RU2465703C1 - Switching devices with transformer galvanic isolation of control circuits - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: device comprises the first input circuit, the first switching element comprising the first and second field transistors, the first circuit of overload protection made of the first diode and the third field transistor, also the second and third input circuits are introduced, from the first to the third transformer, from the second to the sixth diodes, from the fourth to the sixth field transistors, from the first to the third capacitors, from the first to the sixth resistors and from the first to the third generators.

EFFECT: improved reliability and reduced consumption in control circuits.

7 dwg

Description

The invention relates to the field of computer technology, in particular to interface devices of electronic equipment that implements control functions of actuating elements.

A solid-state relay containing an optocoupler, a switching element consisting of the first and second field-effect transistors, a speed increasing unit, consisting of a resistor and a third field-effect transistor, the gate of which is connected to the first contact of the resistor and to the first input of the speed increasing unit, is known, the source of the third field-effect transistor is connected with the second contact of the resistor and with the first output of the speed increasing unit, the drain of the third field-effect transistor is connected to the second output of the speed increasing unit, and the resistor, the first contact it is connected to the second output of the speed increasing unit, the first output of which is connected to the first input of the switching element, the second input of which is connected to the second contact of the resistor and the first output of the optocoupler, the second output of which is connected to the first input of the speed increasing unit, the first and second inputs of the optocoupler are the first and second inputs of a solid-state relay, the first and second outputs of which are the first and second outputs of the switching element [1].

The disadvantage of this device is its low reliability and significant consumption in control circuits.

The closest in technical essence to the invention is a solid-state relay containing an input circuit, an optocoupler, a switching element, consisting of the first and second field-effect transistors, an overload protection circuit, consisting of the first and second diodes, and an absorption filter, the first contact of which is connected to the first the output of the overload protection circuit and with the first output of the switching element, the second output of which is connected to the second contact of the absorbing filter and the second output of the overload protection circuit, the input of which is connected n with the first contacts of the optocoupler and the first resistor and with the first input of the switching element, the second input of which is connected to the second contact of the optocoupler, the third and fourth contacts of which are connected to the first and second outputs of the input circuit, the first and second inputs of which are the first and second inputs of the solid state relay , the first and second outputs of which are connected to the first and second contacts of the absorbing filter [2].

The disadvantage of this device is its low reliability and significant consumption in control circuits.

The objective of the invention is to increase reliability and reduce consumption in control circuits.

The essence of the claimed invention, the possibility of its implementation and industrial use are illustrated by the drawings presented in figures 1-7, where:

- figure 1 presents the functional diagram of switching devices with transformer galvanic isolation of control circuits (hereinafter referred to as switching devices);

- figure 2 presents the backup circuit output control commands (KU);

- figure 3 presents a timing diagram of the operation of switching devices;

- figure 4 presents the truth table of switching devices;

- figure 5 presents the microassembly with a cover;

- Fig.6 presents a microassembly with a cover in section;

- Fig.7 shows a structural diagram of a microassembly with a cover.

The indicated advantages of the claimed switching devices over the prototype are achieved due to the fact that in switching devices containing the first 1 input circuit, the first 2 switching element, consisting of the first 3 and second 4 field-effect transistors, the first 5 overload protection circuit, consisting of the first 6 diode and the third 7 field-effect transistor, in order to increase reliability and reduce consumption in the control circuits, a second 8 input circuit, a third 9 input circuit, the first 10 transformer, and the second 11 transformer are additionally introduced , third 12 transformer, second 13, third 14, fourth 15, fifth 16, sixth 17 diodes, fourth 18, fifth 19, sixth 20 field-effect transistors, first 21, second 22, third 23 capacitors, first 24, second 25, third 26 , fourth 27, fifth 28, sixth 29 resistors, first 30, second 31 and third 32 generators, outputs 33, 34, 35 of which are connected to the first inputs of the first 1, second 8 and third 9 input circuits, respectively, the first outputs 36, 37, 38 which are connected to the first contacts of the first 21, second 22 and third 23 capacitors, the second contacts of which are connected to the first ontacts of the primary windings of the first 10, second 11 and third 12 transformers, the second contacts of which are connected to the second outputs 39, 40, 41 of the first 1, second 8 and third 9 input circuits, the second inputs of which are connected to the first 42, second 43 and third 44 inputs switching devices, the fourth 45, fifth 46 and sixth 47 inputs of which are connected to the first inputs of the first 30, second 31, third 32 generators and the third inputs of the first 1, second 8 and third 9 input circuits, the first 48 contact of the first secondary winding of the first 10 transformer with is single with the first contact of the sixth 17 diode, the second contact of which is connected to the gate of the sixth 20 field-effect transistor and with the first contact of the sixth 29 resistor, the second contact of which is connected to the drains of the fourth 18 and sixth 20 field-effect transistors, with the source of the fifth 19 field-effect transistor, with the second contact the third 26 resistors, with second 49, 50 contacts of the second and first secondary windings of the second 11 and first 10 transformers, the first 51 contact of the second secondary winding of the second 11 transformer is connected to the first contact of the fourth 15 diodes, the second contact of which is connected to the first contact of the third 26 resistor, with the gate of the fourth 18 field-effect transistor, the first 52 contact of the second secondary winding of the first 10 transformer is connected to the first contact of the third 14 diode, the second contact of which is connected to the first contact of the second 25 resistor, with the gate of the second 4 field-effect transistor, the source of which is connected to the drains of the first 3 and third 7 field-effect transistors, with the second contacts of the first 24 and fifth 28 resistors, with the second 53, 54 contacts of the first secondary winding of the second transformer 11 and the second secondary winding of the third 12 transformer, the first 55 contact of which is connected to the first contact of the first 6 diode, the second contact of which is connected to the first contact of the fifth 28 resistor and to the gate of the third 7 field-effect transistor, the source of which is connected to the source of the first 3 field-effect transistor and is the first 56 output of switching devices, the second 57 output of which is connected to the drain of the second 4 field-effect transistor, with the second contacts of the second 25 resistor and the second 58 secondary winding of the first 10 tra a transformer, the first 59 contact of the first secondary winding of the second 11 transformer connected to the first contact of the second 13 diode, the second contact of which is connected to the first contact of the first 24 resistor and the gate of the first 3 field-effect transistor, the third 60 output of the switching devices connected to the sources of the fourth 18 and sixth 20 field-effect transistors, the fourth 61 output of switching devices is connected to the drain of the fifth 19 field-effect transistor, with the second contacts of the fourth 27 resistor and the first 62 secondary winding of the third 12 t an encoder, the first 63 contact of which is connected to the first contact of the fifth 16 diode, the second contact of which is connected to the first contact of the fourth 27 resistor, the gate of the fifth 19 field-effect transistor, and the seventh 64, eighth 65, ninth 66 inputs of the switching devices are connected to the second inputs of the first 30, second 31 and third 32 generators, switching devices are placed in a microassembly with a cover 67, made in the form of digital crystals and transformers, resistors and capacitors, the findings of the "power" and "common" which are connected to the corresponding separate layers of the microassembly, and the wiring of the switching devices is made in two other layers.

Switching devices work as follows.

The use of power switches in the interface devices of electronic equipment (REA), which implements control functions for executive elements, increases the heat generation in power switches and requires the implementation of effective heat removal, as well as switching noise, which forces measures to protect low-current REA circuits that implement logical control functions.

Functional diagram of switching devices with transformer galvanic isolation of control circuits is presented in figure 1.

Ensuring efficient heat dissipation can be solved by choosing switching element 2 (first 3 and second 4 field effect transistors) with low resistance in the open state, which allows to reduce heat generation and heat removal costs. This requirement is satisfied by powerful MOS transistors of special purpose 2P7132-5 [3]. Providing effective protection against interference is reduced to the introduction into the control circuit of switching elements of circuits with galvanic isolation of the control circuits of the power switch and its output, energy losses in such a circuit can be minimized.

An increase in the reliability of switching devices is achieved due to redundancy of the switchgear. The issuance of redundant KU when applying to the input of switching devices information from three channels is performed in accordance with the scheme presented in figure 2. An inverse signal is formed on the main output when logical units are present in channel B or C and A. An inverse signal is formed on the backup output when logical units are present in channel A or B and C. A timing diagram of the operation of switching devices is presented in figure 3.

Each channel for operation is clocked from its own generator (30, 31, 32). When applying to the channel inputs (42, 43, 44), the commands on the input circuits (1, 8, 9) are filled with frequency from their generators (30, 31, 32) and amplified, then the commands in the form of pulses are sent to the primary windings (36, 39; 37, 40; 38, 41) transformers (10, 11, 12) (transformer isolation). From the secondary winding, these same commands are sent through the second 13 and third 14 diodes to the input of the switching element 2, where, due to the input capacitance, a signal is generated that completely repeats the shape and duration of the input signal. The switching element 2 opens, connecting the active load.

Work with all combinations of input commands is completely determined by the truth table of the switching devices presented in figure 4.

Solving the problems of switching devices leads to additional hardware costs, which are solved by placing crystals of microcircuits and transformers and other electronic components in the microassembly with a cover, shown in Fig.5 and Fig.6.

The structural diagram of the microassembly with a cover is shown in Fig.7. The microassembly houses six switching devices. Placing switching devices on a microassembly with a cover allows to increase reliability and improve weight and size characteristics.

Information sources

1. USA patent No. 5131877, class. 250/551, 307/311, class G02B 27/00, 1992

2. USA patent No. 7023681 B2, cl 361/118, 361 / 93.1, cl. Н02Н 9/00 (prototype).

3. The chip 2P7132-5 AEYAR.432140.542TU.

Claims (1)

Switching devices with transformer galvanic isolation of control circuits (hereinafter referred to as switching devices) comprising a first input circuit, a first switching element consisting of a first and a second field-effect transistors, a first overload protection circuit consisting of a first diode and a third field-effect transistor, characterized in that , in order to increase reliability and reduce consumption in control circuits, they additionally introduced a second input circuit, a third input circuit, a first transformer, a second transform torus, third transformer, second, third, fourth, fifth, sixth diodes, fourth, fifth, sixth field effect transistors, first, second, third capacitors, first, second, third, fourth, fourth, fifth, sixth resistors, first, second and third generators the outputs of which are connected to the first inputs of the first, second and third input circuits, the first outputs of which are connected to the first contacts of the first, second and third capacitors, the second contacts of which are connected to the first contacts of the primary windings of the first, second and third transforms tori, the second contacts of which are connected to the second outputs of the first, second and third input circuits, the second inputs of which are connected to the first, second and third inputs of the switching devices, the fourth, fifth and sixth inputs of which are connected to the first inputs of the first, second, third generators and the third inputs of the first, second and third input circuits, and the first contact of the first secondary winding of the first transformer is connected to the first contact of the sixth diode, the second contact of which is connected to the gate of the sixth field transistor and with the first contact of the sixth resistor, the second contact of which is connected to the drains of the fourth and sixth field-effect transistors, with the source of the fifth field-effect transistor, with the second contact of the third resistor, with the second contacts of the second and first secondary windings of the second and first transformers, the first contact of the second secondary winding the second transformer is connected to the first contact of the fourth diode, the second contact of which is connected to the first contact of the third resistor, with the gate of the fourth field-effect transistor, The first contact of the second secondary winding of the first transformer is connected to the first contact of the third diode, the second contact of which is connected to the first contact of the second resistor, with the gate of the second field-effect transistor, the source of which is connected to the drains of the first and third field-effect transistors, with the second contacts of the first and fifth resistors, with the second contacts of the first secondary winding of the second transformer and the second secondary winding of the third transformer, the first contact of which is connected to the first contact of the first diode, whose contact is connected to the first contact of the fifth resistor and to the gate of the third field-effect transistor, the source of which is connected to the source of the first field-effect transistor and is the first output of switching devices, the second output of which is connected to the drain of the second field-effect transistor, with the second contacts of the second resistor and the second secondary winding the first transformer, and the first contact of the first secondary winding of the second transformer is connected to the first contact of the second diode, the second contact of which is connected to the first contact of the first resistor and the gate of the first field-effect transistor, the third output of the switching devices connected to the sources of the fourth and sixth field-effect transistors, the fourth output of the switching devices connected to the drain of the fifth field-effect transistor, with the second contacts of the fourth resistor and the first secondary winding of the third transformer, the first contact of which connected to the first contact of the fifth diode, the second contact of which is connected to the first contact of the fourth resistor, the shutter of the fifth field trans a resistor, and the seventh, eighth, ninth inputs of the switching devices are connected to the second inputs of the first, second and third generators, the switching devices are placed in a microassembly with a cover made in the form of digital crystals and transformers, resistors and capacitors, the “power” and “common” terminals which are connected to the respective individual layers of the microassembly, and the wiring of the switching devices is made in two other layers.

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