RU2775297C1 - Method and device for switching supply voltage - Google Patents

Abstract

FIELD: methods for switching the supply voltage.

SUBSTANCE: method for switching the supply voltage and the device - the supply voltage switch - belong to the field of electronic engineering and can be used in circuits where it is required to switch the voltage to the load with galvanic isolation of the common primary power source from the two output buses of the device in the off state. In addition, the method and a set of two of these devices can be used in redundant control systems, for example, spacecraft, where it is required to ensure the operation of at least one reserve of a cold redundant system with the admissibility of failure of any one element in the path of any reserve. The effect is achieved by using a pair of CMOS transistors of the same type of conductivity as power switches in one supply voltage bus and in the second supply voltage bus - a pair of CMOS transistors of another type of conductivity. In this case, both pairs of CMOS transistors are switched on by a pulse signal, the open state of the pairs of CMOS transistors is maintained by the voltages of the output voltage multiplying unit of the supply voltage switch. Switching off is carried out by applying pulse signals that prohibit the operation of the voltage multiplication unit, as a result of which all CMOS transistors are closed.

EFFECT: increase in manufacturability, which makes it possible to manufacture a power supply switch of a minimized configuration in the form of a microassembly; invention also facilitates the choice of power switches for a product with increased radiation resistance; in addition, in special applications, increased reliability is provided in the long term, and especially in conditions of exposure to elevated temperatures and high levels of background radiation.

3 cl, 3 dwg, 1 tbl

Description

Technical field

The method of switching the supply voltage and the device switching the supply voltage belong to the field of electronic engineering and can be used in circuits where it is required to switch the voltage to the load with galvanic isolation of the common primary power source from the two output buses of the device in the off state. In addition, the method and a set of two of these devices can be used in redundant control systems, for example, spacecraft, where it is required to ensure the operation of at least one reserve of a cold redundant system with the admissibility of failure of any one element in the path of any reserve.

State of the art

Known voltage switch with protection against overcurrent [1]. As part of considering its part as an analogue, according to the purpose and scope of the tasks to be solved, the proposed technical solution contains a voltage switch on input, a voltage switch off input, a trigger, an electronic key, a load unit, two supply voltage buses. The method of switching the voltage on the load in this case consists in the fact that to turn on the device, the turn-on pulse signal is converted into a constant level signal using an RS trigger. This constant level signal opens an electronic key, which is installed between one input power bus and the load unit. The other output of the load block is connected to another input power bus. To turn off the device with a shutdown pulse signal, the RS flip-flop is set to its initial state, which ensures the switched off state.

The voltage switch ensures the connection of the load unit by pulse signals at the inputs for switching on and off the voltage switch.

The disadvantages of the method and device - voltage switch are that they do not provide complete galvanic isolation of the load unit from the supply voltage buses when a pulse signal is received at the input of the voltage switch off. Another disadvantage of this switch is low reliability due to loss of operability in case of failure of any element of the voltage switch. In addition, to ensure the operability of the voltage switch, for example, an additional power source for the control elements of the electronic key is required, or the control elements are permanently connected to the primary power source, which is also a disadvantage of the method and device.

Prototype

Of the known analogues, the closest in technical essence are the method of switching the supply voltage and the device for its implementation, presented in the patent [2]. Optoelectronic power relay for redundant systems, contains an enable bus, two shutdown buses, the first common output of the shutdown signal, the second common output of the shutdown signal, a current driver, an optocouplers connection circuit, four optocouplers connected in series with the first input bus, the switching circuit of the first optocoupler, the switching circuit of the second optocoupler, the first output bus, as well as the second input bus connected in series, the switching circuit of the third optocoupler, the switching circuit of the fourth optocoupler, the second output bus, moreover, the anodes and cathodes of the LEDs of each optocoupler are connected to the corresponding inputs of the optocoupler connection circuit, the output of the current shaper is connected to the current input optocoupler connection circuits, and the device contains two switches, an analog OR, with the enable bus connected to the first input of the analog OR, the second input of which is connected to the first output bus, the first and second switches are connected in parallel, the control input of the first switch is connected to the first shutdown bus i, the control input of the second switch is connected to the second shutdown bus, the current shaper is connected between the current input of the optocouplers connection circuit and the analog OR output, the current output of the optocouplers connection circuit is connected to the second output bus, the first common output of the shutdown signal when the keys are made on transistors is connected to the point connection of the first key and the second output bus, the second common output of the shutdown signal is connected to the connection point of the second switch and the second output bus, and when the keys are made on optocouplers, the first common output of the shutdown signal is connected to another control input of the first switch, the second common output of the shutdown signal is connected to another control input of the second key.

The method of switching the voltage (at the load) of the prototype consists in the fact that in each power bus of the supply voltage a pair of power switches (optocouplers switching circuit) is installed in series, to turn on the device, a pulse signal (current) is applied to the control input (optocoupler LED) of each power switch, further, constant level signals (current) are applied to these inputs, to turn off the device, constant level signals are blocked, blocking is carried out in two duplicated circuits, constant level signals are presented in the form of current I = (U out -U _4sv ) / R, which is generated by a current _shaper from the output voltage U _out of the device, taking into account the voltage drop U _4sv on the LEDs of the optocouplers and the resistance R of the current shaper, the turn-on pulse signal is also formed in the form of a current with an amplitude I _imp ≈I.

In the above description of the prototype method, an extended interpretation of its terms is used for their identity with the terminology of the claimed device and method, which does not violate the principle of operation of the device:

- switching circuits of optocouplers are replaced by power switches,

- the current is replaced by a constant level signal (in the mode of maintaining U _out ),

- the current is replaced by a pulse signal (in the mode of switching on the switch).

The advantage of the method and device is the absence of the need for an additional power source, increased reliability, complete disconnection from the input voltage source in the off mode of each input bus.

The reliability of turning off the optoelectronic power relay of redundant systems in case of any one failure is ensured both by the parallel connection of the first and second switches (low-current) with the corresponding duplicated circuits for their control along the first and second shutdown buses, and by the fact that a pair of power switches is installed in series in each power bus of the supply voltage. keys.

Reliability of supplying voltage to at least one reserve of the load system (with two sets of devices) in the event of any one failure in any one reserve of a set of optoelectronic relays for supplying redundant systems is ensured together with the control system of the redundant object, which generates a signal on the bus for switching on one or another serviceable reserve devices. Thus, a set of two optoelectronic power relay devices for redundant systems ensures the operation of the load in case of at least one failure in any reserve (together with the control system).

The disadvantage of the method and device is the low manufacturability resulting from the principle of operation of the optocoupler - the control of its power circuit by the light flux. Accordingly, it is impossible to ensure the manufacture of a small-sized version of the device, for example, in the form of a microassembly due to the problems of isolating the light fluxes of optocouplers with their execution in unpackaged crystals. The use of case optocouplers in a microassembly leads to a lack of efficiency of its weight and size parameters.

In the case of a power version of the supply voltage switch and, accordingly, for example, the electronic unit of its load, the range of power elements of these products contains both an optocoupler for the supply voltage switch and a more common power element - a CMOS transistor of the electronic load unit. Thus, we have a range of components that is heterogeneous in terms of the physics of functioning. Which also leads to a decrease in manufacturability.

Another disadvantage of manufacturability lies in the problems (or impossibility) of using optocouplers in special application technology: “... optoelectronic devices have disadvantages due to the low resistance of elements to ionizing radiation, which limits their use in radiation-resistant equipment ...” [3]. In addition, the long-term instability of optocoupler parameters is known from the article [4] of the JSC Volkhov Semiconductor Plant: “... the problems of optocouplers such as degradation of the emissivity of LEDs and polarization of compounds, leading to leakage of the photodetector, have not yet been resolved ...”. This causes low reliability of optocouplers in the long term, and especially in conditions of exposure to elevated temperatures and a high level of background radiation.

Purpose of the invention

The aim of the invention is to improve manufacturability. The goal in the claimed method is achieved by using CMOS transistors of one type of conductivity as power switches in one supply voltage bus, and CMOS transistors of a different conductivity type, pulses of electrical turn-on signals and electrical signals of a constant level are used as power switches in the other supply voltage bus. are generated by voltage sources, at the same time, a positive polarity of the voltage of one pulse of electrical turn-on signals is formed, from which voltage pulses U _z between the gate and source of each CMOS transistor in one supply voltage bus are formed, and a negative polarity of the voltage of the pulse of the electrical turn-on signal of another source, from which pulses are formed voltages U _zi between the gate and source of each CMOS transistor in another supply voltage bus, the voltage value U _zi is set sufficient to create an open state of the drain-source transition of CMOS transistors, voltage The voltages U _const of constant level electrical signals are generated by multiplying the output voltage of the supply voltage switch, the polarity and level of the two voltages U _const are generated in accordance with the polarity and level of voltages U _zi for CMOS transistors in the supply voltage buses.

The goal in the claimed device is achieved by introducing a second block of diodes, four resistors, a voltage multiplication unit, a second turn-on bus, in the first supply voltage bus, CMOS transistors of the same conductivity type are used as power switches, in the other supply voltage bus as power switches use CMOS transistors of a different type of conductivity, two outputs of the first block of diodes are connected respectively to the gates of the first and second CMOS transistors, between the gate and the source of which the first and second resistors are connected, respectively, the second input of the first block of diodes is connected to the first output of the output voltage multiplying block, the positive and negative terminals of the power supply of the voltage multiplication unit are connected respectively to the output buses, the two outputs of the second diode unit are connected respectively to the gates of the third and fourth CMOS transistors, the third and fourth resistors are connected between the gate and the source, respectively, the first input of the the second diode block is connected to the second switching bus, the second input of the second diode block is connected to the second output of the output voltage multiplying block.

The essence of the invention

The device is illustrated in Fig. 1 is a diagram of one variant of the supply voltage switch, FIG. 2 - options "A", "B" execution of the key K ₊ , fig. 3 is a diagram of another version of the supply voltage switch (with separate sources of shutdown signals). In FIG. 1, the supply voltage switch contains connected in series a positive input bus 1, a power circuit of a CMOS transistor 2 n - type, a power circuit of a CMOS transistor 3 n - type, a positive output bus 4. Resistors 5 are connected between the gate and source of the CMOS transistor 2 and CMOS transistor 3, respectively. and 6. The negative input bus 7 is connected in series with the power circuit of the CMOS transistor 8 p - type, the power circuit of the CMOS transistor 9 p - type, the negative output bus 10, between the gate and the source of the CMOS transistor 8 and the CMOS transistor 9, respectively, resistors 11 and 12 are connected The gates of CMOS transistors 2 and CMOS transistor 3 are connected respectively to the first and second outputs (diode OR) of the diode block 13. The gates of the CMOS transistors 8 and CMOS transistor 9 are connected respectively to the first and second outputs (diode OR) of the diode block 14. The first inputs of the blocks diodes 13 and 14 are connected respectively to the first and second inputs of the shutdown of the voltage multiplication unit 15, the outputs of the positive and negative voltages of which are connected respectively to the second inputs of the diode blocks 13 and 14. One source 16 of control signals is connected between the positive output bus 4 and the first control bus 17, which is also connected to the first input of the diode block 13. The second source 18 of control signals is connected between the negative output bus 10 and the second control bus 19, which is also connected to the first input of the diode block 14. The positive and negative power leads of the voltage multiplication unit 15 are connected, respectively, to the positive and negative output buses 4 and 10.

In the above description of the supply voltage switch, an extended interpretation of its terms is used, which is used in the distinctive part of clause 2 of the formula and is physically identical with the following terminology of the prototype device:

- the switching circuit of the optocoupler is replaced by a power switch,

- analog OR is replaced by a block of diodes.

The diode block 13 contains two diode elements OR for positive voltages at its first and second inputs relative to the positive output bus 4. The gates of CMOS transistors 2 and 3 n - type are decoupled by the corresponding first and second diode elements OR of the diode block 13.

The diode block 14 contains two OR diode elements for negative voltages at its first and second inputs relative to the negative output bus 10. The gates of the p-type CMOS transistors 8 and 9 are decoupled by the corresponding first and second diode OR elements of the diode block 14.

In the simplest case, the first and second sources 16 and 18 of control signals can represent identical secondary windings of a pulse transformer, the primary winding of which receives the primary pulse signal to control the voltage switch. For the redundant version, the first and second sources 16 and 18 of control signals can represent the secondary windings of two pulse transformers that form time-synchronous control pulses.

Block 15 voltage multiplication may have many circuit solutions. For example, based on a Latour-Delon-Grenachere voltage doubler or based on a Royer generator, etc. In this case, many circuit solutions for switching off the supply voltage switch are also possible. For example, by turning on the keys K ₊ and K _- of the voltage multiplication unit 15 installed in its power supply circuits, or the generator G, or as indicated in FIG. 1, fig. 3 and so on. A simplified circuit diagram of the internal structure of the voltage multiplication unit 15 in FIG. 1, fig. 3 displays special cases of variants of algorithms for its operation.

To reliably turn off the supply voltage switch with a capacitive load in FIG. 2 shows variants of the key K ₊ using a CMOS transistor - fig. 2A and bipolar transistor - FIG. 2B, which provide an extension of the turn-off pulse. It is also possible to make the key K ₊ with the opposite connection of the diode for transistors of keys of a different type (see table 1). Similarly, it is possible to make keys K _- with the corresponding polarity of the diodes.

In FIG. 3 (in contrast to FIG. 1) the sources 20 and 21 of the shutdown signals are introduced. The switch-off signal source 20 is connected between one switch-off input of the voltage multiplication block 15 and the positive output bus 4. The switch-off signal source 21 is connected between the other switch-off input of the voltage multiplication block 15 and the negative output bus 10. In this case, the switch-off inputs of the voltage multiplication block 15 are not connected as with the first and second control buses 17 and 19, as shown in FIG. 1. Sources 20 and 21 of the shutdown signals are redundant shutdown circuits of the voltage multiplication unit 15. For example, these are the output windings of two transformers.

The operation of the supply voltage switch in the turn-on mode according to FIG. 1, fig. 3 is carried out as follows. The initial state of the CMOS transistors 2, 3 and 8, 9 as well as keys K ₊ and K _- block 15 of the voltage multiplication is closed. When the switching pulses are generated by the sources 16 and 18 of the control signals, a pulse of positive polarity is generated on the first control bus 17 relative to the positive output bus 4 and on the second control bus 18 - a pulse of negative polarity relative to the negative output bus 10 (see table 1). The state of the keys K ₊ and K _- block 15 voltage multiplication under the action of switching pulses does not change.

At the same time, in the process of switching on, through the first inputs of the OR elements (for signals of positive polarity) of the diode block 13, the capacitances of the gates of the CMOS transistors 2, 3 are charged. Through the first inputs of the OR elements (for signals of negative polarity) of the diode block 14, the capacitances of the gates of the CMOS transistors 8 are charged , 9. Limiting the charge current of the gate capacitance of CMOS transistors 2, 3, 8, 9 is carried out, for example, due to the internal resistance of 10÷20 Ohm sources 16, 18 or by installing limiting resistors at the outputs of the OR elements in diode blocks 13 and 14 (on Fig. 1 is indicated by a dotted line). The amplitude of the voltage pulses must comply with the requirements of the technical characteristics of CMOS transistors 2, 3, 8, 9. Accordingly, the power circuits of CMOS transistors 2, 3, 8, 9 open and a voltage appears on the output buses 4 and 10 of the supply voltage switch that is almost equal to U _out = U _in . To reliably turn on the supply voltage switch with a capacitive load component, the duration of the turn-on pulses must be at least the voltage establishment time _Uout . If necessary, the action of switching-on pulses of insufficient duration of control signal sources 16 and 18 can be extended by connecting capacitors in parallel with the input capacitance C and _CMOS transistors 2, 3 and 8, 9 (not shown in Fig. 1, 3). Through the 10÷20 Ohm resistors indicated above, the connected capacitors and input capacitances C or _CMOS transistors 2, 3 and 8, 9 are quickly charged and slowly discharged through resistors 5, 6, 11, 12 with a value of R _5,6,11,12 >>10÷20 Ohm at the end of the switching pulses.

At some point in time when the voltage U _out is established, the generator G (for example, pulsed with a duty cycle Q=2) of the voltage multiplication unit 15 begins to function and, accordingly, its output voltages 2U* _out and -U* _out (relative to the negative output bus 10) are formed. The operation of voltage multipliers is described in detail, for example, in [5, 6]. Resistor R ₁₃ block 15 voltage multiplication is with resistors 5 and 6 voltage dividers 2U* _out . Resistor R ₁₄ block 15 voltage multiplication is with resistors 11 and 12 voltage dividers -U* _out . They are designed to limit the discharge current (when the switch is turned off) with the keys K ₊ and K _- of the corresponding capacities of the voltage multiplication unit 15 and to provide the required voltage level U _zi between the gate and source of the CMOS transistors 2, 3, 8, 9. Depending on the value of U _input and allowable voltage values U _zi between the gate and source of the CMOS transistors 2, 3, 8, 9 the value of the resistors R ₁₃ and R ₁₄ of the voltage multiplication unit 15 is determined by calculation or by selection at the adjustment stage.

Thus, at the end of the turn-on pulses at the outputs of the OR elements of the _{diode blocks} 13 and ₁₄ , _{constant voltages} are formed with a level between the gate and the source of the CMOS transistors 2, 3, 8, 9. Accordingly, the CMOS transistors 2, 3, 8, 9 remain open at the end of the turn-on pulses. This open state of the CMOS transistors 2, 3, 8, 9 is supported by the formation of voltages 2U* _out and -U* _out by the block 15 of the voltage multiplier U _out until the turn-off pulses arrive.

Turning off the voltage switch according to the variant shown in Fig. 1 is carried out as follows. Sources 16 and 18 of the control signals generate off pulse signals of opposite polarity relative to the on signals: on the first control bus 17 a negative polarity pulse is generated relative to the positive output bus 4 and on the second control bus 19 a positive polarity pulse is generated relative to the negative output bus 10 (see table 1 ). At the same time, the keys K ₊ and K _- of the voltage multiplication unit 15 open, shunting the voltages -U* _out and 2U* _out to the corresponding output buses 10 and 4. At the first and second outputs (diode OR) of the diode blocks 13 and 14 and, respectively, at the gates CMOS transistors 2, 3, 8, 9 voltage U _z → 0, CMOS transistors 2, 3, 8, 9 are closed and U _out → 0. The generator G is de-energized and then the state U _out = 0 is stored. To reliably turn off the supply voltage switch with the capacitive component of the load, the duration τ _{off of the turn-off} pulses must be at least the time τ _cn of the voltage drop U _out . When τ _off <τ _cn , the execution of the keys K ₊ and K _- of the voltage multiplication unit 15 according to FIG. 2 (or similar according to table 1).

Turning off the voltage switch according to the variant shown in Fig. 3 is carried out as follows. Sources 20 and 21 of the shutdown signals synchronously generate pulses according to table 1. At the same time, the switches K ₊ and K _- of the voltage multiplication unit 15 open, shunting the voltages 2U* _out and -U* _out to the corresponding output buses 4 and 10. At the first and second outputs (diode OR) blocks of diodes 13 and 14 and, accordingly, at the gates of CMOS transistors 2, 3, 8, 9 voltage U _zi → 0, CMOS transistors 2, 3, 8, 9 are closed. The generator G is de-energized and then the absence state U _out is stored. The requirements for the execution of keys K ₊ and K _- depending on τ _off and τ _cn are similar to those described above for FIG. one.

Turning off the device according to Fig. 3 in emergency mode (one malfunction of the shutdown circuits) is carried out by the formation of a pulse at least by the source 20 or 21 of the shutdown signal with polarity according to Table 1. In this case, it is similar to switching off in normal mode, the voltage U _z → 0 of a pair of CMOS transistors 2, 3 or 8, 9 and this pair of CMOS transistors closes, the voltage multiplier unit 15 is de-energized, as a result of which the other pair of CMOS transistors is then closed. Similarly, in emergency mode (one failure of the shutdown circuits), the supply voltage switch is turned off according to FIG. 1 by the formation of a pulse control signal (off) at least by source 16 or 18.

Thus, one failure in any switching circuit will not affect the ability to disconnect output lines 4 and 10 from input lines 1 and 7. One failure in any switching circuit of any CMOS transistor 2, 3, 8, 9 will not affect the ability to disconnect output buses 4 and 10 from input buses 1 and 7 due to turning off another (serviceable) CMOS transistor in the circuit of their serial connection.

The reliability of supplying voltage to at least one reserve of the load system that receives supply voltage from a set of two of these devices in the event of any one failure in the supply voltage switch of any reserve of the load system is ensured together with the control system of the redundancy object that generates a signal [2] via the switching buses 17 and 19 of one or another power supply switch. In case of failure to switch on the supply voltage switch of one reserve of the system (or the corresponding reserve of its load), information about the failure of this reserve is sent to the control system of the redundant object. In this case, the control system of the redundancy object generates a signal to turn off each switch of the supply voltage. Then the control system of the object of redundancy generates a signal to turn on another (serviceable) switch of the supply voltage of the redundant systems [2]. Thus, two power supply switches of redundant systems ensure the operation of the load system in case of at least one failure in any reserve.

Technical result

The technical result is an increase in manufacturability, which consists in expanding the functionality that ensures the manufacture of a device using an unpackaged element base of power switches in the form of crystals. This makes it possible to manufacture a small-sized version of the supply voltage switch, for example, in the form of a microassembly.

Another positive effect of the device consists in connecting to the input buses of the supply voltage switch only the switched outputs of the power circuit of CMOS transistors with connections of the control circuits of the power CMOS transistors from the side of the output buses of the supply voltage switch. Such a structure has increased reliability. In the event of a failure (short circuit) of any element in the off mode, in any case, the customer's requirement for the absence of galvanic connections both between the input buses and between the input and output buses of circuits of any polarity remains.

Also, in the conditions of special application [3], the range of choice of power element base (CMOS transistor instead of optocoupler) is expanded and increased reliability of the supply voltage switch is ensured in the long term [4], and especially under conditions of exposure to elevated temperatures and a high level of background radiation.

Sources of information

1. Voltage switch with overcurrent protection. Patent RU 2208292, IPC H03K 17/08, 2003

2. Optoelectronic power supply relay for redundant systems. Patent RU 2746556, IPC H03K 17/08, 2020

3. Lebedinskaya A.E. et al. Radiation-resistant optoelectronic pair for secondary power sources // Elektronnaya tekhnika. Series 2. Semiconductor devices. Moscow, issue 1(256), 2020, pp. 40-48.

4. Digital isolator or optocoupler? http://aobzpp.ru/stati/#izolyator_optopara

5. Description of the scheme of a powerful DC voltage doubler. https://zen.yandex.ru/media/asutpp.ru/description-shemy-moscnogo-udvoitelia-postoiannogo-napriajeniia-5d78f75dd4f07a00c558582d

6. Dc-Dc converter. The device and principle of operation of the main circuits. https://powercoup.by/radioelektronika/dc-dc-preobrazovatel

Claims (3)

1. The method of switching the supply voltage, consisting in the fact that a power switch is installed in each bus of the supply voltage, to turn on the device, using the energy of the starting pulse source, an electric pulse is formed at the control input of each power switch, then these inputs are supplied with electrical signals of a constant level , which are formed using the energy from the output of the supply voltage switch, to turn off the device, they turn off the electrical signals of a constant level, characterized in that in order to improve manufacturability in one bus of the supply voltage, the power circuit of a CMOS transistor of one type of conductivity is used as a power switch, in the other bus supply voltage, the power circuit of a CMOS transistor of a different type of conductivity is used as a power switch, the starting pulse is formed as a voltage U _{with one polarity between the gate and source of the CMOS transistor in one supply voltage bus, and the starting pulse is formed as a voltage U zi d} polarity between the gate and source of a CMOS transistor in another supply voltage rail, DC level electrical signals are generated as two voltages U _const by multiplying the output voltage of the supply voltage switch, the polarity and voltage level U _const for CMOS transistors in one and the other supply voltage rails are generated in according to the polarity and voltage level _U of the starting pulse of the voltages in these supply voltage buses. 2. A supply voltage switch containing a first input supply voltage bus connected in series, a switching circuit of the first power switch, a switching circuit of the second power switch, a first output bus, a second input supply voltage bus connected in series, a switching circuit of the third power switch, a switching circuit of the fourth power switch , a second output bus, a turn-on bus connected to the first input of the diode block, characterized in that, in order to improve manufacturability, a second diode block, four resistors, a voltage multiplication unit, a second turn-on bus, are introduced into it in the first supply voltage bus as power switches CMOS transistors of one type of conductivity are used, CMOS transistors of another type of conductivity are used as power switches in the other supply voltage bus, two outputs of the first block of diodes are connected respectively to the gates of the first and second CMOS transistors, between the gate and the source of which, respectively, the primary th and second resistors, the second input of the first diode block is connected to the first output of the output voltage multiplication block, the positive and negative power leads of the voltage multiplication block are connected respectively to the output buses, the two outputs of the second diode block are connected respectively to the gates of the third and fourth CMOS transistors, between the gate and the source of which, respectively, the third and fourth resistors are connected, the first input of the second diode block is connected to the second switching bus, the second input of the second diode block is connected to the second output of the output voltage multiplying block. 3. The supply voltage switch according to claim 2, characterized in that two shutdown buses are introduced, connected respectively to the first and second shutdown inputs of the output voltage multiplication unit.

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