SE200048C1

SE200048C1 -

Info

Publication number: SE200048C1
Authority: SE
Publication date: 1965-01-01

Description

Uppfinnare: E Groschwitz, K Siebertz och J Johannesson Prioritet begard frcin den 30 augusti 1956 (Forbundsrepubliken Tgskland) FOreliggande uppfinning grundar sig ph det riinet, att elektroniska halvledare uppvisa plasmasvangningar, vilka i ovrigt blott iakttagits i gasurladdningar och vilka aro baserade pa prineiperna fOr Lorentz' elektrontcori, vilka principer hittills betraktats som giltiga endast f Or metalliska ledare. Uppfinningen avser den tekniska utnyttjningen av de i arbetel av E. Groschwitz och K. Siebertz: »Zur Frage der Plasmaschvvingungen und -wellen in Halbleitern I» nedlagda teoretiska ronen betrafCantle det plasmaliknande forhallandet hos halvledare. Det fran uppfinnarna harr5rande innehallet i denna avhandling bildar i sin helhet en del av foreliggande beskrivning. Vidare aro i manuskriptet »Zur Plasmatheorie elektronischer Halbleiter» av uppfinnaren Eberhard Groschwitz de till grund for uppfinningen liggande undersokningarna narmare motiverade och utvecklade. Aven innehallet i detta manuskript bildar en del av foreliggande beskrivning. Inventors: E. Groschwitz, K. Siebertz and J. Johannesson Priority requested before 30 August 1956 (Federal Republic of Germany) The present invention is based on the principle that electronic semiconductors exhibit plasma oscillations which are otherwise observed only in gas discharges and which are based on Lorine. 'elektrontcori, which principles have hitherto been considered valid only for metallic conductors. The invention relates to the technical utilization of the theoretical foundations laid down in the works of E. Groschwitz and K. Siebertz: "Zur Frage der Plasmaschvvingungen und -wellen in Halbleitern I" concerning the plasma-like relationship of semiconductors. The content of this dissertation derived from the inventors forms in its entirety a part of the present description. Furthermore, in the manuscript "Zur Plasmatheorie elektronischer Halbleiter" by the inventor Eberhard Groschwitz, the investigations underlying the invention are further motivated and developed. The contents of this manuscript also form part of the present description.

Det ãr i och for sig Mitt genom ett arbete av G. Drosselhaus, A. F. Kipp, C. Kittel i Phys. Rev. 100, 618 (1955), att man i en halvledarekristall, pa vars laddningsbarare inga likformiga accelerationskraf Ler verka, genom elektromagnetiska hOgfrekvenssvangningar mom centimetervagomradet kan alstra tvungna svangningar av laddningsbararna, vilket yttrar sig i en andring av det elektriska motstan(let hos halvledarekristallen resp. i en andring av impedansen hos den halvledarekristallen omgivande elektriska halledaren i beroende av den tvungna svangningens frekvens. Det har dock hittills joke vent kant, att det aven ãr inojligt att i en halvledare alstra fria svang- Duni. kl. 21 al: 36/02 ningar och att &wen en halvledare med strotnmande plasma, dvs. en sadan, vars laddningsbarare utfOra en driftrorelse, kan utfora fria och tvungna svangningar. Vidare har det icke varit khnt, att sadana svangningar kunna uttagas genom en kopplingsanordning. It is in itself Mitt through a work by G. Drosselhaus, A. F. Kipp, C. Kittel in Phys. Reef. 100, 618 (1955), that in a semiconductor crystal, on whose chargeable beams no uniform acceleration force seems to act, by electromagnetic high-frequency oscillations about the centimeter carriage, one can produce forced oscillations of the charge bars, which is expressed in a change in the semiconductor crystal in a change in the impedance of the semiconductor crystal surrounding the electrical semiconductor depending on the frequency of the forced oscillation.However, so far it has the joke vent edge, that it is also impossible to generate free oscillation in a semiconductor.Dun.21 at 21 al: 36/02 and that a semiconductor with flowing plasma, i.e. one such, whose chargers perform an operating motion, can perform free and forced oscillations, and it has not been possible for such oscillations to be taken out by means of a coupling device.

Enligt uppfinningen alstras de namnda, nu funna plasmasvangningarna i halvledare, 10- retradesvis halvledare-enkristaller, genom en an.ordning enligt patentansprhkert. Ett halvledarematerial an.vandes, vilket uppfyller villkoret : 1/3 (f2.02+ pp02)(1/12 + YP2VP) >0, och genom att laddningsbararna i halvledaren genom en kortvarig svangningsalstring, vilken innehaller den Langinuirska plasmaegenfrekvensen hos halvledarekroppen sjalv eller modifierad ph nagot satt, bibringas en stot och/eller genom en driftverkan kortvarigt oiler varaktigt accelereras. Harvid betyder f2 egenfrekvensen hos de fria dampade svangningarna (Langmuirs plasmafrekvens) som funktion av den i indexet angivna storningsstalle-tatheten no av donatorerna och po av acceptorerna. y, och 7, betyda en for elektronerna n och defektelektronerna p karakteristisk friktionskonstant. Sarskilt a" ph i och for sig kant satt: e2no Q no =•• och t202== + L x. e2 PG • 1 L mp_ 2— — I dessa formler betyder e elementarladdningen och mu resp. m„ den effektiva massan av de negativa resp. positiva laddningsbararna. L ar en depolarisationsfaktor, som spelar rollen av en kopplingskonstant och exempelvis ãr i och f8r sig kand genom det namnda arbetet av Dresselhaus och andra. Den kan bestammas genom matningar av t. ex. ledningsformagan vid den onskade frekvensen eller ocksa med tillhj alp av optiska storheter. Den ax i forsta rummet beroende av arten av halvledaresubstansen, gitterstrukturen, av tillsatser till halvledaresubstansen, av elektriska och magnetiska falt, av temperaturen, air gitterorienteringen samt av stOrningar, mekaniska spanningar och liknande i gittret och av yttillstand. Vidare fraingar av de till grmid for uppfinningen liggande undersokningarna, att den i synnerhet aven varierar med frekvensen. Storheten L kan antaga godtyckliga varden, t. ex. vardet noll, om plasmasvangningarna ske i ett strommande medium. Den torde dock vara skild frau noll, om svangningar uppsta i dct vilande plasmat. xo betyder den dielektriska susceptibiliteten hos glittret, vii-ken i overensstammelse med erfarenheten kan betraktas som tillnarmelsevis oberoende air .frekvensen. De av Pines och Bohm angivna kriterierna for plasmaoscillationer hos en elektrongas aro aven forutsatta vid de °van angivna villkoren. According to the invention, the said, now found plasma oscillations in semiconductors, 10-retraction semiconductor single crystals, are generated by a device according to the patent claim. A semiconductor material was used, which fulfilled the condition: 1/3 (f2.02 + pp02) (1/12 + YP2VP)> 0, and by charging the semiconductors in a short-term oscillation, which contains the Langinuir plasma natural frequency of the semiconductor body itself or modified ph something set, imparted to a stump and / or by a short-acting oiler permanently accelerated. In this case, f2 means the natural frequency of the free-vapor oscillations (Langmuir's plasma frequency) as a function of the magnification number no of the donors and po of the acceptors given in the index. y, and 7, mean a characteristic friction constant for the electrons n and the defective electrons. Separately a "ph in and of itself edge set: e2no Q no = •• and t202 == + L x. E2 PG • 1 L mp_ 2— - In these formulas, the elemental charge and mu or m respectively mean the effective mass of The negative or positive charge bars are a depolarization factor, which plays the role of a coupling constant and is, for example, in and of itself known through the mentioned work of Dresselhaus and others.It can be determined by feeding, for example, the conductor shape at the desired frequency or also with the aid of optical quantities.The axis primarily depends on the nature of the semiconductor substance, the lattice structure, on additives to the semiconductor substance, on electric and magnetic fields, on the temperature, the air lattice orientation and on disturbances, mechanical stresses and the like in the lattice and of Furthermore, the investigations underlying the basis of the invention show that it in particular also varies with the frequency.The quantity L can assume arbitrary values, eg the value zero, if the plasma oscillations take place in a flowing medium. However, it should be different from zero, if fluctuations occur in the dct dormant plasma. xo means the dielectric susceptibility of the glitter, which in accordance with experience can be regarded as approximately independent of the air frequency. The criteria for plasma oscillations of an electron gas specified by Pines and Bohm are also assumed under the conditions specified above.

Genom den ovan angivna iden (den. ur elektronteorien i forening med speciella rorelse.ekvationer utvecklade regeln) är den allman-na grunden given fOr att plasmasvangningar overhuv-ad taget kunna alstras, uppratthallas och utnyttjas. Darvid haul& sig svangningstillstandet till de sex plasmatillstandsstorheterna, namligen det elektriska faltet E, dot magnetiska faltet H, elektrontatheten n, tatheten p av defektelektronerna, elektronernas drifthastighet v, och defektelektronernas drifthastighet vi,. Alltefter de givna forhallandena kunna antingen ails, sex plasmatillstandsstorheterna oscillera med samma frekyens, eller ocksa kunna vissa av tillsatsstorheterna Overhuvud taget joke oscillera, utan exempelvis fOrbIiva konstanta eller utfora en aperiodisk forandring, eller kunna de befinna sig i ett svangningstillstand med annan frekyens. Sarskilt viktigt är det fallet, att laddningsbararnas driftrorelse har konstant riktning (fallet med strommande plasma), varvid pa denna rorelse eventuellt kan overlagras en aperiodicitet, I. ex. en dampning och/eller en 'oscillation. Through the above idea (the rule developed from electron theory in conjunction with special motion equations), the general basis is given for plasma oscillations to be generated, maintained and utilized at all. Thereby the state of oscillation increases to the six plasma state quantities, namely the electric field E, the magnetic field H, the electron density n, the density p of the defective electrons, the operating speed of the electrons v, and the operating speed of the defective electrons vi ,. Depending on the given conditions, either the ails, the six plasma state quantities can oscillate with the same frequency, or also some of the addition quantities can oscillate at all, without, for example, remain constant or perform an aperiodic change, or they can be in a different state of oscillation. Of particular importance is the case that the operating motion of the charge bars has a constant direction (the case of flowing plasma), whereby an aperiodicity may possibly be superimposed on this motion, I. an evaporation and / or an 'oscillation.

A ritningen visas sasom exempel nagra utfOringsformer av anordningar for forverkligande och utnyttjande av plasmasvangningarna hos en halvledarekropp enligt uppfinmngen. The drawing shows, by way of example, some embodiments of devices for realizing and utilizing the plasma oscillations of a semiconductor body according to the invention.

Fig. 1 visar en halvledare-enkristall 1 av eft halvledarematerial med hog barare-rtirlighet, sarskilt en forening av elementen i grupperna III och V i det periodiska systernet. Genont sparrfria kontakter 2 och 3 patryckas andarna av kristallen- en Iikspanning, vilken antydes. med ett plus- och ett minustecken. Medelst tva i forhallande till halvledarekristallen isolerat anordnade kondensatorplattor 4 och 5 aro tva elektriska svangningskretsar 6 och kopplade med olika ytdelar av halviedarelcristallen. Kretsen 6 är en ingangskrets, under del att kretsen 7 ar kopplad som utgangskrets. Bada kretsarna aro avstamda till halvledarekristallens 1 plasmaegenfrekvens. Fig. 1 shows a semiconductor single crystal 1 of semi-semiconductor material with high barrier conductivity, in particular a union of the elements in groups III and V of the periodic table. Through spirit-free contacts 2 and 3, the spirits are pressed by the crystal voltage, which is indicated. with a plus and a minus sign. By means of two capacitor plates 4 and 5 arranged in relation to the semiconductor crystal isolated, there are two electrical oscillating circuits 6 and connected to different surface parts of the semiconductor crystal. The circuit 6 is an input circuit, provided that the circuit 7 is connected as an output circuit. Both circuits are tuned to the plasma natural frequency of the semiconductor crystal 1.

Verkningssattet av anordningen ar foljande: Kretsens 6 ingang tillfores en kort rektangular energiimpuis av tillracklig styrka, genom vilken plasmat i halvledarekristallen i narheten av kondensatorplattan 4 bringas alt utfora egensvangningar. Harvid forutsattes, att impulslangden ax sa ringa, all det genom Fourier-analys erhallna frekvensspektret flir denna irnpuls innehaller plasmaegenfrekvensen med tillracklig styrka. Genom faltet ay den. elektroderna 2 och 3 tillfOrda likspanningen utovas en sadan driftverkan ph halvledarekristallens laddningsbarare, sarskilt majoritetsbarare, att den fria 'plasmasvangningen riir sig till det stifle, dar kondensatorplattan 5 befinner sig, varigenom dhstades svangningskretsen 7 paverkas och yid dess utgang en sinussvangning med plasmaegensvangningens frek-vens kan uttagas. fig. 2delta utforingsexempel modifie- rat pa sadant satt, att svangningsalstringen utilises genom en elektronstromning ay tillraeldigt hog hastighet (i synnerhet hogra an elektronernas termiska medelhastighet). FOr delta andamal är ph halvledarekristallens yin anordnad en inverkningsanordning — enligt ritningen ett elektrodparsom formar kort- varigt, varaktigt eller upprepat, eventuellt periodiskt alstra en hlig elektrisk faltstyrka, t. ex. tatt framf Or eller bakom Zener-genombrottet och/eller stOtjonisering i halvledarekristallen. The operation of the device is as follows: The input of the circuit 6 is supplied with a short rectangular energy impulse of sufficient strength, through which the plasma in the semiconductor crystal near the capacitor plate 4 is caused to perform natural oscillations. In this case, it was assumed that the pulse length was so small that all the frequency spectrum obtained by Fourier analysis for this pulse contains the plasma natural frequency with sufficient strength. Through the field ay it. the direct voltage applied to the electrodes 2 and 3 is exerted on the charger of the semiconductor crystal, in particular by a majority majority, so that the free plasma oscillation travels to the position where the capacitor plate 5 is located, whereby the oscillation circuit of the oscillation can be removed. Fig. 2 are exemplary embodiments modified in such a way that the oscillation generation is utilized by an electron flow at a sufficiently high speed (in particular higher than the thermal average speed of the electrons). For delta andamal, the yin of the ph semiconductor crystal is arranged an actuating device - according to the drawing an electrode pair which forms briefly, permanently or repeatedly, possibly periodically generating a high electric field strength, e.g. taken before or after the Zener breakthrough and / or stationation in the semiconductor crystal.

Exemplet enligt fig. 1 och 2 är att uppfatta som ett allmant modellfall, som visar hur anordningen enligt uppfinningen kan uppbyggas och anvandas. Man ser i synnerhet av exemplet, att anordningen enligt uppfinningen kan finna anvandning som oscillator, varvid en godtycklig energi-excitering kan omvandlas till en bestamd svangning. Denna svangning kan eventuellt uppratthallas genom att de hada kretsarna 6 och 7 aro aterkopplade med varandra, varvid eventuellt i aterkopplingskanalen kan mama inbyggt aven ett flirstarkningselement, exempeIvis i form av en riir- eller transistorkoppling eller liknande. Aven andra utfOranden och modifikationer ay exemplet ho mojliga. The example according to Figs. 1 and 2 is to be understood as a general model case, which shows how the device according to the invention can be built up and used. It can be seen in particular from the example that the device according to the invention can find use as an oscillator, whereby an arbitrary energy excitation can be converted into a certain oscillation. This oscillation can optionally be maintained by having the circuits 6 and 7 connected to each other, whereby possibly in the feedback channel a multi-reinforcement element can be built in, for example in the form of a tube or transistor connection or the like. Other embodiments and modifications in the example are also possible.

Anordningen kan exempelvis kopplas °ell anvandas som frekvensfilter. For .detta andamal kan ingangen varaktigt exciteras medelst en frekvensblandning, under det att vid ut- — —3 giingen uttages en svangning av onskad frekyens. I detta fall, liksom Sven i andra fall, behover vid utgangen overhuvud taget icke finnas flagon avstamd eller atminstone icke nagon skarpt avstamd krets. Avensa. kan -- delta galler hterigen allmant — likspanningen vid elektroderna 2 och 3 saknas eller blott korlvarigt tillforas, anda tills de fria plasmasviingningarna utbildats. I detta fall skullc utkoppling ske vid ingangsstallet. Vid oscillatorkopplingen arbetar man emellertid lampligen med standigt driftfalt, fran vilket samti(HO energien for uppratthallande av sviingningarna tages. A andra sidan finnes Sven miijligheten att genom variation av fillet vid elektroderna 2 och 3, eller annant. ex. ter- miskdriftalstring hstadkomma en styrning av plasmasvangningarna, eventuellt en modulation. The device can, for example, be connected or used as a frequency filter. For this purpose, the input can be permanently excited by means of a frequency mixture, while at the output a oscillation of the desired frequency is taken. In this case, as in Sven in other cases, at the exit there is no need for flake descent at all or at least no sharply descended circle. Avensa. can - delta grid hterigen generally - the DC voltage at electrodes 2 and 3 is missing or only short-lived applied, breath until the free plasma oscillations are formed. In this case, disconnection should take place at the entrance stable. In the case of the oscillator coupling, however, one works suitably with a constant operating field, from which at the same time the HO energy for maintaining the oscillations is taken. On the other hand, there is the possibility of producing a control by varying the fillet at electrodes 2 and 3, or otherwise. of the plasma oscillations, possibly a modulation.

Vidare Sr all beakta, att i del beskrivna ulfiiringsexemplet transporten av ett svangningstillstand sker fran ett stalk av halvledaren till ett annat stalle, varvid transporthastigheten är beroende av driftverkan, sadan den --- enligt utforingsexempletastadkom- mes genom det elektriska likspanningsfaltet. Driftverkan kan emellertid Sven a sin sida vara utbildad som oscillation -- sarskilt pa grand av ett elektriskt och/eller termiskt vaxelfaltvarvid eventuellt en pulserande driftriirelse uppstar, vilken ibland, i synnerhet rytmiskt Overstiger exciteringsenergien ()eh darigenom uppratthaller svangningsalstringen. Genom avstamning av faltstyrkan och (farmed av drifthastigheten hos laddningsbararna, sarskilt majoritetsbararna, ph avstandet mellan uttagen 4 och 5 oak eventual!: Oven pa egenfrekvensen 6 kunna darfar yllerligare sarskilda verkningar uppnas. Sarskilt !tan balvledarekristallen anvandas som fordrojnings- rasp. loptidselement i sammanhang med sviingningsenergien. Pet Sr Oxen mojligt all astadkomma en halvledareanordning, som till sin uppbyggnad och silt verkningssall uppvisar analogi med ett vandringsvagrOr. En vasentlig betydelse av uppfinningen ligger till °eh med i att de vid vandringsvagrar utvecklade synpunkterna med tillhj alp av de genom uppfinningen givna grundsatserna och den i exetnplet beskrivna anordningen kunna overliiras till halvledare-konstruktionselement. Del liar pa overraskande :All visat sig, att plasmaegensvangningen hos halvledarna med hiig barare-hastighet vid de Mom halvledaretek niken brukliga dimensionerna och ytegen- skhos halvledarekristallerna storleks- ordningsmassigt ligger inom centimeteromradet, sa att enligt uppfinningen ett lampligt anvandningsomrade for anordningen enligt uppfinningen erhalles sarskilt Mom detta och angransande frekvensomraden. Anvandningsmojligheterna for uppfinningen visa sig vara sarskilt talrika, Sven ph grund av att den ursprungliga alstringen av plasmaegensvling- ningarna kan uppnas _antingen genom en ursprunglig kortvarig excitering eller genom driftverkan av ett elektriskt falt eller nagon annan kraft pa laddningsbararna enbart, eller ocksa kunna verkningarna atminstone tidvis kombin.eras med varandra. Furthermore, it should be borne in mind that in the embodiment described in part the transport of a state of oscillation takes place from one stalk of the semiconductor to another stable, the transport speed being dependent on the operating action, so that it --- according to the embodiment example takes place through the electric DC field. Operating action, however, Sven can in turn be trained as an oscillation - especially due to an electric and / or thermal gear drop whereby a pulsating operating motion occurs, which sometimes, in particular rhythmically exceeds the excitation energy () and thereby maintains the oscillation generation. By descending the field strength and (depending on the operating speed of the charging bars, especially the majority bars, the distance between the sockets 4 and 5), even on the natural frequency 6, further special effects can be achieved. The separate ball conductor crystal is used as a displacement element. Pet Sr Oxen It is possible to achieve a semiconductor device which, in its structure and silt effect, has an analogy with a traveling car. An essential importance of the invention lies in the fact that the views developed in hiking cars with the aid of the invention given by the invention. The principles and the device described in the example can be deduced from semiconductor components. is located within the centimeter range, so that according to the invention a suitable area of use for the device according to the invention is obtained separately with this and adjacent frequency ranges. The application possibilities of the invention prove to be particularly numerous, because the initial generation of the plasma oscillations can be achieved either by an initial short-term excitation or by the action of an electric field or some other force on the charge bars alone, or also the effects may at least occasionally are combined with each other.

En ytterligare kombinationsm011ighet skall forklaras med -ledning av fig. 3. Vid detta utfaringsexempel Sr for inledande av en SVallgningsexcitering ett halvledarekroppen 1 omslutande, ihaligt rot- 8 an.ordnat pa halvledarckristallen 1, vilket rors dimensioner aro sti. valda, att plasmaegenfrekvensen, vilken forefinnes i impulsen, atminstone icke fOrsvagas. Medelst ett ihaligt rot. 9 med motsvarande, fOr Overforingen gynnsamma dimensioner uttages ater plasmafrekvensen och ledes vidare till ett signalen bearbetande instramertt och/eller en aekumuleringsanordning, I. ex. en raknemaskin, ett elektriskt minne eller liknandc eller ocksa en vanlig meddelande-apparat. Enligt en sfirskild utbildning av uppfinningsiden Sr ph halvledarekristallens yta anordnad en som injektor (emitter) verkande elektrod 10, medelst vilken laddningsbarare kunna in-jiceras i halvledarekristallen. Genorn derma -injektion andras plasmats egenfrekvens. A further combination possibility will be explained with the guidance of Fig. 3. In this exemplary embodiment, for initiating a wave excitation, a semiconductor body 1 enclosing, hollow root arranged on the semiconductor crystal 1, which is the dimensions of the tube. selected that the plasma natural frequency present in the pulse is at least not attenuated. By means of a perennial root. 9 with the corresponding dimensions favorable for the transfer, the plasma frequency is taken out again and passed on to a signal processing instrument and / or an accumulation device, I. ex. a razor, an electric memory or the like or even a standard messaging device. According to a separate embodiment of the invention, the surface of the semiconductor crystal Sr ph is provided with an electrode 10 acting as an injector (emitter), by means of which a charger can be injected into the semiconductor crystal. Genorn derma injection of the natural frequency of other plasma.

All-after arten av injektionen (positiva och/eller -negativa laddningsbarare) kan frekvensen iikas eller minskas. Andringen kan ske en gang, flera ganger eller periodiskt, varigenom godtyckliga slag av styrning av de alstrade och/eller Overforda plasmasvangningarna (frekvensmodulationer, dampningar, periodiska frekvensandringar och liknande) kunna astadkommas. Eventuellt kunna Hera injektorer vara anordnade pa alike stallen av halvledareytan eller ocksh i dess inre ph lampliga, eventuellt foranderhara avstand. PS kristallen kan eventuellt Oven en eller flera kollektorer yam tillordnade injektoranordningen. &Isom injektor kommer i ftirsta runtmet en spatselektrod eller en p-n-tivergang i fraga. The all-after nature of the injection (positive and / or negative chargers) can be increased or decreased. The change can take place once, several times or periodically, whereby arbitrary types of control of the generated and / or Overforda plasma oscillations (frequency modulations, dampings, periodic frequency changes and the like) can be achieved. Hera injectors may be arranged in the same position of the semiconductor surface or also in its internal pH appropriate, possibly changing their distance. The PS crystal may optionally include one or more collectors associated with the injector device. & Isom injector comes in the first round with a spatula electrode or a p-n tivergence in question.

Utforingsexemplen kunna Oven modifieras pa del sattet, att de sparrfria kontakterna. 2 och 3 ersattas med isolerande eller atminstone blott i en riktning genomslappande elektroder, s5 all halvledarekristallen blott Or utsatt for en ran statisk elektrisk faltverkan. Vidare kan man i stallet for en kapacitetskoppling, alltefter frekvensomradet, f Sr ingangen och/ eller trtgangen anordna andra, exempelvis induktiva, kopplingar eller kopplingar Over likriktande element, i synnerhet p-n-overgangar. Exempelvis kan halvledarekroppen sjalv hell eller delvis vara verksam som ledare for oscillationerna och svangningarna, sarskilt i analogi med en lecherledning, varvid den Sr utbildad som ihalig kropp (cylindrisk, sfarisk, iiggformig osv.). HarVid kan den sta i vaxelverkan med- ett elektromagnetiskt f Sit inifran eller utifran. Den kan Sven vara inbyggd son] del i en metallisk ledning eller Vara anordnad koaxiellt 1 forhallande till en sadan, varvid — — eventuellt flera halvledarekroppar med olika avstamning — eventuellt under inkoppling av en metallisk eller kvasimetallisk del (urartade halvledare) — kunna vara forbundna med varandra. The exemplary embodiments can also be modified in such a way that the spar-free contacts. 2 and 3 are replaced by insulating or at least only one-way electrodes, so that all the semiconductor crystal is only Or subjected to a purely static electric field action. Furthermore, in the place of a capacitance coupling, depending on the frequency range, for the input and / or inlet, other, for example inductive, couplings or couplings can be arranged above rectifying elements, in particular p-n junctions. For example, the semiconductor body itself may be wholly or partly active as a conductor for the oscillations and oscillations, especially in analogy with a lecher line, whereby it is formed as a hollow body (cylindrical, spherical, igneous, etc.). HarVid can be in interaction with an electromagnetic f Sit inside or outside. It can be a built-in part of a metallic wire or be arranged coaxially in relation to such, whereby - - possibly several semiconductor bodies with different descent - possibly during connection of a metallic or quasi-metallic part (degenerate semiconductors) - can be connected to each other.

Enligt en ytterligare utveckling av uppfinningsiden ãr det mojligt att anordna flera ingãngar for olika frekvenser resp. frekvensspektra och/eller flera utgangar ftir uttagande av olika svangningsfrekvenser. According to a further development of the inventive side, it is possible to arrange several inputs for different frequencies resp. frequency spectra and / or several outputs for sampling different oscillation frequencies.

Fig. 4 visar ett sadant utforingsexempel i sehematisk framstallning. Fig. 4 shows such an embodiment in sehematic representation.

Tva skilda, ihaliga ledare 11 och 12 Oro till- ordnade halvledarekristallen 1, i vilken genora godtyekliga medel astadkommes en driftverkan ph majoritetsbararna i pilens x riktning och pa minoritetsbararna eventuellt i motsatt riktning, medelst vilka ledare 11, 12 tvä exciteringar med olika frekvens resp. olika frekvensmaximura If och 12 kunna inledas i halvledarekristallen. De hada frekNenserna ft och f2 Oro sà valda, att deras summa och/eller differens fir avstamd till plasmaegenfrekvensen resp. olika plasmaegenfrekvenser. Den ur det exciterade plasmatillstandet resulterande frekvensen f' kan cla med eller utan aterkoppling uttagas (ausgekoppelt) pa ett eller fiera ytterligare sullen av halvledarekristallen. Eventuellt kunna aven flera utgangsfrekvenser uttagas antingen pa olika stallen av halvledarekristallen eller after varandra pa samma stalle — fordrOjda genom driftverkan — orn, sasom inledningsvis namnts, olika plasmatillstandsstorheter aro exciterade till olika plasmarorelser. Om t. ex. elektroner och defektelektroner finnas i olika koneentration av jamforbar storleksordning, sa svanga de bada laddningsbararekollcktiven mcd olika frekvenser, som antingen separat eller gemensamt kunna uttagas som kopplingssvangning eller valvis efter varandra resp. omvaxlande. Sadana olika utgangssvangningstillstand kunna aven astadkommas genom lampligt val av de ovriga gransvillkoren eller ocksâ genom lid-visa forandringar av gransvillkoren, exempelvis barareinjektioner eller ytfOrandringar. I stallet for eller jamte en utgangsfrekvens kan aven ett eller flera elektriska resp. elektromagnetiska avklingningstillstand med onskat resp. onskade dekrement astadkommas, vilka behovas for styrning av tidsorgan eller andra meddelande-forlopp. -Allmant kan sagas, att jamte oseillationer aven aperiodiska proeesser betraffande plasmastorheterna innefattas. Two separate, solid conductors 11 and 12 Aro assigned the semiconductor crystal 1, in which genero arbitrary means an operating effect is achieved ph the majority bars in the x direction of the arrow and on the minority bars possibly in the opposite direction, by means of which conductors 11, 12 two excitations with different frequency resp. different frequency maxima If and 12 can be initiated in the semiconductor crystal. They had the frequencies ft and f2 Oro so chosen that their sum and / or difference fir was derived to the plasma natural frequency resp. different plasma natural frequencies. The frequency f 'resulting from the excited plasma state can cla with or without reconnection be taken out (ausgekoppelt) on one or more of the semen of the semiconductor crystal. It is also possible for several output frequencies to be taken either at different locations of the semiconductor crystal or successively at the same location - required by operating effects - as initially mentioned, different plasma state quantities are excited to different plasma motions. If e.g. electrons and defective electrons are in different concentrations of comparable magnitude, so the two charge-bar collectors mcd different frequencies, which can either be taken separately or jointly as coupling oscillation or selectively one after the other resp. alternating. Such different initial oscillation conditions can also be achieved by appropriate choice of the other spruce conditions or also by slight changes in the spruce conditions, for example barre injections or surface changes. Instead of or equal to an output frequency, one or more electrical resp. electromagnetic decay condition with desired resp. desired decrements are provided, which are needed for controlling timing means or other message processes. In general, it can be said that as well as oscillations of aperiodic processes concerning the plasma quantities are included.

Enligt en vidare utveckling av uppfinningsHien kunna genom lampliga reflexioner staende svangningar astadkomnms i halvledarekristallen — foretradesvis vid oscillatorkoppling eller for filterandamal. Dessa staende svangningar kunna ha samma frekvens resp. frekvenser som plasmasvangningarna sjalva, men det kan aven vara fraga om reflexioner av de genom driftverkan i halvledarekristallen transporterade svangningstillstanden vid halv ledarekristallens andar. I detta fall komma plasmaegensvangningarna att som ett slags vagpaket reflekteras fram och tillbaka i halvledarekristallen med en genom driftverkan betingad, langt mindre frekvens. Reflexionerna kunna aga rum direkt vid kristallens yta eller i med denim kopplade resonanskretsar, I stallet for ytorna kunna aven i kristallen inlagrade sparrskikt eller overgangar mellan zoner med olika dotering eller andra strukturandringar, foretradesvis struktursprang, ifragakomma. According to a further development of the invention, standing oscillations can be achieved in the semiconductor crystal by suitable reflections - preferably by oscillator connection or for filter ends. These standing oscillations can have the same frequency resp. frequencies such as the plasma oscillations themselves, but it can also be a question of reflections of the state of oscillation transported by the action of the semiconductor crystal at the spirits of the semiconductor crystal. In this case, the plasma natural oscillations will be reflected back and forth in the semiconductor crystal as a kind of vagal packet with a far smaller frequency due to the operating effect. The reflections can take place directly at the surface of the crystal or in denim-coupled resonant circuits. Instead of the surfaces, chalk layers or transitions between zones with different doping or other structural changes, preferably structural leaps, can also be used in the crystal.

Enligt annu en utveckling av uppfinningsiden ãr halvledarekristallen pa sadant satt uppdelad i flera zoner med olika dotering, sarskilt olika ledningstyp och/eller olika laddningsbararetathet, exempelvis i p-, n-, svagare eller mindre doterade zoner. Zonerna kunna aven besta av olika halvledare, sarskilt legeringar, med olika bandbredd och/eller barare-rorlighet. De kunna kontinuerligt over-gã i varandra eller gransa till varandra i sprangvisa overgangar. Om den i en av zonerna alstrade svangningen medelst driftverkan helt eller delvis transporteras till en eller flera andra zoner, sâ uppsta i de angransande zonerna med olika dotering olika svangningstillstand vid lamplig avpassning av det omsesidiga forhallandet mellan de i dessa zoner resulterande plasmaegensvangningarna. Om gransvillkoren aro sa valda, att plasmaegensvangningarna i de olika zonerna sta.' i rationellt, foretradesvis heltaligt forhallande till varandra, ãr anordningen anvandbar som frekvensdelare resp. frekvensmangfaldigare. De enskilda svingningstillstanden resp. frekvenserna kunna genom lamplig formgivning av halvledaren eller dess yta paverkas och ledas vidare resp. uttagas. I synnerhet kan halvledarekristallen pa olika stallen resp. i de olika zonerna ha kontinuerligt eller stegvis foranderliga tvarsnitt och/eller vara utformad krOkt, exempelvis cirkelformig. Vid korsformig eller sasona en »forgreninp formad halv- ledarekristall kunna flera driftkanalersom kunna excitera separat — vara anordnade, vilka aro inkopplade i de olika andarna av halvledarekristallen. According to another development of the inventive side, the semiconductor crystal is thus divided into several zones with different doping, in particular different lead types and / or different charge bar ratios, for example in p-, n-, weaker or less doped zones. The zones can also consist of different semiconductors, especially alloys, with different bandwidth and / or barer mobility. They can continuously merge into each other or scrutinize each other in leap-wise transitions. If the oscillation generated in one of the zones by transport is wholly or partly transported to one or more other zones, then different oscillation conditions arise in the adjacent zones with different doping by suitable adjustment of the mutual ratio between the plasma natural oscillations resulting in these zones. If the spruce conditions are so chosen that the plasma natural fluctuations in the different zones stand. ' in a rational, preferably integral relation to each other, is the device usable as a frequency divider resp. more diverse. The individual oscillation states resp. the frequencies can be affected and further conducted by suitable design of the semiconductor or its surface, resp. taken out. In particular, the semiconductor crystal in different places resp. in the different zones have continuously or gradually changing cross-sections and / or be formed curved, for example circular. In the case of a cross-shaped or sasona a semiconductor-shaped semiconductor crystal, several operating channels which can excite separately can be arranged, which are connected in the different spirits of the semiconductor crystal.

Enligt en vidare utveckling av uppfinningsidea astadkommas plasmasvangningarna antingen som fria och/eller tvungna svangning- ar — eller onivaxlande — med eller utan drift- verkan i en eller flera aktiva zoner i en av de kanda halvledareanordningarna, exempel- vis i basen och/eller i injektorn resp. kollek- torn hos en transistor- eller unipolartransistoranordning i och for paverkande, sarskilt styrning av fOrstarkarna och/eller for paver- kande av kopplingsegenskaper hos halvledareanordningen. Denna halvledareanordning kan iven vara utbildad i f8rening med en multipel has som tradkonstruktionselement (traddiod, tradtransistor, aven multipelhalroranordning). According to a further development of the inventive idea, the plasma oscillations are effected either as free and / or forced oscillations - or non-alternating - with or without operation in one or more active zones in one of the known semiconductor devices, for example in the base and / or in the injector resp. the collector of a transistor or unipolar transistor device in order to actuate, in particular control of the amplifiers and / or to actuate the coupling properties of the semiconductor device. This semiconductor device can also be formed in conjunction with a multiple has as a wire construction element (wire diode, wire transistor, also multiple halo device).

— — I fig. 5 visas schematiskt sasom exempel en p-n-p-transistor med basen. 14, injek.torn 15 och kollektorn -16. Basens andar 17 och 18 tillforas medelst sparrfria kontakter en elektrisk likspanning, medelst vilken en vid halriiret 19 inledd excitering transporteras till omradet melan injektorn och kollektorn. Fig. 5 schematically shows, as an example, a p-n-p transistor with the base. 14, injection tower 15 and collector -16. The spirits 17 and 18 of the base are supplied by means of ratchet-free contacts with an electric direct voltage, by means of which an excitation initiated at the hall 19 is transported to the area between the injector and the collector.

Genom de vid 19 tillforda sign.alerna styres transistorns vipp- och/eller forstarkarmekanism. Pa motsvarande salt kunna aven Hookzonerna i p-n-p-n- eller p-n-i-p-halvledareanordningar och liknande paverkas. Through the signals supplied at 19, the flip-flop and / or amplifier mechanism of the transistor is controlled. At the corresponding salt, the hook zones in p-n-p-n or p-n-i-p semiconductor devices and the like can also be affected.

En ytterligare utveckling av uppfinningsiden bestar i att flera av de ovan beskrivna resp. schematiskt visade halvledareanordningarna med olika randvillkor, exempelvis olika geometriska langder och/eller olika halvledarematerial osv. aro kombinerade med varandra till en sats, av vilka eventuellt avenledes flera kunna fOrenas med varandra till en rasterliknande anordning, sa att signaler eller rneddelanden enligt rad- och kolumnsystemet eller nagot annat avkanningssystem kunna hordelas pa de enskilda halvledarekristallerna. TillfOrandet av stromanslutningar och/eller barare-injektioner kan eventuellt ske genom langs halvledarekristallens yta rorliga elektronstritlar. A further development of the inventive side consists in that several of the above-described resp. schematically shown the semiconductor devices with different boundary conditions, for example different geometric lengths and / or different semiconductor materials, etc. are combined with each other into a set, several of which may be joined together to form a raster-like device, so that signals or divisions according to the row and column system or some other sensing system can be judged on the individual semiconductor crystals. The supply of current connections and / or barer injections can possibly take place through electron beams moving along the surface of the semiconductor crystal.

Vid anvandning av halvledare, vid vilka de optiska egenskaperna vasentligen aro bestamda genom de fria laddningsbararna, sa att alltsa plasmaegenfrekvensen kommer in i del ultraroda frekvensomradet, ersattas de beskrivna elektromagnetiska medlen fer in- och utkoppling av svangningstillstanden resin for styrning av desamma med kanda optiska varigenom morker-ljus-styrningar och -fOrstarkningar mojliggoras. When using semiconductors, in which the optical properties are essentially determined by the free charge bars, so that the plasma natural frequency enters the ultra-red frequency range, the described electromagnetic means are replaced by switching on and off the state of oscillation resin for controlling the same optical beams. darker-light controls and reinforcements are made possible.

Sasorn halvledare ifragakornma framfOr alit sadana med extremt h8ga laddningsbararerOrligheter, sasom i synnerhet genom AmBv-, och AlW"-foreningar samt multipla foreningar darav och aven i flusspat- eller antiflusspatgitter kristalliserande halvledare. The semiconductor semiconductors in question are always those with extremely high charge-barriers, such as in particular through AmBv and AlW "compounds as well as multiple compounds thereof and also crystallizing semiconductors in fluorescent or anti-fluorescent gratings.

I ovrigt är foreningen icke begransad till de vanligen for transistorer anvanda materialen, utan aven fly tande halvledare eller elektrolyter eller organiska halvledare ifragakomma f8r forverkligande av uppfinningsiden. In other respects, the association is not limited to the materials commonly used for transistors, but also liquid semiconductors or electrolytes or organic semiconductors are required for the realization of the invention.

For utnyttjande av de rnagnetiska effekter- na 110S det svangande plasmat i halvledare, exempelvis for styrning av Halleffekten och dess tiiliiinpningar, modifieras pa lampligt salt de ovan angivna synpunkterna. Sasom oilman konstruktionsregel dr att beakta, att vid sjalvexcitering am svangningarna genom Mott driftverkan drifthastigheten maste vara stone an den termiska medelhastigheten hos laddningsbftarna resp. majoritetsbararna. Darvid ãr den termiska medelhastigheten vid rumstemperatur av storleksordningen -' cinsek-1. Genom anvandning av lampliga temperaturer kan astadkommandet av svangningarna inom onskade ornraden underlattas. For- loppen aro majliga saval Mom. storledningssom Mom egenledningsomradet, varvid de.enskilda atgarderna modifieras i enlighet med de i inledningen utvecklade grundideerna. Vid excitering av plasmasvangningarna genom impulsverkan erhaller man goda resultat om impulsvaraktigheten ar av storleksordningen -12 sek. Vid anvandning av en frekvensblandning kan man exempelvis kombinera tva energispektra med varandra, av vilka dot ena har en varaktighet av -12 sek och det andra en varaktighet av -6 sek. In order to utilize the magnetic effects 110S the oscillating plasma in semiconductors, for example for controlling the Hall effect and its apertures, the points of view stated above are modified on a suitable salt. As an oilman design rule, it should be borne in mind that when self-exciting the oscillations through the opposite operating force, the operating speed must be equal to the thermal average speed of the charging beams resp. the majority bars. In this case, the average thermal velocity at room temperature is of the order of - 'cinsec-1. By using suitable temperatures, the oscillations within the desired row of rows can be facilitated. For- loppen aro majliga saval Mom. grand management as the Mom self-management area, whereby the individual activities are modified in accordance with the basic ideas developed in the introduction. When excitation of the plasma oscillations by impulse action, good results are obtained if the impulse duration is of the order of -12 sec. When using a frequency mixture, it is possible, for example, to combine two energy spectra with each other, of which one has a duration of -12 sec and the other a duration of -6 sec.

Claims

Patent claim:

Device for generating plasma oscillations in electronic hate conductors, preferably semiconductor single crystals, can be drawn, of a semiconductor material used, which, with respect to its material properties, its geometric shape and its temperature distribution, is selected in such a way that at a. extra impact of an external, time-varying electric field, e.g. in the form of a short-lived square pulse of sufficient strength, the plasma in the semiconductor crystal is imparted with its own oscillations, and means are arranged to impart a drift motion to the plasma oscillations in the semiconductor crystal, the oscillations produced by plasma oscillations in the plasma. -

Device according to patent claim 1, Unsubscribed drive, that systems (6, 7), which can come into resonance, are arranged for disengaging the plasma oscillations.

Device according to patent claims 1 and 2, characterized in that for switching off the oscillations at least one oscillation circuit (7) is provided, which is adjacent to the plasma natural frequency.

Device according to any one of claims 1-3, characterized in that for short-term oscillation excitation there is an electrode device (8), which is possibly derived from one or more flora frequencies or a frequency band.

Device according to any one of patent claims 1-4, characterized in that said resonant system (6, 7) for switching on and / or switching on the oscillations is capacitively (4, 5) connected to the semiconductor crystal (1).

Device according to any of the patent claims. 1-5, characterized in that the connection and / or disconnection electrodes are formed as hollow conductors (8, 9), which enclose the semiconductor crystal (1).

7. Device according to any one of claims 1 - 5, characterized in that the resonant systems (6, 7) for connecting and / or disconnecting the oscillations are connected to the semiconductor crystal (1) over at least in one direction sparring electrodes (15, 16), for example pn junctions.

8. A device according to any one of patent claims 1-7, characterized in that it is arranged to maintain, from time to time or permanently, an electric field in the semiconductor crystal in order to achieve the operating effect.

Device according to any one of patent claims 1-8, characterized in that it is arranged to maintain a temperature gradient in the semiconductor crystal from time to time in order to achieve the operating effect.

10. Device according to any one of patent claims 1-9, characterized in that the operating effect is adapted to the plasma natural frequency and to the distance between the switch-on and switch-off location.

11. A device according to any one of claims 1-10, characterized in that for short-term oscillation excitation a sufficiently strong electric field is used to effect an acceleration of the charge bars to a speed which is greater than the average speed due to the heat movement of the charge bars.

12. A device according to claim 11, characterized in that electrodes arranged on the surface of the semiconductor crystal are generated for generating a strong electric field, the field strength of which is tail below or above the Zener voltage and / or causes stogonization.

Device according to claim 11 or 12, characterized in that a heating and / or cooling device is provided for generating a short-acting, high-temperature gradient.

14. Device according to any one of patent claims 1-13, characterized in that atinin oil an input circuit and an output circuit are connected inboard.

Device according to any one of patent claims 1-14, characterized in that at least one emitter electrode is arranged on the surface of the semiconductor crystal in and for injection of charge hares and thereby conditional control, possibly modulating the air plasma oscillations. Device according to patent claim 15, characterized in that at least one collector electrode is associated with at least one emitter electrode.

Device according to any one of claims 1-16, characterized in that the semiconductor crystal Or is divided into several zones with different doping, in particular different lead type and / or different charge bar readiness, for example with alternating p-, n- and i-doping.

17. Device according to claim 17, characterized by such an adaptation of the inhomogeneity zones that the plasma natural oscillations in the different zones are in a rational, preferably integral relation to each other, so that a frequency division resp. frequency multiplication occurs.

Device according to any one of claims 1-18, characterized in that the semiconductor body has a shape deviating from a cylindrical shape, for example a cross shape or a branch shape, and possibly at least partially shaped.

Device according to any one of patent claims 1-19, characterized therefrom, the semiconductor body having a halo shape and possibly wholly or partly forming part of another material, preferably metal, consisting of halo wire with or without coaxial conductor.

Device according to any one of claims 1-20, characterized in that at least a part of the semiconductor body, in which plasma oscillations are generated, forms the active sum of a per se semiconductor device, for example the base and / or the injector resp. the collector has a transistor or unipolar transistor device.

21. A device according to any one of claims 1-21, characterized in that the semiconductor material is a semiconductor with extremely high charge carrier mobility, for example consisting of an A "'13v, An., -' 11 and AT 'or its multiple compounds resp. Associations with elements of the guard group in the part periodislia system Request publications: U.S. Patent Nos. 2,725,474.