RU96107470A - MAGNETO-OPTIC THIN FILM STRUCTURE - Google Patents

MAGNETO-OPTIC THIN FILM STRUCTURE

Info

Publication number
RU96107470A
RU96107470A RU96107470/25A RU96107470A RU96107470A RU 96107470 A RU96107470 A RU 96107470A RU 96107470/25 A RU96107470/25 A RU 96107470/25A RU 96107470 A RU96107470 A RU 96107470A RU 96107470 A RU96107470 A RU 96107470A
Authority
RU
Russia
Prior art keywords
substrate
film
garnet
crystallographic axis
plane
Prior art date
Application number
RU96107470/25A
Other languages
Russian (ru)
Other versions
RU2138069C1 (en
Inventor
Е.И. Ильяшенко
В.П. Клин
А.Г. Соловьев
Original Assignee
Фирма "Гарнетек Лтд."
Filing date
Publication date
Application filed by Фирма "Гарнетек Лтд." filed Critical Фирма "Гарнетек Лтд."
Priority to RU96107470A priority Critical patent/RU2138069C1/en
Priority claimed from RU96107470A external-priority patent/RU2138069C1/en
Priority to US08/842,286 priority patent/US6143435A/en
Publication of RU96107470A publication Critical patent/RU96107470A/en
Priority to US09/397,622 priority patent/US6288980B1/en
Application granted granted Critical
Publication of RU2138069C1 publication Critical patent/RU2138069C1/en

Links

Claims (4)

1. Магнитооптическая тонкопленочная структура, содержащая подложку из диэлектрического материала со структурой граната, на которую нанесена пленка магнитного материала с вектором намагниченности, лежащим в плоскости пленки, причем в качестве магнитного материала пленки выбран висмутсодержащий галлиевый феррит-гранат, отличающаяся тем, что подложка выполнена из монокристалла гадолиний-галлиевого граната, кристаллографическая ось [100] которого смещена относительно перпендикуляра к плоскости подложки со стороны упомянутой пленки магнитного материала на угол А, не превышающий величины отклонения до кристаллографической оси [210], при этом висмутсодержащий галлиевый феррит-гранат допирован редкоземельными элементами.1. Magneto-optical thin-film structure containing a substrate of a dielectric material with a garnet structure, on which a film of a magnetic material with a magnetization vector lying in the plane of the film is applied, moreover, bismuth-containing gallium ferrite garnet is selected as the magnetic material of the film, characterized in that the substrate is made of single crystal of gadolinium-gallium garnet, the crystallographic axis [100] of which is shifted relative to the perpendicular to the plane of the substrate from the side of the mentioned film of the total material at an angle A not exceeding the deviation to the crystallographic axis [210], while bismuth-containing gallium ferrite garnet is doped with rare-earth elements. 2. Структура по п. 1, отличающаяся тем, что угол А между кристаллографической осью [100] монокристаллической подложки и перпендикуляром к плоскости подложки, отсчитываемый от упомянутого перпендикуляра в направлении к кристаллографической оси [210] монокристалла подложки, выбран в пределах 0o < А ≤ 4o.2. The structure according to claim 1, characterized in that the angle A between the crystallographic axis [100] of the single crystal substrate and the perpendicular to the plane of the substrate, counted from the perpendicular in the direction to the crystallographic axis [210] of the substrate single crystal, is selected in the range 0 o <A ≤ 4 o . 3. Структура по п. 1 или 2, отличающаяся тем, что в качестве допирующих редкоземельных элементов выбраны элементы из группы, состоящей из туллия, лютеция, гадолиния в отдельности и их комбинаций. 3. The structure according to p. 1 or 2, characterized in that as doping rare earth elements selected elements from the group consisting of tollium, lutetium, gadolinium separately and their combinations. 4. Структура по п. 1, или 2, или 3, отличающаяся тем, что магнитный материал пленки содержит от 0,8 до 0,85 ионов висмута и от 1,1 до 1,15 ионов галлия на одну формульную единицу кристаллической структуры упомянутого материала. 4. The structure according to p. 1, or 2, or 3, characterized in that the magnetic material of the film contains from 0.8 to 0.85 bismuth ions and from 1.1 to 1.15 gallium ions per one formula unit of the crystal structure of said material.
RU96107470A 1996-04-23 1996-04-23 Magnetooptical thin-film structure RU2138069C1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
RU96107470A RU2138069C1 (en) 1996-04-23 1996-04-23 Magnetooptical thin-film structure
US08/842,286 US6143435A (en) 1996-04-23 1997-04-23 Magneto-optical thin-layer structure
US09/397,622 US6288980B1 (en) 1996-04-23 1999-09-16 Magneto-optical head for information reading

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU96107470A RU2138069C1 (en) 1996-04-23 1996-04-23 Magnetooptical thin-film structure

Publications (2)

Publication Number Publication Date
RU96107470A true RU96107470A (en) 1998-09-27
RU2138069C1 RU2138069C1 (en) 1999-09-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU96107470A RU2138069C1 (en) 1996-04-23 1996-04-23 Magnetooptical thin-film structure

Country Status (2)

Country Link
US (1) US6143435A (en)
RU (1) RU2138069C1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003054605A1 (en) * 2001-12-11 2003-07-03 Lake Shore Cryotronics, Inc. Magneto-optical sensing employing phase-shifted transmission bragg gratings
JP3979138B2 (en) * 2001-12-20 2007-09-19 住友電気工業株式会社 Optical isolator and polarizer
US7254286B2 (en) 2002-12-11 2007-08-07 Lake Shore Cryotronics, Inc. Magneto-optical resonant waveguide sensors
JP4717950B2 (en) * 2009-03-16 2011-07-06 Ｊｆｅミネラル株式会社 Compositionally graded ferrite material for magneto-optical effect property measurement and ferrite property evaluation method
DE102011052217B4 (en) 2011-07-27 2019-08-08 Helmholtz-Zentrum Dresden - Rossendorf E.V. Method for determining the wavelength-dependent magneto-optical coupling constant of a layer to be characterized in a layer system with one or more magnetizable layers
RU2692047C1 (en) * 2018-02-14 2019-06-19 Акционерное общество "Научно-исследовательский институт материаловедения им. А.Ю. Малинина" Magnetooptical element and reading device with such element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4625390A (en) * 1983-03-16 1986-12-02 Litton Systems, Inc. Two-step method of manufacturing compressed bismuth-containing garnet films of replicable low anisotropy field value
DE3607346A1 (en) * 1986-03-06 1987-09-10 Philips Patentverwaltung MAGNETO-OPTICAL LIGHT SWITCHING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
JPH0768048B2 (en) * 1986-07-31 1995-07-26 株式会社トーキン Magneto-optical net
JPH05333124A (en) * 1992-06-03 1993-12-17 Mitsubishi Gas Chem Co Inc Reflection type photomagnetic field sensor head
JPH0769797A (en) * 1993-08-27 1995-03-14 Mitsubishi Gas Chem Co Inc Bismuth-substituted iron garnet single crystal formed in low saturated magnetic field
US5473466A (en) * 1994-06-02 1995-12-05 Tanielian; Aram A. Magneto-optical display and method of forming such display

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