SE317106B - - Google Patents
Info
- Publication number
- SE317106B SE317106B SE14/64A SE1464A SE317106B SE 317106 B SE317106 B SE 317106B SE 14/64 A SE14/64 A SE 14/64A SE 1464 A SE1464 A SE 1464A SE 317106 B SE317106 B SE 317106B
- Authority
- SE
- Sweden
- Prior art keywords
- output
- substrate
- circuit
- transistor
- gate electrode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 8
- 230000005669 field effect Effects 0.000 abstract 3
- 230000001419 dependent effect Effects 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D1/00—Demodulation of amplitude-modulated oscillations
- H03D1/14—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
- H03D1/18—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D13/00—Circuits for comparing the phase or frequency of two mutually-independent oscillations
- H03D13/007—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations
- H03D13/008—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations using transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D3/00—Demodulation of angle-, frequency- or phase- modulated oscillations
- H03D3/02—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
- H03D3/06—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
- H03D3/14—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of semiconductor devices having more than two electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
- H03G11/06—Limiters of angle-modulated signals; such limiters combined with discriminators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Processing Of Color Television Signals (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US248947A US3348062A (en) | 1963-01-02 | 1963-01-02 | Electrical circuit employing an insulated gate field effect transistor having output circuit means coupled to the substrate thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SE317106B true SE317106B (ru) | 1969-11-10 |
Family
ID=22941386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE14/64A SE317106B (ru) | 1963-01-02 | 1964-01-02 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3348062A (ru) |
AT (1) | AT253565B (ru) |
BE (1) | BE642021A (ru) |
CH (1) | CH432602A (ru) |
DE (1) | DE1464397A1 (ru) |
ES (1) | ES294962A3 (ru) |
GB (1) | GB1066634A (ru) |
NL (1) | NL302841A (ru) |
SE (1) | SE317106B (ru) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1313534A (en) * | 1970-05-06 | 1973-04-11 | Parke Davis & Co | Electroacoustic investigation apparatus |
US3676785A (en) * | 1970-12-10 | 1972-07-11 | Honeywell Inf Systems | High gain, ultra linear detector for frequency modulation |
US4256977A (en) * | 1978-12-26 | 1981-03-17 | Honeywell Inc. | Alternating polarity power supply control apparatus |
US4256979A (en) * | 1978-12-26 | 1981-03-17 | Honeywell, Inc. | Alternating polarity power supply control apparatus |
US4256978A (en) * | 1978-12-26 | 1981-03-17 | Honeywell Inc. | Alternating polarity power supply control apparatus |
US4359654A (en) * | 1980-01-28 | 1982-11-16 | Honeywell Inc. | Alternating polarity power supply control apparatus |
US4647848A (en) * | 1984-03-05 | 1987-03-03 | Tektronix, Inc. | Broadband RF power detector using FET |
US4684967A (en) * | 1984-05-04 | 1987-08-04 | Integrated Logic Systems, Inc. | Low capacitance transistor cell element and transistor array |
CN117908627B (zh) * | 2024-03-19 | 2024-05-24 | 成都市思叠科技有限公司 | 一种基于反向器原理的负压基准厚膜混合集成电路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
US3021433A (en) * | 1957-12-31 | 1962-02-13 | Honeywell Regulator Co | Asymmetrically conductive device employing semiconductors |
US3010033A (en) * | 1958-01-02 | 1961-11-21 | Clevite Corp | Field effect transistor |
NL265382A (ru) * | 1960-03-08 | |||
NL267831A (ru) * | 1960-08-17 |
-
0
- NL NL302841D patent/NL302841A/xx unknown
-
1963
- 1963-01-02 US US248947A patent/US3348062A/en not_active Expired - Lifetime
- 1963-12-17 CH CH1549663A patent/CH432602A/de unknown
- 1963-12-20 GB GB30468/63A patent/GB1066634A/en not_active Expired
- 1963-12-23 DE DE19631464397 patent/DE1464397A1/de active Pending
- 1963-12-31 ES ES0294962A patent/ES294962A3/es not_active Expired
- 1963-12-31 BE BE642021A patent/BE642021A/xx unknown
-
1964
- 1964-01-02 SE SE14/64A patent/SE317106B/xx unknown
- 1964-01-02 AT AT264A patent/AT253565B/de active
Also Published As
Publication number | Publication date |
---|---|
CH432602A (de) | 1967-03-31 |
AT253565B (de) | 1967-04-10 |
DE1464397A1 (de) | 1969-03-06 |
GB1066634A (en) | 1967-04-26 |
NL302841A (ru) | |
US3348062A (en) | 1967-10-17 |
ES294962A3 (es) | 1963-10-16 |
BE642021A (ru) | 1964-04-16 |
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