RU2589304C1 - Method for amplitude-phase modulation of high-frequency signal and device for its implementation - Google Patents

Abstract

FIELD: radio engineering, communication.

SUBSTANCE: method for amplitude-phase modulation of a high-frequency signal consists in the fact that a signal is supplied to a modulator made of a four-pole circuit, a controlled two-electrode non-linear element, a source of a control low-frequency signal and a load; amplitude and phase of the signal is changed by changing the amplitude of the control low-frequency signal on the non-linear element; the non-linear element is connected to a longitudinal circuit between the high-frequency signal source and the four-pole circuit input, to the output of which the load is connected. The specified relationships of the ratio of modulus and phase of transfer function of the modulator are provided due to selection of dependence of an element of a resistance matrix of the complex four-pole circuit on frequency.

EFFECT: providing modulation of amplitude and phase of a high-frequency signal at the specified dependences of the ratio of moduli and difference of phases of transfer function of the modulator in two states of the controlled non-linear element, which are determined with two levels of a control low-frequency signal, on frequency in the specified frequency band due to optimisation of the scheme and values of parameters of the complex four-pole circuit.

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Description

The invention relates to the field of radio communications and radar and can be used for amplitude, phase and amplitude-phase modulation or manipulation of high-frequency signals.

A known method of manipulation (modulation) of the parameters of the reflected signal, consisting in the fact that the input impedance of the manipulation device is changed so that the reflection coefficient of this device changes the phase by π, π / 2, π / 4, and a circulator is used to separate the input and reflected signals [Radio transmitting devices. / Edited by O.A. Chelnokova - M .: Radio and communications, 1982, p. 152-156]. A device for implementing this method is known [ibid.], Consisting of a circulator, the first input of which is connected to a signal source, the third input is connected to a load, and the second is connected to a piece of an open transmission line of length λ / 4, at the beginning of which a p-i-n diode is turned on.

If the diode is closed, then reflection occurs from the cross section in which it is turned on, the reflected wave enters the load with a resistance of 50 Ohms. If the diode is open, then reflection occurs from the end of the line. The phase of the reflected signal in one state of the diode differs from the phase of the reflected signal in another state of the diode by π radians. If necessary, change the phase difference, the length of the length of the transmission line is changed accordingly.

The disadvantage of this method and device for its implementation is that in the two states of the diode only the phase of the reflected signal changes, and the specified values of the phase difference of the reflected signal in the two states of the diode is provided only at one fixed frequency. Another disadvantage is the constancy of the amplitude of the reflected signal in two states of the diode, that is, the absence of amplitude manipulation, which narrows the functionality. For example, this does not allow providing two radio communication channels on the same carrier frequency (one channel can be formed by amplitude manipulation, and the other by phase manipulation or it is not possible to encode the transmitted information). The third disadvantage should be considered large masses and dimensions associated with the need to use segments of the transmission line. Another important disadvantage is that this method and this device do not provide manipulation (modulation) of the amplitude and phase of the transmitted signal. The main disadvantage is the inability to provide manipulation (modulation) of the amplitude and phase of the transmitted signal in a given frequency band at arbitrary frequency characteristics of the load.

A known method of manipulating the phase of the reflected signal, based on the use of two-impedance microwave devices [V.G. Sokolinsky, V.G. Scheinkman. Frequency and phase modulators and manipulators. - M.: Radio and Communications, 1983, pp. 146-158]. A device for implementing this method is known [ibid.], Consisting of a certain number of reactive elements of type L, C parameters of which are selected from the condition of providing the required arbitrary phase difference of the reflection coefficient.

Compared with the previous method and device, this method and device for its implementation do not require the use of semiconductor diodes only in open and only closed states. For any diode states determined by two levels of low-frequency control action, for certain values of parameters of type L, C, a predetermined value of the phase difference of the reflected signal at a fixed frequency can be provided. If the amplitude of the control low-frequency signal between these two levels changes continuously, then modulation is ensured.

The main disadvantage (as in the first method and device) is the inability to simultaneously provide manipulation (modulation) of the amplitude and phase of the transmitted signal in a given frequency band for arbitrary frequency characteristics of the load.

The closest in technical essence and the achieved result (prototype) is the method [A. Golovkov A device for modulating the reflected signal. Auth. certificate No. 1800579 dated October 9, 1992], consisting in the fact that the uncontrolled part (matching filtering device) is formed from two-terminal devices connected in a certain way, the resistance of each two-terminal device is selected from the condition of ensuring the same predetermined two-level law of change in the amplitude and phase of the reflected signal when a controlled element changes from one state to another under the influence of a control low-frequency voltage or current.

A device (prototype) is known for implementing the method [ibid.], Comprising a circulator, the first and third arms of which are a microwave input and output, and a reactive four-terminal and a semiconductor diode connected to a low-frequency control source are included in the second shoulder, while the four-terminal is made in in the form of a T-shaped connection of two-terminal devices with reactance values selected from the conditions for ensuring the required laws of two-level changes in the amplitude and phase of the reflected signal in two given frequencies. Also, as in the previous implementation method and apparatus, phase and amplitude modulation is possible if the control signal changes continuously.

The main disadvantage (as in the previous methods and devices) is the lack of the ability to simultaneously provide manipulation (modulation) of the amplitude and phase of the transmitted signal in a given frequency band according to a given law for arbitrary frequency characteristics of the load. The next important drawback of all the above methods and devices is that all elements of the four-terminal devices are made reactive, which is associated with the desire of the developers not to introduce additional losses by using complex two-terminal devices based on both reactive and resistive elements. When using only reactive or only resistive elements in matching devices, it is not always possible to provide matching conditions for the criterion of ensuring the required module ratio and the required phase difference of the transmission coefficients in two states of a controlled nonlinear element defined by two levels of a low-frequency control signal, since they have certain physical realizability areas (the area of change of the real and imaginary components of the resistance of the signal source and load), within the framework of which these coordination conditions are realized (A. Golovkov. Complex electronic devices. M: Radio and communications, 1996. - 128 p.).

The technical result of the invention is the expansion of areas of physical feasibility as areas of change of the real and imaginary components of the resistance of the signal source and load, within which the modulation of the amplitude and phase of the high-frequency signal is provided for given dependencies of the ratio of the modules and the phase difference of the transfer function of the modulator in two states of the controlled non-linear element, defined by two levels of the control low-frequency signal, from the frequency in a given band frequencies by optimizing the circuit and the integrated parameter values quadripole. The possibility of changing the option of including a nonlinear element relative to the matching complex quadrupole further expands the field of physical feasibility.

1. The specified result is achieved by the fact that in the known method of amplitude-phase modulation of a high-frequency signal, consisting in the fact that the high-frequency signal is fed to a modulator made of a four-terminal device, a controlled two-electrode nonlinear element, a source of a control low-frequency signal and load, the amplitude and phase of the high-frequency signal change by changing the amplitude of the control low-frequency signal on a nonlinear element, in addition, the four-terminal network is made complex of reactive and resistive elements, a nonlinear element is included in the longitudinal circuit between the high-frequency signal source and the four-terminal input, to the output of which the load is connected, the given dependences of the ratio of the modules and the phase difference of the transfer function of the modulator in two states, determined by two levels of the control low-frequency signal, on the frequency and the given dependencies of the module and phase of the transfer function of the modulator from the amplitude of the control low-frequency signal, continuously varying from one control level A low-frequency signal to another, in a given frequency band, is provided by selecting the dependence of the element z _{11 of} the resistance matrix of the complex four-terminal network on the frequency using the following mathematical expression:

,

,

; z₁₁, z₂₁ - заданные зависимости соответствующих элементов матрицы сопротивлений комплексного четырехполюсника от частоты; m₂₁, φ₂₁ - заданные зависимости отношения модулей и разности фаз передаточной функции в двух состояниях управляемого нелинейного элемента, определяемых двумя уровнями управляющего низкочастотного сигнала, от частоты в заданной полосе частот; z_1,2 - заданные зависимости комплексного сопротивления двухполюсного нелинейного элемента в двух состояниях, определяемых двумя уровнями управляющего низкочастотного сигнала, от частоты в заданной полосе частот; z₀, z_n - заданные зависимости комплексных сопротивлений источника высокочастотного сигнала и нагрузки от частоты.Where

; z ₁₁ , z ₂₁ are the given dependences of the corresponding elements of the resistance matrix of the complex four-terminal network on frequency; m ₂₁ , φ ₂₁ are the given dependences of the ratio of the modules and the phase difference of the transfer function in two states of the controlled nonlinear element, determined by two levels of the control low-frequency signal, on the frequency in a given frequency band; z _1,2 - given dependences of the complex resistance of a bipolar nonlinear element in two states, determined by two levels of the control low-frequency signal, on the frequency in a given frequency band; z ₀ , z _n are the given dependences of the complex resistances of the high-frequency signal source and load on frequency.

2. The specified result is achieved by the fact that in the known device for amplitude-phase modulation of a high-frequency signal, consisting of a source of a high-frequency signal, a four-terminal, a two-electrode nonlinear element, a source of a control low-frequency signal and a load, an additional four-terminal is made complex in the form of a T-shaped connection of three complex two-terminal , a nonlinear element is included in the longitudinal circuit between the high-frequency signal source and the input of the complex four-terminal network, to the output a load is connected to the complex four-terminal, the second T-shaped two-terminal is formed from the first resistive two-terminal with resistance R ₁ connected in series, the first inductance coil L ₁ and the second resistive two-terminal connected with resistance R ₂ and the second coil with inductance L ₂ connected in parallel the values of the parameters of the second two-terminal T-shaped connection are determined in accordance with the following mathematical expressions:

;

;

;

;

;

;

,

,

- оптимальные значения комплексного сопротивления второго комплексного двухполюсника Т-образного соединения на двух частотах;

; Z_1n, Z_3n - заданные значения комплексного сопротивления первого и третьего комплексных двухполюсников Т-образного соединения на двух частотах; m_21n, φ_21n - заданные значения отношений модулей и разностей фаз передаточной функции в двух состояниях управляемого нелинейного элемента, определяемых двумя уровнями управляющего низкочастотного сигнала, на двух частотах; z_1n, _2n - заданные значения комплексного сопротивления двухполюсного нелинейного элемента в двух состояниях, определяемых двумя уровнями управляющего низкочастотного сигнала, на двух частотах; z_0n, z_nn - заданные значения комплексных сопротивлений источника высокочастотного сигнала и нагрузки на двух частотах; ω_1,2=2π/f_1,2; n=1,2 - номера заданных двух частот f_1,2.where r ₁ , r ₂ , x ₁ , x ₂ are the optimal values of the real and imaginary components of the resistance of the second complex two-terminal complex four-terminal at two frequencies;

- the optimal values of the complex resistance of the second complex two-terminal T-shaped connection at two frequencies;

; Z _1n , Z _3n - set values of the complex resistance of the first and third complex two-terminal T-shaped connection at two frequencies; m _21n , φ _21n are the given values of the ratios of the modules and the phase differences of the transfer function in two states of the controlled non-linear element, determined by two levels of the control low-frequency signal, at two frequencies; z _1n , _2n - set values of the complex resistance of a bipolar nonlinear element in two states, defined by two levels of the control low-frequency signal, at two frequencies; z _0n , z _nn are the set values of the complex resistances of the source of the high-frequency signal and the load at two frequencies; ω _1,2 = 2π / f _1,2 ; n = 1,2 - numbers of the given two frequencies f _1,2 .

In FIG. 1 shows a diagram of a device for modulating the amplitude and phase of high-frequency signals (prototype) that implements the prototype method.

In FIG. 2 shows a structural diagram of the proposed device according to claim 2, which implements the proposed method according to claim 1.

In FIG. 3 shows a diagram of a complex quadrupole of the proposed device according to p. 2.

In FIG. 4 shows a diagram of the second integrated two-terminal network, which is part of the integrated four-terminal network of the proposed device according to p. 2.

The prototype device contains a circulator 1 with input 2, load 3 and output 4 shoulders, a four-terminal from three two-terminal with reactance x _1k - 5, x _2k - 6, x _3k - 7, interconnected by a T-circuit, as well as a semiconductor a diode 8 connected in parallel to the source of the modulation signal 9. The two-terminal 7 is connected to the diode 8, the two-terminal 5 is connected to the load arm 3 of the circulator 1.

The principle of operation of a device for manipulating and modulating signal parameters (prototype) is as follows.

The high-frequency signal from the source (not shown in Fig. 1) through the input arm 2 of the circulator 1 enters the load arm (the load is not shown) 3. As a result of the interaction of the received signal with the reactive elements and the diode and due to the special choice of the values of the reactive elements of the two-terminal devices, the phase and the amplitudes of the reflected signals at two frequencies is such that, as a result of their interference, signals are output to the output arm 4 of the circulator 1, the amplitude and phase of which are in the same state of diode 8, determined by one m extreme value of the modulation signal source 9 are different from the amplitude and phase of these signals in a different state of the diode 8 at the specified values at the respective two frequencies. The maximum phase deviation can be 360 °, the minimum is zero, and the maximum amplitude ratio is ∞. The ratios of the modules and the phase difference of the reflection coefficient are realized at the same frequencies at both frequencies.

The main disadvantages of this method and device are described above.

The structural diagram of the proposed device according to claim 2 (Fig. 2) consists of a two-electrode nonlinear element - 8 with resistances z _1.2 , in two states of the control low-frequency signal, the source of the control low-frequency signal 9, the source of the high-frequency signal with complex resistance z ₀ 10, complex quadripole (CN) 11 and the load impedance with complex 12. complex z _n quadripole formed as a T-fitting three integrated two-terminal (FIG. 3) with resistances Ζ _1,2,3 13, 14, 15. The frequency of dependence matrix element resistances z ₂₂ CN 11 and the resistance of the second two-terminal integrated Ζ _{February 14} are selected from the conditions for achieving the technical result, a resistance of the first and third complex Ζ _1,3-ports 13, 15 may be selected arbitrarily or from any physical considerations.

The signal source, a nonlinear element in the longitudinal circuit, the inverter, and the load are included in a cascade scheme in the order listed. The frequency dependences of the element of the matrix of resistances z ₁₁ KCH 11 and the resistance of the second complex two-terminal Z ₂ 14 are selected from the conditions for ensuring the given dependences of the ratio of the modules and the phase difference of the transfer function of the modulator in two states, determined by two levels of the control low-frequency signal, on the frequency and the given dependences of the module and phase the transfer function of the modulator from the amplitude of the control low-frequency signal, continuously varying from one level of the control low-frequency s Nala to another (in this case the levels are selected from the conditions of realization of a quasi-linear portion of the modulation characteristic) in a predetermined frequency band. This dependence was realized by the second complex two-terminal 14 of the complex four-terminal 11 in the form of series-connected first resistive two-terminal with resistance R ₁ 16, the first coil with inductance L ₁ 17 and parallel to each other the second resistive two-terminal with resistance R ₂ 17 and the second coil with inductance L ₂ 18 (Fig. 4), the parameter values of which are selected from the indicated conditions using specific mathematical expressions.

The principle of operation of this device is that when a carrier high-frequency signal is supplied from a source 10 with resistance z ₀ as a result of a special choice of the values of the elements of the second complex two-terminal 14 of the complex four-terminal 11, the given dependences of the ratio of the modules and the phase difference of the transfer function of the modulator in two states will be realized, defined by two levels of the control low-frequency signal, on frequency and given dependences of the module and phase of the transfer function of the modulator on amplitudes rows baseband control signal continuously varies from one level of the baseband signal manager to another in a given frequency band. As a result, the formation properties of discrete or analog high-frequency signals amplitude and phase modulated in amplitude and phase arise with increased areas of physical feasibility as areas of change in the real and imaginary components of the signal source and load resistances, within which the amplitude and phase of the high-frequency signal are simultaneously modulated for given dependencies of the ratio of modules and phase difference of the transfer function of the modulator in two states of a controlled nonlinear element, consumed by two levels of the control low-frequency signal, from the frequency in a given frequency band.

Let us prove the feasibility of implementing these properties.

Let the dependences of the real components of the complex load resistances z _n and the source of the high-frequency signal z ₀ on frequency be known. The dependence of the complex resistances of a bipolar controlled nonlinear element z _1,2 in two states, determined by two levels of the amplitude of the low-frequency signal, on the frequency is also known. Hereinafter, the argument (frequency) is omitted for simplicity. Thus, a nonlinear element is characterized by a transfer matrix:

The complex four-terminal network (CC) is described by the transfer matrix:

; z₁₁, z₂₁, z₂₂ - определитель и элементы матрицы сопротивлений СФУ с учетом условия взаимности z₁₂=-z₂₁ [Фельдштейн А.Л., Явич Л.Р. Синтез четырехполюсников и восьмиполюсников на СВЧ. М.: Связь, 1965. 40 с].Where

; z ₁₁ , z ₂₁ , z ₂₂ - determinant and elements of the matrix of resistances of SFU taking into account the reciprocity condition z ₁₂ = -z ₂₁ [Feldstein A.L., Yavich L.R. Microwave four-terminal and eight-terminal synthesis. M.: Communication, 1965. 40 s].

The general normalized classical transfer matrix of the manipulator (modulator) is obtained by multiplying the matrices (1) and (2) taking into account the normalization conditions:

Using the well-known relationship between the elements of the scattering matrix and the elements of the transfer matrix and (3), we obtain the expression for the transfer coefficient of the manipulator in two states of the diode:

Let it be required to determine the complex four-terminal circuit and the values of the complex resistances of the two-terminal circuits included in it, at which it is possible to provide the given dependences of the ratio of the modules m ₂₁ and the phase difference φ _{21 of} the transmission coefficients in two states of the diode on the frequency:

After substituting (4) in (5), we obtain a complex equation, the solution of which has the form of a relationship between the elements of the desired resistance matrix of the SFU, which is optimal according to the criterion for ensuring a given law for changing the parameters of the transmitted signal (5) in the entire frequency range:

Where

The obtained relationship (6) between the elements of the transmission matrix of a complex four-terminal network means that two-level manipulators of the amplitude and (or) phase of the transmitted signal must contain at least one independent two-terminal device with complex resistance, the value of which must satisfy the equation generated on the basis of this relationship. In order to find the optimal values of the parameters of the complex four-terminal network, it is necessary to select some circuit from M≥1 two-terminal network with complex resistance, find its resistance matrix, the elements of which are expressed through the parameters of the complex four-terminal scheme, and substitute them in (6). The equation thus formed must be solved with respect to the resistance of the selected complex bipolar. The values of the parameters of the remaining M-1 complex two-terminal networks can be set arbitrarily or selected from any other physical considerations. In accordance with the described algorithm, the frequency dependence of the resistance of the second complex two-terminal T-shaped connection of three complex two-terminal (Fig. 3) on frequency is optimal according to criterion (5):

where n = 1, 2 ... are the numbers of the interpolation frequencies. Resistances Z _{1n, 3n} can be chosen arbitrarily or on the basis of any other physical considerations. The index n must also be introduced in other notation of physical quantities that explicitly depend on the frequency. Given the frequency response (7) of the second complex two-terminal T-connection, the given dependences of the ratio of the moduli m ₂₁ and the phase difference φ _{21 of} the transmission coefficients in the two states of the diode on the frequency over the entire frequency spectrum would be provided. However, the implementation of (7) in a continuous, even very narrow frequency band, is not possible.

To implement the optimal approximation (7) on a finite number of frequencies by interpolation, it is necessary to form a two-terminal network with a resistance of Z _2n from at least 2N (N is the number of interpolation frequencies) of elements of type R, L, C, find expressions for their resistances, equate their optimal values resistances of a two-terminal network at given frequencies, determined by formulas (7), and solve the system of 2N equations formed in this way with respect to 2N selected parameters R, L, C. The values of the parameters of the remaining elements can be chosen arbitrarily or based on any other physical considerations, such as the condition of physical realizability. Let the second KP bipolar with resistance Z _{2n be} formed from the first resistive bipolar with resistance R ₁ connected in series, the first inductor with L ₁ and the second resistive bipolar with resistance R ₂ and the second coil with inductance L ₂ connected in parallel (Fig. 4) . The complex resistance of the second two-terminal KCH:

We divide the real and imaginary parts in (8) and for N = 2 we compose a system of four equations:

;

;

;

;

Decision:

;

;

;

;

;

;

r ₁ , r ₂ , x ₁ , x ₂ are the optimal values of the real and imaginary components of the resistance of the second complex two-terminal complex four-terminal at two frequencies.

The implementation of the optimal approximations of the frequency characteristics of the CN (6) using the T-shaped connection of three complex two-terminal devices and the frequency characteristics of the second complex two-terminal network (7) of this connection using (8), (10) provides an increase in the frequency band within which, with certain deviations, the given dependences of the ratio of the modules m ₂₁ and the phase difference φ _{21 of} the transmission coefficients in the two states of the diode on the frequency (5). This allows, with a reasonable choice of the positions of the given frequencies ω ₁ , ω ₂ relative to each other, to expand the frequency band within which the given dependences of the ratio of the modules and the phase difference of the transfer function of the modulator in two states, determined by the two levels of the control low-frequency signal, on the frequency and the given dependencies are provided modulus and phase of the transfer function of the modulator from the amplitude of the control low-frequency signal, continuously varying from one level of the control low-frequency signal Filed to another, in a given frequency band. With a reasonable choice of both levels of the amplitude of the control signal, quasilinear sections of the phase and amplitude modulation characteristics will be formed for the implementation of the modulation mode. Variable use of both levels provides a manipulation mode. The frequency characteristics of the resistance of the signal source and the load can be set by any.

The proposed technical solutions are new, since the method and device for amplitude-phase modulation, which provide the given dependences of the ratio of the modules and the phase difference of the transfer function of the modulator in two states determined by two levels of the control low-frequency signal, on the frequency and the given dependences of the module and phase of the transfer, are unknown from publicly available information. the modulator function of the amplitude of the control low-frequency signal, continuously varying from one level of the control low astotnogo signal to another (in this case the levels are selected from the conditions of implementation of a quasi-linear portion of the modulation characteristic) in a predetermined frequency band due to the particular choice of the frequency dependence of the element z ₂₂ matrix resistances integrated quadrupole realizable implementation of the quadrupole in a T-fitting three complex two-poles, the formation of the second complex two-terminal T-connection from the series-connected first resistive two-terminal with resistance leniem R _1, with the first coil and the inductance L ₁ connected in parallel between a second two-terminal resistive with a resistance R ₂ and a second coil with inductance L ₂ and selecting said parameters relevant to mathematical expressions.

The proposed technical solutions have an inventive step, since it does not explicitly follow from the published scientific data and the known technical solutions that the claimed sequence of operations (the execution of a four-terminal complex in the form of the above scheme, the inclusion of a two-pole nonlinear element between the four-terminal and the load in the longitudinal circuit, the implementation of the optimal frequency dependences of element z _{11 of} the resistance matrix of a complex four-terminal network by performing this four-terminal network in the form of T -shaped connection of three complex two-terminal, the formation of the second complex two-terminal T-shaped connection from a series of connected first resistive two-terminal with resistance R ₁ , the first coil with inductance L ₁ and parallel to each other, the second resistive two-terminal with resistance R ₂ and the second coil with inductance L ₂ and the choice of the indicated parameters according to the corresponding mathematical expressions) provide the given dependences of the ratio of the modules and the phase difference of the transfer function of the modulator in two states, determined by two levels of the control low-frequency signal, on the frequency and the given dependences of the module and phase of the transfer function of the modulator on the amplitude of the control low-frequency signal, continuously changing from one level of the control low-frequency signal to another.

The proposed technical solutions are practically applicable, since semiconductor diodes (parametric diodes, pin diodes, power supply diodes, tunnel diodes, Gunn diodes, etc.), inductances and capacitances formed in the claimed modulation device circuit can be used for their implementation . The frequency characteristics of the RF and the second complex two-terminal T-connection, the values of the resistances of the resistive elements and inductances can be determined using mathematical expressions given in the claims.

The technical and economic efficiency of the proposed method and device consists in simultaneously providing predetermined dependencies of the ratio of the modules and the phase difference of the transfer function of the modulator in two states, determined by two levels of the control low-frequency signal, on the frequency and the given dependences of the module and phase of the transfer function of the modulator on the amplitude of the control low-frequency signal, continuously varying from one level of the control low-frequency signal to another, which contributes to framing of modulated or manipulated in amplitude and (or) phase high-frequency signals in a larger frequency band with increased areas of physical feasibility as areas of change of the real and imaginary components of the resistance of the signal source and load.

Claims (2)

1. The method of amplitude-phase modulation of a high-frequency signal, consisting in the fact that the high-frequency signal is fed to a modulator made of a four-terminal device, a controlled two-electrode nonlinear element, a source of a control low-frequency signal and load, the amplitude and phase of the high-frequency signal is changed by changing the amplitude of the control low-frequency signal to non-linear element, characterized in that the four-terminal device is made complex of reactive and resistive elements, the non-linear element includes In the longitudinal circuit between the source of the high-frequency signal and the input of the four-terminal, the output of which the load is connected, the given dependences of the ratio of the modules and the phase difference of the transfer function of the modulator in two states, determined by the two levels of the control low-frequency signal, on the frequency and the given dependences of the module and phase of the transfer function of the modulator from the amplitude of the control low-frequency signal, continuously varying from one level of the control low-frequency signal to another, in the given frequency band is provided by choosing the dependence of the element z _{11 of} the resistance matrix of the complex quadripole on frequency using the following mathematical expression:

,
Where

; z ₁₁ , z ₂₁ are the given dependences of the corresponding elements of the resistance matrix of the complex four-terminal network on frequency; m ₂₁ , φ ₂₁ are the given dependences of the ratio of the modules and the phase difference of the transfer function in two states of the controlled nonlinear element, determined by two levels of the control low-frequency signal, on the frequency in a given frequency band; z _1,2 - given dependences of the complex resistance of a bipolar nonlinear element in two states, determined by two levels of the control low-frequency signal, on the frequency in a given frequency band; z ₀ , z _n are the given dependences of the complex resistances of the high-frequency signal source and load on frequency. 2. The device for amplitude-phase modulation of a high-frequency signal, consisting of a high-frequency signal source, a four-terminal, a two-electrode nonlinear element, a source of a control low-frequency signal and a load, characterized in that the four-terminal is made complex in the form of a T-shaped connection of three complex two-terminal, non-linear element is included in a longitudinal circuit between the source of the high-frequency signal and the input of the complex four-terminal, connected to the output of the complex four-terminal load, the second two-terminal T-shaped connection is formed from a series-connected first resistive two-terminal with a resistance R ₁ , a first coil with inductance L ₁ and parallel to each other a second resistive two-terminal with a resistance R ₂ and a second coil with inductance L ₂ , the values of the parameters of the second two-terminal T-joints are defined in accordance with the following mathematical expressions:

;

;

;
where r ₁ , r ₂ , x ₁ , x ₂ are the optimal values of the real and imaginary components of the resistance of the second complex two-terminal complex four-terminal at two frequencies;

- the optimal values of the complex resistance of the second complex two-terminal T-shaped connection at two frequencies;

; Z _1n , Z _3n - set values of the complex resistance of the first and third complex two-terminal T-shaped connection at two frequencies; m _21n , φ _21n are the given values of the ratios of the modules and the phase differences of the transfer function in two states of the controlled non-linear element, determined by two levels of the control low-frequency signal, at two frequencies; z _1n , _2n - set values of the complex resistance of a bipolar nonlinear element in two states, defined by two levels of the control low-frequency signal, at two frequencies; z _0n , z _nn are the set values of the complex resistances of the source of the high-frequency signal and the load at two frequencies; ω _1,2 = 2πf _1,2 ; n = 1,2 - numbers of the given two frequencies f _1,2 .

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