RU94025911A - Magnetoresistive storage element - Google Patents
Magnetoresistive storage elementInfo
- Publication number
- RU94025911A RU94025911A RU94025911/25A RU94025911A RU94025911A RU 94025911 A RU94025911 A RU 94025911A RU 94025911/25 A RU94025911/25 A RU 94025911/25A RU 94025911 A RU94025911 A RU 94025911A RU 94025911 A RU94025911 A RU 94025911A
- Authority
- RU
- Russia
- Prior art keywords
- layer
- magnetic anisotropy
- strip
- insulating layer
- layer strip
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
FIELD: computer engineering; random-access storage devices. SUBSTANCE: storage element is provided with two low-resistance conductors, such as copper ones, arranged, respectively between three-layer strip and first protective layer and between three-layer strip and second insulating layer, and separated at section free from three-layer strip; it also has third insulating layer; thin-film magnetoresistive layers have different magnetic anisotropy field intensities; ratio of high-intensity magnetic anisotropy field to low-intensity one is at least 4. EFFECT: enlarged functional capabilities and facilitated manufacture. 3 dwg
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU94025911A RU2066484C1 (en) | 1994-07-12 | 1994-07-12 | Memory gate using spin-transition magnetoresistive effect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU94025911A RU2066484C1 (en) | 1994-07-12 | 1994-07-12 | Memory gate using spin-transition magnetoresistive effect |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2066484C1 RU2066484C1 (en) | 1996-09-10 |
RU94025911A true RU94025911A (en) | 1997-05-20 |
Family
ID=20158360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU94025911A RU2066484C1 (en) | 1994-07-12 | 1994-07-12 | Memory gate using spin-transition magnetoresistive effect |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU2066484C1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2963152B1 (en) * | 2010-07-26 | 2013-03-29 | Centre Nat Rech Scient | MEMORY MEMORY MEMORY |
-
1994
- 1994-07-12 RU RU94025911A patent/RU2066484C1/en active
Also Published As
Publication number | Publication date |
---|---|
RU2066484C1 (en) | 1996-09-10 |
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