RU2749572C1 - Microwave housing for microwave semiconductor electronics product - Google Patents

Abstract

FIELD: microwave electronics.SUBSTANCE: invention relates to microwave electronics, namely to a case for surface mounting of a product of semiconductor microwave electronics. Disclosed is a microwave housing for a microwave semiconductor electronics product, having a base and a cover, which are hermetically connected by a metal rim, at least three through metallized holes are made in the base. There is at least one external "earthen" metallized bond area and at least one internal "earthen" metallized bond area corresponding to the external one in the central part of the outer and inner sides of the base. They are electrically connected in pairs. There are at least three external and at least three internal outputs corresponding to the external outputs along the periphery of the outer and inner sides of the base outside the external and corresponding internal ground metallized bond areas. The outputs are used for the location and subsequent connection of the crystal or crystals of the microwave product. All the outputs form at least two sections of the coplanar line, respectively, electrically connected in pairs. The grounded conductors of each section of the coplanar line are connected to the external and corresponding internal ground metallized bond areas and a metal rim, in which the base and the cover are made of diamond. The base, metal rim, external and corresponding internal "earthen" metallized bond areas, external and corresponding internal outputs, through metallized holes are made in the form of a single monolithic planar board. The metal rim is made along the perimeter of the single monolithic planar board. The metal rim, the outer and corresponding inner "earthen" metallized bond areas, the outer and corresponding inner outputs are made in the form of a multilayer metallized coating with high electrical conductivity. The cover has a three-dimensional shape. Its inner surface is covered with a multilayer metallized coating with high electrical conductivity. All external and internal "earthen" metallized bond areas corresponding to the external ones, all external and internal outputs corresponding to the external ones are connected in pairs by means of through metallized holes.EFFECT: increasing the operating frequency to 40 GHz, reducing microwave losses, reducing the voltage standing wave ratio (VSWR), improving heat dissipation, simplifying the design, increasing reliability, expanding functionality while maintaining the electrical and radio shielding characteristics.5 cl, 3 dwg

Description

The invention relates to microwave electronics, namely to a case for surface mounting of a product of semiconductor microwave electronics.

One of the main functions of a case for a microwave semiconductor electronic equipment product (hereinafter referred to as a microwave product) is to provide:

tightness and reliability and, above all, from the point of view of protection against environmental influences, which negatively affect the parameters of microwave products,

effective heat removal from the microwave product and, above all, in order to obtain the maximum allowable microwave output power;

durability of the microwave product and especially when operating in high microwave power levels,

minimum weight and size characteristics,

reliable planar connection of the case with other elements of the microwave device and systems of radio-electronic equipment microwave,

high operating frequency, over 40 GHz.

Known is a cermet housing for a microwave semiconductor device containing a heat sink base, a frame with through holes for cermet inputs / outputs located on one of the surfaces of the heat sink base around its perimeter, at least one metal contact pad for the location and subsequent connection of the crystal to it, or crystals of a semiconductor device, located on the said surface of the heat sink base, at least two sintered inputs / outputs, one contact pads that go out to the said surface of the heat sink base, and others through the through holes in the frame to the outside, while the sintered inputs / outputs are connected to brazed frame.

In which, in order to increase reliability, durability, manufacturability, reduce the labor intensity of manufacturing, reduce weight and size characteristics, the heat sink base and frame are made monolithic, the latter is in the form of a side along its perimeter, with a thickness equal to not more than 2.0 mm, sintered inputs / outputs They are also made monolithic in the form of a conductor made of metal or an alloy of metals having low electrical resistance, located inside a tube with an internal section size equal to 0.2-1.0 mm, made of pre-fired ceramics, sintered inputs / outputs and, accordingly, through holes for they are made in a frame of circular cross-section, the cross-sectional size of which, the length of the sintered inputs / outputs, as well as the dimensions of the sections of their conductors and the size of their contact pads are determined by the specified parameters of the semiconductor device, and the contact pads are made at the ends of the sintered inputs / outputs in parallel and / or perpendicular to them axes [ Patent 2351037 RF. Case for a microwave semiconductor device and a method for its manufacture / Lyapin L.V. et al. // Bul. - 2009 - No. 9 /].

Disadvantages of this case -

- limited range of operating frequencies,

- restrictions on the possibility of using the case for surface mounting of microwave products with a large number of leads and different levels of microwave output power.

At present, surface mount technology (TMP, SMT, SMD) is widely used in semiconductor microwave electronics, since it has a number of advantages over traditional technologies, namely:

improved electrical performance,

high packing density,

reduction of weight and size characteristics.

A known method of surface mounting a product of semiconductor microwave electronics in a plastic case, which consists in applying solder paste to the switching boards by screen printing, then positioning discrete IC components in plastic cases and mounting. [Mengin I.G. et al. / Technology of surface mounting // M., Iz-vo "Mir", p. 258-259./] Disadvantage -

- the occurrence of internal stresses in various elements of the housing due to a significant difference in their temperature coefficient of linear expansion (TCLE) of materials and further ingress of moisture, which leads the microwave product to rejection;

- limitations in terms of providing a high operating frequency, more than 40 GHz and the possibility of using microwave products of various power levels.

Known is a surface-mounted hermetic case for a microwave semiconductor electronics product, which, in order to improve hermeticity, improve electrical and radio-shielding characteristics, and enable the use of a case for surface-mounted microwave large-scale integrated circuits (LSI), contains a multilayer ceramic base, a metal rim hermetically connected to it and an adjacent the metal cover is hermetically sealed to the metal rim, while on the outer and inner sides of the ceramic base along the periphery there are external and corresponding internal metallized contact pads, electrically connected in pairs, in the central part there are central "earthen" contact metallized pads, electrically connected to each other, on the outer side of the ceramic base along the periphery - external "earthen" metallized contact pads, and some of the inner and outer metallized contacts located along the periphery These pads are additionally connected electrically with external and central "earthen" metallized contact pads, and a metal rim, while all metallized contact pads are electrically connected by means of metal conductors located inside the ceramic base [Patent 2489769 RF. Sealed case for a semiconductor device or integrated circuit of the microwave range / Babak A.G. et al. // Bul. - 2013 - No. 22 /] - prototype.

This package provides electrical shielding characteristics and the ability to use a package for surface mount transistors and microwave integrated circuits (IC) with a large number of leads.

Disadvantages of this case:

limited operating frequency range (17 GHz), due to the high relative dielectric constant of 9.6 alumina ceramic A1203, leading to increased parasitic capacitance of "earth" metallized contact pads and parasitic inductances of metal conductors located inside the multilayer ceramic base,

limited power dissipation due to the low thermal conductivity (40 W / m × ° K) of the alumina ceramic Al ₂ O ₃ ,

This allows this package to be used to seal only low-power transistors and microwave ICs operating in the lower part of the centimeter wavelength range.

The technical result of the claimed microwave housing for microwave semiconductor electronics products is to increase the operating frequency to 40 GHz, reduce microwave losses, decrease the voltage standing wave ratio (VSWR), improve heat dissipation, simplify the design, increase reliability, expand functionality while maintaining electrical and radio shielding characteristics.

The specified technical result is achieved by the declared microwave housing for a product of microwave semiconductor electronics, containing

base and cover, hermetically connected by a metal rim, at least three through metallized holes are made in the base,

in the central part of the outer and inner sides of the base, at least one outer and corresponding to it at least one inner "earthen" metallized contact pads are made, electrically connected in pairs, for the subsequent arrangement and connection of the crystal or crystals of the microwave product,

along the periphery of the outer and inner sides of the base outside the outer and corresponding inner "earthen" metallized contact pads, at least three outer and corresponding to them at least three inner terminals are made, electrically connected in pairs, with each three terminals are a segment of a coplanar transmission line, the grounded conductors of which are connected to the external and corresponding internal "earth" metallized contact pads and a metal rim.

In which

the base and cover are made of diamond material, while

base, metal rim, external and corresponding internal "earthen" metallized contact pads, external and corresponding internal leads, through metallized holes are made in the form of a single monolithic planar board, while

metal rim is made around the perimeter of a single monolithic planar board,

metal rim, external and corresponding internal "earthen" metallized contact pads, external and corresponding internal leads are made in the form of a multilayer metallization coating with high electrical conductivity,

the cover is made of a volumetric shape, on the inner surface of which a multilayer metallization coating with high electrical conductivity is made,

external and corresponding internal "earthen" metallized contact pads, each external and corresponding to each internal leads are connected in pairs by means of the mentioned through metallized holes.

A microwave semiconductor electronics product is a microwave semiconductor device or an integrated microwave circuit.

The material diamond is a polycrystalline diamond film.

The sealed connection is made in the form of a soldered joint.

The shape and size of the package, including the shape and size of the volumetric cover, is determined by the shape and size of the crystal or crystals of a microwave semiconductor electronics product, and the number of external and corresponding internal leads is not less than the number of its leads.

Disclosure of the essence of the invention.

The set of essential features of the claimed microwave housing for semiconductor microwave electronics and each separately provide, namely.

Execution of the base and the cover of the case from the same material - the material is diamond, which has

firstly, a low relative dielectric constant of less than 5.6,

secondly, a high thermal conductivity coefficient of more than 1000 W / m × ° K,

in contrast to the material of the prototype - alumina ceramics (Al ₂ O ₃ ), which has a high relative dielectric constant, of the order of 9.6 and a low coefficient of thermal conductivity, of the order of 40 W / m × ° K.

It provides.

Firstly, due to the first - a decrease in the parasitic capacitance of the external and the corresponding internal "earth" metallized contact pads and, as a consequence, - a significant increase in the upper operating frequency, up to 40 GHz.

Secondly, thanks to the second, a significant decrease in thermal resistance and, as a consequence, a significant improvement in the efficiency of heat removal from a microwave product.

Thirdly, due to the design of the base and the case cover from the same material - diamond material and, accordingly, having one temperature coefficient of linear expansion (TCLE) and thereby - the maximum consistency of the body elements (self-consistent body) and, as a consequence, -

a) increasing the reliability, the latter is especially important when operating in the mode of high levels of microwave output power, at which, as is known, the thermal loads on the elements of the microwave product increase, which can lead to its failure,

b) expansion of functionality, due to the possibility of using the case for microwave products of various levels of microwave output power (low-power, medium and high-power),

c) reduction of microwave losses.

The execution of the base, metal rim, external and corresponding internal "earthen" metallized contact pads, external and corresponding internal leads, through metallized holes in the form of a single monolithic planar board ensures the exclusion of one of the sealed connections of the case - between the base and the metal rim and, as consequence, -

firstly, the simplification of the design,

secondly, increased reliability.

The execution of a metal rim around the perimeter of a single monolithic planar board provides the maximum and optimal possible internal area and volume of the microwave case.

The execution of a metal rim, external and corresponding internal "earthen" metallized contact pads, external and corresponding internal leads, through metallized holes in the form of a multilayer metallized coating with high electrical conductivity ensures the preservation of electrical and radio shielding characteristics.

The implementation of a three-dimensional cover, on the inner surface of which a multilayer metallization coating with high electrical conductivity is made, provides:

firstly, the maximum and optimal possible internal area and volume of the microwave housing,

secondly, the possibility of hermetic connection with the base of the case.

The connection in pairs to each other of each external and corresponding to each internal "ground" metallized contact pads, each external and corresponding to each of the internal terminals by means of only through metallized holes provides complete elimination of connecting conductors and thereby a significant reduction in parasitic inductances and, in combination with low parasitic inductance through metallized holes and, as a consequence, in addition to the above-mentioned increase in the upper limit of the operating frequency.

Moreover, the combination of all the declared features provides a decrease in microwave output power losses and a decrease in the voltage standing wave ratio.

So, the set of essential features of the declared microwave housing for a microwave semiconductor electronics product fully ensures the claimed technical result, namely, increasing the operating frequency to 40 GHz, reducing microwave losses, reducing the voltage standing wave ratio (VSWR), improving heat dissipation, simplifying designs, increasing reliability, expanding functionality while maintaining electrical and radio shielding characteristics.

The invention is illustrated by drawings.

FIG. 1 (a, b, c) gives a general view of the claimed microwave case for a microwave semiconductor electronics product - in section (a), inner side (b), outer side (c), where

- base - 1,

- cover - 2,

- metal rim - 3,

- at least three through metallized holes - 4, 5, 6, respectively,

- at least one external - 7 and corresponding to it, at least one internal - 8 "earthen" metallized contact pads,

- at least three external - 9, 10, 11 and corresponding to them, at least three internal terminals - 12, 13, 14, respectively,

- single monolithic planar board - 15,

- multilayer metallization coating - 16,

- multilayer metallization coating of the cover - 17.

FIG. 2 and 3 give particular cases of its implementation for products of semiconductor electronic equipment microwave - Field-effect transistor 3P976 KRPG.432152.024, Microwave low-noise amplifier module M4221317 KRPG.434815.335, respectively.

Examples of specific implementation of the claimed microwave housing for a product of semiconductor microwave electronics.

Example 1. A sample of a microwave package for a product of semiconductor electronic equipment microwave is made - the KRPG.432136.006 diode is a rectangular crystal, size 0.6 × 0.5 mm, one microwave output (Fig. 1).

The microwave housing contains:

base 1, cover 2, hermetically connected by means of a metal rim 3.

In this case, the shape and size of the microwave case (base and cover) is determined by the shape and size of the crystal - KRPG.432136.006 diode, rectangular crystal, size 0.6 × 0.5 mm, one microwave output.

Performance.

Base 1 and cover 2 are made of diamond material, which is a polycrystalline diamond film grown by chemical vapor deposition (CVD), 150 μm thick, rectangular, 2.0 × 1.5 mm in size.

In this case, the cover is made of a three-dimensional shape, with a height not less than the height of the mentioned crystal - KRPG.432136.006 diode.

Base 1, metal rim 3, external 7 and corresponding internal 8 "earthen" metallized contact pads, external 9, 10, 11 and corresponding internal 12, 13, 14 terminals, through metallized holes 4, 5, 6 are made in the form of a single monolithic planar board 15.

Wherein.

In the central part of the outer and inner sides of the base 1, external 7 and the corresponding internal 8 "earthen" metallized contact pads are made, electrically connected in pairs, for the location of the crystal - Diode KRPG.432136.006 rectangular crystal, size 0.6 × 0.5 mm, one microwave output.

Along the periphery of the outer and inner sides of the base 1 outside the outer 7 and the corresponding inner 8 "earthen" metallized contact pads, three outer 9, 10, 11 and corresponding three inner 12, 13, 14 terminals are made, electrically connected in pairs, while each three pins represent a piece of coplanar transmission line, the grounded conductors of which are connected to the outer 7 and the corresponding inner 8 "earthen" metallized contact pads and a metal rim 3.

The metal rim 3 is made along the perimeter of a single monolithic planar board 15.

Metal rim 3, external 7 and corresponding internal 8 "earthen" metallized contact pads, external 9, 10, 11 and corresponding internal 12, 13, 14 terminals, through metallized holes 4, 5, 6 are made in the form of a multilayer metallized coating 16 with high electrical conductivity, titanium (TU-48-4282-86) - nickel (NPOEV and GOST 2170-73) - gold, deposited by vacuum deposition (URM 3279), followed by deposition of a gold layer - by galvanic deposition according to RD 11054272-81, with a total thickness of 2 microns.

External 7 and the corresponding internal 8 "earthen" metallized contact pads, each external 9, 10, 11 and corresponding to each internal 12, 13, 14 terminals are connected in pairs by means of through metallized holes 4, 5, 6.

Base 1 and cover 2 are connected by means of a metal rim 3 of a single monolithic planar board 15 by soldering with a gold-tin alloy (PZlo80 TU 1868-385-057853-2024 2015).

In this case, a single monolithic planar board 15 and a cover 2 are made according to the traditional group technology for the manufacture of microwave integrated circuits and the technology of deep plasma-chemical etching.

Example 2-3.

The microwave case is made similar to example 1, but for products of semiconductor microwave electronics:

Field-effect transistor 3P976 KRPG.432152.024, rectangular crystal, size 1.2 × 0.6 mm, three microwave leads (Fig. 2),

Low-noise microwave amplifier module M4221317 KRPG.434815.335 square crystal, size 1.4 × 1.4 mm, sixteen microwave leads (Fig. 3).

Manufactured samples of the microwave case.

1. Tested for reliability.

The reliability was assessed by the thermal cycling method at a certain mode according to OST 11332.702-89.

2. Measured:

a) microwave losses, dB and standing wave ratio (VSWR) in the operating frequency range up to 40 GHz,

b) coefficient of thermal conductivity, W / m × ° K.

Samples of the declared microwave housing.

1. Successfully passed reliability tests - complete preservation of integrity after thermal cycling.

2. Have:

microwave losses of the order of 0.5 dB and the standing wave ratio (VSWR) of the order of 1.5 in the operating frequency range up to 40 GHz

thermal conductivity coefficient of the order of 1000 W / m × ° K.

Thus, the declared microwave case for a product of semiconductor electronic equipment microwave, in comparison with the prototype, will provide:

increasing the operating frequency up to 40 GHz (prototype - up to 17 GHz),

improved heat dissipation by more than 10 times,

simplification of the design,

increased reliability by more than 3 times,

Expansion of functionality - ensuring the possibility of using a microwave case for products of semiconductor microwave electronics of all levels of microwave output power (low-power, medium and high-power), the latter is especially important.

Claims (13)

1. A microwave case for a microwave semiconductor electronics product, containing base and cover, hermetically connected by a metal rim, at least three through metallized holes are made in the base, in the central part of the outer and inner sides of the base, at least one outer and corresponding to it at least one inner "earthen" metallized contact pads are made, electrically connected in pairs, for the subsequent arrangement and connection of the crystal or crystals of the microwave product, along the periphery of the outer and inner sides of the base outside the outer and the corresponding inner "earthen" metallized contact pads, at least three external and corresponding to them, at least three internal leads are made, electrically connected in pairs, with each three leads are a segment of a coplanar transmission line, the grounded conductors of which are connected to the external and corresponding internal "earth" metallized contact pads and a metal rim, characterized in that the base and cover are made of diamond material, while base, metal rim, external and corresponding internal "earthen" metallized contact pads, external and corresponding internal leads, through metallized holes are made in the form of a single monolithic planar board, while the metal rim is made along the perimeter of a single monolithic planar board, metal rim, external and corresponding internal "earthen" metallized contact pads, external and corresponding internal leads are made in the form of a multilayer metallization coating with high electrical conductivity, the cover is made of a volumetric shape, on the inner surface of which a multilayer metallization coating with high electrical conductivity is made, external and corresponding internal "earthen" metallized contact pads, each external and corresponding to each internal leads are connected in pairs by means of the mentioned through metallized holes. 2. The microwave housing according to claim 1, characterized in that the product of the microwave semiconductor electronics is a microwave semiconductor device or a microwave integrated circuit. 3. The microwave housing according to claim 1, characterized in that the diamond material is a polycrystalline diamond film. 4. Microwave housing according to claim 1, characterized in that the hermetic joint is made in the form of a soldered joint. 5. The microwave housing according to claim 1, characterized in that the shape and size of the housing, including the shape and size of the volumetric cover, are determined by the shape and size of the crystal or crystals of the microwave semiconductor electronics product, and the number of external and corresponding internal leads is not less the number of his findings.

Images