RU97114156A - METHOD FOR PRODUCING HOLOGRAMS ON SILICON - Google Patents

METHOD FOR PRODUCING HOLOGRAMS ON SILICON

Info

Publication number
RU97114156A
RU97114156A RU97114156/25A RU97114156A RU97114156A RU 97114156 A RU97114156 A RU 97114156A RU 97114156/25 A RU97114156/25 A RU 97114156/25A RU 97114156 A RU97114156 A RU 97114156A RU 97114156 A RU97114156 A RU 97114156A
Authority
RU
Russia
Prior art keywords
silicon
producing holograms
recording
interference pattern
sample
Prior art date
Application number
RU97114156/25A
Other languages
Russian (ru)
Other versions
RU2120653C1 (en
Inventor
Я.В. Фаттахов
М.Ф. Галяутдинов
Т.Н. Львова
И.Б. Хайбуллин
Original Assignee
Казанский физико-технический институт Казанского научного центра РАН
Filing date
Publication date
Application filed by Казанский физико-технический институт Казанского научного центра РАН filed Critical Казанский физико-технический институт Казанского научного центра РАН
Priority to RU97114156/25A priority Critical patent/RU2120653C1/en
Priority claimed from RU97114156/25A external-priority patent/RU2120653C1/en
Application granted granted Critical
Publication of RU2120653C1 publication Critical patent/RU2120653C1/en
Publication of RU97114156A publication Critical patent/RU97114156A/en

Links

Claims (1)

Способ получения голограмм на кремнии, заключающийся в создании методом ионной имплантации аморфизованного слоя на поверхности образца и записи интерференционной картины от объектного и опорного пучков когерентного излучения наносекундного диапазона длительности с длиной волны в полосе поглощения аморфного полупроводника, отличающийся тем, что после записи интерференционной картины образец дополнительно облучают импульсом некогерентного света длительностью в интервале 0,05-4 с и плотностью мощности 3400-70 Вт/см2.A method of producing holograms on silicon, which consists in creating an amorphized layer on the sample surface by ion implantation and recording an interference pattern from the object and reference beams of a coherent radiation of nanosecond wavelength range in the absorption band of an amorphous semiconductor, characterized in that, after recording the interference pattern, the sample is additionally irradiated with an incoherent light pulse with a duration in the range of 0.05-4 s and a power density of 3400-70 W / cm 2 .
RU97114156/25A 1997-08-19 1997-08-19 Process of generation of hologram on silicon RU2120653C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU97114156/25A RU2120653C1 (en) 1997-08-19 1997-08-19 Process of generation of hologram on silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU97114156/25A RU2120653C1 (en) 1997-08-19 1997-08-19 Process of generation of hologram on silicon

Publications (2)

Publication Number Publication Date
RU2120653C1 RU2120653C1 (en) 1998-10-20
RU97114156A true RU97114156A (en) 1999-02-10

Family

ID=20196467

Family Applications (1)

Application Number Title Priority Date Filing Date
RU97114156/25A RU2120653C1 (en) 1997-08-19 1997-08-19 Process of generation of hologram on silicon

Country Status (1)

Country Link
RU (1) RU2120653C1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2566371C1 (en) * 2014-07-30 2015-10-27 Федеральное государственное бюджетное учреждение науки Казанский физико-технический институт им. Е.К. Завойского Казанского научного центра Российской Академии наук (КФТИ КазНЦ РАН) Method of making polymer-based diffraction grating
RU2561197C1 (en) * 2014-07-30 2015-08-27 Федеральное государственное бюджетное учреждение науки Казанский физико-технический институт им. Е.К. Завойского Казанского научного центра Российской Академии наук (КФТИ КазНЦ РАН) Polymer based diffraction grating
RU2659702C2 (en) * 2016-06-03 2018-07-03 Федеральное государственное бюджетное учреждение науки "Федеральный исследовательский центр "Казанский научный центр Российской академии наук" Method of manufacturing diamond diffraction lattice

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