RU92014349A - METHOD OF MANUFACTURING POLYIMIDE DIELECTRIC LAYER - Google Patents

Claims (1)

The invention relates to high-molecular compounds, specifically to a method for manufacturing a polyimide dielectric layer, and can be used in various fields of electronic engineering. The invention allows to form a non-porous coating with high adhesion to the substrate and high adhesion to it of the applied elements of electronic devices, heat and heat resistance and mechanical strength due to the manufacture of polyamide dielectric layer by coating the substrate with 4.4-diaminotriphenylamine (I) interaction product on the substrate or its mixture with at least one of the diamines of the formula H ₂ NA-NH ₂ (II), where A = meta-Ph-, Ph-Z-Ph-, where Z = -O-, para-O-Ph-O -, meta-O-Ph-O-, -O-Ph -SO ₂ -Ph-O-,

at a molar ratio of 1: 11 = (0.65 - 0.90): (0.35 - 0.10), with the dianhydride of the formula O = (CO) ₂ = Ph - X - Ph = (CO ₂ ) O (III ), where X = -CO-, a pair of -CO-ph-CO-, meta - CO-Ph-CO-, -O-Ph-CO-Ph-CO-, -SO ₂ -, -O-Ph-SO ₂ -Ph-O-, or its mixture with at least one of the dianhydrides of the formula O = (CO) ₂ = Ph - Y - Ph = (CO) ₂ = O (IV), where Y = O-, pair O -Ph-O-, meta O-Ph-O-, σ bond, or X with X ≠ Y at a molar ratio of III: IV = (0.50 - 0.90): (0.50 - 0.10). The solution is preliminarily maintained at 20–90 ^° C for 30 minutes to 5 days, and when cured, at least one organic compound selected from the group of aromatic hydrocarbons, imidazoles, derivatives of aliphatic carboxylic acids, tertiary aliphatic amines can be added to the solution; the introduction of a mixture of acetic anhydride with triethylamine, their molar ratio is (0.6 - 0.8): (0.8 - 1.8), respectively, calculated on 1.0 mol of the starting diamine. As substrates, a metal plate of a metal-electric substrate for a hybrid integrated circuit (GIS) is used, including an additionally deposited layer of metal oxide, and also (in the manufacture of interlayer insulation) a dielectric substrate with passive elements formed on it in the case of multi-level thin-film GIS or conductor elements - in the case of a multi-level thin-film switching card for a multi-chip module. The substrate with the applied layer of the solution is subjected to heat treatment with stepwise temperature rise with warming in the last stage at 350 - 400 ^o C.