SE324185B - - Google Patents
Info
- Publication number
- SE324185B SE324185B SE12089/64A SE1208964A SE324185B SE 324185 B SE324185 B SE 324185B SE 12089/64 A SE12089/64 A SE 12089/64A SE 1208964 A SE1208964 A SE 1208964A SE 324185 B SE324185 B SE 324185B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US315835A US3308351A (en) | 1963-10-14 | 1963-10-14 | Semimetal pn junction devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SE324185B true SE324185B (de) | 1970-05-25 |
Family
ID=23226269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE12089/64A SE324185B (de) | 1963-10-14 | 1964-10-08 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3308351A (de) |
CH (1) | CH438492A (de) |
DE (1) | DE1489027B2 (de) |
GB (1) | GB1057250A (de) |
NL (1) | NL6411283A (de) |
SE (1) | SE324185B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3478368D1 (en) * | 1984-11-23 | 1989-06-29 | Ibm | Insulated-gate field-effect transistor employing small band-gap material |
DE4336414A1 (de) * | 1993-10-21 | 1994-05-19 | Rohde Hans Joachim Dr Ing | Halbleiter-Tunnelelement mit negativem Widerstand |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2882467A (en) * | 1957-05-10 | 1959-04-14 | Bell Telephone Labor Inc | Semiconducting materials and devices made therefrom |
US2882195A (en) * | 1957-05-10 | 1959-04-14 | Bell Telephone Labor Inc | Semiconducting materials and devices made therefrom |
NL273326A (de) * | 1961-04-14 |
-
1963
- 1963-10-14 US US315835A patent/US3308351A/en not_active Expired - Lifetime
-
1964
- 1964-09-29 NL NL6411283A patent/NL6411283A/xx unknown
- 1964-09-30 GB GB39740/64A patent/GB1057250A/en not_active Expired
- 1964-10-03 DE DE19641489027 patent/DE1489027B2/de active Pending
- 1964-10-08 SE SE12089/64A patent/SE324185B/xx unknown
- 1964-10-14 CH CH1334464A patent/CH438492A/de unknown
Also Published As
Publication number | Publication date |
---|---|
US3308351A (en) | 1967-03-07 |
DE1489027B2 (de) | 1972-10-26 |
NL6411283A (de) | 1965-04-15 |
GB1057250A (en) | 1967-02-01 |
DE1489027A1 (de) | 1969-06-19 |
CH438492A (de) | 1967-06-30 |