SE0003360D0 - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
SE0003360D0
SE0003360D0 SE0003360A SE0003360A SE0003360D0 SE 0003360 D0 SE0003360 D0 SE 0003360D0 SE 0003360 A SE0003360 A SE 0003360A SE 0003360 A SE0003360 A SE 0003360A SE 0003360 D0 SE0003360 D0 SE 0003360D0
Authority
SE
Sweden
Prior art keywords
active part
semiconductor device
grading
electric field
high voltage
Prior art date
Application number
SE0003360A
Other languages
Swedish (sv)
Inventor
Hans Bernhoff
Mats Dahlund
Mark Irwin
Jan Isberg
Peter Isberg
Eva Maartensson
Per Skytt
Carina Oenneby
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE0003360A priority Critical patent/SE0003360D0/en
Publication of SE0003360D0 publication Critical patent/SE0003360D0/en
Priority to AU2001288157A priority patent/AU2001288157A1/en
Priority to PCT/SE2001/001953 priority patent/WO2002025736A1/en

Links

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Die Bonding (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

A semiconductor device comprises means (7) for grading an electric field created in the active part (4) of the device when a high voltage is applied thereacross. Said means comprises a member (7) being of a material having a higher dielectric constant than the material of said active part and applied next to at least a portion of said active part where a high electric field occurs when a high voltage is applied across the device for obtaining a field grading for a condition of changing of said voltage.
SE0003360A 2000-09-21 2000-09-21 A semiconductor device SE0003360D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE0003360A SE0003360D0 (en) 2000-09-21 2000-09-21 A semiconductor device
AU2001288157A AU2001288157A1 (en) 2000-09-21 2001-09-13 A high voltage semiconductor
PCT/SE2001/001953 WO2002025736A1 (en) 2000-09-21 2001-09-13 A high voltage semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0003360A SE0003360D0 (en) 2000-09-21 2000-09-21 A semiconductor device

Publications (1)

Publication Number Publication Date
SE0003360D0 true SE0003360D0 (en) 2000-09-21

Family

ID=20281094

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0003360A SE0003360D0 (en) 2000-09-21 2000-09-21 A semiconductor device

Country Status (3)

Country Link
AU (1) AU2001288157A1 (en)
SE (1) SE0003360D0 (en)
WO (1) WO2002025736A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890150A (en) * 1985-12-05 1989-12-26 North American Philips Corporation Dielectric passivation
EP0343797A1 (en) * 1988-05-25 1989-11-29 Powerex, Inc. Field grading extension for enhancement of blocking voltage capability of high voltage thyristor
EP0519741B1 (en) * 1991-06-21 1997-05-02 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor element
JP2002522904A (en) * 1998-08-05 2002-07-23 インフィネオン テクノロジース アクチエンゲゼルシャフト Substrate for high voltage module
JP3180776B2 (en) * 1998-09-22 2001-06-25 日本電気株式会社 Field-effect transistor

Also Published As

Publication number Publication date
WO2002025736A1 (en) 2002-03-28
AU2001288157A1 (en) 2002-04-02

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