SE335178BSE02337/70ASE233770ASE335178BSE 335178 BSE335178 BSE 335178BSE 02337/70 ASE02337/70 ASE 02337/70ASE 233770 ASE233770 ASE 233770ASE 335178 BSE335178 BSE 335178B
Authority
SE
Sweden
Application number
SE02337/70A
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea AbfiledCriticalAsea Ab
Priority to SE02337/70ApriorityCriticalpatent/SE335178B/xx
Priority to DE2107566Aprioritypatent/DE2107566C3/de
Priority to GB2255671Aprioritypatent/GB1330561A/en
Publication of SE335178BpublicationCriticalpatent/SE335178B/xx
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
H10D84/131—Thyristors having built-in components
H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D18/00—Thyristors
H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs