RU2748658C1 - Device for deposition or cleaning with mobile structure and method for its operation - Google Patents

Abstract

FIELD: treatment of substrates.

SUBSTANCE: group of inventions relates to a device for the treatment of substrates by deposition or cleaning and to a method of processing using the specified device. The said device contains an external chamber, a reaction chamber with the possibility of feeding into it a chemically inactive gas or precursor, while the reaction chamber is located inside the outer chamber to form a two-chamber structure, a line for supplying a chemically inactive gas or precursor to the reaction chamber and a movable element located under the reaction chamber and configured to provide vertical movement of the reaction chamber between a processing position and a lower position within the outer chamber. The lower position of the reaction chamber is intended for loading into it at least one substrate. The said movable element forms part of the outlet line of the device. The specified method includes moving the reaction chamber to the lower position for loading at least one substrate into the reaction chamber, lifting the reaction chamber to the deposition or cleaning position for treating the specified at least one substrate by deposition or cleaning with the supply of a chemically inactive gas or precursor to the reaction chamber. After processing, the reaction chamber is again moved to the lower position and the at least one substrate is discharged.

EFFECT: improved method and apparatus are provided for loading and unloading substrates and minimizing particle generation.

15 cl, 8 dwg

Description

The technical field to which the invention relates

The present invention generally relates to deposition or purification devices and methods for their operation. In particular, but not exclusively, the invention relates to reactors for processing substrates with movable structures.

State of the art

This section provides useful background information without recognizing any technique disclosed in this document as being in the art.

In traditional deposition or cleaning processes, substrates such as wafers are moved within vacuum cluster structures. These structures should emit a minimum amount, or preferably not emit additional particles falling on the substrates. Any mechanical or moving part above the substrate is a potential source of particles that can affect deposition quality. For some applications and geometries, moving parts in the prior art can no longer provide an acceptable solution.

US Pat. No. 9,095,869 B2 discloses a deposition reactor structure comprising a substrate transfer chamber between the plasma source and the reaction chamber. The transfer chamber contains a movable part for supplying the reagent on the upper side of the reaction chamber. The feed part is vertically deformable, having a compressible and expandable shape. The compressible form allows the substrates to be loaded into the reaction chamber along a route formed by the compression of the feed piece.

Disclosure of invention

It is an object of embodiments of the present invention to provide an improved method and apparatus for loading and unloading substrates and minimizing or eliminating the problem caused by particle generation.

According to a first illustrative aspect of the present invention, there is provided a deposition or purification apparatus comprising:

outdoor camera;

a reaction chamber within the outer chamber forming a two-chamber structure in which the reaction chamber is movable between a processing position and a lower position within the outer chamber, the lower position being for loading one or more substrates into the reaction chamber.

Unlike the prior art in which the reaction chamber is stationary and other structures move, embodiments of the present invention move the reaction chamber itself. The reaction chamber is movable in a vertical direction or at least partially in a vertical direction. The movable reaction chamber also includes a side wall of the movable reaction chamber. In some illustrative embodiments, the moveable reaction chamber is a monolithic structure. In some illustrative embodiments, the implementation of the reaction chamber forms a single unit. In some illustrative embodiments, the movement of the reaction chamber is initiated from below (from under the reaction chamber).

In some illustrative embodiments, the movable parts of the reaction chamber are located under the substrate (i.e., not at the top). In some illustrative embodiments, the overall reaction chamber is movable. In some illustrative embodiments, the side wall of the reaction chamber is movable with the rest of the reaction chamber. In some illustrative embodiments, the distance between the bottom of the reaction chamber and the side wall of the reaction chamber is constant during movement. In some illustrative embodiments, the outer chamber does not move, i.e., the outer chamber is stationary.

The processing position can be a settling position and / or a cleaning position.

In some illustrative embodiments, the apparatus is configured to form a feed opening into the reaction chamber by moving the reaction chamber downwardly.

In some illustrative embodiments, the reaction chamber is configured to detach from an upper stationary part (i.e., a stationary part upper relative to the movable reaction chamber) by moving the reaction chamber downward to open a loading path. In some illustrative embodiments, the upper stationary part is a part for supplying fluid to the reaction chamber.

The part at the top of the movable reaction chamber (ie, the upper stationary part of the apparatus) can be an open or closed part. This can be a wide tube, such as a radical delivery part, extending from a radical source. Or it could be, for example, a lid-shaped piece, optionally containing an expansion volume for distributing the fluid in the downward direction.

In some illustrative embodiments, the reaction chamber forms a rotationally symmetric housing. The reaction chamber can be a bowl-shaped piece (having an outlet in the bottom).

In some illustrative embodiments, the device comprises:

a loading port on the side of the outer chamber for loading one or more substrates into the reaction chamber through the side wall of the outer chamber. In some illustrative embodiments, the loading port is a loading gateway. In some illustrative embodiments, the loading port is a vacuum seal or door.

In some illustrative embodiments, the device comprises:

a movable element made with the possibility of providing vertical movement of the reaction chamber. In some illustrative embodiments, the movable element is connected to the reaction chamber. The movable element can be a flexible structure. The movable element can be a gas-tight structure.

In some illustrative embodiments, the movable element forms part of the outlet line of the device. The outlet line can be a foreline line. In some illustrative embodiments, the implementation of the reaction chamber includes an outlet line opening in the bottom of the reaction chamber. In some illustrative embodiments, the reaction chamber includes an outlet line opening located symmetrically at the center of the bottom of the reaction chamber. In some illustrative embodiments, the movable element is placed symmetrically under the bottom of the reaction chamber. In some illustrative embodiments, the movable member is positioned, viewed laterally, centered under the bottom of the reaction chamber.

In some illustrative embodiments, the movable member is an adjustable length tubular elongated structure. Accordingly, in some illustrative embodiments, the movable element is a hollow deformable element. In some illustrative embodiments, it allows fluid to flow through it in a vertical direction, but has gas-tight sidewalls.

In some illustrative embodiments, the movable element is a bellows. In some illustrative embodiments, the movable element is a vacuum bellows. In some illustrative embodiments, the movable element (vacuum bellows or similar device) is completely in a vacuum.

In some illustrative embodiments, the movable element is implemented with two (or more) cross-folded or nested tubes that are vertically movable relative to each other.

In some illustrative embodiments, the device comprises an actuator that initiates vertical movement of the reaction chamber. Initiation can take place by applying force to the reaction chamber so that the reaction chamber moves as allowed by the movable element. The placement of the actuator depends on the practical implementation. In some illustrative embodiments, the actuator is located outside the outer chamber. In some illustrative embodiments, the implementation of the actuator is located inside the outer chamber, but outside the reaction chamber. In some illustrative embodiments, the actuator is located within the outlet line. In some illustrative embodiments, the implementation of the actuator is missing. In one such embodiment, the movable element as such moves the reaction chamber without an external actuator ("external" here means external to the movable element). This movement can be realized by radiation or temperature changes, for example. In one illustrative embodiment, the movable member is formed by a shape memory alloy (shape memory alloy), so the movable member is itself a driving device.

In some illustrative embodiments, the device comprises a substrate holder. The substrate holder can support the substrate, such as a wafer, in a horizontal position. In some illustrative embodiments, the substrate is a semiconductor wafer with a diameter of 450 mm. In other embodiments, the substrate is a semiconductor wafer with a diameter less than 450 mm, such as 300 mm. The deposition or cleaning process can be performed on horizontally oriented substrate (s). In an alternative embodiment, the substrate is vertically oriented. The substrate holder can support one vertically oriented substrate or a plurality of vertically oriented substrates. Depending on the practical implementation, the substrates during loading can be oriented horizontally or vertically. The underlays can be loaded one at a time or as a batch.

In some illustrative embodiments, the substrate holder is attached to the outlet line. In some illustrative embodiments, the substrate holder is configured to be embedded in or integrated into the top of the reaction chamber lid. The substrate holder may be movable, for example, vertically. It can be made with heating and / or other electrical regulation. In some illustrative embodiments, the device is implemented without a substrate holder. In such an embodiment, the substrate may be supported by the wall (s) of the reaction chamber and / or by the top edge of an optional security member positioned within the outlet line and configured to prevent material from depositing on the movable member during processing.

In some illustrative embodiments, the device comprises:

a heater inside the outer chamber, but outside the reaction chamber.

In some exemplary embodiments, the device comprises an opening for introducing a non-reactive gas into the outer chamber in an intermediate space defined between the walls of the reaction chamber and the outer chamber, and an opening for discharging inactive gas from the intermediate space. Intermediate space is herein defined as the volume within the outer chamber surrounding the reaction chamber. The outer chamber can be formed by a pressure vessel. The outer chamber can be called a vacuum chamber due to the vacuum conditions created in it. In some illustrative embodiments, both the reaction chamber and the outer chamber are in a vacuum during loading of the substrates (and during processing, ie, deposition and / or cleaning). In some illustrative embodiments, the outer and reaction chambers contain separate walls, i.e., they do not have common walls, but the outer chamber actually contains the reaction chamber (separated by the intermediate space).

In some illustrative embodiments, the inner surface of the plunger is pressurized by the outlet line. In some illustrative embodiments, the outer surface of the plunger experiences a higher pressure than the pressure within the outlet line. The higher pressure may be the pressure within the interstitial space or the ambient pressure in some embodiments.

In some illustrative embodiments, the gas flow within the reaction chamber is from top to bottom. The gas or liquid is preferably fed into the reaction chamber from the upper side of the reaction chamber and the outlet is from the lower part of the reaction chamber (below the substrate), for example through the bottom or the bottom of the reaction chamber into the outlet line.

In some illustrative embodiments, the gas flow within the reaction chamber is directed in whole or in part from side to side over a horizontally oriented substrate. The supply of gas or liquid to the reaction chamber in this embodiment is provided from the side or offset from the center of the substrate.

In some illustrative embodiments, a movable reaction chamber encompasses a reaction space (in which the desired precipitation or purification reactions are to take place).

In some illustrative embodiments, the device is an Atomic Layer Deposition (ALD) device. In this context, the term "ALD" includes subtypes of ALD, such as MLD (Molecular Layer Deposition), plasma ALD, such as PASO (Plasma Stimulated Atomic Layer Deposition) and Photostimulated Atomic Layer Deposition (also known as stimulated by the ASO flash). In alternative illustrative embodiments, the device is a chemical vapor deposition (CVD) device. In alternative illustrative embodiments, the device is a plasma-assisted purification device.

In some illustrative embodiments, the device comprises a deformable part above the substrate (s), as in US Pat. No. 9,095,869 B2, to characterize the feed part of the reaction chamber. The deformable part can be formed by bellows or crossed tubes as deformable components.

In some illustrative embodiments, the pressure inside both the reaction chamber and the outer chamber (if any) is below external or atmospheric pressure, so the apparatus is adapted to treat substrates at such reduced pressure.

According to a second illustrative aspect of the present invention, there is provided a method including the following steps:

provide a reaction chamber of the reactor for sedimentation or purification with a processing position and a lower position; and

moving the reaction chamber between the processing position and the lower position, the lower position being for loading one or more substrates into the reaction chamber.

In some illustrative embodiments, the method includes the following step:

a loading hole is formed into the reaction chamber by moving the reaction chamber in the downward direction.

In some illustrative embodiments, the implementation of the reaction chamber contains or is formed from a reaction chamber housing or a reaction vessel. In some illustrative embodiments, the method includes moving a reaction chamber body or reaction vessel as a whole.

In some illustrative embodiments, the method includes the following step:

detach the reaction chamber from the upper stationary part while moving the reaction chamber in the downward direction.

In some illustrative embodiments, the method includes the following step:

load one or more substrates into the reaction chamber through the side of the outer chamber surrounding the reaction chamber.

In some illustrative embodiments, the method includes the following step:

moving the reaction chamber with a gas-tight resilient element such as a vacuum bellows.

In some illustrative embodiments, the method includes the following step:

moving the reaction chamber by means of an element located in the outlet line of the reactor for sedimentation or purification.

In some illustrative embodiments, the method includes providing an interstitial space formed between the walls of the reaction chamber and the outer chamber at a pressure greater than the pressure within the reaction chamber.

In some illustrative embodiments, the method is implemented in a precipitation or purification reactor having an outer chamber and a reaction chamber within the outer chamber.

In some illustrative embodiments, the method includes the practice of applying an Atomic Layer Deposition (ALD) method onto one or more substrates within a reaction chamber. In some illustrative embodiments, the method includes the practice of applying a chemical vapor deposition (CVD) method onto one or more substrates within a reaction chamber. In some illustrative embodiments, the method includes the practice of a purification process, such as a plasma-assisted purification process within a reaction chamber.

According to a third illustrative aspect of the present invention, there is provided a deposition or purification reactor (reactor or substrate treatment apparatus) comprising means for carrying out a method according to a second aspect or any of the embodiments according to the second aspect.

Various non-binding illustrative aspects and embodiments of the present invention have been presented above. The above embodiments are used simply to explain selected aspects or steps that may be applied in the practice of the present invention. Some embodiments may be presented only with reference to some illustrative aspects of the invention. It should be understood that the corresponding embodiments also apply to other illustrative aspects. Any suitable combination of embodiments can be formed.

Brief Description of Drawings

The present invention will now be disclosed, by way of example only, with reference to the accompanying drawings.

FIG. 1 shows a schematic side view of a device during the loading phase in accordance with an embodiment of the invention.

FIG. 2 is a schematic side view of the device disclosed in FIG. 1 in a processing step in accordance with an embodiment of the invention.

FIG. 3 shows a schematic side view of a device in accordance with an alternative embodiment of the invention.

FIG. 4 shows a schematic side view of a device in accordance with another embodiment of the invention.

FIG. 5 shows some details of a device in accordance with one embodiment of the invention.

FIG. 6 shows a schematic side view of a device in accordance with another alternative embodiment of the invention.

FIG. 7 shows a schematic side view of a device in accordance with yet another alternative embodiment of the invention.

FIG. 8 depicts a method in accordance with one embodiment of the invention.

Implementation of the invention

In the following description, Atomic Layer Deposition (ALD) technology is used as an example. However, the invention is not limited to ALD technology, but can be used in a variety of deposition devices such as chemical vapor deposition (CVD) reactors as well as purification reactors.

The basics of the ASO growth mechanism are known to the skilled person. ASO is a special chemical deposition method based on the sequential introduction of at least two reactive precursor compounds onto at least one substrate. However, it should be understood that one of these reactive precursors can be replaced by energy using photostimulated ALD or plasma-stimulated ALD, for example, PASO, which leads to one-precursor ALD processes. Thin films grown with ALD are dense, free from point defects, and have a uniform thickness.

The at least one substrate is typically exposed to time-separated pulses of precursors in a reaction vessel to deposit material on the surfaces of the substrates through successive self-saturating surface reactions. In the context of this application, the term "ALD" includes all applicable ALD methods and any equivalent or related technologies, such as, for example, the following types of ALD: MLD (Molecular Layer Deposition), ALD using plasma, for example, PASO ( plasma-assisted atomic-layer deposition) and photostimulated atomic-layer deposition (also known as flash-stimulated ALD).

The main ALD deposition cycle consists of the following four stages: pulse A, purge A, pulse B, and purge B. Pulse A consists of the vapor of the first precursor, and pulse B consists of the vapor of the other precursor. A non-reactive gas and a vacuum pump are typically used to purge gaseous reaction by-products and residual reactant molecules from the reaction space during purge A and purge B. The deposition layer sequence includes at least one deposition cycle. The deposition cycles are repeated until a thin film or coating of the desired thickness is obtained through a sequence of deposition layers. Deposition cycles can also be simpler or more complex. For example, the cycles may include three or more pulses of reagent vapor separated by purge steps, or some purge steps may be omitted. All of these deposition cycles form a time sequence of deposition layers overlapping, which is controlled by a logic block or microprocessor.

FIG. 1 and 2 are schematic side views of a deposition or purification apparatus in accordance with an illustrative embodiment of the invention. The device includes an outer chamber wall defining the outer chamber 110. The device further comprises a reaction chamber 120 within the outer chamber 110, thereby forming a two-chamber structure. The space formed between the wall of the outer chamber and the reaction chamber 120 (e.g., the space defined by the outer chamber 110 and surrounding the reaction chamber 120) is defined as the intermediate space 111, and the space within the reaction chamber 120 as the reaction space 112, as shown in FIG. 2.

The reaction chamber 120 is movable between a deposition or cleaning position (FIG. 2) and a lower position (FIG. 1) within the outer chamber 110. The lower position is for loading one or more substrates 105 into the reaction chamber. The deposition or cleaning position is for treating one or more substrates 105 in accordance with the selected deposition or cleaning method, such as ALD or CVD.

The device includes a loading port 115 at the side of the outer chamber 110 for loading one or more substrates 105 into the reaction chamber 120 through the side wall of the outer chamber 110. The loading port 115 shown depicts the loading sluice 115, although in alternative embodiments the loading sluice 115 may be eliminated and replaced by more a simple structure such as a door or similar. In some illustrative embodiments, the loading port 115 may be a vacuum seal or a loading sluice for environmental protection or other equipment.

The device includes a movable element 140 connected to the reaction chamber 120. The movable element 140 allows the reaction chamber 120 to move vertically between the deposition or cleaning position and the lower position. The movable element 140 can be a flexible structure. It can be a tubular elongated structure with an adjustable length. The movable member 140 may be a deformable component. The movable member 140 shown in FIG. 1 and 2, is a bellows, in particular a vacuum bellows, allowing fluid to pass through it in a vertical direction, but having gas-tight side walls. The movable member 140 may form part of the outlet line 150 below the reaction chamber 120, as shown in FIG. 1 and 2. The movable member 140 is completely disposed within the walls of the outer chamber 110 under vacuum.

The actual movement of the reaction chamber 120 may be driven by the actuator (actuator) or by the movable member 140 itself. In the embodiment of FIG. 1 and 2 show a drive unit 145 located outside of the outer chamber 110. The drive unit 145 applies force to the reaction chamber 120 to move the reaction chamber as allowed by the movable member 140. The drive unit 145 shown in FIG. 1 and 2, comprises a force transfer element, such as a rod or rod, extending through the passage opening of the outer chamber into the intermediate space between the outer chamber 110 and the reaction chamber 120. The force transfer element is further in contact with the reaction chamber 120, allowing the reaction chamber to move as allowed by the movable member 140. The movable member 140 has a compressible shape as shown in FIG. 1, and an expandable shape as shown in FIG. 2, and allows the reaction chamber 120 to move vertically between the positions defined by these shapes.

In other embodiments, the placement, shape, and operation of the actuator may differ from those shown in FIG. 1 and 2. The placement of the actuator depends on the practical implementation. In some illustrative embodiments, the actuator is located outside the outer chamber. In some illustrative embodiments, the implementation of the actuator is located inside the outer chamber, but outside the reaction chamber. In some illustrative embodiments, the actuator is located within the outlet line 150. Depending on the practical implementation, the settling or cleaning device may include a plurality of actuators.

In some illustrative embodiments, the implementation of the actuator is completely eliminated. In one such embodiment, the movable member 140 as such moves the reaction chamber without an external actuator ("external" herein means external to the movable member). This movement can be realized by radiation or temperature changes, for example. FIG. 3 shows one such alternative embodiment in which the movable member 140 is formed by a shape memory alloy (shape memory alloy). In such an embodiment, the movable member 140 is in practice itself a type of actuator that moves the reaction chamber 120 between vertical positions.

The device is configured to form a feed hole into the reaction chamber 120 by moving the reaction chamber 120 downward. Accordingly, in some illustrative embodiments, the reaction chamber 120 is configured to detach from the upper stationary member by moving the reaction chamber 120 downward to open a loading path. In some illustrative embodiments, the top stationary member is a fluid supply member for reaction chamber 120.

The part at the top of the movable reaction chamber (ie, the upper stationary part of the apparatus) can be an open or closed part.

In the embodiment shown in FIG. 1 and 2, a radical delivery tube 160 is shown extending from a radical source (not shown). When the reaction chamber 120 is lowered, the radical feed tube remains stationary. A feed opening is formed between the side wall of the reaction chamber 120 and the radical feed tube 160 (FIG. 1).

In the embodiment shown in FIG. 1 and 2, additionally depicts a supply line 125, which may be a reactive gas supply line or a thermal ALO precursor, for example. A supply line 125 extends from a source (not shown) through an outer chamber passage opening into an intermediate space. It then extends into the outlet of the fixed flange or sleeve 161 at the top of the movable reaction chamber 120 (to allow inactive / precursor gas or liquid to enter the reaction chamber 120 at this location). When the reaction chamber 120 is lowered, the piece 161 remains stationary. Depending on the practical implementation, the device for settling or cleaning may include a plurality of feed lines 125. In other embodiments, for example, in some purification embodiments, they may be absent.

In an alternative embodiment shown in FIG. 4, an example of a closed upper stationary part is shown. This could be, for example, a lid piece 470 optionally containing an expansion volume 475 for downward distribution of the fluid.

The apparatus includes a substrate holder 130 configured to receive one or more substrates 105 loaded through the loading port 115. In some illustrative embodiments, the substrate holder 130 is attached to an outlet line 150. In some other illustrative embodiments, such as shown in FIG. 4, the substrate holder 430 is designed to be embedded or integrated into the top of the reaction chamber lid 470. The substrate holder may be movable within the reaction chamber 120, for example, vertically.

The apparatus disclosed herein also includes a heater 155 within the outer chamber 100 but outside the reaction chamber 120, although in some embodiments the heater may not be present.

In some illustrative embodiments, the device includes an opening for introducing inactive gas into the outer chamber 110 into an intermediate space formed between the walls of the reaction chamber 120 and the outer chamber 110, and an opening for discharging inactive gas from the intermediate space (the intermediate space herein is a volume within outer chamber that surrounds the reaction chamber). FIG. 5 shows one such embodiment. The inactive gas is fed through the outer chamber orifice 581 and is pumped into the outlet line 150 through the orifice 582. The outlet may be located upstream or downstream of the movable part 140. In an alternative embodiment, the outlet is connected to a separate pumping line. In yet another alternative embodiment, the outlet extends into the reaction chamber 120 at the location where the moving reaction chamber 120 touches the upper stationary part. The contact formed between the movable reaction chamber 120 and the stationary part while the reaction chamber 120 is in the deposition or cleaning position may be direct metal contact.

In some exemplary embodiments, the gas flow within the reaction chamber 120 is from top to bottom. The gas or liquid is preferably supplied to the reaction chamber 120 from the upper side of the reaction chamber 120 and is discharged from the lower part of the reaction chamber (below the substrate), for example, through the bottom or the bottom of the reaction chamber 120 into the outlet line 150. At the end of the outlet line 150 there is a vacuum pump (not shown) that pumps out the contents of the internal volume of the reaction chamber 120, creating a vacuum.

In some illustrative embodiments, the reaction chamber 120 forms a rotationally symmetric housing. The reaction chamber 120 may be a cup-shaped piece (having an outlet at the bottom). The outer chamber 110 may be formed by a pressure vessel. The outer chamber 110 may be referred to as a vacuum chamber due to the vacuum conditions created therein. In some illustrative embodiments, both the reaction chamber 120 and the outer chamber 110 are in a vacuum during loading of the substrates (and during processing). The walls of the outer chamber 110 form a boundary. The contents of the volume inside the walls of the vacuum chamber, especially the space inside the reaction chamber 120, is evacuated to form a vacuum using a vacuum pump (not shown), whereby vacuum conditions prevail within the volume bounded by the walls of the vacuum chamber.

In some illustrative embodiments, the pressure in the intermediate space 111 during processing is below atmospheric pressure. In some illustrative embodiments, the pressure in the intermediate space is 0.9 bar or less, preferably 15-5 mbar, while the pressure in the reaction space 112 is preferably 1.5-0.1 mbar. The pressure in the intermediate space 111 is preferably at least twice the pressure in the reaction space 112. In some embodiments, the pressure in the intermediate space 111 is 5-10 times the pressure in the reaction space 112. In some embodiments, for example, when using microwave plasma, the pressure in the reaction space 112 can be 1 Pa, and the pressure in the intermediate space is 4-5 Pa. To obtain high degrees of vacuum, a turbomolecular pump can be used.

With the reaction chamber 120 open (lowered) for discharge, the pressure in the reaction chamber 120 in one embodiment rises to a reading equal to or higher than the pressure in the intermediate space 111 to repel possible particles from the substrate.

In some illustrative embodiments, an alternative movable element is used. The movable member 640 shown in FIG. 6, is implemented using two (or more) folded crosswise or inserted into one another tubes, which are made with the possibility of moving vertically relative to each other. Otherwise, the embodiment contains similar elements and functions in the same way as the embodiments disclosed above.

FIG. 7, an optional security element 791 is shown that is positioned within the outlet line 150 and configured to prevent material from settling on the plunger 140 during processing. The protective element 791 can be made in the form of a tube and extend along the entire length of the movable element 140 and even further. It can be attached to the outlet line 150 or to the edge of the outer chamber 110. Inactive gas, in one embodiment, is fed from the intermediate space 111 into the space formed between the security element 791 and the movable element 140 through the passage opening 582 in close proximity to the blind lower end of the space ... The inactive gas flows upwardly through the resulting confined space up to the point at which the protective element 791. The flow turns downwards there and mixes with the flow of the outlet line. This makes it difficult for reactive gases to penetrate the space between the security element 791 and the movable element 140. In embodiments where there is no substrate holder 130, the substrate (s) can (can) be supported by the upper edge of the security element 791.

In yet another embodiment, there is a second movable element (another tubular element, such as a second bellows) around the open (first) movable element 140. An enclosed space is formed between the two movable elements, and the resulting space is pressurized by means of a gas or liquid necessary for deformations in the movable elements due to changes in the applied pressure, thereby causing the desired vertical movement of the reaction chamber 120. Said second movable element may, for example, be tightly fitted to the outer wall of the reaction chamber 120 at one end and to the outer chamber 110 at the other end. This design works as a pneumatic drive.

In yet another embodiment, the outer chamber 110 is omitted. The reaction chamber 120 forms part of a single chamber reactor. The loading opening is formed by lowering the entire reaction chamber 120.

FIG. 8 depicts a method in accordance with one embodiment of the invention. At step 801, the reaction chamber is lowered. One or more substrates are loaded in step 802. The reaction chamber is raised to the deposition or purification position in step 803 for deposition and / or purification using the selected deposition or purification method in step 804. After processing, the reaction chamber is lowered again in step 805 and one or more substrates are unloaded at block 806. In more generic embodiments, one or more of blocks 802-806 may be omitted. In yet another embodiment, for example, a powder coating embodiment, the powder can be loaded through a separate channel and discharged through the same or a different channel. In such an embodiment, lowering the reaction chamber for loading may not be necessary, but lowering the reaction chamber may only be used for maintenance purposes.

The description regarding any particular preceding embodiment is directly applicable to other disclosed embodiments. This applies to both design and operation of the disclosed device.

Without limiting in any way the scope and interpretation of the claims, some of the technical effects of one or more illustrative embodiments disclosed herein are listed below. One technical effect is to form particles in a substrate treating device, such as a deposition or cleaning device, over the surface of the substrate by placing movable parts of the reaction chamber under the substrate. Another technical effect is to prevent particles from under the substrate from entering the space above the substrate when the flow under the substrate is farther away from the substrate (ie, downward). Another technical effect is to improve the loading method into a substrate treatment reactor, in particular a dual-chamber substrate treatment reactor. Another technical effect is to further increase the differential pressure that can be obtained by using a flexible bellows as the deformable component, compared with the prior art.

It should be noted that some of the functions or method steps disclosed above may be performed in a different order and / or concurrently with each other. In addition, one or more of the above-described functions or method steps may be optional or combined.

In the above description, by way of non-limiting examples of specific practical implementations and embodiments of the invention, the most complete and informative disclosure of the method of carrying out the invention presented to the inventors at the present time is offered. However, one skilled in the art understands that the invention is not limited to the above details of the embodiments, but may be implemented in other embodiments by other equivalent means without departing from the characteristics of the invention.

In addition, some of the features of the above-disclosed embodiments of the present invention can be successfully used without correspondingly applying other features. As such, the above description is to be considered merely as an illustration of the principles of the present invention, but not as a limitation. Thus, the scope of the present invention is limited only by the appended claims.

Claims (25)

1. A device for processing substrates by deposition or cleaning, containing: outdoor camera, a reaction chamber with the possibility of supplying it with a chemically inactive gas or precursor, while the reaction chamber is located inside the outer chamber with the formation of a two-chamber structure, a line for supplying a chemically inactive gas or precursor to the reaction chamber, characterized in that it contains a movable element located under the reaction chamber and configured to provide vertical movement of the reaction chamber between the processing position and the lower position inside the outer chamber, while the lower position is intended for loading at least one substrate into the reaction chamber, the movable element forming part of the outlet line of the device. 2. The device according to claim. 1, characterized in that it is configured to form a feed opening into the reaction chamber by moving the reaction chamber in the downward direction. 3. The device according to claim 1 or 2, characterized in that the reaction chamber is made with the possibility of separating from the upper stationary part when the reaction chamber is moved in the lower direction to form a loading opening into the reaction chamber. 4. Device according to any one of paragraphs. 1-3, comprising a loading port on the side of the outer chamber for loading at least one substrate into the reaction chamber through the side wall of the outer chamber. 5. The device according to claim. 1, characterized in that the movable element is a vacuum bellows. 6. Device according to any one of paragraphs. 1-4, containing a heater inside the outer chamber, but outside the reaction chamber. 7. Device according to any one of paragraphs. 1-4, 6, comprising an opening for feeding a chemically inactive gas into the outer chamber into an intermediate space formed between the walls of the reaction chamber and the outer chamber, and an opening for discharging inactive gas from said intermediate space. 8. Device according to any one of paragraphs. 1-7, characterized in that it is an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device. 9. A method for treating substrates by deposition or cleaning, comprising the following steps: moving the reaction chamber of the deposition or cleaning device to a lower position to load at least one substrate into the reaction chamber, then the reaction chamber is raised to the deposition or cleaning position for treating said at least one substrate by deposition or cleaning with the supply of a reactive gas or precursor to the reaction chamber, after processing, the reaction chamber is again moved to the lower position, and discharging at least one substrate. 10. The method according to claim 9, including the following step: a loading hole is formed into the reaction chamber by moving the reaction chamber in the downward direction. 11. The method according to any one of claims. 9 or 10, including the following step: detach the reaction chamber from the upper stationary part while moving the reaction chamber in the downward direction. 12. The method according to any one of claims. 9-11, which includes the following stage: load at least one substrate into the reaction chamber through the side wall of the outer chamber surrounding the reaction chamber. 13. The method according to any one of claims. 9-12, in which the above-mentioned movement in the lower direction and the raising of the reaction chamber is carried out using a gas-tight elastic element in the form of a vacuum bellows. 14. The method according to any one of claims. 9-13, comprising providing an intermediate space formed between the walls of the reaction chamber and the outer chamber at a higher pressure than the pressure inside the reaction chamber. 15. The method according to any one of claims. 9-14, which is used for atomic layer deposition (ALD) on at least one substrate within the reaction chamber.

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