RU2802723C1 - Photomultiplier with gas electronic multiplier board - Google Patents

Abstract

FIELD: electronics.

SUBSTANCE: photomultiplier tube includes a housing, including a proximal end and a distal end, an optical window located at the proximal end of the housing, an end wall plate located at the distal end of the housing, a passage channel that penetrates through the end wall plate, and a gas electron multiplier plate (GEM) and a reading anode located between the optical window and the end wall plate.

EFFECT: increase in the reliability of the photomultiplier.

20 cl, 6 dwg

Description

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Patent Application No. 62/969,389, filed February 3, 2020, entitled "Gas Electron Multiplier Board Photomultiplier", which is incorporated herein by reference in its entirety.

PREREQUISITES FOR CREATION OF THE INVENTION

[0002] A photomultiplier tube (PMT) can detect light in the ultraviolet, visible, and near-infrared regions of the electromagnetic spectrum by transferring the energy of absorbed photons into emitted electrons to produce an electrical signal. Some PMTs use a vacuum tube and dynode structure to multiply electrons. They multiply the current produced by the incident light by 100 million times (eg approximately 160 dB) in multiple dynode stages and thereby provide a low detection threshold.

[0003] Some photomultipliers are designed around a glass housing that is maintained under vacuum. However, such PMTs may be fragile and unable to withstand high temperature or vibration, for example, since they may use a vacuum glass tube, and the internal structure (such as the dynode structure and connections) may be complex and delicate.

SUMMARY OF THE INVENTION

[0004] The present invention provides a photomultiplier tube comprising: a heat-resistant and impact-resistant housing including a proximal end and a distal end; an optical window located at the proximal end of the housing; an end wall plate located at the distal end of the housing; a passageway that penetrates the end wall plate; a gas electron multiplier (GEM) board and a readout anode located between the optical window and the end wall plate, the readout anode located between the GEM board and the end wall plate at a distance from the end wall plate; and a photocathode located between the optical window and the GEM board.

[0005] One or more of the following features may be included in any suitable combination. For example, the device may include a photocathode in the form of a thin film on the surface of an optical window. The photocathode may include sodium potassium antimonide. The passageway may include: an electrically conductive wire that penetrates the end wall plate; and a seal between the electrically conductive wire and the end wall plate. Optical windows may include sapphire. The housing may include titanium or aluminum. The device may include a gas mixture, where the gas mixture includes a proportional gas. The proportional gas may include one of group 18 of the periodic table or nitrogen. The gas mixture may further include a quenching gas. The quenching gas may include one of CO ₂ , CH ₄ or CF ₄ . The photocathode may include at least one layer of vapor deposited material. The thickness of one or more of the at least one layer of vapor deposited material may be less than or equal to approximately 200 nanometers.

[0006] One or more of the at least one layer of vapor deposited material may include a minimum of 90 wt. % of one or more materials selected from the group consisting of antimony (Sb), antimony combined with potassium (1:1) (KSb), antimony combined with potassium (2:1) (KSb ₂ ), antimony combined with potassium (5:4) (K ₅ Sb ₄ ), antimony trioxide (Sb ₂ O ₃ ), cesium (Cs), cesium antimonide (Cs ₃ Sb), gallium arsenide (GaAs), gallium arsenide with cesium (GaAs(Cs) ), cesium bismuthide (Cs ₃ Bi), cesium bismuthide with oxygen (Cs ₃ Bi(O)), cesium bismuthide with silver (Cs ₃ Bi(Ag)), cesium iodide (CsI), cesium oxide (Cs ₂ O), cesium telluride (Cs ₂ Te), gallium-aluminum arsenide (Ga _0.25 Al _0.75 As), gallium phosphide-arsenide (GaAs _1-x P _x ), gallium phosphide-arsenide with cesium (GaAs _1-x P _x (Cs)), gallium nitride (GaN), gallium nitride with cesium (GaN(Cs)), gallium phosphide (GaP), indium gallium arsenide (InGaAs), indium gallium arsenide with cesium (InGaAs(Cs)), phosphide -indium gallium arsenide (InGaAsP), indium gallium arsenide phosphide with cesium (InGaAsP(Cs)), indium phosphide (InP), lithium antimonide (Li ₃ Sb), oxygen (O), potassium (K), potassium antimonide (K ₃ Sb), potassium bromide (KBr), cesium-potassium antimonide (K ₂ CsSb), potassium chloride (KCl), potassium oxide (K ₂ O), potassium-sodium-cesium antimonide ((Cs)Na ₂ KSb) , sodium (Na), sodium antimonide (Na ₃ Sb), sodium arsenide (Na ₃ As), sodium-cesium antimonide (Na ₂ CsSb), sodium oxide (Na ₂ O), sodium-potassium antimonide (Na ₂ KSb), rubidium-cesium antimonide (Rb ₂ CsSb), silver (Ag), silver-bismuth-oxygen-cesium (Ag-Bi-O-Cs), silicon carbide (SiC) and silver-oxygen-cesium (Ag-O-Cs) .

[0007] One or more of the at least one layer of vapor deposited material may include a minimum of 90 wt. % one or more materials selected from the group consisting of aluminum (Al), antimony (Sb), arsenic (As), bismuth (Bi), bromine (Br), cesium (C), chlorine (O), gallium (Ga ), indium (In), lithium (Li), oxygen (O), phosphorus (P), potassium (K), rubidium (Rb), silver (Ag), sodium (Na) and tellurium (Te). One or more of the at least one layer of vapor deposited material may include a minimum of 90 wt. one or more materials selected from the group consisting of silicon (Si), boron nitride (BN), titanium dioxide (TiO ₂ ), silicon carbide (SiC) and silicon dioxide (SiO ₂ ). An electrical potential difference can be applied between the photocathode and the GEM board. The device may include a read anode. The device may include a focusing element. The focusing element may include conductive cylinders or rings. The body may be cylindrical.

BRIEF DESCRIPTION OF GRAPHIC MATERIALS

[0008] A brief description of each drawing is provided to provide a more detailed understanding of the drawings used in the detailed description of the present specification.

[0009] In FIG. Figure 1 shows an example of a vacuum tube of a photomultiplier tube with dynodes.

[0010] In FIG. Figure 2 is a schematic illustration of a photomultiplier tube with dynodes.

[0011] In FIG. 3 is a schematic view of a photomultiplier tube using a gas electron multiplier board (GEM) according to an exemplary embodiment.

[0012] In FIG. Figure 4A schematically shows the mechanism of electron multiplication using a GEM board.

[0013] In FIG. 4B schematically shows a simulation result for electron trajectories within a photomultiplier tube in accordance with an exemplary embodiment.

[0014] In FIG. Figure 5 schematically shows the electric potential field applied inside the housing between the photocathode and the gas electron multiplier board (GEM).

[0015] In FIG. 6A is a schematic side cross-sectional view of another example of a photomultiplier tube using a power plant board according to an embodiment of the present disclosure, and

[0016] In FIG. 6B is an isometric cross-sectional view of the photomultiplier tube shown in FIG. 6A.

[0017] It should be understood that the above drawings are not necessarily to scale and reflect a somewhat simplified representation of various features illustrating the basic principles of the present description. Specific design features of the present disclosure, including, for example, specific sizes, orientations, locations and shapes, are determined in part by the specific intended application and conditions of use.

DETAILED DESCRIPTION

[0018] Some photomultiplier tubes (PMTs), due to the glass vacuum tube structure, can be fragile and incompatible with operating environments in which the PMTs are exposed to high temperatures and severe vibration, such as during well drilling. Glass PMT vacuum tubes can also be unreliable and expensive. Accordingly, embodiments of the present disclosure provide an improved photomultiplier tube that overcomes these disadvantages. As an example, an improved photomultiplier tube may include a gas electron multiplier (GEM) package and board that improves shock and vibration performance. In some embodiments, the dynode structure may be replaced with one or more GEM boards to reduce the length of the device. Applications for the advanced photomultiplier tube may include, but are not limited to, gamma ray detection in drilling rigs, radioactivity detection in security systems, healthcare, and the like.

[0019] In FIG. 1 shows an example of a photomultiplier tube vacuum tube that uses dynodes 100, and FIG. 2 is a schematic illustration of a photomultiplier tube vacuum tube with dynodes 100. As shown in FIG. 2, a vacuum tube photomultiplier tube with dynodes 100 can receive incident light through an optical window 105 located at the end of the glass tube 110. The glass tube 110 is under a vacuum condition. A photocathode 115 is located on the optical window 105, a plurality of dynodes 120 are located within the glass tube 110, and an anode 125 is located after the plurality of dynodes 120. Each of the anode 125 and the plurality of dynodes 120 is connected to the contacts of the connector 130 through feedthrough channels. In operation, an incident photon may strike photo cathode material 115, which may be in the form of a thin conductive layer deposited (e.g., vapor deposited) on the inner surface of optical window 105. Electrons may be emitted from the surface of photo cathode material 115 due to photoelectric effect. The emitted electrons may be directed by the focusing electrode 140 to an electron multiplier where the electrons are multiplied by secondary radiation. Each of the dynodes 120 may be subjected to a progressively higher positive potential (e.g., about 100 volts) compared to the previous dynode to attract electrons and produce more secondary electrons 145. In some embodiments, depending on the target detection wavelength at the front of the optical window 105 may accommodate a scintillator 135. For example, to detect gamma rays, high-energy photons 150 may be converted to low-energy photons 155 within scintillator 135, and high-energy photons 155 may be converted to primary electrons 160 by photo cathode 115.

[0020] In FIG. 3 is a schematic view of one embodiment of a photomultiplier tube 300 using a gas electron multiplier (GEM) board 305 in accordance with an embodiment of the present disclosure. In FIG. 6A-6B show another example of a photomultiplier tube using a GEM board. As shown in FIG. 3, photomultiplier tube 300 may include a housing 310 that includes a proximal end 310p and a distal end 310d. The photomultiplier tube 300 may include an optical window 315 located at the proximal end of the housing 310 and an end wall plate 320 located at the distal end 310d of the housing 310. The power generator board 305 may be located between the optical window 315 and the end wall plate 320. A feedthrough extending through the end wall plate 320 may be included to create electrical connections to the power plant.

[0021] Housing 310 may include a durable material such as metal. In some embodiments, housing 310 may be made of materials including, but not limited to, titanium, aluminum, or alloys thereof. In some embodiments, materials such as glass are used. However, the material forming the body 310 is not limited to this, and various other durable materials can be used.

[0022] The optical window 315 may include a durable and light transmitting material. In some embodiments, the optical window 315 may be made of sapphire. Sapphire can provide advantages when used to create an optical window 315 due to its wide optical bandwidth from ultraviolet to near-infrared, high mechanical strength, high resistance to scratches and abrasives, and heat resistance.

[0023] The end wall plate 320 may also be made of a durable material. In some embodiments, the end wall plate 320 may be made of the same metal material as the housing 310. In other embodiments, the end wall plate 320 may be made of a different material than the housing 310. In certain embodiments, the end wall plate 320 can be made of ceramics or metal. In embodiments in which the end wall plate 320 is made of a conductive material (eg, metal), the connector pin passages may be insulated. Such insulators may include ceramic or glass sealed to end wall plate 320 using, for example, a glass-to-metal or cermet seal.

[0024] By using durable materials to construct the housing 310, optical window 315, and end wall plate 320, embodiments of the photomultiplier tube 300 can withstand high temperature and/or high frequency vibration environments.

[0025] In some embodiments, the housing 310 may be configured in a substantially cylindrical geometry. For example, the diameter of housing 310 may range from about 1/2 inch to about 1 inch (eg, about 1/2 inch, about 3/4 inch, or about 1 inch). For example, the typical length of housing 310 may range from about 1/2 inch to about 3 inches. However, the dimensions of the photomultiplier tube 300 according to the embodiments of the present disclosure are not limited to this, and the dimensions may be changed depending on design requirements and applications.

[0026] In some embodiments, the photocathode 325 may be formed by coating the photocathode on the inner surface of the optical window 315. The photocathode material may be applied as a thin film. Any thin film deposition technique can be used to form the photocathode 325. For example, chemical deposition such as electrolytic deposition, chemical solution deposition (CSD), salt bath deposition (CBD), Langmuir-Blodgett method, spin coating, dip coating, chemical vapor deposition (CVD), plasma chemical vapor deposition phases and atomic layer deposition (ALD); or physical deposition, such as physical vapor deposition (PVD), molecular beam epitaxy (MBE), sputtering, laser deposition, and electrospray deposition, can be used to coat the photocathode 325 on an optical window 315 (eg, a sapphire optical window).

[0027] In some embodiments, photocathode 325 may include at least one layer of vapor deposited material. For example, from one to about 20 layers of vapor deposited material may be used to form the photocathode 325. The thickness of each of the at least layers of vapor deposited material may be less than or equal to approximately 200 nanometers (nm). Embodiments of the at least one layer of vapor deposited material may include one or more materials selected from the group consisting of antimony (Sb), antimony potassium (1:1) (KSb), antimony potassium ( 2:1) (KSb ₂ ), antimony combined with potassium (5:4) (K ₅ Sb ₄ ), antimony trioxide (Sb ₂ O ₃ ), cesium (Cs), cesium antimonide (Cs ₃ Sb), gallium arsenide ( GaAs), gallium arsenide with cesium (GaAs(Cs)), cesium bismuthide (Cs ₃ Bi), cesium bismuthide with oxygen (Cs ₃ Bi(O)), cesium bismuthide with silver (Cs ₃ Bi(Ag)), cesium iodide (CsI), cesium oxide (Cs ₂ O), cesium telluride (Cs ₂ Te), gallium aluminum arsenide (Ga _0.25 Al _0.75 As), gallium phosphide-arsenide (GaAs _1-x P _x ), phosphide -gallium arsenide with cesium (GaAs _1-x P _x (Cs)), gallium nitride (GaN), gallium nitride with cesium (GaN(Cs)), gallium phosphide (GaP), indium gallium arsenide (InGaAs), indium arsenide -gallium with cesium (InGaAs(Cs)), indium gallium arsenide phosphide (InGaAsP), indium gallium arsenide phosphide with cesium (InGaAsP(Cs)), indium phosphide (InP), lithium antimonide (Li ₃ Sb), oxygen (O), potassium (K), potassium antimonide (K ₃ Sb), potassium bromide (KBr), cesium-potassium antimonide (K ₂ CsSb), potassium chloride (KCl), potassium oxide (K ₂ O), potassium antimonide -sodium cesium ((Cs)Na ₂ KSb), sodium (Na), sodium antimonide (Na ₃ Sb), sodium arsenide (Na ₃ As), sodium cesium antimonide (Na ₂ CsSb), sodium oxide (Na ₂ O ), sodium-potassium antimonide (Na ₂ KSb), rubidium-cesium antimonide (Rb ₂ CsSb), silver (Ag), silver-bismuth-oxygen-cesium (Ag-Bi-O-Cs), silicon carbide (SiC) and silver-oxygen-cesium (Ag-O-Cs). These materials can be at least 90 wt. % of each individual photocathode layer 325.

[0028] In some embodiments, each of the at least one layer of vapor deposited material may include one or more materials selected from the group consisting of aluminum (Al), antimony (Sb), arsenic (As), bismuth (Bi), bromine (Br), cesium (C), chlorine (Cl), gallium (Ga), indium (In), lithium (Li), oxygen (O), phosphorus (P), potassium (K), rubidium (Rb), silver (Ag), sodium (Na) and tellurium (Te). These materials can be at least 90 wt. % of each individual photocathode layer 325.

[0029] In some embodiments, each of the at least one layer of vapor deposited material may include one or more materials selected from the group consisting of silicon (Si), boron nitride (BN), titanium dioxide ( TiO ₂ ) and silicon dioxide (SiO ₂ ). These materials can be at least 90 wt. % of each individual photo cathode layer is 325.

[0030] In some embodiments, photocathode 325 may include sodium potassium antimonide. However, the photocathode material is not limited to the above materials, and other photocathode materials can also be used.

[0031] According to embodiments of the present disclosure, the gas mixture may fill the interior space defined by the housing 310, the optical window 315, and the end wall plate 320. The gas mixture may include a proportional gas. In some embodiments, the proportional gas may include a Group 18 gas from the periodic table. Alternatively or additionally, the proportioning gas may include nitrogen. To control the proportionality of the current in response to the intensity of the light (or electromagnetic wave), a quenching gas can be added to the gas mixture. The quench gas may include one or more of CO ₂ , CH ₄ or CF ₄ . The gas mixture may fill the interior volume of the photomultiplier tube 300 at a pressure of about 1 atmosphere or more (at room temperature). In some embodiments, the pressure may be less than 1 atmosphere. Since the internal volume of the photomultiplier tube 300 is maintained at atmospheric pressure, the photomultiplier tube 300 may be less susceptible to implosion due to external influences during operation.

[0032] The photomultiplier tube 300 may include a gas electron multiplier (GEM) board 305 for increasing the electron concentration. Animation can occur in the holes of the power plant plate due to the concentration of electric field lines, for example, as shown and described in more detail below with reference to FIG. 4A. The GEM board 305 may apply a potential difference between two electrodes and thereby release electrons through radiation in a gas. The released electrons can be multiplied and transferred to the collection area.

[0033] Inside the photomultiplier tube 300 according to an embodiment of the present disclosure, the power generator board 305 may be located between the optical window 315 and the end wall plate 320. In some embodiments, there may be more than one power plant board 305 arranged in series. For example, two or three GEM boards 305 may be arranged (eg, stacked with an axial separation between each of the GEM boards 305) to increase gain. Each of the GEM boards 305 can be made in the form of a perforated polymer foil covered with electrodes on both sides. In some embodiments, the GEM board 305 may include a thin metal-coated polymer film that is chemically perforated to create a plurality of holes. For example, the GEM board 305 may include a polyamide film approximately 50 μm thick with a thin layer of copper electrode on each side. In some embodiments, the diameter of each hole may range from about 0.1 mm to about 2 mm. In some embodiments, the diameter of each hole may be between about 0.3 mm and about 1 mm. In some embodiments, the thickness of the power plant board 305 may be from about 0.01 inch to about 0.1 inch, such as 0.020 inch or 0.060 inch. In some embodiments, a plurality of holes of the power plant board 305 may be distributed over the entire area of the power plant board 305. In some embodiments, the plurality of holes may be limited within the region into which the focused electron beam falls. In some embodiments, such as for high temperature applications, the GEM board 305 may include a polyimide circuit board and/or a ceramic circuit board.

[0034] In FIG. 4A schematically shows the mechanism for multiplying 400A electrons. As the ionized proportional gas (positive ions) moves towards the cathode and the electrons move towards the GEM board 305 and into the holes, a strong electric field is created in the holes. Accordingly, the electrons collide with gas molecules, producing additional electrons in a cascading process. In FIG. 4B schematically shows the result of a 400B simulation for electron trajectories within a photomultiplier tube 300 in accordance with an embodiment of the present disclosure.

[0035] In some embodiments, an electrical potential difference between photocathode 325 and GEM board 305 may be used to focus electrons toward GEM board 305. In FIG. 5 schematically shows the electric potential field applied in the housing 310 between the photocathode 325 and the power generator board 305. In an additional or alternative embodiment, a focusing element may be positioned between the photocathode 325 and the first GEM board 305 to generate an applied electric potential field within the photomultiplier tube 300. The focusing element may include a conductive cylinder or ring. In some embodiments, the focusing element may include a plurality of cylinders or rings.

[0036] The photomultiplier tube 300 in accordance with an embodiment of the present disclosure may include a readout anode 330 between the GEM board 305 and the end wall plate 320. The multiplied electrons may be collected at the sense anode 330 to enable the magnitude of the current to be measured. In some embodiments, the bottom of the last GEM board 305 may be used to sense the current pulse. The measured current can be converted to light intensity based on calibration.

[0037] When multiple GEM boards 305 are included, a readout anode 330 may be located between the last GEM board 305 and the end wall plate 320. Herein, the first GEM board and the last GEM board can be determined with respect to the direction of electron motion. For example, the GEM board closest to photocathode 325 may be considered the first GEM board, and the GEM board closest to the end wall plate 320 may be considered the last GEM board.

[0038] As described above, at least one penetration channel may be formed in the end wall plate 320 to create electrical connections to the power generator board 305 and the sense anode 330. Embodiments of a photomultiplier tube 300 in the form of a photomultiplier tube 600 including electrical penetration channel(s) 602 are shown in FIG. 6A-6B. The passage(s) 602 may include an electrically conductive wire that penetrates the end wall plate 320. A gas-tight seal may be provided between the electrically conductive wire and the end wall plate 320. For example, a seal may be applied around the electrically conductive wire to create a gas-tight seal between the electrically conductive wire and the end wall plate 320. Since each GEM board 305 typically requires two electrical connections (for each electrode on both sides) and an additional two electrical connections (one for the cathode and one for the sense anode), a minimum total of 2n+2 can be formed to accommodate n GEM boards 305 passage channels 602 passing through the end wall plate 320. In embodiments including focusing elements, the number of passage channels 602 may be increased. Through electrical feedthroughs 602, a negative voltage may be applied to the photocathode 325, and the sense anode 330 may be grounded. In some embodiments, the readout anode 330 may be at positive high voltage and the photocathode is grounded. The electrodes of the GEM boards 305 may be maintained at an intermediate (negative) voltage between the negative voltage of the photocathode and the ground voltage of the sense anode 330.

[0039] As discussed herein, photomultiplier tubes according to an embodiment of the present disclosure include a stronger optical window for the photocathode and a reinforced housing. Accordingly, photomultiplier tubes according to the present disclosure can provide high temperature resistance and shock resistance. Photomultiplier tubes according to the present disclosure can be used for gamma ray detection in well drilling applications, radioactivity detection in security systems, healthcare, and the like.

[0040] The embodiments of the present disclosure are not limited to the exemplary embodiments described herein, but may be implemented in various variations and modifications. The exemplary embodiments are presented solely to enable any person skilled in the art to understand the scope of the present description, which will be determined by the scope of the claims. Accordingly, in some embodiments, well-known process steps, well-known structures, and well-known technologies are not described in detail to avoid obscuring the present disclosure. As used herein, like reference numerals refer to the same elements.

[0041] The terms used herein are intended to describe specific embodiments only and are not intended to limit the description. As used herein, the singular forms are intended to include the plural unless the context clearly indicates otherwise. It should also be understood that the terms “comprises” and/or “comprising” when used herein indicate the presence of specified features, integers, steps, operations, elements and/or components, but do not exclude the presence or addition of one or more other features , integers, stages, operations, elements, components and/or groups thereof. As used herein, the term “and/or” includes any and all combinations of one or more related listed elements.

[0042] Unless specifically stated or obvious from context, the terms “about”, “approximately” and “substantially” are used interchangeably herein and may be understood to be within the range of normal tolerance in the art, such as within 2 standard deviations of the mean. "About", "approximately" and/or "substantially" can be understood as within 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, 0 .5%, 0.1%, 0.05% or 0.01% of the specified value. Unless the context otherwise makes clear, all numerical values presented herein are modified by the term “about.”

[0043] Hereinafter, although the present description is presented by means of specific items such as specific components and the like, exemplary embodiments and drawings, they are provided only to facilitate understanding of the present description. Therefore, the present description is not limited to the exemplary embodiments. Various modifications and changes may be made by those skilled in the art to which this description relates. Accordingly, the spirit of the present specification should not be limited to the exemplary embodiments described above, but the following claims, as well as all technical substances modified equally or equivalent to the claims, should be interpreted as falling within the scope and spirit of the invention.

Claims (28)

1. Photomultiplier tube containing: a heat-resistant and impact-resistant body including a proximal end and a distal end; an optical window located at the proximal end of the housing; an end wall plate located at the distal end of the housing; a passageway that penetrates the end wall plate; a gas electron multiplier (GEM) board and a readout anode located between the optical window and the end wall plate, the readout anode located between the GEM board and the end wall plate at a distance from the end wall plate; And photocathode located between the optical window and the power plant board. 2. Photomultiplier according to claim 1, containing a photocathode in the form of a thin film on the surface of the optical window. 3. The photomultiplier tube according to claim 2, wherein the photocathode includes sodium potassium antimonide. 4. Photomultiplier according to claim 1, in which the passage channel includes: an electrically conductive wire that penetrates the end wall plate; And hermetic seal between the electrically conductive wire and the end wall plate. 5. A photomultiplier tube according to claim 1, wherein the optical windows include sapphire. 6. Photomultiplier tube according to claim 1, in which the housing is made of metal, including titanium, or aluminum, or their alloys. 7. The photomultiplier tube according to claim 1, further comprising a gas mixture, wherein the gas mixture includes a proportional gas. 8. The photomultiplier tube of claim 7, wherein the proportional gas includes one of group 18 of the periodic table or nitrogen. 9. Photomultiplier tube according to claim 8, wherein the proportional gas is nitrogen. 10. Photomultiplier tube according to claim 7, in which the gas mixture additionally includes a quenching gas. 11. The photomultiplier tube of claim 10, wherein the quenching gas includes one of CO ₂ , CH ₄ or CF ₄ . 12. The photomultiplier tube of claim 2, wherein the photocathode includes at least one layer of vapor deposited material. 13. The photomultiplier tube of claim 12, wherein the thickness of one or more of the at least one layer of vapor deposited material is less than or equal to 200 nanometers. 14. The photomultiplier tube of claim 12, wherein each of the at least one layer of vapor deposited material includes at least 90 wt. % one or more materials selected from the group consisting of: antimony (Sb), antimony combined with potassium (1:1) (KSb), antimony combined with potassium (2:1) (KSb 2 ), antimony combined with potassium (KSb ₂ ), antimony combined with potassium (KSb) with potassium (5:4) (K ₅ Sb ₄ ), antimony trioxide (Sb ₂ O ₃ ), cesium (Cs), cesium antimonide (Cs ₃ Sb), gallium arsenide (GaAs), gallium arsenide with cesium (GaAs(Cs )), cesium bismuthide (Cs ₃ Bi), cesium bismuthide with oxygen (Cs ₃ Bi(O)), cesium bismuthide with silver (Cs ₃ Bi(Ag)), cesium iodide (CsI), cesium oxide (Cs ₂ O) , cesium telluride (Cs ₂ Te), gallium-aluminum arsenide (Ga _0.25 Al _0.75 As), gallium phosphide-arsenide (GaAs _1-x P _x ), gallium phosphide-arsenide with cesium (GaAs _1-x P _x (Cs)), gallium nitride (GaN), gallium nitride with cesium (GaN(Cs)), gallium phosphide (GaP), indium gallium arsenide (InGaAs), indium gallium arsenide with cesium (InGaAs(Cs)), indium gallium arsenide phosphide (InGaAsP), indium gallium arsenide phosphide with cesium (InGaAsP(Cs)), indium phosphide (InP), lithium antimonide (Li ₃ Sb), oxygen (O), potassium (K), antimonide potassium (K ₃ Sb), potassium bromide (KBr), cesium-potassium antimonide (K ₂ CsSb), potassium chloride (KCl), potassium oxide (K ₂ O), potassium-sodium-cesium antimonide ((Cs)Na ₂ KSb ), sodium (Na), sodium antimonide (Na ₃ Sb), sodium arsenide (Na ₃ As), sodium cesium antimonide (Na ₂ CsSb), sodium oxide (Na ₂ O), sodium potassium antimonide (Na ₂ KSb) , rubidium-cesium antimonide (Rb ₂ CsSb), silver (Ag), silver-bismuth-oxygen-cesium (Ag-Bi-O-Cs), silicon carbide (SiC) and silver-oxygen-cesium (Ag-O-Cs ). 15. The photomultiplier tube of claim 12, wherein each of the at least one layer of vapor deposited material includes at least 90 wt. % of one or more materials selected from the group consisting of: aluminum (Al), antimony (Sb), arsenic (As), bismuth (Bi), bromine (Br), cesium (C), chlorine (Cl), gallium ( Ga), indium (In), lithium (Li), oxygen (O), phosphorus (P), potassium (K), rubidium (Rb), silver (Ag), sodium (Na) and tellurium (Te). 16. The photomultiplier tube of claim 12, wherein each of the at least one layer of vapor deposited material includes at least 90 wt. % of one or more materials selected from the group consisting of: silicon (Si), boron nitride (BN), titanium dioxide (TiO ₂ ), silicon carbide (SiC) and silicon dioxide (SiO ₂ ). 17. Photomultiplier according to claim 2, in which the electrical potential difference is applied between the photocathode and the power plant board. 18. Photomultiplier tube according to claim 1, in which the end wall plate is made of the same material as the housing, in particular a metal material. 19. Photomultiplier tube according to claim 1, additionally containing a focusing element including conducting cylinders or rings. 20. Photomultiplier according to claim 1, in which the housing is cylindrical.