RU94025911A - Magnetoresistive storage element - Google Patents

Magnetoresistive storage element

Info

Publication number
RU94025911A
RU94025911A RU94025911/25A RU94025911A RU94025911A RU 94025911 A RU94025911 A RU 94025911A RU 94025911/25 A RU94025911/25 A RU 94025911/25A RU 94025911 A RU94025911 A RU 94025911A RU 94025911 A RU94025911 A RU 94025911A
Authority
RU
Russia
Prior art keywords
layer
magnetic anisotropy
strip
insulating layer
layer strip
Prior art date
Application number
RU94025911/25A
Other languages
Russian (ru)
Other versions
RU2066484C1 (en
Inventor
Н.П. Васильева
С.И. Касаткин
А.М. Муравьев
Original Assignee
Институт проблем управления РАН
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт проблем управления РАН filed Critical Институт проблем управления РАН
Priority to RU94025911A priority Critical patent/RU2066484C1/en
Application granted granted Critical
Publication of RU2066484C1 publication Critical patent/RU2066484C1/en
Publication of RU94025911A publication Critical patent/RU94025911A/en

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  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

FIELD: computer engineering; random-access storage devices. SUBSTANCE: storage element is provided with two low-resistance conductors, such as copper ones, arranged, respectively between three-layer strip and first protective layer and between three-layer strip and second insulating layer, and separated at section free from three-layer strip; it also has third insulating layer; thin-film magnetoresistive layers have different magnetic anisotropy field intensities; ratio of high-intensity magnetic anisotropy field to low-intensity one is at least 4. EFFECT: enlarged functional capabilities and facilitated manufacture. 3 dwg

Claims (1)

Изобретение относится к вычислительной технике, в частности к магнитным запоминающим устройствам с произвольной выборкой информации. Целью предлагаемого изобретения является расширение функциональных возможностей и упрощение технологии изготовления элемента. Поставленная цель достигается тем, что запоминающий элемент снабжен двумя низкорезистивными проводниками, например из меди, расположенными соответственно между трехслойной полоской и первым защитным слоем и трехслойной полоской и вторым изолирующим слоем и разделенными между собой на участке, свободном от трехслойной полоски, третьим изолирующим слоем, причем тонкопленочные магниторезистивные слои имеют разные величины поля магнитной анизотропии и отношение большего поля магнитной анизотропии к меньшему составляет не менее четырех.The invention relates to computer technology, in particular to magnetic storage devices with an arbitrary selection of information. The aim of the invention is to expand the functionality and simplify the manufacturing technology of the element. This goal is achieved by the fact that the storage element is equipped with two low-resistive conductors, for example of copper, located respectively between the three-layer strip and the first protective layer and the three-layer strip and the second insulating layer and separated by a third insulating layer in an area free of the three-layer strip, and thin-film magnetoresistive layers have different values of the magnetic anisotropy field and the ratio of the larger magnetic anisotropy field to the smaller is at least four x
RU94025911A 1994-07-12 1994-07-12 Memory gate using spin-transition magnetoresistive effect RU2066484C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU94025911A RU2066484C1 (en) 1994-07-12 1994-07-12 Memory gate using spin-transition magnetoresistive effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU94025911A RU2066484C1 (en) 1994-07-12 1994-07-12 Memory gate using spin-transition magnetoresistive effect

Publications (2)

Publication Number Publication Date
RU2066484C1 RU2066484C1 (en) 1996-09-10
RU94025911A true RU94025911A (en) 1997-05-20

Family

ID=20158360

Family Applications (1)

Application Number Title Priority Date Filing Date
RU94025911A RU2066484C1 (en) 1994-07-12 1994-07-12 Memory gate using spin-transition magnetoresistive effect

Country Status (1)

Country Link
RU (1) RU2066484C1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2963152B1 (en) * 2010-07-26 2013-03-29 Centre Nat Rech Scient MEMORY MEMORY MEMORY

Also Published As

Publication number Publication date
RU2066484C1 (en) 1996-09-10

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