RU2786593C1 - Memory card and end device - Google Patents

Abstract

FIELD: data storage devices.

SUBSTANCE: invention relates to a terminal device for data storage. The storage terminal includes a connector for receiving a memory card containing a memory card interface. The memory card interface is located on the memory card body. The size of the memory card body is the same as the size of the Nano SIM card body. The memory card interface contains eight metal contacts. The first metal contact is electrically connected to the first spring contact, the fifth metal contact is connected to the second spring contact, the seventh metal contact is connected to the third spring contact, the eighth metal contact is connected to the fourth spring contact when the memory card is located in the connector. When the nano SIM card is located in the connector, the power supply contact of the nano SIM card is connected to the first spring contact and the third spring contact, and the ground contact of the nano SIM card is connected to the second spring contact and the fourth spring contact.

EFFECT: optimal use of the space of the terminal device.

16 cl, 38 dwg, 4 tbl

Description

The field of technology to which the invention belongs

The present invention relates to communication technologies, in particular to a memory card and terminal device.

State of the art

With the development of terminal technologies, terminal devices have become an important means of communication in the daily life and work of people. Currently, a subscriber identity module (SIM) card and a secure digital memory (SD) card are located in the end device. In addition, the terminal may communicate using a SIM card, and the terminal may store data on an SD card.

In the prior art, dual nano-SIM cards are configured in the terminal device. In particular, the terminal device provides two nano SIM card holders, and two nano SIM cards can be separately inserted into the nano SIM card holders, so that the terminal device communicates using two nano SIM cards.

However, when a user uses a terminal device, the user typically configures only one nano-SIM card in the terminal device and uses only one nano-SIM card. Therefore, no nano-SIM card is inserted into another card holder in the terminal, resulting in an inefficient use of space in the terminal. Further, the SD card provided in the prior art is a Micro-SD card, and the shapes and interface of the existing Micro-SD card and nano-SIM card are completely incompatible. Therefore, a Micro-SD card holder compatible with an existing Micro-SD card is additionally located in the terminal device. As the design of the terminal device becomes more and more compact, the optimization of the design space becomes a challenge in the industry.

Disclosure of the essence of the invention

In the present description, a memory card and terminal device is proposed to solve the technical problem of optimal use of the space of the terminal device due to the fact that one nano-nano-SIM card holder in a terminal device providing two nano-SIM card holders is not used, and that the existing Micro -SD card is completely incompatible with nano-SIM card.

According to a first aspect, the present invention provides a memory card including: a storage unit, a control unit, and a memory card interface, where the storage unit and the control unit are located inside the memory card body, the memory card interface is located on the memory card body, the control unit is electrically connected to storage unit and memory card interface separately, the shape of the memory card is the same as that of the nano SIM card, and the size of the memory card is the same as that of the nano SIM card; wherein

the memory card interface includes at least a first metal contact of the memory card, a second metal contact of the memory card, a third metal contact of the memory card, a fourth metal contact of the memory card, and a fifth metal contact of the memory card, wherein the first metal contact of the memory card is configured to transmit a power signal, the second metal contact of the memory card is configured to transmit data, the third metal contact of the memory card is configured to transmit a control signal, the fourth metal contact of the memory card is configured to transmit a clock signal, and the fifth metal contact of the memory card is configured to transmit a ground signal .

With reference to the first aspect, in the first implementation of the first aspect, the first memory card metal contact, the second memory card metal contact, the third memory card metal contact, the fourth memory card metal contact, and the fifth memory card metal contact are all located on one side surface of the memory card body.

With reference to the first aspect or the first implementation of the first aspect, in the second implementation of the first aspect, the first metal contact of the nano SIM card, the second metal contact of the nano SIM card, the third metal contact of the nano SIM card, the fourth metal contact of the nano SIM card, the fifth the metal contact of the nano-SIM card and the sixth metal contact of the nano-SIM card are located on the body of the nano-SIM card;

the memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is configured to transmit data, the seventh metal contact of the memory card is configured to transmit data, and the eighth metal contact of the memory card the contact of the memory card is configured to transmit data;

an area on the body of the memory card in which the fourth metal contact of the memory card is located corresponds to an area on the body of the nano SIM card in which the first metal contact of the nano SIM card is located;

an area on the memory card body in which the second metal contact of the memory card is located corresponds to an area on the body of the nano SIM card in which the second metal contact of the nano SIM card is located;

The seventh metal contact of the memory card is adjacent to and isolated from the first metal contact of the memory card, the area on the body of the memory card in which the seventh metal contact of the memory card and the first metal contact of the memory card are located corresponds to the area on the body of the nano-SIM card in which the third metal contact of the nano-SIM card is located, and the seventh metal contact of the memory card is adjacent to the second metal contact of the memory card;

an area on the memory card body in which the sixth metal contact of the memory card is located corresponds to an area on the body of the nano SIM card in which the fourth metal contact of the nano SIM card is located;

an area on the body of the memory card in which the third metal contact of the memory card is located corresponds to an area on the body of the nano SIM card in which the fifth metal contact of the nano SIM card is located; and

the eighth metal contact of the memory card is adjacent to the fifth metal contact of the memory card, the area on the body of the memory card, which contains the eighth metal contact of the memory card and the fifth metal contact of the memory card, corresponds to the area on the body of the nano-SIM card, which contains the sixth metal contact nano-SIM cards, and the eighth metal contact of the memory card is next to the third metal contact of the memory card.

Referring to the first aspect or the first implementation of the first aspect, in the third implementation of the first aspect, the first metal contact of the nano SIM nano SIM card, the second metal contact of the nano SIM nano SIM card, the third metal contact of the nano SIM nano SIM card, the fourth metal contact of the nano SIM card nano, the fifth metal contact of the SIM card nano SIM nano and the sixth metal contact of the SIM card nano SIM nano are located on the body of the nano SIM card SIM nano;

the memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is configured to transmit data, the seventh metal contact of the memory card is configured to transmit data, and the eighth metal contact of the memory card the contact of the memory card is configured to transmit data;

the seventh metal contact of the memory card is located next to and isolated from the fourth metal contact of the memory card, the area on the body of the memory card, in which the seventh metal contact of the memory card and the fourth metal contact of the memory card are located, corresponds to the area on the body of the SIM card nano card SIM nano, in which the the first metal contact of the SIM card nano SIM nano;

the area on the body of the memory card, in which the second metal contact of the memory card is located, corresponds to the area on the body of the SIM card nano SIM nano, in which the second metal contact of the SIM card nano SIM nano is located and the fourth metal contact of the memory card is located next to the second metal contact memory cards;

the area on the body of the memory card, in which the first metal contact of the memory card is located, corresponds to the area on the body of the SIM card nano SIM nano, in which the third metal contact of the SIM card nano SIM nano is located;

the area on the body of the memory card where the third metal contact of the memory card is located corresponds to the area on the body of the SIM card nano SIM nano, where the fifth metal contact of the SIM nano SIM card is located, and the sixth metal contact of the memory card is next to the third metal contact memory cards; and

the area on the body of the memory card where the fifth metal contact of the memory card is located corresponds to the area on the body of the nano-SIM card where the sixth metal contact of the nano-SIM card is located.

With reference to the first aspect or the first implementation of the first aspect, in the fourth implementation of the first aspect, the first metal contact of the nano SIM card, the second metal contact of the nano SIM card, the third metal contact of the nano SIM card, the fourth metal contact of the nano SIM card, the fifth the metal contact of the nano-SIM card and the sixth metal contact of the nano-SIM card are located on the body of the nano-SIM card;

the memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is configured to transmit data, the seventh metal contact of the memory card is configured to transmit data, and the eighth metal contact of the memory card the contact of the memory card is configured to transmit data;

an area on the body of the memory card in which the fourth metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the first metal contact of the nano-SIM card is located;

the second metal contact of the memory card is located near and isolated from the seventh metal contact of the memory card, the area on the body of the memory card, in which the second metal contact of the memory card and the seventh metal contact of the memory card are located, corresponds to the area on the body of the nano-SIM card, in which the the second metal contact of the nano-SIM card, and the second metal contact of the memory card is adjacent to the fourth metal contact of the memory card;

the area on the body of the memory card where the first metal contact of the memory card is located corresponds to the area on the body of the nano-SIM card where the third metal contact of the nano-SIM card is located, and the seventh metal contact of the memory card is adjacent to the first metal contact of the card memory;

an area on the memory card body in which the sixth metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the fourth metal contact of the nano-SIM card is located;

the third metal contact of the memory card is located next to the eighth metal contact of the memory card, the area on the body of the memory card in which the third metal contact of the memory card and the eighth metal contact of the memory card are located corresponds to the area on the body of the nano-SIM card in which the fifth metal contact is located nano-SIM card, and the third metal contact of the memory card is located next to the sixth metal contact of the memory card; and

the area on the body of the memory card where the fifth metal contact of the memory card is located corresponds to the area on the body of the nano-SIM card where the sixth metal contact of the nano-SIM card is located, and the eighth metal contact of the memory card is next to the fifth metal contact of the memory card .

With reference to the first aspect or the first implementation of the first aspect, in the fifth implementation of the first aspect, the first metal contact of the nano SIM card, the second metal contact of the nano SIM card, the third metal contact of the nano SIM card, the fourth metal contact of the nano SIM card, the fifth the metal contact of the nano-SIM card and the sixth metal contact of the nano-SIM card are located on the body of the nano-SIM card;

the memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is configured to transmit data, the seventh metal contact of the memory card is configured to transmit data, and the eighth metal contact of the memory card the contact of the memory card is configured to transmit data;

an area on the body of the memory card in which the fourth metal contact of the memory card is located corresponds to an area on the body of the nano SIM card in which the first metal contact of the nano SIM card is located;

an area on the body of the memory card in which the second metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the second metal contact of the nano-SIM card is located;

the seventh metal contact of the memory card is adjacent to the first metal contact of the memory card, the area on the body of the memory card in which the seventh metal contact of the memory card and the first metal contact of the memory card is located corresponds to the area on the body of the nano-SIM card in which the third metal contact of the nano is located -SIM card, the first metal contact of the memory card is next to the second metal contact of the memory card contact, the area of the first metal contact of the memory card is larger than that of the seventh metal contact of the memory card;

an area on the body of the memory card in which the sixth metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the fourth metal contact of the nano-SIM card is located;

an area on the body of the memory card in which the third metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the fifth metal contact of the nano-SIM card is located; and

the eighth metal contact of the memory card is adjacent to the fifth metal contact of the memory card, the area on the body of the memory card in which the eighth metal contact of the memory card is located and the fifth metal contact of the memory card corresponds to the area on the body of the nano-SIM card in which the sixth metal contact of the nano is located -SIM card, the fifth metal contact of the memory card is adjacent to the third metal contact of the memory card, and the area of the fifth metal contact of the memory card is larger than that of the eighth metal contact of the memory card.

With reference to the first aspect or the first implementation of the first aspect, in the sixth implementation of the first aspect, the first metal contact of the nano-SIM card, the second metal contact of the nano-SIM card, the third metal contact of the nano-SIM card, the fourth metal contact of the nano-SIM card, the fifth metal the nano-SIM card contact and the sixth nano-SIM metal contact are located on the nano-SIM card body;

the memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is configured to transmit data, the seventh metal contact of the memory card is configured to transmit data, and the eighth metal contact of the memory card the contact of the memory card is configured to transmit data;

an area on the body of the memory card in which the fourth metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the first metal contact of the nano-SIM card is located;

an area on the body of the memory card in which the second metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the second metal contact of the nano-SIM card is located;

an area on the body of the memory card in which the first metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the third metal contact of the nano-SIM card is located;

an area on the body of the memory card in which the sixth metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the fourth metal contact of the nano-SIM card is located;

an area on the body of the memory card in which the third metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the fifth metal contact of the nano-SIM card is located;

an area on the body of the memory card in which the fifth metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the sixth metal contact of the nano-SIM card is located;

the seventh metal contact of the memory card is located between the fourth metal contact of the memory card and the sixth metal contact of the memory card, the seventh metal contact of the memory card is isolated from the fourth metal contact of the memory card and the sixth metal contact of the memory card, and the center point of the seventh metal contact of the memory card is located on the connection line between the center point of the fourth metal contact of the memory card and the center point of the sixth metal contact of the memory card; and

the eighth metal contact of the memory card is located between the first metal contact of the memory card and the fifth metal contact of the memory card, the eighth metal contact of the memory card is isolated from the first metal contact of the memory card and the fifth metal contact of the memory card, and the center point of the eighth metal contact of the memory card is located on the connection line between the center point of the first metal contact of the memory card and the center point of the fifth metal contact of the memory card.

With reference to the first aspect or the first implementation of the first aspect, in the seventh implementation of the first aspect, the first metal contact of the nano SIM card, the second metal contact of the nano SIM card, the third metal contact of the nano SIM card, the fourth metal contact of the nano SIM card, the fifth the metal contact of the nano-SIM card and the sixth metal contact of the nano-SIM card are located on the body of the nano-SIM card;

the memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is configured to transmit data, the seventh metal contact of the memory card is configured to transmit data, and the eighth metal contact of the memory card the contact of the memory card is configured to transmit data;

an area on the memory card body in which the sixth metal contact of the memory card is located corresponds to an area on the body of the nano SIM card in which the first metal contact of the nano SIM card is located;

an area on the body of the memory card in which the third metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the second metal contact of the nano-SIM card is located;

the seventh metal contact of the memory card is adjacent to the first metal contact of the memory card, the area on the body of the memory card in which the seventh metal contact of the memory card is located and the first metal contact of the memory card corresponds to the area on the body of the nano-SIM card in which the third metal contact of the nano is located -SIM cards and the seventh metal contact of the memory card is located next to the third metal contact of the memory card;

an area on the body of the memory card in which the fourth metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the fourth metal contact of the nano-SIM card is located;

an area on the body of the memory card in which the second metal contact of the memory card is located corresponds to an area on the body of the nano-SIM card in which the fifth metal contact of the nano-SIM card is located; and

the eighth metal contact of the memory card is adjacent to the fifth metal contact of the memory card, the area on the body of the memory card in which the eighth metal contact of the memory card is located and the fifth metal contact of the memory card corresponds to the area on the body of the nano-SIM card in which the sixth metal contact of the nano is located -SIM card, and the eighth metal contact of the memory card is located next to the second metal contact of the memory card.

With reference to the first aspect or the first implementation of the first aspect, in the eighth implementation of the first aspect, the first metal contact of the nano SIM card, the second metal contact of the nano SIM card, the third metal contact of the nano SIM card, the fourth metal contact of the nano SIM card, the fifth metal the nano-SIM card contact and the sixth nano-SIM metal contact are located on the nano-SIM card body;

the memory card interface further includes a sixth metal contact of the memory card, a seventh metal contact of the memory card, and an eighth metal contact of the memory card, wherein the sixth metal contact of the memory card is configured to transmit data, the seventh metal contact of the memory card is configured to transmit data, and the eighth metal contact of the memory card the contact of the memory card is configured to transmit data;

the seventh metal contact of the memory card is located adjacent to and isolated from the fourth metal contact of the memory card, the area on the body of the memory card in which the seventh metal contact of the memory card and the fourth metal contact of the memory card correspond to the area on the body of the nano-SIM card in which the first metal nano-SIM card contact;

the area on the body of the memory card, in which the third metal contact of the memory card is located, corresponds to the area on the body of the nano-SIM card, in which the second metal contact of the nano-SIM card is located, and the clock signal of the memory card is located near the third metal contact of the memory card;

an area on the body of the memory card in which the fifth metal contact of the memory card is located corresponds to an area on the body of the nano SIM card in which the third metal contact of the nano SIM card is located;

the eighth metal contact of the memory card is adjacent to the sixth metal contact of the memory card, the area on the body of the memory card in which the eighth metal contact of the memory card is located and the sixth metal contact of the memory card corresponds to the area on the body of the nano-SIM card in which the fourth metal contact of the nano is located -SIM cards;

the area on the body of the memory card where the second metal contact of the memory card is located corresponds to the area on the body of the nano-SIM card where the fifth metal contact of the nano-SIM card is located, and the sixth metal contact of the memory card is next to the second metal contact of the memory card ; and

the area on the body of the memory card in which the first metal contact of the memory card is located corresponds to the area on the body of the nano-SIM card in which the sixth metal contact of the nano-SIM card is located.

According to a second aspect, the present disclosure provides a terminal device. The memory card in accordance with any of the first aspect or implementations of the first aspect is located in the terminal device.

In the above aspects, a memory card is provided, including a storage unit, a control unit, and a memory card interface. The storage unit and the control unit are located inside the memory card housing. The memory card interface is located on the memory card body. The control unit is electrically connected to the storage unit and memory card interface separately. Since the shape of the memory card is the same as that of the nano SIM card of the subscriber identity module and the size of the memory card is the same as that of the nano SIM card, a nano SD card is provided, so that the memory card provided in the embodiments can be inserted into the nano SIM card holder. In addition, a memory card and a nano SIM card can share the same nano SIM card holder.

Brief description of the drawings

Fig. 1 is a diagram of a memory card according to an embodiment of the present invention;

fig. 2 is a schematic diagram of a nano-SIM card in the prior art;

fig. 3 is a diagram 1 of another memory card according to an embodiment of the present invention;

fig. 3a is a diagram 2 of another memory card according to an embodiment of the present invention;

fig. 3b is a diagram 3 of another memory card according to an embodiment of the present invention;

fig. 3c is a diagram 4 of another memory card according to an embodiment of the present invention;

fig. 4 is a diagram 1 of another memory card according to an embodiment of the present invention;

fig. 4a is a diagram 2 of another memory card according to an embodiment of the present invention;

fig. 5 is a diagram of another memory card according to an embodiment of the present invention;

fig. 6 is a diagram of another memory card according to an embodiment of the present invention;

fig. 7 is a diagram of an additional memory card according to an embodiment of the present invention;

fig. 8 is a diagram of another memory card according to an embodiment of the present invention;

fig. 9 is a diagram of another memory card according to an embodiment of the present invention;

fig. 10 is a diagram of another additional memory card according to an embodiment of the present invention;

fig. 11 is a diagram of another memory card according to an embodiment of the present invention;

fig. 12 is a diagram of another memory card according to an embodiment of the present invention;

fig. 13 is a diagram of another memory card according to an embodiment of the present invention;

fig. 14 is a diagram of another memory card according to an embodiment of the present invention;

fig. 15 is a diagram of another memory card according to an embodiment of the present invention;

fig. 16 is a diagram of another memory card according to an embodiment of the present invention;

fig. 17 is a diagram of another memory card according to an embodiment of the present invention;

fig. 18 is a diagram of another memory card according to an embodiment of the present invention;

fig. 19 is a diagram of another memory card according to an embodiment of the present invention;

fig. 20 is a diagram of another memory card according to an embodiment of the present invention;

fig. 21 is a diagram of another memory card according to an embodiment of the present invention;

fig. 22 is a diagram of another memory card according to an embodiment of the present invention;

fig. 23 is a diagram of another memory card according to an embodiment of the present invention;

fig. 24 is a diagram of another memory card according to an embodiment of the present invention;

fig. 25 is a diagram of another memory card according to an embodiment of the present invention;

fig. 26 is a diagram of a terminal device according to an embodiment of the present invention;

fig. 27 is a diagram 1 of another memory card according to an embodiment of the present invention;

fig. 28 is a diagram 2 of another memory card according to an embodiment of the present invention;

fig. 29 is a diagram 3 of another memory card according to an embodiment of the present invention;

fig. 30 is a diagram 4 of another memory card according to an embodiment of the present invention;

fig. 31 is a diagram 5 of another memory card according to an embodiment of the present invention;

fig. 32 is a diagram 6 of another memory card according to an embodiment of the present invention;

fig. 33 is a diagram 7 of another memory card according to an embodiment of the present invention; and

fig. 34 is a detection circuit for detecting the insertion and removal of a memory card according to an embodiment of the present invention.

Implementation of the invention

Embodiments of the present invention apply to a communication device. The following explains and describes some of the terms in the present invention for ease of understanding of the person skilled in the art. It should be noted that when the solutions in the embodiments of the present invention are applied to the current communication device or a communication device that may appear in the future, the name of the memory card and terminal device may change, but this does not affect the implementation of the solution in the embodiments of the present invention.

First, the technical terms mentioned in the present invention are explained:

(1) Universal Serial Bus (USB): Universal Serial Bus is a serial port bus standard for communication between a computer system and an external device, and is also a technical specification for input/output interfaces, and is widely applied to information communication products such as personal computer and mobile device.

(2) Institute of Electrical and Electronics Engineers (IEEE) Standard 1394: IEEE 1394 is a serial standard.

(3) Terminal device: The terminal device may include various portable devices with a communication function, an automobile device, a wearable device, a smart home device, a computing device or other processing device connected to a wireless modem, and terminal devices in various forms, for example, mobile station (MS), terminal device (terminal), user equipment (user equipment, UE) and software terminal device such as water meter, power meter and sensor.

It should be noted that the nouns or terms mentioned in the embodiments of the present invention may be referred to each other, and the details are not described again.

It should be noted that in embodiments of the present invention, when a memory card of the same shape and size as that of a nano-SIM card is used to realize the storage function, the type of the memory card is not limited to the SD card in the above examples. In embodiments of the present invention, the memory card may alternatively be a memory card based on an interface protocol such as universal serial bus (USB), peripheral component interconnect express (PCIE), universal flash memory ( universal flash storage (UFS), multimedia card (multimedia card, MMC) or embedded multimedia card (embedded multimedia card, EMMC).

The following describes the technical solution in the example with reference to the accompanying drawing in the example. In the prior art, a micro-SD card or nano-SIM card may be configured on the current terminal device. The size of the Micro-SD card is 11 millimeters (mm) × 15 millimeters. The size of the nano-SIM card is 8.8 mm × 12.3 mm. The size of the Micro-SD card is 56 mm ² larger than that of the nano-SIM card. Therefore, the size of the Micro-SD card holder is larger than that of the nano-SIM card holder by 130 mm ² . Obviously, a Micro-SD card cannot be inserted into a nano-SIM card holder. However, when a terminal device provides two nano SIM card holders, the user typically configures only one nano SIM card on the terminal device and uses only one nano SIM card. Therefore, no nano-SIM card is inserted into another nano-SIM card holder on the terminal device, wasting the space of the terminal device. Additionally, since a Micro-SD card cannot be inserted into a nano-SIM card holder, a terminal device configured with two nano-SIM card holders cannot store data.

The terminal in embodiments of the present invention is a metal contact. To be specific, the terminal may be a contact with a contact area and a conductive function. The output in the embodiments of the present invention may be referred to as a connection terminal. The specific output name is not specifically limited.

In embodiments of the present invention, that A and B "match" can also be referred to as that there is a mapping between A and B. This indicates that A and B match/map to the same nano-SIM holder spring-loaded pin. cards. For example, the area on the body of the memory card where the clock pin of the memory card is located corresponds to the area on the body of the nano-SIM card where the clock pin of the nano-SIM card is located. Here, "corresponding" may also be referred to as that the clock output of the memory card is mapped to the clock output of the nano SIM card. In particular, the memory card clock output and the nano SIM clock output correspond/map to the same spring-loaded contact of the nano SIM card holder.

In embodiments of the present invention, the “power supply terminal” of the memory card is the “first metal contact of the memory card”, the “data transfer terminal” of the memory card is the “second metal contact of the memory card”, the “control signal output” of the memory card is the “third metal contact of the card memory card, "clock pin" of the memory card is the "fourth metallic The "second transfer pin" of the memory card is the "sixth metal pin", the "third transfer pin" of the memory card is the "seventh metal pin", the "fourth transfer pin" of the memory card is the "eighth metal pin".

In embodiments of the present invention, the "clock signal pin" of the nano-SIM card is the "first metal pin of the nano-SIM card", the "reset signal pin" of the nano-SIM card is the "second metal pin" of the nano-SIM card, the "pin power supply" of the nano-SIM card represents the "third metal pin of the nano-SIM card", the "transmission pin" of the nano-SIM card represents the "fourth metal pin" of the nano-SIM card, the "input signal/voltage programming pin" of the nano - The SIM card is the "fifth metal pin" of the nano SIM card, the "ground pin" of the nano SIM card is the "sixth metal pin" of the nano SIM card.

Fig. 1 is a diagram of a memory card according to an embodiment of the present invention. As shown in FIG. 1, the memory card includes: a storage unit, a control unit and a memory card interface. The storage unit and the control unit are located inside the memory card housing. The memory card interface is located on the memory card body. The control unit is electrically connected to the storage unit and memory card interface separately. The shape of the memory card is the same as that of the nano SIM card, and the size of the memory card is the same as that of the nano SIM card.

The memory card interface includes at least a power supply terminal, a data transmission terminal, a control signal terminal, a clock signal terminal, and a ground terminal.

In an exemplary embodiment, all of the power pin, data pin, control pin, clock pin, and ground pin are all located on the same side surface of the memory card housing.

In this embodiment, specifically, the memory card includes a storage unit, a control unit, and a memory card interface. Additionally, the memory card further includes an interface control circuit. The storage unit, the control unit, and the interface control circuit are located inside the memory card body, and the memory card interface is located on the surface of the memory card body.

Additionally, the control unit is electrically connected to the storage unit and the memory card interface separately. Specifically, the interface control circuit is electrically connected to the memory card interface and the control unit. Further, the interface control circuit electrically connects the memory card interface and the control unit, and electrically connects the control unit and the storage unit.

The memory card interface includes at least one power supply terminal, four data transmission terminals, one control signal terminal, one clock signal terminal, and one ground signal terminal. The power pin, data pin, control pin, clock pin, and ground pin are all located on the same surface of the memory card case. As shown in FIG. 1, each of the above pins is indicated by 11 in FIG. 1. It is possible that the memory card power supply terminal, the memory card data transmission terminal, the memory card control signal output, the memory card clock signal output, and the memory card ground terminal are flat pins attached to the surface of the memory card case.

In a possible embodiment, at least one wire is located on the body of the memory card. At least one wire is located between the pins in the memory card interface. At least one wire is for connecting the storage unit and the control unit. At least one wire is additionally configured to connect the control unit and the memory card interface.

The location of the memory card interface pins on the memory card body is not limited. The length and height of the memory card interface pins are unlimited. The shapes of the terminals (or contacts or connection terminals) referred to in this embodiment may be regular rectangles or may be irregularly shaped. The shape of the leads (or contacts, or connection terminals) is not limited in this embodiment. The distance between the edges of the memory card interface pins and the side edges of the memory card is unlimited. The specific height and length of the memory card is not limited.

For example, from the angle of view in FIG. 1, the memory card length direction is from left to right, and the memory card width direction is from bottom to top. The length of the memory card is 12.30 mm with a tolerance of 0.10 mm. The memory card is 8.80 mm wide with a tolerance of 0.10 mm.

The shape of the memory card provided in this embodiment of the present invention is the same as that of the nano SIM card. For example, the shape of the nano-SIM card is a rectangle, the four corners of the rectangle are round corners, and a mounting notch is provided in one of the four corners of the rectangle. In addition, the shape of the memory card provided in this embodiment of the present invention is also a rectangle, the four corners of the rectangle are round corners, a bevel is provided in one of the four corners of the rectangle, and, in addition, the installation notch 12 is provided in the corner. Further, the size of the card of the memory provided in this embodiment of the present invention is the same as the size of the nano-SIM card. In particular, the length of the memory card is the same as that of the nano SIM card, the width of the memory card is the same as that of the nano SIM card, and the size of the insertion recess on the memory card is the same as that of the insertion recess of the nano SIM card. Therefore, the memory card provided in this embodiment of the present invention can be inserted into the nano SIM card holder. In addition, a memory card and a nano SIM card can share the same nano SIM card holder.

The memory card provided in this embodiment of the present invention can be cut, and can be basically adapted to a card cutting case and a non-card cutting case. For example, from the angle of view in FIG. 1 The X direction of the memory card is from top to bottom and the Y direction of the memory card is from left to right. Table 1 shows the negotiation between the nano-SIM card and the nano-SIM card holder of the terminal, and the negotiation between the memory card in this embodiment and the nano-SIM card holder of the terminal.

Table 1. Tolerance analysis between the memory card in the present invention and the nano-SIM card holder of the terminal device

Description of stub size tolerance in X direction Tolerance (millimeter) Description of stub size tolerance in Y direction Tolerance (millimeter) Surface mount technology (SMT) card holder accuracy 0.05 SMT Precision Nano SD Card Holder 0.05 Printed circuit board (PCB) positioning accuracy 0.1 PCB positioning accuracy 0.1 Offset of the card location relative to the cardholder 0.1 Body width tolerance of the middle frame 0.1 Spring Contact Accuracy 0.05 Card Tray Loading Space Thickness Tolerance 0.05 Theoretical maximum displacement of a spring-loaded contact Offset of the card location relative to the cardholder 0.1 Worst Case 0.3 Spring Contact Accuracy 0.05 Root sum of squares (root-sum-squares, RSS) 0.16 Theoretical maximum displacement of a spring-loaded contact (Worst Case+RSS)/2 0.23 Worst case 0.45 RSS 0.19 (Worst case +RSS)/2 0.33

It can be seen from Table 1 that the tolerance formed during fitting between the memory card in this embodiment and the nano SIM card holder of the terminal device is the same as that formed during fitting between the nano SIM card and the nano SIM holder. terminal cards. Therefore, the memory card in this embodiment fits well in the nano SIM card holder.

In this embodiment, a memory card including a storage unit, a control unit, and a memory card interface is provided. The storage unit and the control unit are located inside the memory card housing. The memory card interface is located on the memory card body. The control unit is electrically connected to the storage unit and memory card interface separately. Since the shape of the memory card is the same as that of the nano SIM card of the subscriber identity module and the size of the memory card is the same as that of the nano SIM card, a nano SD card is provided. As shown in FIG. 1, a positioning notch 12 is provided on the nano SD card for positioning. Therefore, the memory card provided in this embodiment can be inserted into the nano SIM card holder. Also, the memory card and nano SIM card can use the same nano SIM card holder.

In FIG. 2 shows a schematic diagram of a nano-SIM card in the prior art. As shown in FIG. 2, a clock signal terminal 31, a signal reset terminal 32, a power supply terminal 33, a data transmission terminal 34, a programming/input signal terminal 35, and a ground signal terminal 36 are disposed on the body of the nano SIM card. In the following embodiments, at the time of output splitting, the shape and size of the output obtained by splitting is not limited, and the shape and size of the other output is also not limited. For example, the edges of the memory card leads may or may not be chamfered. In the following embodiments, when the output is divided, the shape and size of the memory card is also not limited. For example, a mounting recess may be provided in a corner of the memory card.

Fig. 3 is a diagram 1 of another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 3, the memory card includes four pins for data transfer. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the output 21 of the clock signal of the memory card is located corresponds to the area on the body of the nano-SIM card in which the output 31 of the clock signal 31 of the nano-SIM card is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located.

The third output 27 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card and is isolated from it. The area on the body of the memory card in which the third data transmission terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the body of the nano SIM card in which the power supply terminal 33 of the nano SIM card is located. The third output 27 data transmission is located next to the first output 25 data transmission of the memory card.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano SIM card body where the programming voltage/input signal terminal 35 of the nano SIM card is located.

The fourth output 28 of the data transfer of the memory card is located next to the isolated output 24 of the ground signal of the memory card. The area on the body of the memory card in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located. The fourth output 28 of the data transmission is located next to the output 23 of the control signal of the memory card.

In this embodiment, specifically as shown in FIG. 2, one clock signal pin 31 (clock signal, CLK), one reset signal pin 32 (RST), one power supply pin 33 (power supply, VCC), one data line pin 34 (data line, DAT), one programming voltage/input signal (VPP) pin 35 and one power supply ground (GND) pin 36 are located on the card body of the existing nano-SIM card. For example, the center points of CLK pin 31, RST pin 32, and VCC pin 33 are all on the same straight line; the center points of DAT pin 34, VPP pin 35, and GND pin 36 are in a straight line; and the two lines are parallel.

As shown in FIG. 3, the memory card interface of the memory card provided in this embodiment of the present invention includes at least a clock signal terminal 21, a power supply terminal 22, a control signal (command/response, CMD) terminal 23, a ground signal terminal 24, the first transmission terminal 25, the second transmission terminal 26, the third transmission terminal 27, and the fourth transmission terminal 28.

As shown in FIG. 3, in this embodiment, the area on the memory card body in which the memory card clock terminal 21 is located corresponds to the area on the nano SIM card body in which the nano SIM card clock terminal 31 is located. Here, "corresponding" may also be referred to as that the clock terminal 21 of the memory card is mapped to the clock terminal 31 of the nano-SIM card. Specifically, the memory card clock terminal 21 and the nano SIM clock terminal 31 correspond/map to the same spring-loaded contact of the nano SIM card holder. The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located. Here, "corresponding" may also be referred to as that the first communication terminal 25 of the memory card is mapped to the terminal 32 of the nano-SIM reset signal. In particular, the first data transmission terminal 25 of the memory card and the nano SIM card reset signal terminal 32 correspond/map to the same spring-loaded contact of the nano SIM card holder. In addition, the output 21 of the clock signal of the memory card is located next to the first output 25 of the data transmission of the memory card and is isolated from it. In addition, the third output 27 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card and is isolated from it. The area on the body of the memory card in which the third communication terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the body of the nano SIM card in which the power supply terminal 33 of the nano SIM card is located. The third output 27 of the data transfer is located next to the first output 25 of the data transfer of the memory card and is isolated from it. Here, "corresponding" may also be referred to as that the third data transmission terminal 27 and the power supply terminal 22 of the memory card are mapped to the power supply terminal 33 of the nano-SIM card. In particular, the two terminals, that is, the third transmission terminal 27 and the power supply terminal 22 of the memory card, and the power supply terminal 33 of the nano-SIM card correspond/map to the same spring-loaded contact of the nano-SIM card holder. In addition, the area on the memory card body in which there are four terminals, that is, the memory card clock signal terminal 21, the first memory card data transmission terminal 25, the memory card third data transmission terminal 27, and the memory card power supply terminal 22 correspond to the area on the body of the nano SIM card, which houses the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano SIM card, so that the memory card provided in this embodiment and the nano SIM card can share one and the same nano-SIM card holder. It can be recognized that the third communication terminal 27 of the memory card and the power supply terminal 22 of the memory card are obtained by dividing the power supply terminal area 33 of the nano-SIM card into two terminals. The shapes and sizes of the third output 27 for data transmission of the memory card and output 22 power supply of the memory card are not limited. Additionally, the shapes and sizes of the memory card clock output 21 and the first memory card data transmission output 25 are not limited.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano SIM card in which the data transmission terminal 34 of the nano SIM card is located. The area on the body of the memory card in which the control signal terminal 23 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the voltage/input programming terminal 35 of the nano-SIM card is located. Additionally, the second output 26 of the data transmission of the memory card is located near and isolated from the output 23 of the control signal of the memory card. In addition, the fourth communication pin 28 of the memory card is adjacent to and isolated from the ground signal pin 24 of the memory card. The area on the body of the memory card in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located. The fourth output 28 of the data transmission is located next to the output 23 of the control signal of the memory card and is isolated from it. Additionally, the area on the memory card body in which there are four terminals, that is, the second data transmission terminal 26 of the memory card, the memory card control signal terminal 23, the fourth data transmission terminal 28 of the memory card, and the memory card ground signal terminal 24 correspond to the area on the body of the nano SIM card, in which the data transmission terminal 34, the programming/input signal terminal 35, and the ground signal terminal 36 of the nano SIM card are disposed such that the memory card provided in this embodiment and the nano SIM card can share the same nano SIM card holder. It can be recognized that the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are obtained by dividing the area of the ground signal terminal 36 of the nano-SIM card into two terminals. The shapes and sizes of the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are not limited. In addition, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card control signal terminal 23 are not limited.

Additionally, as in FIG. 3a shows a block diagram 2 of another memory card according to an embodiment of the present invention. As shown in FIG. 3a, the shape of the terminals (or contacts, or connection terminals) of the memory card is not limited. Leads (or contacts or connecting terminals) may be irregularly shaped. This can be seen from Fig. 3a that there is no gap between the pins (or contacts, or connecting terminals) of the memory card. Also, the memory card wire may be inside the memory card case. The wire is configured to connect the storage unit and the control unit. The wire is additionally configured to connect the control unit and the memory card interface. Fig. 3b is a diagram 3 of another memory card according to an embodiment of the present invention. As shown in FIG. 3b, there may be gaps between the leads (or contacts or connection terminals) of the memory card, and there may also be gaps between the leads (or contacts or connection terminals) and the edges of the memory card. You may find that the outputs of the memory card do not completely cover the surface of the memory card case. All of these gaps are areas on the surface of the memory card body. In addition, these regions may be configured to receive a wire. To be precise, the wire is routed between the leads (or contacts, or connection terminals) and between the leads (or contacts, or connection terminals) and the edges of the memory card. Additionally, the wire is configured to connect the storage unit and the control unit. The wire is additionally configured to connect the control unit and the memory card interface.

Additionally, Fig. 3c is a diagram 4 of another memory card according to an embodiment of the present invention. As shown in FIG. 3c, in the case of FIG. 3a, the ground signal pin 24 of the memory card has the shape shown in FIG. 3a. Referring to the shaded area in Fig. 3b. The shaded area in Fig. 3c shows pin 24 of the memory card ground signal.

With regard to the shapes and distances between the leads (or contacts or connection terminals) in the following embodiments, see the descriptions of the shapes and distances between the leads (or contacts or connection terminals) in this embodiment.

In the accompanying drawings of the following embodiments, the memory card clock signal pin 21 is marked as CLK, the memory card power supply pin 22 is marked as VCC, the memory card control signal pin 23 is marked as CMD, the memory card ground signal pin 24 is marked as GND, the first card data transmission pin 25 memory card is designated as D0, the second data transmission terminal 26 of the memory card is designated as D1, the third data transmission terminal 27 of the memory card is designated as D2, and the fourth data transmission terminal 28 of the memory card is designated as D3.

Fig. 4 is a diagram 1 of another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 4, the memory card includes four data transmission pins. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The third output 27 of the data transfer of the memory card is located next to and isolated from the output 21 of the clock signal of the memory card. The area on the body of the memory card in which the third data transmission terminal 27 and the clock terminal 21 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located. The output 21 of the clock signal of the memory card is located next to the first output 25 of the data transfer.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located.

The fourth output 28 of the data transfer of the memory card is located next to the second output 26 of the data transfer of the memory card and is isolated from it. The area on the body of the memory card in which the fourth communication terminal 28 and the second communication terminal 26 are located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano-SIM card body where the programming voltage/input signal terminal 35 of the nano-SIM card is located. The second output 26 of the data transmission is located next to the output 23 of the control signal of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal pin 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which there are four pins, that is, the third pin 27 of the data transmission of the memory card, the pin 21 of the clock signal of the memory card, the first pin 25 the data transmission of the memory card and the power supply terminal 22 of the memory card correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset terminal 32 and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the third memory card data transmission terminal 27 and the memory card clock terminal 21 are obtained by dividing the nano SIM card clock terminal 31 into two terminals. The shapes and sizes of the third memory card data transmission terminal 27 and the memory card clock output 21 are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card power supply terminal 22 are not limited.

The area on the body of the memory card in which four terminals are located, that is, the fourth terminal 28 of the data transmission of the memory card, the second terminal of the data transmission of the memory card 26, the terminal 23 of the control signal of the memory card and the terminal 24 of the ground signal of the memory card correspond to the area on the body of the nano card -SIM card, in which the data transmission terminal 34, the programming voltage/input terminal 35, and the ground signal terminal 36 of the nano-SIM card are arranged so that the memory card provided in this embodiment and the nano-SIM card can share one and the same nano-SIM card holder. For example, the area on the body of the memory card in which the above four terminals are located is the same as the area on the body of the nano-SIM card, which contains the data transmission terminal 34, the programming voltage/input terminal 35, and the ground signal terminal 36 of the nano-SIM card. SIM cards. It can be recognized that the fourth transmission terminal 28 of the memory card and the second transmission terminal 26 of the memory card are obtained by dividing the transmission terminal 34 area of the nano-SIM card into two terminals. The shapes and sizes of the fourth communication port 28 of the memory card and the second transmission port 26 of the memory card are not limited. Further, the shapes and sizes of the memory card control signal terminal 23 and the memory card ground signal terminal 24 are not limited.

Additionally, in FIG. 4a shows a diagram 2 of yet another memory card according to an embodiment of the present invention. As shown in FIG. 4a, the shape of the terminals (or contacts, or connection terminals) of the memory card is not limited. Leads (or contacts or connecting terminals) may be irregularly shaped. Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case.

In this embodiment, "corresponding" may also be referred to as a display relationship. For example, the area on the body of the memory card in which the first transmission terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset signal terminal 32 of the nano-SIM card is located, which means that the first transmission terminal 25 memory card is mapped to pin 32 of the nano-SIM reset signal. Specifically, the first data transmission terminal 25 of the memory card and the nano SIM card reset signal terminal 32 correspond to/map onto the same spring contact of the nano SIM card holder.

In FIG. 5 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 5, the memory card includes four data transmission pins. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the clock signal pin 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock signal pin 31 of the nano SIM card is located.

The first output 25 of the data transmission of the memory card is located next to the third output 27 of the data transmission of the memory card and is isolated from it. The area on the memory card body in which the first transmission terminal 25 and the third transmission terminal 27 are located corresponds to the area on the nano SIM card body in which the reset terminal 32 of the nano SIM card is located. The first output 25 data transmission is located next to the output 21 of the clock signal of the memory card.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located. The third output 27 of the data transfer is located next to the output 22 of the power supply of the memory card.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano SIM card in which the communication terminal 34 of the nano SIM card is located.

The output 23 of the control signal of the memory card is located next to the fourth output 28 of the data transmission of the memory card and is isolated from it. The area on the memory card body in which the memory card control signal terminal 23 and the fourth data transmission terminal 28 are located corresponds to the area on the nano SIM card body in which the nano SIM programming/input signal terminal 35 is located. The output 23 of the control signal of the memory card is located next to the second output 26 of the data transmission of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal pin 36 of the nano-SIM card is located. The fourth output 28 of the data transfer is located next to the output 24 of the ground signal of the memory card.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which there are four pins, i.e., the memory card clock signal pin 21, the first memory card data transmission pin 25, the third pin 27 the memory card data transmission terminal and the memory card power supply terminal 22 correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the nano-SIM card power supply terminal 33 are located. It can be recognized that the first memory card transmission terminal 25 and the third memory card transmission terminal 27 are obtained by dividing the nano SIM card reset signal terminal 32 into two terminals. The shapes and sizes of the first memory card data transmission port 25 and the third memory card data transmission port 27 are not limited. In addition, the shapes and sizes of the memory card clock terminal 21 and the memory card power supply terminal 22 are not limited.

The area on the body of the memory card in which there are four terminals, that is, the second terminal 26 of the data transmission of the memory card, the terminal 23 of the control signal of the memory card, the fourth terminal of the data transmission of the memory card 28 and the terminal 24 of the ground signal of the memory card correspond to the area on the body of the nano card -SIM card, in which there is a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card control signal terminal 23 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the programming voltage/input signal terminal area of the nano-SIM card 35 into two terminals. The shapes and sizes of the memory card control signal output 23 and the fourth data transmission output 28 of the memory card are not limited. In addition, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card ground signal terminal 24 are not limited.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case.

In this embodiment, "corresponding" may also be referred to as a display relationship. For example, the area on the memory card body where the memory card clock pin 21 is located corresponds to the area on the nano-SIM card body where the nano-SIM clock pin 31 is located, that the memory card clock pin 21 is mapped to the 31 nano-SIM clock. In particular, the memory card clock terminal 21 and the nano SIM clock terminal 31 correspond/map to the same spring contact of the nano SIM card holder.

In FIG. 6 is a diagram of another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 6, the memory card includes four data transmission pins. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the clock pin 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock pin 31 of the nano-SIM card is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located.

The third output 27 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card and is isolated from it. The area on the body of the memory card in which the third communication terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the body of the nano SIM card in which the power supply terminal 33 of the nano SIM card is located. Conclusion 22 of the power supply of the memory card is located next to the first output 25 of the data transmission of the memory card. The area of the power supply terminal 22 of the memory card is larger than the area of the third output 27 of the data transmission of the memory card.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano SIM card body where the programming voltage/input signal terminal 35 of the nano SIM card is located.

The fourth output 28 of the data transfer of the memory card is located next to the isolated output 24 of the ground signal of the memory card and is isolated from it. The area on the body of the memory card, in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located, corresponds to the area on the body of the nano-SIM card, in which the ground signal terminal 36 of the nano-SIM card is located. Pin 24 of the ground signal of the memory card is located next to pin 23 of the control signal of the memory card. The area of the ground signal terminal 24 of the memory card is larger than the area of the fourth transmission terminal 28 of the memory card.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which four pins are located, that is, the clock signal pin 21 of the memory card, the first data transfer pin 25 of the memory card, the power supply pin 22 of the memory card and the third transmission terminal 27 of the memory card correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the memory card power supply terminal 22 and the third data transmission terminal 27 of the memory card are obtained by dividing the power supply terminal 33 area of the nano-SIM card into two terminals. Conclusion 22 of the power supply of the memory card is located next to the first output 25 of the data transmission of the memory card. The shapes and sizes of the memory card power supply terminal 22 and the third communication terminal 27 of the memory card are not limited. In addition, the shapes and sizes of the memory card clock output 21 and the first data transmission output 25 of the memory card are not limited.

The area on the body of the memory card in which there are four terminals, that is, the second terminal 26 of the data transmission of the memory card, the terminal 23 of the control signal of the memory card, the terminal 24 of the ground signal of the memory card and the fourth terminal 28 of the data transmission of the memory card are located in the corresponding area on the body nano-SIM card, in which there is a communication terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card ground terminal 24 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the ground signal terminal 36 area of the nano SIM card into two terminals. In this embodiment, the ground signal pin 24 of the memory card is adjacent to the control signal pin 23 of the memory card. The shapes and sizes of the memory card ground signal pin 24 and the fourth data transmission pin 28 of the memory card are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card control signal terminal 23 are not limited.

In addition, the area of the memory card power supply terminal 22 is larger than that of the third communication terminal 27 of the memory card, and the area of the memory card ground signal terminal 24 is larger than the fourth communication terminal 28 of the memory card. Therefore, the third transmission terminal 27 of the memory card and the fourth transmission terminal 28 of the memory card, which are recently added, are placed on the outer side of the card as much as possible. In addition, the location on the memory card body of the central point of the memory card power supply outlet 22 corresponds to the location on the body of the nano SIM card of the nano SIM card power supply outlet 33 as much as possible; and the location on the memory card body of the center point of the memory card ground signal output 24 corresponds as far as possible to the location on the body of the nano SIM card of the nano SIM card ground signal output 36 . Therefore, the tolerance for the nano SD card can be increased.

For example, from the angle of view in FIG. 6 from right to left, the third communication terminal 27 of the memory card has a first edge and a second edge, and the memory card has a first side edge and a second side edge. The distance length from the first edge of the third communication terminal 27 of the memory card to the first side edge of the memory card is 1 millimeter with a tolerance of 0.1 millimeters. The length of the distance from the second edge of the third communication terminal 27 of the memory card to the first side edge of the memory card is 4.9 millimeters with a tolerance of 0.1 millimeters. The length of the distance from the first edge of the third data transmission terminal 27 of the memory card to the second side edge of the memory card is 11.3 millimeters with a tolerance of 0.1 millimeters. The distance length from the second edge of the third communication terminal 27 of the memory card to the second side edge of the memory card is 7.55 millimeters with a tolerance of 0.1 millimeters.

From the angle of view in FIG. 6 from right to left, the fourth data transmission terminal 28 of the memory card has a first end and a second end. The distance length from the first edge of the fourth communication terminal 28 of the memory card to the first side edge of the memory card is 7.55 millimeters with a tolerance of 0.1 millimeters. The distance length from the second edge of the fourth communication terminal 28 of the memory card to the first side edge of the memory card is 11.3 millimeters with a tolerance of 0.1 millimeters. The distance length from the first edge of the fourth communication terminal 28 of the memory card to the second side edge of the memory card is 4.9 millimeters with a tolerance of 0.1 millimeters. The distance length from the second edge of the fourth communication terminal 28 of the memory card to the second side edge of the memory card is 1 millimeter with a tolerance of 0.1 millimeters. For distance lengths from the first edge and the second edge of the other lead in FIG. 6 to the first side edge of the memory card and the second side edge of the memory card, respectively, refer to the above data.

From the angle of view in FIG. 6 from top to bottom, the memory card has a third side edge and a fourth side edge, the fourth data transmission terminal 28 of the memory card has a third edge and a fourth edge, the memory card ground signal terminal 24 has a third edge and a fourth edge, the memory card control signal terminal 23 has a third edge and the fourth edge and the second communication terminal 26 of the memory card have a third edge and a fourth edge. The maximum length of the distance from the third edge of the fourth communication terminal 28 of the memory card to the third side edge of the memory card is 0.2 millimeters, and the maximum length of the distance from the fourth edge of the fourth communication terminal 28 of the memory card to the third side edge of the memory card is 1.05 millimeters . The maximum distance length from the third edge of the memory card ground terminal 24 to the third side edge of the memory card is 1.4 millimeters, and the maximum distance length from the edge of the fourth ground terminal 24 of the memory card to the third side edge of the memory card is 2.6 millimeters tolerance of 0.1 mm. The maximum distance length from the third edge of the control signal terminal 23 of the memory card to the third side edge of the memory card is 3.35 mm with a tolerance of 0.1 mm; and the maximum distance length from the fourth edge of the control signal terminal 23 of the memory card to the third side edge of the memory card is 5.25 millimeters with a tolerance of 0.1 millimeters. The maximum length of the distance from the third edge of the second output 26 data transfer memory card to the third side edge of the memory card is 6.05 mm with a tolerance of 0.1 mm; and the maximum distance length from the fourth edge of the second communication terminal 26 of the memory card to the third side edge of the memory card is 7.95 millimeters with a tolerance of 0.1 millimeters. The distance between the third side edge of the memory card and the fourth side edge of the memory card is 8.8 mm with a tolerance of 0.1 mm.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case.

In this embodiment, "corresponding" may also be referred to as a display relationship. For example, the area on the body of the memory card in which the first transmission terminal 25 of the memory card is located corresponds to the area on the body of the nano SIM card in which the reset signal terminal 32 of the nano SIM card is located, which means that the first transmission terminal 25 The memory card data is mapped to pin 32 of the nano-SIM reset signal. In particular, the first data transmission terminal 25 of the memory card and the nano SIM card reset signal terminal 32 correspond/map to the same nano SIM card holder spring contact.

Fig. 7 is a block diagram of an additional memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 7, the memory card includes four data transmission pins. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the memory card body where the memory card clock pin 21 is located corresponds to the area on the nano-SIM card body where the nano-SIM clock pin 31 is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located.

The area on the body of the memory card, in which the power supply terminal 22 of the memory card is located, corresponds to the area on the body of the nano-SIM card, in which the power supply terminal 33 of the nano-SIM card is located.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano SIM card body where the programming voltage/input signal terminal 35 of the nano SIM card is located.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal pin 36 of the nano-SIM card is located.

The third output 27 of the data transmission of the memory card is located between the output 21 of the clock signal of the memory card and the second output 26 of the data transmission of the memory card. The third output 27 data transfer is isolated from the output 21 of the clock signal of the memory card and the second output 26 of the data transfer of the memory card. The center point of the third output 27 data transmission is located on the connection line between the center point output 21 of the clock signal of the memory card and the center point of the second output 26 data transmission.

The fourth output 28 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the output 24 of the ground signal of the memory card. The fourth communication pin 28 is isolated from the power supply pin 22 of the memory card and the ground signal pin 24 of the memory card. The center point of the fourth output 28 data transmission is located on the connecting line between the center point of the output 22 of the power supply of the memory card and the center point of the output 24 signal ground of the memory card.

In this embodiment, in particular, from the above pinout, it can be seen that the area on the body of the memory card in which the three pins are located, i.e., the memory card clock pin 21, the memory card's first data transmission pin 25, and the card power supply pin 22 memory in a corresponding area on the card body of the nano-SIM card, in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located.

The area on the memory card body in which three terminals are located, that is, the second data transmission terminal 26 of the memory card, the memory card control signal terminal 23, and the memory card ground signal terminal 24 correspond to the area on the body of the nano-SIM card in which the terminal is located. 34 data transmission, programming voltage/input signal terminal 35, and ground signal terminal 36 of the nano-SIM card.

The third output 27 of the data transmission of the memory card is located between the output 21 of the clock signal of the memory card and the second output 26 of the data transmission of the memory card. Possibly, the center point of the third output 27 of the data transmission of the memory card is located on the connection line between the center point of the output 21 of the clock signal of the memory card and the center point of the second output 26 of the memory data transmission. The fourth output 28 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the output 24 of the ground signal of the memory card. Possibly, the center point of the fourth output 28 of the data transmission of the memory card is located on the connection line between the center point of the output 22 of the power supply of the memory card and the center point of the output 24 of the ground signal of the memory card.

For example, based on the angle of view in FIG. 7, from left to right, the memory card clock terminal 21 has a first edge and a second edge, the memory card has a first side edge and a second side edge, the third memory card data transmission terminal 27 has a first edge and a second edge, and the memory card data transmission second terminal 26 has first edge and second edge. The maximum distance length from the first edge of the memory card clock lead 21 to the first side edge of the memory card is 1.00 millimeters, and the minimum distance length from the second edge of the memory card clock lead 21 to the first side edge of the memory card is 3.00 millimeters. The maximum distance length from the first edge of the third data transmission terminal 27 of the memory card to the first side edge of the memory card is 4.81 millimeters, and the minimum distance length from the second edge of the third communication terminal 27 of the memory card to the first side edge of the memory card is 6.81 mm . The maximum length of the distance from the first edge of the second communication terminal 26 of the memory card to the first side edge of the memory card is 8.62 millimeters, and the minimum length of the distance from the second edge of the second communication terminal 26 of the memory card to the first side edge of the memory card is 10.02 millimeters . The distance value between the first side edge of the memory card and the second side edge of the memory card is 12.30 mm with a tolerance of 0.1 mm. The length of the distance from the second communication terminal 26 of the memory card to the second side edge of the memory card is 1.65 millimeters with a tolerance of 0.1 millimeters. The mounting notch on the memory card is 45 degrees. For distance lengths from the first edge and the second edge of the other lead in FIG. 7 to the first side edge of the memory card and the second side edge of the memory card, respectively, refer to the above data.

Based on the angle of view in FIG. 7 from top to bottom, the memory card has a third side edge and a fourth side edge, the second data transmission terminal 26 of the memory card has a third edge and a fourth edge, the memory card control signal terminal 23 has a third edge and a fourth edge, the memory card ground signal terminal 24 has a third edge and a fourth edge, the fourth memory card data transmission terminal 28 has a third edge and a fourth edge, and the third memory card data transmission terminal 27 has a third edge and a fourth edge. The maximum distance length from the third edge of the fourth data transmission terminal 28 of the memory card to the third side edge of the memory card is 0.81 mm, and the minimum distance length from the fourth edge of the fourth communication terminal 28 of the memory card to the third side edge of the memory card is 2.51 mm . The maximum distance length from the third edge of the third data transmission terminal 27 of the memory card to the third side edge of the memory card is 6.29 mm, and the minimum distance length from the fourth edge of the third communication terminal 27 of the memory card to the third side edge of the memory card is 7.99 mm . The maximum distance length from the third edge of the memory card ground terminal 24 to the third side edge of the memory card is 1.01 millimeters, and the minimum distance length from the fourth edge of the memory card ground terminal 24 to the third side edge of the memory card is 2.71 millimeters. The maximum distance length from the third edge of the control signal terminal 23 of the memory card to the third side edge of the memory card is 3.55 mm, and the minimum distance length from the fourth edge of the control signal terminal 23 of the memory card to the third side edge of the memory card is 5.25 mm. The maximum distance length from the third edge of the second communication lead 26 of the memory card to the third side edge of the memory card is 6.09 mm, and the minimum distance length from the fourth edge of the second communication lead 26 of the memory card to the third side edge of the memory card is 7.79 mm . The distance value between the third side edge of the memory card and the fourth side edge of the memory card is 8.80 mm with a tolerance of 0.1 mm.

In addition, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps and therefore the memory card wire may be inside the memory card case.

In this embodiment, "corresponding" may also be referred to as a display relationship. For example, the area on the memory card body where the memory card power supply terminal 22 is located corresponds to the area on the nano SIM card body where the nano SIM card power supply terminal 33 is located, which means that the memory card power supply terminal 22 is mapped to the 33 nano-SIM card power supply. Specifically, the power supply terminal 22 of the memory card and the power supply terminal 33 of the nano SIM card correspond/map to the same spring contact of the nano SIM card holder.

Fig. 8 is a diagram of another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 8, the memory card includes four data transmission pins. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano-SIM card body where the nano-SIM card reset signal terminal 32 is located.

The third output 27 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card and is isolated from it. The area on the body of the memory card in which the third data transmission terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the body of the nano SIM card in which the power supply terminal 33 of the nano SIM card is located. The third output 27 of the data transmission is located next to the output 23 of the control signal of the memory card.

The area on the body of the memory card in which the clock signal terminal 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data transmission terminal 34 of the nano-SIM card is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the terminal 35 of the programming voltage/input signal of the nano-SIM card is located.

The fourth communication pin 28 of the memory card is adjacent to and isolated from the ground signal pin 24 of the memory card. The area on the body of the memory card in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located. The fourth output 28 data transfer is located next to the first output 25 data transfer of the memory card.

In this embodiment, in particular, the area on the body of the memory card in which there are four terminals, that is, the second data transmission terminal 26 of the memory card, the memory card control signal terminal 23, the third data transmission terminal 27 of the memory card, and the power supply terminal 22 of the card memory that correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the third communication terminal 27 of the memory card and the power supply terminal 22 of the memory card are obtained by dividing the power supply terminal area 33 of the nano-SIM card into two terminals. The shapes and sizes of the third output 27 of the data transmission of the memory card and output 22 of the power supply of the memory card are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card control signal terminal 23 are not limited.

In addition, the area on the memory card body in which four terminals are located, that is, the memory card clock terminal 21, the first memory card data transmission terminal 25, the memory card fourth data transmission terminal 28, and the memory card ground signal terminal 24 correspond to the area on a nano-SIM card case, which contains a data communication terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are obtained by dividing the area of the ground signal terminal 36 of the nano-SIM card into two terminals. The shapes and sizes of the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are not limited. Additionally, the shapes and sizes of the memory card clock output 21 and the first memory card data transmission output 25 are not limited.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case.

In this embodiment, "corresponding" may also be referred to as a display relationship. For example, the area on the body of the memory card in which the second transmission terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock signal terminal 31 of the nano-SIM card is located, which means that the second transmission terminal 26 of the data memory cards map to the clock pin 31 of the nano-SIM card. In particular, the second communication pin 26 of the memory card and the clock pin 31 of the nano-SIM card correspond/map to the same spring contact of the nano-SIM card holder.

Fig. 9 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 9, the memory card includes four data transmission pins. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The third output 27 of the data transfer of the memory card is located next to and isolated from the output 21 of the clock signal of the memory card. The area on the body of the memory card in which the third data transmission terminal 27 and the clock terminal 21 of the memory card are located corresponds to the area on the body of the nano SIM card in which the clock terminal 31 of the nano SIM card is located.

The area on the memory card body where the memory card control signal pin 23 is located corresponds to the area on the nano-SIM card body where the nano-SIM card reset signal pin 32 is located. The memory card clock pin is located next to the memory card control pin 23.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located.

The fourth output 28 of the data transfer of the memory card is adjacent to the second output 26 of the data transfer of the memory card and is isolated from it. The area on the body of the memory card in which the fourth data output 28 and the second data output 26 are located corresponds to the area on the body of the nano SIM card in which the data output 34 of the nano SIM card is located.

The area on the memory card body in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano SIM card in which the programming voltage/input signal terminal of the nano SIM card 35 is located. The second output 26 data transmission is located next to the first output 25 data transmission.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be learned that there is an area on the body of the memory card in which four pins are located, that is, the third pin 27 of the data transmission of the memory card, the pin 21 of the clock signal of the memory card, the pin 23 of the signal memory card control and the memory card ground signal terminal 24 correspond to the area on the body of the nano-SIM card where the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the third memory card data transmission terminal 27 and the memory card clock terminal 21 are obtained by dividing the nano SIM card clock terminal 31 into two terminals. The shapes and sizes of the third memory card data transmission terminal 27 and the memory card clock output 21 are not limited. Further, the shapes and sizes of the memory card control signal terminal 23 and the memory card ground signal terminal 24 are not limited.

An area on the body of the memory card in which four terminals are located, that is, the fourth data transmission terminal 28 of the memory card, the second data transmission terminal 26 of the memory card, the first data transmission terminal 25 of the memory card, and the power supply terminal 22 of the memory card, which corresponds to the area on the body nano-SIM card, in which there is a communication terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth transmission terminal 28 of the memory card and the second transmission terminal 26 of the memory card are obtained by dividing the transmission terminal 34 area of the nano-SIM card into two terminals. The shapes and sizes of the fourth communication port 28 of the memory card and the second transmission port 26 of the memory card are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card power supply terminal 22 are not limited.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case.

In this embodiment, "corresponding" may also be referred to as a display relationship. For example, the area on the body of the memory card in which pin 24 of the ground signal of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located, that pin 24 of the ground signal of the memory card is mapped to pin 33 power supply of the nano-SIM card. In particular, the ground signal terminal 24 of the memory card and the power supply terminal 3 of the nano SIM card correspond/map to the same spring contact of the nano SIM card holder.

Fig. 10 is a block diagram of yet another optional memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 10, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the memory card body in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the nano-SIM clock terminal 31 is located.

The first output 25 of the data transmission of the memory card is located next to the third output 27 of the data transmission of the memory card and is isolated from it. The area on the memory card body in which the first transmission terminal 25 and the third transmission terminal 27 are located corresponds to the area on the nano SIM card body in which the nano SIM card reset signal terminal 32 is located. The first output 25 data transfer is located next to the output 26 data transfer of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located.

The area on the body of the memory card in which the clock signal terminal 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data transmission terminal 34 of the nano-SIM card is located.

The output 23 of the control signal of the memory card is located next to the fourth output 28 of the data transmission of the memory card and is isolated from it. The area on the memory card body in which the memory card control signal terminal 23 and the fourth data transmission terminal 28 are located corresponds to the area on the nano SIM card body in which the programming/input signal terminal of the nano SIM card 35 is located. The output 23 of the control signal of the memory card is located next to the output 21 of the clock signal of the memory card.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which four pins are located, that is, the second pin 26 of the data transmission of the memory card, the first pin 25 of the data of the memory card, the third pin 27 data transmission of the memory card and terminal 24 of the signal ground signal of the memory card, which correspond to the area on the body of the nano-SIM card, in which the clock signal terminal 31, the reset signal terminal 32 and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the first memory card data transmission terminal 25 and the third memory card data transmission terminal 27 are obtained by dividing the nano SIM card reset signal terminal 32 into two terminals. The shapes and sizes of the first memory card data transmission terminal 25 and the third memory card data transmission terminal 27 are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card ground signal terminal 24 are not limited.

The area on the memory card body in which four terminals are located, that is, the memory card clock signal terminal 21, the memory card control signal terminal 23, the fourth data transmission terminal 28 of the memory card, and the memory card power supply terminal 22 in the corresponding area on the nano-card body A SIM card in which a data communication terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM are located. It can be recognized that the memory card control signal terminal 23 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the programming voltage/input signal terminal area of the nano-SIM card 35 into two terminals. The shapes and sizes of the memory card control signal output 23 and the fourth data transmission output 28 of the memory card are not limited. Additionally, the shapes and sizes of the memory card clock output 21 and the memory card power supply terminal 22 are not limited.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 11 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 11, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal pin 23 is located corresponds to the area on the nano-SIM card body where the nano-SIM card reset signal pin 32 is located.

The third output 27 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card and is isolated from it. The area on the body of the memory card in which the third data transmission terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located. The output 22 of the power supply of the memory card is located next to the output 23 of the control signal of the memory card. The area of the power supply terminal 22 of the memory card is larger than the area of the third output 27 of the data transmission of the memory card.

The area on the body of the memory card in which the clock signal terminal 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data transmission terminal 34 of the nano-SIM card is located.

The area on the body of the memory card in which the first data transmission terminal of the memory card is located corresponds to the area on the body of the nano-SIM card in which the terminal 35 of the programming voltage/input signal of the nano-SIM card is located.

The fourth communication pin 28 of the memory card is adjacent to and isolated from the isolated ground signal pin 24 of the memory card. The area on the body of the memory card, in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located, corresponds to the area on the body of the nano-SIM card, in which the ground signal terminal 36 of the nano-SIM card is located. The ground signal pin 24 of the memory card is located next to the first data transfer pin of the memory card. The area of the ground signal terminal 24 of the memory card is larger than the area of the fourth transmission terminal 28 of the memory card.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which four pins are located, that is, the second pin 26 of the data transmission of the memory card, the pin 23 of the control signal of the memory card, the pin 22 of the power supply of the memory card and the third transmission terminal 27 of the memory card correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the memory card power supply terminal 22 and the third data transmission terminal 27 of the memory card are obtained by dividing the power supply terminal area 33 of the nano-SIM card into two terminals. The output 22 of the power supply of the memory card is located next to the output 23 of the control signal of the memory card. The shapes and sizes of the memory card power supply terminal 22 and the third data transmission terminal 27 of the memory card are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card control signal terminal 23 are not limited.

The area on the body of the memory card in which four pins are located, that is, the pin 21 of the clock signal of the memory card, the first pin 25 of the data transfer of the memory card, the pin 24 of the ground signal of the memory card and the fourth pin 28 of the data of the data of the memory card are located in the corresponding area on the case nano-SIM card, in which there is a communication terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card ground terminal 24 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the ground signal terminal 36 area of the nano-SIM card into two terminals. In this embodiment, the ground signal pin 24 of the memory card is adjacent to the first data pin 25 of the memory card. The shapes and sizes of the memory card ground signal pin 24 and the fourth data transmission pin 28 of the memory card are not limited. Additionally, the shapes and sizes of the memory card clock output 21 and the first memory card data transmission output 25 are not limited.

In addition, the area of the memory card power supply terminal 22 is larger than that of the third communication terminal 27 of the memory card, and the area of the memory card ground signal terminal 24 is larger than the fourth communication terminal 28 of the memory card. Therefore, the third transmission terminal 27 of the memory card and the fourth transmission terminal 28 of the memory card, which are recently added, are placed on the outer side of the card as much as possible. Further, the location on the memory card body of the center power supply outlet 22 of the memory card corresponds to the location on the body of the nano SIM card of the nano SIM card power supply output 33 as much as possible; and the location on the memory card body of the center point of the memory card ground signal output 24 corresponds as far as possible to the location on the body of the nano SIM card of the nano SIM card ground signal output 36 . Therefore, the tolerance for the nano SD card can be increased.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 12 is a diagram of another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 12, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the memory card body where the memory card clock pin 21 is located corresponds to the area on the nano-SIM card body where the nano-SIM clock pin 31 is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body in which the memory card control signal terminal 23 is located corresponds to the area on the nano SIM card body in which the programming voltage/input signal terminal of the nano SIM card 35 is located.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal pin 36 of the nano-SIM card is located.

The fourth output 28 of the data transmission of the memory card is located between the output 21 of the clock signal of the memory card and the second output 26 of the data transmission of the memory card. The fourth output 28 data transfer is isolated from the output 21 of the clock signal of the memory card and the second output 26 of the data transfer of the memory card. The center point of the fourth output 28 data transmission is located on the connection line between the center point output 21 of the clock signal of the memory card and the center point of the second output 26 data transmission.

The third output 27 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the output 24 of the ground signal of the memory card. The third communication pin 27 is isolated from the power supply pin 22 of the memory card and the ground signal pin 24 of the memory card. The center point of the third output 27 data transmission is located on the connection line between the center point of the output 22 of the power supply of the memory card and the center point of the output 24 of the ground signal of the memory card.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which there are three pins, that is, the clock signal pin 21 of the memory card, the first data pin 25 of the memory card, and the power pin 22 memory cards are located in a corresponding area on the nano-SIM card body, in which there is a clock signal terminal 31, a reset signal terminal 32, and a power supply terminal 33 of the nano-SIM card.

The area on the memory card body in which there are three terminals, that is, the second data transmission terminal 26 of the memory card, the memory card control signal terminal 23, and the memory card ground signal terminal 24 correspond to the area on the body of the nano-SIM card in which the terminal is located. 34 data transmission, programming voltage/input signal terminal 35, and ground signal terminal 36 of the nano-SIM card.

The fourth output 28 of the data transmission of the memory card is located between the output 21 of the clock signal of the memory card and the second output 26 of the data transmission of the memory card. Possibly, the center point of the fourth output 28 of the memory card data transmission is located on the connection line between the center point of the output 21 of the clock signal of the memory card and the center point of the second output 26 of the memory data transmission. The third output 27 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the output 24 of the ground signal of the memory card. Possibly, the center point of the third output 27 of the data transmission of the memory card is located on the connection line between the center point of the output 22 of the power supply of the memory card and the center point of the output 24 of the ground signal of the memory card.

In addition, in this embodiment, there may be gaps between the leads (or contacts, or connection terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 13 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 13, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The area on the memory card body where the memory card clock pin 21 is located corresponds to the area on the nano-SIM card body where the nano-SIM reset signal pin 32 is located.

The third output 27 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card and is isolated from it. The area on the body of the memory card in which the third data transmission terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located. The third output 27 data transmission is located next to the output 21 of the clock signal of the memory card.

The area on the body of the memory card in which the control signal terminal 23 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data transmission terminal 34 of the nano-SIM card is located.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the programming voltage/input signal terminal of the nano-SIM card 35 is located.

The fourth communication pin 28 of the memory card is adjacent to and isolated from the ground signal pin 24 of the memory card. The area on the body of the memory card, in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located, corresponds to the area on the body of the nano-SIM card, in which the ground signal terminal 36 of the nano-SIM card is located. The fourth output 28 of the data transfer is located next to the output 26 of the data transfer of the memory card.

In this embodiment, in particular, from the above pinout, it can be known which area on the body of the memory card in which the four pins are located, that is, the first pin 25 of the memory card data transmission, the clock pin 21 of the memory card, the third pin 27 of the transmission the memory card data and the memory card power supply terminal 22 correspond to an area on the nano SIM card body in which the clock signal terminal 31, the reset signal terminal 32, and the nano SIM card power supply terminal 33 are located. It can be recognized that the third memory card data transmission terminal 27 and the memory card power supply terminal 22 are obtained by dividing the power supply terminal area 33 of the nano-SIM card into two terminals. The shapes and sizes of the third output 27 of the data transmission of the memory card and output 22 of the power supply of the memory card are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card clock output 21 are not limited.

The area on the memory card body that contains four terminals, that is, the memory card control signal terminal 23, the second memory card data transmission terminal 26, the memory card data transmission fourth terminal 28, and the memory card ground signal terminal 24, correspond to the area on the nano card body -SIM card, in which there is a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are obtained by dividing the area of the ground signal terminal 36 of the nano-SIM card into two terminals. The shapes and sizes of the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are not limited. Further, the shapes and sizes of the memory card control signal output 23 and the second memory card data transmission output 26 are not limited.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 14 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 14, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The area on the memory card body where the memory card clock pin 21 is located corresponds to the area on the nano-SIM card body where the nano-SIM reset signal pin 32 is located.

The third output 27 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card and is isolated from it. The area on the body of the memory card in which the third data transmission terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the body of the nano SIM card in which the power supply terminal 33 of the nano SIM card is located. The output 22 of the power supply of the memory card is located next to the output 21 of the clock signal of the memory card. The area of the power supply terminal 22 of the memory card is larger than the area of the third output 27 of the data transmission of the memory card.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano-SIM card body where the data transmission terminal 34 of the nano-SIM card is located.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the programming voltage/input signal terminal of the nano-SIM card 35 is located.

The fourth communication pin 28 of the memory card is adjacent to and isolated from the ground signal pin 24 of the memory card. The area on the body of the memory card in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located. The output 24 of the ground signal of the memory card is located next to the second output 26 of the data transmission of the memory card. The area of the ground signal terminal 24 of the memory card is larger than the area of the fourth transmission terminal 28 of the memory card.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which there are four pins, that is, the first data transfer pin 25 of the memory card, the clock signal pin 21 of the memory card, the power supply pin 22 of the memory card and the third transmission terminal 27 of the memory card correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the memory card power supply terminal 22 and the third data transmission terminal 27 of the memory card are obtained by dividing the power supply terminal 33 area of the nano-SIM card into two terminals. The output 22 of the power supply of the memory card is located next to the output 21 of the clock signal of the memory card. The shapes and sizes of the memory card power supply terminal 22 and the third communication terminal 27 of the memory card are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card clock output 21 are not limited.

The area on the body of the memory card in which there are four pins, that is, the pin 23 of the control signal of the memory card, the second pin 26 of the data transmission of the memory card, the pin 24 of the ground signal of the memory card and the fourth pin 28 of the data transmission of the memory card are located in the corresponding area on the case nano-SIM card, in which there is a communication terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card ground terminal 24 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the ground signal terminal 36 area of the nano SIM card into two terminals. In this embodiment, the ground signal pin 24 of the memory card is adjacent to the second data pin 26 of the memory card. The shapes and sizes of the memory card ground signal pin 24 and the fourth data transmission pin 28 of the memory card are not limited. Further, the shapes and sizes of the memory card control signal output 23 and the second memory card data transmission output 26 are not limited.

In addition, the area of the memory card power supply terminal 22 is larger than the area of the third communication terminal 27 of the memory card, the area of the memory card ground signal terminal 24 is larger than the fourth communication terminal 28 of the memory card. Therefore, the third data transmission terminal 27 of the memory card and the fourth data transmission terminal 28 of the memory card, which are newly added, are located as far as possible on the outer side of the card. Further, the arrangement on the memory card body of the central point of the memory card power supply outlet 22 corresponds to the position on the body of the nano SIM card of the nano SIM card power supply outlet 33 as much as possible; and the location on the memory card body of the center point of the memory card ground signal output 24 corresponds to the location as far as possible on the nano SIM card body of the nano SIM card ground signal output 36 . Therefore, the tolerance for the nano SD card can be increased.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 15 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 15, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The third output 27 of the data transfer of the memory card is located next to and isolated from the output 21 of the clock signal of the memory card. The area on the memory card body in which the third data transmission terminal 27 and the clock signal terminal 21 of the memory card are located corresponds to the area on the nano SIM card body in which the nano SIM card clock terminal 31 is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located. The third output 27 data transmission of the memory card is located next to the first output 25 data transmission.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located.

The fourth output 28 of the data transfer of the memory card is adjacent to the second output 26 of the data transfer of the memory card and is isolated from it. The area on the body of the memory card in which the fourth communication terminal 28 and the second communication terminal 26 are located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the body of the memory card in which the control signal terminal 23 of the memory card is located corresponds to the area on the body of the nano SIM card in which the terminal 35 of the programming voltage/input signal of the nano SIM card is located. The fourth output 28 of the data transmission of the memory card is located next to the output 23 of the control signal of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal pin 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which there are four pins, that is, the memory card clock signal pin 21, the third memory card data transmission pin 27, the first pin 25 the memory card data transmission terminal and the memory card power supply terminal 22 corresponding to the areas on the nano SIM card body, in which the clock signal terminal 31, the reset signal terminal 32 and the nano SIM card power supply terminal 33 are located. It can be recognized that the third memory card data transmission pin 27 and the memory card clock pin 21 are obtained by dividing the nano-SIM clock pin 31 into two pins. The shapes and sizes of the third memory card data transmission terminal 27 and the memory card clock output 21 are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card power supply terminal 22 are not limited.

The area on the memory card body in which four terminals are located, that is, the second data transmission terminal 26 of the memory card, the fourth data transmission terminal 28 of the memory card, the control signal terminal 23 of the memory card, and the ground signal terminal 24 of the memory card correspond to the area on the body of the nano card -SIM card, in which the data transmission terminal 34, the programming voltage/input signal terminal 35, and the ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth transmission terminal 28 of the memory card and the second transmission terminal 26 of the memory card are obtained by dividing the transmission terminal 34 area of the nano-SIM card into two terminals. The shapes and sizes of the fourth communication port 28 of the memory card and the second transmission port 26 of the memory card are not limited. Further, the shapes and sizes of the memory card control signal terminal 23 and the memory card ground signal terminal 24 are not limited.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 16 is a diagram of another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 16, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The third output 27 of the data transfer of the memory card is located next to and isolated from the output 21 of the clock signal of the memory card. The area on the body of the memory card in which the third data transmission terminal 27 and the clock terminal 21 of the memory card are located corresponds to the area on the body of the nano SIM card in which the clock terminal 31 of the nano SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano-SIM card body where the nano-SIM card reset signal terminal 32 is located. The third output 27 of the data transmission of the memory card is located next to the output 23 of the control signal of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located.

The fourth output 28 of the data transfer of the memory card is adjacent to the second output 26 of the data transfer of the memory card and is isolated from it. The area on the memory card body in which the fourth data transmission terminal 28 and the second data transmission terminal 26 are located corresponds to the area on the nano-SIM card body in which the data transmission terminal 34 of the nano-SIM card is performed.

The area on the memory card body in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano SIM card in which the programming voltage/input signal terminal of the nano SIM card 35 is located. The fourth output 28 data transfer of the memory card is located next to the first output 25 data transfer.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which there are four pins, that is, the clock signal pin 21 of the memory card, the third pin 27 of the data transmission of the memory card, the signal pin 23 memory card control and the memory card ground signal terminal 24 correspond to the area on the body of the nano-SIM card where the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the third memory card data transmission pin 27 and the memory card clock pin 21 are obtained by dividing the nano-SIM clock pin 31 into two pins. The shapes and sizes of the third memory card data transmission terminal 27 and the memory card clock output 21 are not limited. Further, the shapes and sizes of the memory card control signal terminal 23 and the memory card ground signal terminal 24 are not limited.

The area on the body of the memory card in which there are four terminals, that is, the second data transmission terminal 26 of the memory card, the fourth data transmission terminal 28 of the memory card, the first data transmission terminal 25 of the memory card, and the power supply terminal 22 of the memory card, which corresponds to the area on the body nano-SIM card, in which there are a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth transmission terminal 28 of the memory card and the second transmission terminal 26 of the memory card are obtained by dividing the transmission terminal 34 area of the nano-SIM card into two terminals. The shapes and sizes of the fourth communication port 28 of the memory card and the second transmission port 26 of the memory card are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card power supply terminal 22 are not limited.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 17 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 17, the memory card includes four data transmission terminals. The four communication outputs are the first communication output 25, the second communication output 26, the third communication output 27, and the fourth communication output 28.

The third output 27 of the data transfer of the memory card is located next to and isolated from the output 21 of the clock signal of the memory card. The area on the body of the memory card in which the third data transmission terminal 27 and the clock terminal 21 of the memory card are located corresponds to the area on the body of the nano SIM card in which the clock terminal 31 of the nano SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano SIM card body where the nano SIM card reset signal terminal 32 is located. The third output 27 of the data transmission of the memory card is located next to the output 23 of the control signal of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located.

The fourth output 28 of the data transfer of the memory card is adjacent to the second output 26 of the data transfer of the memory card and is isolated from it. The area on the body of the memory card in which the fourth communication terminal 28 and the second communication terminal 26 are located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the terminal 35 of the programming voltage/input signal of the nano-SIM card is located. The second output 26 data transmission of the memory card is located next to the first output 25 data transmission.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which there are four pins, that is, the clock signal pin 21 of the memory card, the third pin 27 of the data transmission of the memory card, the signal pin 23 memory card control and the memory card ground signal terminal 24 correspond to the area on the body of the nano-SIM card where the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the third memory card data transmission terminal 27 and the memory card clock terminal 21 are obtained by dividing the nano SIM card clock terminal 31 into two terminals. The shapes and sizes of the third memory card data transmission terminal 27 and the memory card clock output 21 are not limited. Further, the shapes and sizes of the memory card control signal terminal 23 and the memory card ground signal terminal 24 are not limited.

An area on the memory card body in which there are four terminals, i.e., the fourth data transmission terminal 28 of the memory card, the second data transmission terminal 26 of the memory card, the first communication terminal 25 of the memory card, and the power supply terminal 22 of the memory card, which corresponds to the area on the card body nano-SIM card, in which there is a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth transmission terminal 28 of the memory card and the second transmission terminal 26 of the memory card are obtained by dividing the transmission terminal 34 area of the nano-SIM card into two terminals. The shapes and sizes of the fourth communication port 28 of the memory card and the second transmission port 26 of the memory card are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card power supply terminal 22 are not limited.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 18 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 18, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The third output 27 of the data transfer of the memory card is located next to and isolated from the output 21 of the clock signal of the memory card. The area on the body of the memory card in which the third data transmission terminal 27 and the clock terminal 21 of the memory card are located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal pin 23 is located corresponds to the area on the nano-SIM card body where the nano-SIM card reset signal pin 32 is located. The output 21 of the clock signal of the memory card is located next to the output 23 of the control signal of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located.

The fourth output 28 of the data transfer of the memory card is adjacent to the second output 26 of the data transfer of the memory card and is isolated from it. The area on the body of the memory card in which the fourth communication terminal 28 and the second communication terminal 26 are located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano SIM card in which the programming voltage/input signal terminal of the nano SIM card 35 is located. The fourth output 28 data transfer of the memory card is located next to the first output 25 data transfer.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be learned that there is an area on the body of the memory card in which four pins are located, that is, the third pin 27 of the data transmission of the memory card, the pin 21 of the clock signal of the memory card, the pin 23 of the signal memory card control and the memory card ground signal terminal 24, which correspond to the area on the body of the nano-SIM card where the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the third memory card data transmission terminal 27 and the memory card clock terminal 21 are obtained by dividing the nano SIM card clock terminal 31 into two terminals. The shapes and sizes of the third memory card data transmission terminal 27 and the memory card clock output 21 are not limited. Further, the shapes and sizes of the memory card control signal terminal 23 and the memory card ground signal terminal 24 are not limited.

An area on the body of the memory card in which there are four terminals, i.e., the second data transmission terminal 26 of the memory card, the fourth data transmission terminal 28 of the memory card, the first data transmission terminal 25 of the memory card, and the power supply terminal 22 of the memory card, which corresponds to the area on the body nano-SIM card, in which there are a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth transmission terminal 28 of the memory card and the second transmission terminal 26 of the memory card are obtained by dividing the transmission terminal 34 area of the nano-SIM card into two terminals. The shapes and sizes of the fourth communication port 28 of the memory card and the second transmission port 26 of the memory card are not limited. Further, the shapes and sizes of the first memory card data transmission terminal 25 and the memory card power supply terminal 22 are not limited.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 19 is a diagram of another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 19, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the clock signal pin 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock signal pin 31 of the nano SIM card is located.

The first output 25 of the data transmission of the memory card is located next to the third output 27 of the data transmission of the memory card and is isolated from it. The area on the memory card body in which the first transmission terminal 25 and the third transmission terminal 27 are located corresponds to the area in the nano-SIM card body in which the nano-SIM reset signal terminal 32 is located. The third output 27 of the data transmission of the memory card is located next to the output 21 of the clock signal of the memory card.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The output 23 of the control signal of the memory card is located next to the fourth output 28 of the data transmission of the memory card and is isolated from it. The area on the body of the memory card, in which the control signal terminal 23 of the memory card and the fourth data transmission terminal 28 are located, corresponds to the area on the body of the nano-SIM card, in which the programming voltage/input signal terminal of the nano-SIM card 35 is located. The fourth output 28 of the data transmission of the memory card is located next to the second output 26 of the data transmission of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal pin 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which four pins are located, i.e., the memory card clock signal pin 21, the third memory card data transmission pin 27, the first pin 25 the memory card data transmission terminal and the memory card power supply terminal 22 corresponding to the areas on the nano SIM card body, in which the clock signal terminal 31, the reset signal terminal 32 and the nano SIM card power supply terminal 33 are located. It can be recognized that the first memory card data transmission terminal 25 and the third memory card data transmission terminal 27 are obtained by dividing the nano SIM card reset signal terminal 32 into two terminals. The shapes and sizes of the first memory card data transmission terminal 25 and the third memory card data transmission terminal 27 are not limited. Additionally, the shapes and sizes of the memory card clock output 21 and the memory card power supply terminal 22 are not limited.

The area of the memory card body in which four terminals are located, i.e., the second transmission terminal 26 of the memory card, the fourth transmission terminal 28 of the memory card, the control signal terminal 23 of the memory card, and the terminal 24 of the ground signal of the memory card, corresponds to the area on the body of the nano card. -SIM card, in which there is a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card control signal terminal 23 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the programming voltage/input signal terminal area of the nano-SIM card 35 into two terminals. The shapes and sizes of the memory card control signal output 23 and the fourth data transmission output 28 of the memory card are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card ground signal terminal 24 are not limited.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 20 is a schematic block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 20, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The first output 25 of the data transfer of the memory card is located next to the third output 27 of the data transfer of the memory card and is isolated from it. The area on the memory card body in which the first transmission terminal 25 and the third transmission terminal 27 are located corresponds to the area in the nano-SIM card body in which the nano-SIM reset signal terminal 32 is located. The third output 27 data transfer of the memory card is located next to the output 26 data transfer of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located.

The area on the body of the memory card in which the clock signal terminal 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data transmission terminal 34 of the nano-SIM card is located.

The output 23 of the control signal of the memory card is located next to the fourth output 28 of the data transmission of the memory card and is isolated from it. The area on the body of the memory card, in which the control signal terminal 23 of the memory card and the fourth data transmission terminal 28 are located, corresponds to the area on the body of the nano-SIM card, in which the programming voltage/input signal terminal of the nano-SIM card 35 is located. The fourth output 28 of the data transmission of the memory card is located next to the output 21 of the clock signal of the memory card.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located.

In this embodiment, in particular, from the above pinout, it can be seen that in an area on the body of the memory card, there is an area in which four pins are located, that is, the second pin 26 of the data transmission of the memory card, the third pin 27 of the data of the memory card, the first data transmission terminal 25 of the memory card and the ground signal terminal 24 of the memory card correspond to an area on the body of the nano-SIM card, in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the first memory card transmission terminal 25 and the third memory card transmission terminal 27 are obtained by dividing the nano SIM card reset signal terminal 32 into two terminals. The shapes and sizes of the first memory card data transmission terminal 25 and the third memory card data transmission terminal 27 are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card ground signal terminal 24 are not limited.

The area on the memory card body in which four pins are located, that is, the memory card clock signal pin 21, the fourth memory card data transmission pin 28, the memory card control signal pin 23, and the memory card power supply pin 22 are located in the corresponding area on the nano card case. -SIM card, in which there is a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card control signal terminal 23 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the programming voltage/input signal terminal area of the nano-SIM card 35 into two terminals. The shapes and sizes of the memory card control signal output 23 and the fourth data transmission output 28 of the memory card are not limited. In addition, the shapes and sizes of the memory card clock terminal 21 and the memory card power supply terminal 22 are not limited.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 21 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 21, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The first output 25 of the data transmission of the memory card is located next to the third output 27 of the data transmission of the memory card and is isolated from it. The area on the memory card body in which the first transmission terminal 25 and the third transmission terminal 27 are located corresponds to the area on the nano SIM card body in which the nano SIM card reset signal terminal 32 is located. The first output 25 data transfer is located next to the output 26 data transfer of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located. The third output 27 of the data transmission of the memory card is located next to the output 24 of the ground signal of the memory card.

The area on the body of the memory card in which the clock signal terminal 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data transmission terminal 34 of the nano-SIM card is located.

The output 23 of the control signal of the memory card is located next to the fourth output 28 of the data transmission of the memory card and is isolated from it. The area on the memory card body, in which the control signal terminal 23 of the memory card and the fourth data transmission terminal 28 are located, corresponds to the area on the body of the nano-SIM card, in which the programming/input signal terminal of the nano-SIM card 35 is located. The fourth output 28 of the data transfer of the memory card is located next to the output 21 of the clock signal of the memory card.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located. The output 23 of the control signal of the memory card is connected to the output 22 of the power supply of the memory card.

In this embodiment, in particular, from the above pinout, it can be known which area on the body of the memory card has four pins, that is, the second pin 26 of the memory card data transmission, the first pin 25 of the memory card data, the third pin 27 of the card data memory card and the memory card ground terminal 24 correspond to an area on the body of the nano SIM card, in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano SIM card are located. It can be recognized that the first memory card transmission terminal 25 and the third memory card transmission terminal 27 are obtained by dividing the nano SIM card reset signal terminal 32 into two terminals. The shapes and sizes of the first memory card data transmission terminal 25 and the third memory card data transmission terminal 27 are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card ground signal terminal 24 are not limited.

The area on the memory card body in which four pins are located, that is, the memory card clock signal pin 21, the fourth memory card data transmission pin 28, the memory card control signal pin 23, and the memory card power supply pin 22 are located in the corresponding area on the nano card case. -SIM card, in which there is a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card control signal terminal 23 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the programming voltage/input signal terminal area of the nano-SIM card 35 into two terminals. The shapes and sizes of the memory card control signal output 23 and the fourth data transmission output 28 of the memory card are not limited. Further, the shapes and sizes of the memory card clock output 21 and the memory card power supply terminal 22 are not limited.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 22 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 22, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock terminal 31 of the nano-SIM card is located.

The first output 25 of the data transmission of the memory card is located next to the third output 27 of the data transmission of the memory card and is isolated from it. The area on the memory card body in which the first transmission terminal 25 and the third transmission terminal 27 are located corresponds to the area on the nano SIM card body in which the reset terminal 32 of the nano SIM card is located. The third output 27 of the data transfer of the memory card is located next to the output 26 of the data transfer of the memory card.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply pin 33 of the nano-SIM card is located. The first communication pin 25 of the memory card is adjacent to the ground signal pin 24 of the memory card.

The area on the body of the memory card in which the clock signal terminal 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data transmission terminal 34 of the nano-SIM card is located.

The output 23 of the control signal of the memory card is located next to the fourth output 28 of the data transmission of the memory card and is isolated from it. The area on the memory card body, in which the control signal terminal 23 of the memory card and the fourth data transmission terminal 28 are located, corresponds to the area on the body of the nano-SIM card, in which the programming/input signal terminal of the nano-SIM card 35 is located. The output 23 of the control signal of the memory card is located next to the output 21 of the clock signal of the memory card.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located. The fourth output 28 of the data transmission of the memory card is located next to the output 22 of the power supply of the memory card.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which four pins are located, that is, the second pin 26 of the data transmission of the memory card, the third pin 27 of the data of the memory card, the first pin The memory card data transmission 25 and the memory card ground signal terminal 24 correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the first memory card transmission terminal 25 and the third memory card transmission terminal 27 are obtained by dividing the nano SIM card reset signal terminal 32 into two terminals. The shapes and sizes of the first memory card data transmission terminal 25 and the third memory card data transmission terminal 27 are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card ground signal terminal 24 are not limited.

The area on the memory card body in which four pins are located, that is, the memory card clock signal pin 21, the memory card control signal pin 23, the fourth memory card data transmission pin 28, and the memory card power supply pin 22 are located in the corresponding area on the nano card case. -SIM card, in which there is a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the memory card control signal terminal 23 and the fourth data transmission terminal 28 of the memory card are obtained by dividing the programming voltage/input signal terminal area of the nano-SIM card 35 into two terminals. The shapes and sizes of the memory card control signal output 23 and the fourth data transmission output 28 of the memory card are not limited. Further, the shapes and sizes of the memory card clock output 21 and the memory card power supply terminal 22 are not limited.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 23 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 23, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock signal terminal 31 of the nano-SIM card is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the reset terminal 32 of the nano-SIM card is located.

The area on the body of the memory card in which the clock signal terminal 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano SIM card body where the programming voltage/input signal terminal of the nano SIM card 35 is located.

The area on the body of the memory card in which the ground signal pin 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal pin 36 of the nano-SIM card is located.

The third output 27 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the second output 26 of the data transmission of the memory card. The third output 27 of the data transfer is isolated from the output 22 of the power supply of the memory card and the second output 26 of the data transfer of the memory card. The center point of the third output 27 data transmission is located on the connection line between the center point of the output 22 of the power supply of the memory card and the center point of the second output 26 data transmission.

The fourth communication pin 28 of the memory card is located between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card. The fourth communication pin 28 is isolated from the memory card clock pin 21 and the memory card ground signal pin 24 . The center point of the fourth output 28 data is located on the connection line between the center point of the output 21 of the clock signal of the memory card and the center point of the output 24 of the memory card signal ground.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which three pins are located, i.e., the power supply pin 22 of the memory card, the first data pin 25 of the memory card, and a clock pin 21 memory cards correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located.

The area on the memory card body in which three terminals are located, that is, the second data transmission terminal 26 of the memory card, the control signal terminal 23 on the memory card, and the ground signal terminal 24 of the memory card correspond to the area on the body of the nano-SIM card in which a data transmission terminal 34, a programming voltage/input signal terminal 35, and a ground signal terminal 36 of the nano-SIM card.

The third output 27 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the second output 26 of the data transmission of the memory card. Possibly, the center point of the third output 27 data transmission of the memory card is located on the connection line between the center point of the output 22 of the power supply of the memory card and the center point of the second output 26 data transmission of the memory. The fourth communication pin 28 of the memory card is located between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card. Possibly, the center point of the fourth output 28 of the data transmission of the memory card is located on the connection line between the center point of the output 21 of the clock signal of the memory card and the center point of the output 24 of the memory card signal ground.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 24 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 24, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the memory card body where the memory card clock pin 21 is located corresponds to the area on the nano-SIM card body where the nano-SIM clock pin 31 is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano SIM card in which the reset terminal 32 of the nano SIM card is located.

The area on the body of the memory card in which the power supply terminal 22 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the power supply terminal 33 of the nano-SIM card is located.

The area on the body of the memory card in which the ground signal terminal 24 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the data terminal 34 of the nano-SIM card is located.

The area on the body of the memory card, in which the control signal terminal 23 of the memory card is located, corresponds to the area on the body of the nano-SIM card, in which the terminal 35 of the programming voltage/input signal of the nano-SIM card is located.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the ground signal terminal 36 of the nano-SIM card is located.

The third communication pin 27 of the memory card is located between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card. The third communication pin 27 is isolated from the memory card clock pin 21 and the memory card ground signal pin 24 . The center point of the third output 27 data transmission is located on the connection line between the center point of the output 21 of the clock signal of the memory card and the center point of the output 24 of the signal card signal ground.

The fourth output 28 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the second output 26 of the data transmission of the memory card. The fourth output 28 data transfer is isolated from the output 22 of the power supply of the memory card and the second output 26 of the data transfer of the memory card. The center point of the fourth output 28 data transmission is located on the connection line between the center point of the output 22 of the power supply of the memory card and the center point of the second output 26 data transmission.

In this embodiment, in particular, from the above pinout, it can be seen that there is an area on the body of the memory card in which three pins are located, i.e., the memory card clock signal pin 21, the first memory card data transmission pin 25, and the power pin 22 memory cards are located in a corresponding area on the card body of the nano-SIM card, in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located.

The area on the memory card body in which three pins are located, that is, the memory card ground signal pin 24, the memory card control signal pin 23, and the second data transmission pin 26 of the memory card correspond to the area on the nano-SIM card body in which the pin is located. 34 data transmission, programming voltage/input signal terminal 35, and ground signal terminal 36 of the nano-SIM card.

The third communication pin 27 of the memory card is located between the clock signal pin 21 of the memory card and the ground signal pin 24 of the memory card. Possibly, the center point of the third output 27 of the data transmission of the memory card is located on the connection line between the center point of the output 21 of the clock signal of the memory card and the center point of the output 24 of the memory card signal ground. The fourth output 28 of the data transmission of the memory card is located between the output 22 of the power supply of the memory card and the second output 26 of the data transmission of the memory card. Possibly, the center point of the fourth output 28 data transmission of the memory card is located on the connection line between the center point of the output 22 of the power supply of the memory card and the center point of the second output 26 data transmission of the memory.

Additionally, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

Fig. 25 is a block diagram of yet another memory card according to an embodiment of the present invention. Based on the memory card provided in the embodiment shown in FIG. 1 as shown in FIG. 25, the memory card includes four data transmission terminals. The four data outputs are the first data output 25, the second data output 26, the third data output 27, and the fourth data output 28.

The area on the body of the memory card in which the clock pin 21 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the clock pin 31 of the nano-SIM card is located.

The area on the body of the memory card in which the first communication terminal 25 of the memory card is located corresponds to the area on the body of the nano SIM card in which the reset terminal 32 of the nano SIM card is located.

The area on the memory card body in which the third data transmission terminal 27 and the power supply terminal 22 of the memory card are located corresponds to the area on the nano SIM card body in which the power supply terminal 33 of the nano SIM card is located. Conclusion 22 of the power supply of the memory card occupies part of the area of the third conclusion 27 of the data transmission of the memory card. The output 22 of the power supply of the memory card is isolated from the third output 27 of the data transmission of the memory card. Conclusion 22 of the power supply of the memory card is located next to the first output 25 of the data transmission of the memory card.

The area on the body of the memory card in which the second communication terminal 26 of the memory card is located corresponds to the area on the body of the nano-SIM card in which the communication terminal 34 of the nano-SIM card is located.

The area on the memory card body where the memory card control signal terminal 23 is located corresponds to the area on the nano SIM card body where the programming voltage/input signal terminal of the nano SIM card 35 is located.

The area on the body of the memory card, in which the fourth data transmission terminal 28 and the ground signal terminal 24 of the memory card are located, corresponds to the area on the body of the nano-SIM card, in which the ground signal terminal 36 of the nano-SIM card is located. The output 24 of the ground signal of the memory card occupies part of the area of the fourth output 28 of the data transmission of the memory card. The output 24 of the ground signal of the memory card is isolated from the fourth output 28 of the data transmission of the memory card. Pin 24 of the ground signal of the memory card is located next to pin 23 of the control signal of the memory card.

In this embodiment, in particular, additionally, an area on the body of the memory card in which there are four terminals, that is, the clock signal terminal 21 of the memory card, the first data transmission terminal 25 of the memory card, the power supply terminal 22 of the memory card, and the third transmission terminal 27 memory card data that correspond to an area on the body of the nano-SIM card in which the clock signal terminal 31, the reset signal terminal 32, and the power supply terminal 33 of the nano-SIM card are located. It can be recognized that the third communication terminal 27 of the memory card and the power supply terminal 22 of the memory card are obtained by dividing the power supply terminal area 33 of the nano-SIM card into two terminals. Additionally, the power supply terminal 22 of the memory card occupies a part of the area of the third output 27 of the data transmission of the memory card. As can be seen from FIG. 25, where it is seen that the power supply terminal 22 of the memory card occupies the corner of the third communication terminal 27 of the memory card. The shapes and sizes of the third output 27 of the data transmission of the memory card and output 22 of the power supply of the memory card are not limited. In addition, the shapes and sizes of the memory card clock output 21 and the first data transmission output 25 of the memory card are not limited.

The area on the body of the memory card, in which there are four outputs, that is, the second output 26 of the data transmission of the memory card, the output 23 of the control signal of the memory card, the output 24 of the ground signal of the memory card and the fourth output 28 of the data transmission of the memory card are located in the corresponding area on the body nano-SIM card, which has a communication terminal 34, a programming voltage/input terminal 35, and a ground signal terminal 36 of the nano-SIM card. It can be recognized that the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are obtained by dividing the area of the ground signal terminal 36 of the nano-SIM card into two terminals. Additionally, the ground signal pin 24 of the memory card occupies a portion of the area of the fourth pin 28 of the data transmission of the memory card. As can be seen from FIG. 25, the ground signal terminal 24 of the memory card occupies the corner of the fourth communication terminal 28 of the memory card. The shapes and sizes of the fourth data transmission terminal 28 of the memory card and the ground signal terminal 24 of the memory card are not limited. Further, the shapes and sizes of the second memory card data transmission terminal 26 and the memory card control signal terminal 23 are not limited.

Further, in this embodiment, there may be gaps between the leads (or contacts, or connecting terminals) of the memory card, and therefore the wire of the memory card may be located on the surface of these distances; or there may be no gaps, and therefore the memory card wire may be inside the memory card case. In this embodiment, "corresponding" may also be referred to as a display relationship. Refer to the descriptions in the previous embodiments.

The nano SIM card in this embodiment is a micro SIM card, also referred to as a fourth form factor integrated circuit board, and is also referred to as Nano SIM card, Nano SIM card, Nano Sim card, NanoSim card, Nano Sim card, Nano SIM card , nano SIM card, nano SIM card, nano SIM card, nano SIM card, nano Sim card, nano sim card, nano sim card or nano sim card.

The memory card in this embodiment is a memory card with basically the same shape and basically the same size as the nano-SIM card in this embodiment of the present invention.

The terminal in the following embodiments may be a metal contact. To be specific, the terminal may be a contact with a contact area and a conductive function. The output in the embodiments of the present invention may be referred to as a connection terminal. The specific output name is not specifically limited.

Fig. 27 is a block diagram 1 of yet another memory card according to an embodiment of the present invention. Fig. 28 is a block diagram 2 of even another memory card according to an embodiment of the present invention. As shown in FIG. 27 and FIG. 28, fig. 27 shows the structure of the memory card, and FIG. 28 shows that there are eight contacts on the memory card. Pin designation is provided for each pin. Pin designations: 1, 2, 3, 4, 5, 6, 7, and 8. From the angle of view of FIG. 28, terminal 4 is located below terminal 3, and terminal 4 is L-shaped; and pin 5 is below pin 6, and pin 5 is in the shape of an "L".

Table 2. Method for configuring pins on a memory card

Terminal designation Memory card mode Serial peripheral interface (SPI) mode Name Description Name Description one DAT1 data line [bit 1] RSV reserved element 2 cmd command/response DI input data 3 GND grounding GND grounding 4 CD/DAT3 card detection/data line [bit 3] CS chip selection five DAT2 data line [bit 2] RSV reserved element 6 VDD power supply VDD power supply 7 DAT0 data line [bit 0] DO output eight CLK clock signal CLK clock signal

As shown in Table 2, the memory card can be in two modes of operation: memory card mode and SPI mode.

As shown in Table 2, when the memory card is in the memory card mode, the pins of the memory card are as follows: pin labeled 1 is DAT1, data line pin [bit 1] data line [bit 1], DAT1 pin is configured to transmit data , and DAT is the data pin. The pin labeled pin 2 is CMD (command pin), the pin is a command/response pin, and the CMD pin is configured to transmit a control command signal. The pin labeled 3 is GND, is a ground pin, and the GND pin is configured to transmit a ground reference signal. The pin labeled pin 4 is CD/DAT3, the pin corresponds to the card detection/data line [bit 3], the CD pin is configured to transmit a card detection signal, and the DAT3 pin is configured to transmit data . The pin with pin designation 5 is DAT2, the pin corresponds to the Data line [bit 2] (Data line [bit 2]), the DAT2 pin is configured to transmit data. The terminal labeled 6 is VDD is a power supply signal terminal, and the VDD terminal is configured to transmit the power supply signal. The pin with pin designation 7 is DAT0, the pin corresponds to data line [bit 0], data line [bit 0], and DAT0 is configured to transmit data. The pin with pin designation 8 is CLK (clock input pin), the pin corresponds to clock signals (clock), and the CLK pin is configured to transmit a clock signal.

As shown in Table 2, when the memory card is in SPI mode, the pins of the memory card are as follows: the pin labeled pin 1 is RSV, the pin is a reserved element, the pin labeled pin 2 is DI, the pin corresponds to the input data (data input), and the DI terminal is configured to transmit an input data signal. The pin labeled 3 is GND, the ground pin, and the GND pin is configured to carry a ground reference signal. The pin labeled pin 4 is CS, the pin corresponds to chip select, and the CS pin is configured to transmit a chip select signal. The pin with pin designation 5 is RSV and the pin is a reserved element. The terminal marked 6 is VDD, the terminal is a power supply signal terminal, and the VDD terminal is configured to transmit a power supply signal. The pin with pin designation 7 is equal to DO, the pin corresponds to data output, and the DO pin is configured to transmit a data output signal. The pin with pin designation 8 is the CLK pin, which corresponds to the clock signal (clock), and the CLK pin is configured to transmit the clock signal.

Additionally, Fig. 29 is a diagram 3 of another memory card according to an embodiment of the present invention. As shown in FIG. 29, there are certain distances between the pins of the memory card. Fig. 30 is a block diagram 4 of another memory card according to an embodiment of this application. Fig. 30 shows a side structure of the memory card, and the memory card has a specific thickness.

As shown in FIG. 27, a rounded corner may be provided on at least one bevel of the memory card. For example, as shown in FIG. 27, R1 rounded corner can be provided in the upper left corner of the memory card, R2 rounded corner can be provided in the upper right corner of the memory card, R3 and R4 rounded corners can be separately provided in the lower left corner of the memory card, and the lower right corner of the card memory can be provided with a rounded corner R5. The memory card has a width A and a height B. See table 3 for width A and height B.

As shown in FIG. 29 based on the angle of view of FIG. 29 from right to left, the memory card has a first side edge and a second side edge; from right to left, the memory card pin 8 has a first edge and a second edge; and from right to left, memory card pin 1 has a first edge and a second edge. The length of the distance from the first edge of terminal 8 to the second side edge of the memory card is A1. The distance length from the second edge of terminal 8 to the second side edge of the memory card is A2. The distance from the first edge of pin 1 to the second side edge of the memory card is A3. The length of the distance from the second edge of pin 1 to the second side edge of the memory card is A4. Further, from right to left, the memory card terminal 7 has a first edge and a second edge; and from right to left, memory card output 2 has a first edge and a second edge.

As shown in FIG. 29 based on the angle of view in FIG. 29, from right to left, there is a first edge and a second edge at the top of pin 5 in an "L" shape, and there is a third edge to the left of pin 5; from right to left, the memory card pin 6 has a first edge and a second edge; from right to left, memory card pin 3 has a first edge and a second edge; from right to left there is a first edge to the right of pin 4 in the shape of the letter "L"; and from right to left, there is a second edge and a third edge at the top of pin 4. The distance length from the first side edge of the memory card to the first edge of pin 5 is A11. The distance length from the first edge of pin 5 to the second edge of pin 5 is A12. The distance length from the second edge of pin 5 to the first edge of pin 6 is A9. The distance length from the first edge of pin 6 to the third edge of pin 5 is A10. The distance length from the first edge of pin 4 to the second edge of pin 3 is A8. The distance length from the second edge of pin 3 to the second edge of pin 4 is A7. The distance length from the second edge of pin 4 to the third edge of pin 4 is A6. The distance from the third edge of terminal 4 to the second side edge of the memory card is A5.

As shown in FIG. 29 based on the angle of view in FIG. 29 from top to bottom, the memory card has a third side edge and a fourth side edge; from top to bottom, the output 8 of the memory card has a third edge and a fourth edge; from top to bottom, output 7 of the memory card has a third edge and a fourth edge; from top to bottom, the output 6 of the memory card has a third edge and a fourth edge; from top to bottom there is a fourth edge on top of pin 5 in the shape of an "L"; and from top to bottom, there is a fifth edge and a sixth edge at the bottom of pin 5. Similarly, from top to bottom, memory card pin 1 has a third edge and a fourth edge; from top to bottom, output 2 of the memory card has a third edge and a fourth edge; from top to bottom, output 3 of the memory card has a third edge and a fourth edge; from top to bottom there is a fourth edge on top of pin 4 in the shape of an "L"; and from top to bottom, there is a fifth edge and a sixth edge at the bottom of pin 4. The distance length from the third side edge of the memory card to the first edge of pin 8 is B10. The distance length from the third edge of pin 8 to the fourth side edge of the memory card is B1. The distance length from the fourth edge of pin 8 to the fourth side edge of the memory card is B2. The distance length from the third edge of pin 7 to the fourth side edge of the memory card is B3. The distance from the fourth edge of pin 7 to the fourth side edge of the memory card is B4. The distance length from the third edge of pin 6 to the fourth edge of pin 6 is B5. The distance length from the fourth edge of terminal 6 to the fourth side edge of the memory card is B6. The distance length from the fifth edge of pin 5 to the sixth edge of pin 5 is B7. The distance length from the sixth edge of pin 5 to the fourth side edge of the memory card is B8. The distance from the third edge of pin 3 to the fourth side edge of the memory card is B9.

Based on the angle of view in FIG. 29, there is an R6 upper corner on the upper right corner of the memory card, there is an R7 rounded corner on the upper left corner of pin 1, there is an R8 rounded corner on the lower left corner of pin 3, there is an R9 rounded corner on the L-shaped bend of pin 4, and there is a rounded corner R10 in the bottom left corner of pin 4.

As shown in FIG. 30, the thickness of the memory card is C.

The above lengths and thicknesses are shown in Table 3. The numbers shown in Table 3 are in millimeters (mm).

Table 3. Distances between pins on a memory card

COMMON DIMENSION Symbol (SYMBOL) Minimum (MIN) Normal value (NOM) Maximum (MAX) A 12.20 12.30 12.40 A1 11.20 11.30 11.40 A2 7.30 7.40 7.50 A3 4.80 4.90 5.00 A4 0.90 1.00 1.10 A5 0.45 0.50 0.55 A6 0.95 1.00 1.05 A7 0.15 0.20 0.25 A8 3.10 3.20 3.30 A9 0.15 0.20 0.25 A10 3.10 3.20 3.30 A11 0.45 0.50 0.55 A12 0.95 1.00 1.05 B 8.70 8.80 8.90 B1 7.85 7.95 8.05 B2 5.95 6.05 6.15 B3 5.15 5.25 5.35 B4 3.25 3.35 3.45 B5 1.55 1.60 1.65 B6 1.25 1.35 1.45 B7 0.90 0.95 1.00 B8 0.2 B9 2.85 2.95 3.05 B10 0.75 0.85 0.95 C 0.60 0.70 0.84 D1 0.15 D2 0.15 D3 0.15 D4 0.15

Perhaps Fig. 31 is a block diagram 5 of yet another memory card according to an embodiment of the present invention. As shown in FIG. 31, in order to enhance the reliability of the card, a Keep Out Area is provided along the edge of the memory card extending inward. The protection area is an area in which the location of power lines is prohibited. The transmission lines may include a signal line, a power line, a control line, and the like. For example, as shown in FIG. 31, the memory card has four edges, and protective areas are provided on four sides. The four protection areas are marked with the symbol D1, the symbol D2, the symbol D3 and the symbol D4. D1, D2, D3 and D4 can also identify the distances at which the four protection areas extend inward along the edges of the memory card.

The minimum width dimension of each of the protection area D1, the protection area D2, the protection area D3, and the protection area D4 of the memory card may be 0.15 millimeters (mm).

The length of the memory card in this embodiment of the present invention may be approximately 12.3 millimeters, the length dimension deviation may be approximately 0.1 millimeters. In other words, the length of the memory card in this embodiment of the present invention may be from 12.2 millimeters to 12.4 millimeters.

The width of the memory card in this embodiment of the present invention may be approximately 8.8 millimeters, and the width dimension deviation may be approximately 0.1 millimeters. In other words, the width of the memory card in this embodiment of the present invention may be 8.7 mm to 8.9 mm.

The thickness of the memory card in this embodiment of the present invention may be approximately 0.7 millimeters, the positive deviation of the thickness dimension may be 0.14 millimeters, and the negative deviation of the thickness dimension may be approximately 0.1 millimeters. In other words, the thickness of the memory card can be from 0.6 millimeters to 0.84 millimeters.

Fig. 32 is a block diagram 6 of yet another memory card according to an embodiment of the present invention. As shown in FIG. 32, the leads are located in the shadow areas shown in FIG. 32. Conductive materials may be located in shadow areas so that conductive materials constitute the leads of the memory card. The non-conductive materials are located in the unshaded areas shown in FIG. 31 to form non-conductive regions.

Fig. 33 is a block diagram 7 of yet another memory card according to an embodiment of the present invention. As shown in FIG. 33, the leads are located in the unshaded areas shown in FIG. 33. Conductive materials may be located in non-shaded areas such that the conductive materials form the leads of the memory card. The non-conductive materials are located in the shaded areas shown in FIG. 33 to form non-conductive regions.

One or more types of conductive materials may be used to form each lead. For example, the conductive material may be gold or copper. In addition, the conductive material is not applied, the height of the memory card in the area in which the conductive material is located is less than or equal to the height in the area in which the non-conductive material is located. Conductive material does not protrude from the edge of the memory card. In other words, the conductive material is not located on the side edge of the memory card. The width of the memory card in the area in which the conductive material is located is less than or equal to the width of the card in the area in which the non-conductive material is located. The length of the memory card in the area containing the conductive material is less than or equal to the length of the card containing the non-conductive material.

Possibly, a via hole may be provided in the protection area of the memory card. A via is not provided at the pin location.

The memory card provided in this embodiment can be inserted into the nano SIM card holder of the terminal device. The nano SIM card holder may also be referred to as a card slot or a memory card slot. The spring is located on the nano-SIM card holder. As described above, the spring corresponds to the output on the memory card.

When the memory card is inserted into the nano SIM card holder or the memory card is removed from the nano SIM card holder, the output is scratched by the spring. For example, when the memory card shown in FIG. 28 is horizontally inserted into the nano SIM card holder, the four pins on one side of the memory card enter the nano SIM card holder first, and therefore the four pins are continuously scratched twice by the outer springs in the nano SIM card holder. For example, pins 1, 2, 3 and 4 enter the nano SIM card holder first, and pins 1, 2, 3 and 4 are continuously scratched twice by the end springs in the nano SIM card holder. For example, when the memory card shown in FIG. 28 is vertically inserted into the nano SIM card holder, the two pins that first enter the nano SIM card holder are continuously scratched by the external springs in the nano SIM card holder. For example, pins 1 and 8 first enter the nano SIM card holder, pins 1 and 8 are continuously scratched by four external springs in the nano SIM card holder, pins 2 and 7 are continuously scratched three times by external springs in the nano SIM card holder, and pins 3 and 6 are continuously scratched twice by the extreme springs in the nano-SIM card holder. Therefore, it is necessary to ensure the durability of the memory card in order to ensure a relatively long service life of the memory card.

Additionally, you need to make sure that the memory card is not overheating. The memory card has many modes of operation, such as high-speed mode and ultra-high speed mode (ultra-high speed-I, UHS-I). In high speed mode, the operating voltage of the memory card is 3.3 volts (V). In UHS-I mode, the operating voltage of the memory card is 1.8 volts (V). In the aforementioned different operating modes, the power consumption of the memory card varies, and therefore the heat generated by the memory card changes. To ensure the normal operation of the memory card, regardless of the mode of operation of the memory card, it is necessary to ensure that the power consumption of the memory card is within 0.72 watts (W).

First, you need to determine if the memory card is inserted into the nano SIM card holder or removed from the nano SIM card holder. The present invention provides two methods of detection: a memory card is inserted or removed.

The first detection method is described as follows: The card detection switch is located in the terminal device's nano SIM card holder. In this case, the card detection switch is normally open, as shown in Table 4. When the memory card is removed, the card detection switch is open; or, when a memory card is inserted, the card detection switch is closed. In particular, FIG. 34 is a circuit diagram of memory card insertion and ejection detection according to an embodiment of the present invention. As shown in FIG. 34, a host controller 01, a detection power supply (VDD) 02, and a card detection switch 03 are provided. The host controller 01 and the detection power supply 02 are located in the terminal device, the card detection switch 03 is located in the nano SIM card holder of the terminal device. One end of the card detection switch 03 is connected to the host controller 01, and the other end of the card detection switch 03 is grounded. The output end of the detection power supply 02 is connected between the host controller 01 and the detection switch 03 of the card. When the memory card is inserted, the card detection switch 03 is closed, the host controller 01 detects a low level signal, and the host controller 01 provides power to the memory card; or when the memory card is removed, the card detection switch 03 is open, the host controller 01 detects a high level signal, and the host controller 01 turns off the power supply that provides electrical power to the memory card.

The second detection method is described as follows. Likewise, the card detection switch is located in the nano SIM card holder of the terminal device. In this case, the card detection switch is of the normally closed type, as shown in Table 4. When the memory card is removed, the card detection switch is closed; or, when a memory card is inserted, the card detection switch is open. In particular, as shown in FIG. 34, when the memory card is inserted, the card detection switch 03 is open, the host controller 01 detects a high level signal, and the host controller 01 provides a power source that provides electrical power to the memory card; or, when the memory card is removed, the card detection switch 03 is closed, the host controller 01 detects a low signal, and the host controller 01 turns off the power supply that provides electrical power to the memory card.

Therefore, a memory card can be detected, inserted or removed. When the memory card is detected to be ejected, the power supply that provides electrical power to the memory card is turned off, thereby saving electrical power and achieving low power consumption.

Table 4. Card detection switch status

Card Detection Switch Types Memory card removed (nano SD is Removed) Memory card inserted (nano SD is Inserted) Normally open Open (OFF (open)) Closed (ON (closed)) Normally closed Closed (ON (closed)) Open (OFF (open))

The above "insertion of the memory card" means that when all the terminals on the memory card are in contact with the corresponding springs, it is determined that the memory card is inserted. The above "memory card ejection" means that when one or more pins on the memory card are no longer in contact with the corresponding spring, it is determined that the memory card has been ejected.

The functions of the memory card provided in the present invention are compatible with the functions of the memory card in the prior art. However, since the memory card provided in the present invention can be inserted into the nano SIM card holder of the terminal, the size of the memory card provided in the present invention is smaller than that of the memory card in the prior art.

The memory card provided in the present invention is a micro memory card and may also be referred to as nano SD memory card, nano SD memory card, nano SD memory card, nano SD memory card, nano SD memory card or nano SD memory card.

The shape of the memory card of the present invention is basically the same as that of the nano SIM card. Further, the size of the memory card provided in the present invention is basically the same as that of the nano SIM card.

The present invention further provides a terminal including the aforementioned memory card. Typically, a memory card is used by applications used in conjunction with various products (such as a terminal device) to store digital data. At regular intervals, the memory card can be removed from the terminal device to enable transfer of the media containing the digital data stored on the memory card. The memory card of the present invention may have a relatively small aspect ratio and may be configured to store digital data for a terminal device. For example, the terminal device is a camera, a PDA or laptop, a network application device, a set-top box, a PDA or other compact audio player/recorder, or a medical monitor.

Fig. 26 is a diagram of a terminal device according to an embodiment of the present invention. As shown in FIG. 26, the memory card can be inserted into the nano SIM card holder of the terminal device. The first connection point 41 corresponding to the clock signal terminal 21 of the memory card, the second connection point 42 corresponding to the power supply terminal 22 of the memory card, the second connection point 43 corresponding to the control signal terminal 23 of the memory card, the second connection point 44 corresponding to the terminal 24 of the memory card ground signal , the second connection point 45 corresponding to the first connection 25 of the memory card, the second connection point 46 corresponding to the second connection 26 of the memory card, the second connection point 47 corresponding to the third connection 27 of the memory card, and the second connection point 48 corresponding to the fourth communication terminal 28 of the memory card are located in the nano-SIM card holder. After the memory card is inserted into the nano-SIM card holder, the pins of the memory card are in contact with the corresponding connection points. The first output 51 is connected to the first connection point 41, the second output 52 is connected to the second connection point 42, the third output 53 is connected to the second connection point 43, the fourth output 54 is connected to the second connection point 44, the fifth output 55 is connected to the second connection point 45 , the sixth terminal 56 is connected to the second connection point 46, the seventh terminal 57 is connected to the second connection point 47, and the eighth terminal 58 is connected to the second connection point 48, which are located on the control chip of the terminal device. The second terminal 52 may be a power supply terminal of the control chip and the fourth terminal 54 may be a ground signal terminal of the control chip.

Additionally, the terminal device has an SD interface and a SIM interface. Six pins are located on the SD interface: the first SD pin, the second SD pin, the third SD pin, the fourth SD pin, the fifth SD pin, and the sixth SD pin. There are three pins on the SIM card interface: the first SIM card pin, the second SIM card pin, and the third SIM card pin.

Three switches 61 are provided in the control chip. One end of each of the three switches 61 is connected to each of any three of the first pin 51, the third pin 53, the fifth pin 55, the sixth pin 56, the seventh pin 57, and the eighth pin 58 in a one-to-one correspondence. . Other pins in the first pin 51, the third pin 53, the fifth pin 55, the sixth pin 56, the seventh pin 57 and the eighth pin 58, which are not connected to the switches 61, are connected to three pins on the SD interface in a one-to-one correspondence.

Each of the remaining three pins on the SD interface, which are not connected to the pins of the control chip, is in one-to-one correspondence with the other end of each of the three switches 61. Each of the three pins in the SIM interface is in one-to-one correspondence with the other end of each of the three switches 61.

The control chip controls based on the detection on the memory card of a one-to-one correspondence between the other end of each of the three switches 61 and each of the remaining three pins on the SD interface that are not connected to the pins of the control chip. In addition, the memory card currently implements a storage function. Alternatively, the control chip controls based on the detection on the memory card of a one-to-one correspondence between the other end of each of the three switches 61 and each of the three pins on the SIM interface. In addition, the memory card is changed to a SIM card to realize the communication function.

A near field communication (NFC) structure 71 may be provided. The output end of the NFC structure 71 corresponds to one end of the other switch. In addition, the seventh terminal 57 corresponds to one end of the other switch. The other end of the other switch is connected to the second connection point 47 . Therefore, the output end of the NFC structure 71 is connected to one end of the other switch, or the seventh terminal 57 is connected to one end of the other switch.

The above embodiments specifically describe the memory card and terminal device. The above descriptions are intended to illustrate exemplary embodiments of a memory card, but do not constitute a limitation of the present invention. The technologies disclosed in the present invention may further be used to apply a memory card to a computing device, and the computing device controls or manages the memory card. In addition to the terminal device, examples of applications that can be implemented on a memory card include a wireless communication device, a global positioning system (GPS) device, a cellular device, a network interface, a modem, a magnetic disk. storage system and the like.

Many features and advantages of the present invention are given in the description. Therefore, the claims cover all these features and advantages of the present invention. Additionally, since a person skilled in the art can easily make many adjustments and changes, the present invention is not limited to the exact structures and operations described. Therefore, all suitable adjustments and modifications that may be used are within the protection scope of the present invention.

Claims (51)

1. Terminal device for data storage, containing a connector for receiving a memory card comprising a memory card interface, the memory card interface being disposed on the memory card body, wherein the size of the memory card body is the same as that of the Nano Subscriber Identity Module (SIM) card card body; and The memory card interface contains the first metal contact of the memory card, the second metal contact of the memory card, the third metal contact of the memory card, the fourth metal contact of the memory card, the fifth metal contact of the memory card, the sixth metal contact of the memory card, the seventh metal contact of the memory card, and the eighth metal contact of the card memory, while the first metal contact of the memory card is configured to transmit a power signal, the first metal contact of the memory card is electrically connected to the first spring contact when the memory card is located in the connector; the second metal contact of the memory card is configured to transmit the first data signal; the third metal contact of the memory card is configured to transmit a control signal; the fourth metal contact of the memory card is configured to transmit a clock signal; the fifth metal contact of the memory card is configured to be connected to ground, the fifth metal contact of the memory card is electrically connected to the second spring contact when the memory card is located in the connector; the sixth metal contact of the memory card is configured to transmit the second data signal; the seventh metal contact of the memory card is configured to transmit the third data signal, the seventh metal contact of the memory card is electrically connected to the third spring contact when the memory card is located in the connector; and the eighth metal contact of the memory card is configured to transmit the fourth data signal, the eighth metal contact of the memory card is electrically connected to the fourth spring contact when the memory card is located in the connector; wherein when the nano SIM card is located in the connector, the power supply contact of the nano SIM card is electrically connected to the first spring contact and the third spring contact, and the ground contact of the nano SIM card is electrically connected to the second spring contact and the fourth spring contact. 2. The terminal device according to claim 1, in which the second metal contact is configured to be connected to the fifth spring contact of the connector when the memory card is located in the connector, the nano-SIM reset signal terminal is configured to be connected to the fifth spring terminal of the connector when the nano-SIM is located in the connector; the third metal contact is configured to be connected to the sixth spring contact of the connector when the memory card is located in the connector, the programming voltage/input signal contact of the nano SIM card is configured to be connected to the sixth spring contact of the connector when the nano SIM card is located in the connector; the fourth metal contact is configured to be connected to the seventh spring contact of the connector when the memory card is located in the connector, the clock signal contact of the nano SIM card is configured to be connected to the seventh spring contact of the connector when the nano SIM card is located in the connector; the sixth metal contact is configured to be connected to the eighth spring contact of the connector when the memory card is located in the connector, the data signal terminal of the nano SIM card is configured to be connected to the eighth spring terminal of the connector when the nano SIM card is located in the connector. 3. A terminal according to claim 1 or 2, wherein the memory card is 12.30 millimeters (mm) long and 8.80 mm wide. 4. The terminal device according to any one of paragraphs. 1-3, in which the memory card contains a storage unit and a control unit; the storage unit and the control unit are located inside the memory card housing; the control unit is electrically connected to the storage unit; a the control unit is electrically connected to the memory card interface. 5. The terminal device according to any one of paragraphs. 1-4, in which eight metal contacts are located on the first surface of the memory card body. 6. The terminal device according to any one of paragraphs. 1-5, in which one corner of the memory card is a chamfer, and the first surface of the memory card includes a first edge, a second edge, a third edge, and a fourth edge; the chamfer is located between the second edge and the fourth edge; the first edge is parallel to the second edge; the third edge is parallel to the fourth edge, while the length of the first edge is greater than the length of the third edge. 7. The terminal device according to claim 6, in which a sixth metal contact, a third metal contact, a fifth metal contact, and an eighth metal contact are arranged along the fourth edge; a fourth metal contact, a second metal contact, a first metal contact, and a seventh metal contact are arranged along the third edge. 8. The terminal device according to claim 6 or 7, in which the seventh metal contact is adjacent to the eighth metal contact in the length direction of the first edge; wherein the fourth metal contact is adjacent to the sixth metal contact in the length direction of the second edge. 9. The terminal device according to any one of paragraphs. 6-8, in which the third metal contact is adjacent to the fifth metal contact along the length direction of the fourth edge, the third metal contact and the fifth metal contact are not adjacent to the first edge along the length direction of the fourth edge, and the third metal contact and the fifth metal contact are not adjacent to the second edge along the length direction fourth edge; wherein the first metal contact is adjacent to the second metal contact along the length direction of the third edge, the first metal contact and the second metal contact are not adjacent to the first edge along the length direction of the third edge, and the first metal contact and the second metal contact are not adjacent to the second edge along the length direction third edge. 10. The terminal device according to any one of paragraphs. 1-9, in which eight metal contacts are isolated from each other. 11. The terminal device according to any one of paragraphs. 1-10, wherein the rounded corner is provided on at least one bevel of the memory card. 12. The terminal device according to any one of paragraphs. 1-11, in which at least one of the eight metal contacts contains a rounded corner. 13. The terminal device according to any one of paragraphs. 1-12, wherein the area of the first metal contact exposed on the first surface of the card body is larger than the area of the seventh metal contact exposed on the first surface of the card body; wherein the area of the fifth metal contact exposed on the first surface of the card body is greater than the area of the eighth metal contact exposed on the first surface of the card body. 14. The terminal device according to any one of paragraphs. 6-13, wherein the distance between the seventh metal contact and the first edge is the first distance, the distance between the fourth metal contact and the second edge is the second distance, wherein the first distance is less than the second distance; the distance between the eighth metal contact and the first edge is the third distance; the distance between the sixth metal contact and the second edge is the fourth distance, while the third distance is less than the fourth distance. 15. The terminal device according to any one of paragraphs. 1-14, wherein the shape of the seventh metal contact is L-shaped and the shape of the eighth metal contact is L-shaped. 16. The terminal device according to any one of paragraphs. 1-15, wherein the memory card interface protocol comprises at least one of Secure Digital (SD) Memory, Universal Serial Bus (USB), Peripheral Component Express (PCIE), Universal Flash (UFS), Multimedia card (MMC) or built-in MMC (EMMC).

Images