B (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US472796A US3383571A (en) 1965-07-19 1965-07-19 High-frequency power transistor with improved reverse-bias second breakdown characteristics

Publications (1)

Publication Number Publication Date
SE336847B true SE336847B (fi) 1971-07-19

Family

ID=23876982

Family Applications (1)

Application Number Title Priority Date Filing Date
SE09783/66A SE336847B (fi) 1965-07-19 1966-07-18

Country Status (7)

Country Link
US (1) US3383571A (fi)
BR (1) BR6681392D0 (fi)
DE (2) DE1564536B2 (fi)
ES (1) ES329228A1 (fi)
GB (1) GB1147676A (fi)
NL (1) NL151844B (fi)
SE (1) SE336847B (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (fi) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3940783A (en) * 1974-02-11 1976-02-24 Signetics Corporation Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
DE10126627A1 (de) * 2001-05-31 2002-12-12 Infineon Technologies Ag Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260906A (fi) * 1960-02-12
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
NL273009A (fi) * 1960-12-29
NL287642A (fi) * 1962-01-18
US3153731A (en) * 1962-02-26 1964-10-20 Merck & Co Inc Semiconductor solid circuit including at least two transistors and zener diodes formed therein

Also Published As

Publication number Publication date
GB1147676A (en) 1969-04-02
BR6681392D0 (pt) 1973-05-15
DE1564536A1 (de) 1970-05-14
ES329228A1 (es) 1967-05-01
DE6602334U (de) 1969-05-22
DE1564536B2 (de) 1972-06-22
NL6610089A (fi) 1967-01-20
NL151844B (nl) 1976-12-15
US3383571A (en) 1968-05-14

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