SE319240B - - Google Patents
Info
- Publication number
- SE319240B SE319240B SE14409/67A SE1440967A SE319240B SE 319240 B SE319240 B SE 319240B SE 14409/67 A SE14409/67 A SE 14409/67A SE 1440967 A SE1440967 A SE 1440967A SE 319240 B SE319240 B SE 319240B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB47536/66A GB1207961A (en) | 1966-10-24 | 1966-10-24 | Improvements in and relating to transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE319240B true SE319240B (de) | 1970-01-12 |
Family
ID=10445332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE14409/67A SE319240B (de) | 1966-10-24 | 1967-10-20 |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE705523A (de) |
| CH (1) | CH484520A (de) |
| DE (1) | DE1614288A1 (de) |
| GB (1) | GB1207961A (de) |
| NL (1) | NL6714339A (de) |
| SE (1) | SE319240B (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4035670A (en) * | 1975-12-24 | 1977-07-12 | California Linear Circuits, Inc. | Transistor stored charge control using a recombination layer diode |
| CN117558688A (zh) * | 2023-11-24 | 2024-02-13 | 甬江实验室 | 压接型功率模块及电子设备 |
-
1966
- 1966-10-24 GB GB47536/66A patent/GB1207961A/en not_active Expired
-
1967
- 1967-10-20 SE SE14409/67A patent/SE319240B/xx unknown
- 1967-10-21 NL NL6714339A patent/NL6714339A/xx unknown
- 1967-10-23 BE BE705523D patent/BE705523A/xx unknown
- 1967-10-23 CH CH1477467A patent/CH484520A/de not_active IP Right Cessation
- 1967-10-24 DE DE19671614288 patent/DE1614288A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| BE705523A (de) | 1968-04-23 |
| GB1207961A (en) | 1970-10-07 |
| NL6714339A (de) | 1968-04-25 |
| CH484520A (de) | 1970-01-15 |
| DE1614288A1 (de) | 1970-08-20 |