RU2461047C1 - Device for stabilising temperature of elements of microcircuits and microassemblies - Google Patents

Abstract

FIELD: physics. ^ SUBSTANCE: invention can be used to maintain constancy of properties said devices in a wide range of ambient temperature. The precision electronic devices used can be microcircuits of different degree of integration, up to very-large-scale integration (VLSI), system-on-a-chip, and microassemblies. Temperature of microcircuits and microassemblies is controlled without convection, which enables to use a device for operation in deep space, particularly in space equipment for satellite systems. The device for stabilising temperature of elements of microcircuits and microassemblies has a conductor which is common for the entire device, a dielectric substrate having the shape of a rectangular parallelepiped and made from material with a high heat conduction coefficient, a temperature control circuit, having three leads, the first of which is connected to the common conductor, a temperature sensor connected to the second lead of the temperature control circuit, a blocking capacitor whose first lead is connected to the common conductor, and the second lead is connected to the third lead of the temperature control circuit, a heater which is in form of a rectangular resistive film, one end of which is connected to the common conductor, and the other end is connected to the second lead of the blocking capacitor; the resistive film of the heater lies on the entire back surface of the dielectric substrate; and the device additionally includes a temperature-controlled dielectric layer having a high heat conduction coefficient and having inside it elements of circuits and/or microassemblies lying on the entire working surface of the dielectric substrate, a first heat-insulating layer lying on the entire outer surface of the heater and a second heat-insulating layer lying on the outer surface of said temperature-controlled layer; and the temperature sensor lies on the outer surface of the second heat-insulating layer at its centre. ^ EFFECT: larger volume of the temperature-controlled dielectric layer having inside it elements of microcircuits or microassemblies, having insignificant temperature-control error in a wide range of ambient temperature. ^ 14 dwg

Description

The invention relates to techniques for controlling temperature in precision electronic devices and can be used to maintain the constancy of the parameters of these devices in a wide range of ambient temperatures (TOC). As precision electronic devices, microcircuits of various degrees of integration can be used up to ultra-large integrated circuits - systems on a chip and microassemblies. The temperature control of microcircuits and microassemblies is carried out in the absence of convection, which allows the use of the proposed device for operation in outer space, in particular in space equipment of satellite systems.

A device for thermostating semiconductor wafers of integrated circuits containing a wafer, a temperature control circuit and a temperature sensor and a transistor heater are electrically connected to the temperature control circuit [1]. Thanks to the introduction of a feedback temperature into the temperature control circuit and the implementation of a temperature sensor in the form of a differential amplifier, an increase in thermostating accuracy is achieved by eliminating thermal hysteresis. The disadvantage of this device is that the high accuracy of temperature control on the wafer is achieved only near the location of the temperature sensor, and elements remote from the temperature sensor have a low temperature control accuracy in a wide TOC range due to the finite value of the thermal conductivity of the substrate.

A device for stabilizing the temperature of electro-radio elements containing a substrate, a temperature control circuit, and a temperature sensor and a transistor heater located on the working surface of the substrate electrically connected to the temperature control circuit, the substrate is made in the form of a square, the transistor heater is located on the working surface of the substrate in its central part , the temperature sensor is located at the edge of the working surface of the substrate and the boundaries of the thermostat are marked on the working surface of the substrate area visually distinguishable from other parts of the working surface of the substrate [2]. Due to the fact that the thermal conductivity of the substrate is a finite value, a predetermined range of variation of the temperature of thermostating will be provided on the working surface of the substrate only near the location of the temperature sensor. For this reason, the accuracy of temperature control at various points on the surface of the substrate in a wide range of TOC changes is not the same. In the case when the temperature sensor is located at the edge of the working surface of the substrate, the transistor-heater is located on the working surface of the substrate in its central part, and the substrate is made in the form of a square, the accuracy of temperature control of elements located in a limited area of the surface of the substrate is higher than the accuracy of temperature control of the substrate in the region placement of the temperature sensor. The disadvantage of this device is that high precision temperature control is achieved on a relatively small area of the substrate.

Closest to the claimed object is a device for stabilizing the temperature of elements of microchips and microassemblies containing a dielectric substrate made in the form of a rectangular parallelepiped made of a material with a high coefficient of thermal conductivity, a temperature control circuit and a temperature sensor electrically connected to it and a heater made in the form of a rectangular resistive film, the heater is located on the working surface of the dielectric substrate on the longitudinal axis of this surface throughout the substrate line, one end of the heater is connected directly to the conductor common to the entire device, and the other end is connected through a blocking capacitor, the temperature sensor is located at the edge of the substrate’s working surface on its transverse axis, and the two regions occupied by thermostatically controlled elements are symmetrically located along the entire length of the substrate relative to the longitudinal axis of the working surface of the substrate and are limited by four straight lines that are visually distinguishable from other elements of the working surface of the substrate, the distance to which x is determined by calculation or experimental measurement of the temperature field of the substrate [3]. The disadvantage of the prototype device is that high precision thermostating is achieved in a relatively small area, although this area is larger than in the device for stabilizing the temperature of electro-radio elements described in [2].

Common disadvantages of the above devices [1-3] are the low accuracy of thermostating of radio-electronic elements, which limits the possibility of using thermostatic nodes.

The task to which the proposed technical solution is directed is to increase the volume of the thermostatically controlled dielectric layer with elements of microcircuits and / or microassemblies located inside it, which has a small thermostating error in a wide range of TOC changes.

The solution to this problem is achieved by the fact that in a device for stabilizing the temperature of elements of microcircuits and microassemblies containing a conductor common to the entire device, a dielectric substrate made in the form of a rectangular parallelepiped made of a material with a high coefficient of thermal conductivity, a temperature control circuit having three leads, the first of which connected to a common conductor, a temperature sensor connected to the second terminal of the temperature control circuit, a blocking capacitor, the first terminal of which ohm is connected to a common conductor, and the second output to the third output of the temperature control circuit, the heater is made in the form of a rectangular resistive film, one end of which is connected to a common conductor, and the other end to the second output of the blocking capacitor, the heater resistive film is located throughout the back surface of the dielectric substrate, and a temperature-controlled dielectric layer with a high coefficient of thermal conductivity with elements of circuits and / or microassemblies located on the entire working surface of the dielectric substrate, the first heat-insulating layer located on the entire outer surface of the heater, and the second heat-insulating layer located on the outer surface of the thermostatic layer, and the temperature sensor is located on the outer surface of the second heat-insulating layer in its center.

Figure 1 shows the structural diagram of the proposed device for stabilizing the temperature of the elements of microcircuits and microassemblies, which are indicated: 1 - dielectric substrate made in the form of a rectangular parallelepiped made of a material with a high coefficient of thermal conductivity; 2 - a thermostatically controlled dielectric layer located on the working surface of the dielectric substrate 1 having a high coefficient of thermal conductivity with elements of microcircuits and / or microassemblies inside it and the shape of a rectangular parallelepiped, the side faces of which are in the same planes as the side faces of the dielectric substrate 1; 3 - heater, made in the form of a resistive film located on the entire back surface of the dielectric substrate 1; 4 - the first heat-insulating layer placed on the outer surface of the heater 3; 5 - a second heat-insulating layer located on the outer surface of the thermostatically controlled dielectric layer 2 with chip elements and / or microassemblies located inside it; 6 - a conductor common to the entire device; 7 - a temperature sensor located in the center of the outer surface of the second heat-insulating layer; 8 is a temperature control circuit; 9 - blocking capacitor.

In Fig.2 shows a diagram of the inclusion of the transistor when used as a temperature sensor, and Fig.3 - current-voltage characteristics of this transistor for two values of TOC.

Figure 4 shows the curves of temperature at different points of a rectangular substrate T _P made of VK94 ceramics having dimensions 12 × 16 × 1 mm ³ for different TOC values for the case when the film heater is made in the form of a rectangle and is located on the longitudinal axis of the substrate along its entire length, and the temperature sensor is located at the edge of the working surface of the substrate on its transverse axis (for the prototype device).

Figure 5 shows a diagram of an electrical simulation of the temperature dependence of the substrate of the prototype device on the X coordinate at Y = 0 mm. The heat flux propagation along the right half of a VK94 ceramic substrate having a thermal conductivity coefficient λ = 13.2 W / (m · K) was simulated. The film heater was located on the Y axis along the entire length of the substrate (its width was assumed to be infinitely small). The X coordinate of the right edge of the substrate was 6 mm. Since the length of the substrate was much more than half its width, the temperature change along the Y axis was neglected. The overall dimensions of the substrate were 12, 16, and 1 mm. The dashed lines in Fig. 5 show the sections of dividing the surface of the substrate into squares, with the centers of the squares being located on the X axis.

Figure 6 shows the simulation results of the dependence of the substrate temperature on the X coordinate at Y = 0 mm, obtained in the MicroCAP 8 system of circuit simulation (CCM) [4], for the circuit depicted in figure 5, for different values of TOC. In Fig. 6, a shows the simulation results for the TOC value of 223 K, in Fig. 6, b - for the TOC value of 273 K, and in Fig. 6, c - for the TOC value of 323 K. Fig. 6, d shows the curves the dependence of the substrate temperature T _P on the X coordinate at Y = 0 mm, constructed according to the simulation results reflected in Fig.6, a; 6, b and 6, c. Curve 1 reflects the simulation results for a TOC value of 223 K, curve 2 for a TOC value of 273 K, and curve 3 for a TOC value of 323 K.

Figure 7 shows a diagram of an electrical simulation of the temperature distribution in various parts of the proposed device for stabilizing the temperature of elements of microcircuits and / or microassemblies.

On Fig, a shows the results of modeling the temperature distribution in different parts of the proposed device in the MicroCAP 8 CCM for T _OC = 223 K, in Fig. 8, b - for T _OS = 273 K, and in Fig. 8, c - for T _OS = 323 K.

,

и

обозначены значения температуры в различных частях предлагаемого устройства для ТОС 223К, для ТОС 273 К и для ТОС 323 К. Координатам на оси абсцисс соответствуют точки: Х₁ - точки на внешней поверхности первого теплоизоляционного слоя 4; Х₂ - точки в плоскости контакта диэлектрической подложки 1 и нагревателя 3; X₃ - точки плоскости контакта диэлектрической подложки 1 и термостатируемого слоя 2 с размещенными внутри него элементами микросхем и/или микросборок; Х₄ - точки плоскости контакта термостатируемого слоя 2 и поверхности второго теплоизоляционного слоя 5 и X₅ - точки на внешней поверхности второго теплоизоляционного слоя 5 (см. фиг.1).In Fig.9 shows the temperature in various parts of the proposed device, found as a result of modeling and reflected in Fig.8, a; 8, b and 8, d.

,

and

the temperature values are indicated in various parts of the proposed device for TOS 223K, for TOS 273 K and for TOS 323 K. The coordinates on the abscissa correspond to the points: X ₁ - points on the outer surface of the first heat-insulating layer 4; X ₂ - points in the plane of contact of the dielectric substrate 1 and the heater 3; X ₃ - points of the plane of contact of the dielectric substrate 1 and thermostatic layer 2 with the elements of microcircuits and / or microassemblies located inside it; X ₄ are points of the contact plane of the thermostatic layer 2 and the surface of the second heat-insulating layer 5 and X ₅ are points on the outer surface of the second heat-insulating layer 5 (see Fig. 1).

A device for stabilizing the temperature of elements of microcircuits and / or microassemblies works as follows. The temperature control temperature of layer 2 is selected more than CBT. When you turn on the temperature control circuit, the temperature of the layer 2 and the temperature of the transistor VT, used as a temperature sensor 7 (figure 2), are below the temperature of thermostating. At low temperature, the collector current of the transistor I _{K0 is} small, and the voltage across the collector U _K is large. The increase in voltage U _K applied to the input of the differential amplifier included in the temperature control circuit 8 leads to an increase in current through the heater 3 located on the back surface of the dielectric substrate 1, connected to the output of the differential amplifier. The blocking capacitor 9 reduces the influence of AC pickups on the temperature control circuit. The use of a dielectric substrate 1 having a high coefficient of thermal conductivity allows one to obtain a temperature change in the proposed device practically only in directions perpendicular to the working surface of the substrate, and reduce the calculation of the temperature of the parts of the device during its design to the solution of a one-dimensional problem.

The first heat-insulating layer 4 serves to reduce heat loss. The power released by the heater causes overheating ΔT _{K of the} thermostatically controlled layer 2, which is equal to the difference between the temperature of layer 2 (T _K ) and TOC (T _OS ). In this case, ΔT _K = T _K -T _OS . In this case, the heating of layer 2 and temperature sensor 7 located on the outer surface of the second thermal insulation layer 5 in its center gradually increases to the temperature of thermostating. An increase in the temperature of layer 2 above the temperature of the temperature control leads to an increase in the current value I _{KO of the} collector of the transistor, to a decrease in the voltage U _{K of the} collector and current through the heater 3. In this case, the temperature of layer 2 decreases to the temperature of the temperature control. Subsequently, the process repeats, acquiring an oscillatory character. The _{predetermined} temperature variation temperature range _{ΔТ СТ.З} determines the accuracy of temperature control of layer 2 in the area of the temperature sensor. The second thermal insulation layer 5 is used to increase the change in the magnitude of the control voltage U _K applied to the input of the differential amplifier when changing the TOC (to increase the sensitivity when controlling the temperature).

As the temperature sensor 7, we used a small-sized open-ended bipolar transistor, which reduced the thermal inertia of the sensor and increased the dynamic accuracy of temperature control. The collector of the transistor (temperature sensor 7), electrically connected to the input of the differential amplifier included in the temperature control circuit 8, was included in the circuit with a common emitter (figure 2). From the current-voltage characteristics of the transistor (Fig. 3), it can be seen that with a constant voltage U _ЭБ0 supplied to the base of the transistor VT from resistor R2, an increase in TOC from T ₁ to T ₂ leads to a sharp increase in collector current I _K0 , which causes a decrease in voltage collector U _To . The collector voltage U _{K is} supplied to one of the inputs of the differential amplifier of the temperature control circuit, the heater 3 is connected to its output. Decreasing the voltage at the collector U _K causes a decrease in the current through heater 3 and a decrease in the temperature of the thermostatic layer 2 with chip elements and / or microassemblies inside it . With a decrease in TOC (T _OS ) and temperature T _{K of} layer 2, the collector voltage U _{K of the} transistor (voltage supplied to temperature sensor 7) increases, which leads to an increase in current through heater 3 and to an increase in temperature T _{K of} layer 2. The temperature of temperature control T _CT layer 2 can be changed by changing the reference voltage at the other input of the differential amplifier of the temperature control circuit.

The accuracy of temperature stabilization at different points in a thermostatic space over a wide range of TOC changes is not the same.

Figure 4 shows the temperature curves obtained as a result of electrical modeling of the prototype device [3] at various points of a rectangular VK94 ceramic substrate having dimensions 12 × 16 × 1 mm ³ at different TOC values. The thermal conductivity of the substrate was λ = 13.2 W / (m · K). The specified range of temperature changes in thermostating temperature in the area of the temperature sensor was _{ΔТ ST.З} ≤ 5 K. The maximum thermal power of the heater R _MAX was 2.2 watts. The range of changes in ambient temperature ΔТ _OS = 100 K was in the range of 223 ... 323 K. The temperature of thermostating T _ST was 334 K.

From the graphs of temperature changes along the X axis at a fixed value of the Y coordinate (Fig. 4), it is evident that the accuracy of thermostating of elements located in limited areas of the substrate surface is higher than the accuracy of thermostating of the substrate in the region of the temperature sensor. For different values of the Y coordinate, the graphs of temperature changes along the X axis almost do not differ from each other when the length of the substrate is much more than half its width [3]. This means that with high accuracy it is possible to simulate the temperature change along the X axis, solving the one-dimensional problem without taking into account the temperature change along the Y axis.

The achievement of the technical result in the proposed device in relation to the prototype device is provided by:

- replacing the dielectric substrate with a thermostatic layer with elements of microcircuits and / or microassemblies placed inside it;

- the use of a dielectric substrate of a heat-conducting dielectric in contact with the working surface with a thermostatic layer, and a heater in contact with the entire working surface with the back surface of this substrate;

- applying the first heat-insulating layer to the back surface of the heater;

- applying to another base of the thermostatically controlled layer a second heat-insulating layer and placing a temperature sensor on the outer surface of the heat-insulating layer in its center.

Figure 5 shows a diagram of an electrical simulation of the dependence of the temperature of the substrate T _P on the X coordinate at Y = 0 mm for the prototype device [5]. The heat flux propagation along the right half of the substrate shown in Fig. 4 was simulated for the case when the substrate is made of VK94 ceramics having a thermal conductivity coefficient λ = 13.2 W / (m · K), and when convection is absent. The reduced degree of blackness of the substrate surface is ε = 0.8. The strip film heater was located on the Y axis along the entire length of the substrate, and its width was assumed to be negligible. The X coordinate of the right edge of the substrate was 6 mm. The linear dimensions of the substrate were 12 × 16 × 1 mm ³ . The dashed lines show the areas of dividing the substrate surface into squares, while the centers of the squares were located on the X axis. In the simulation, the voltage V _H in volts was numerically taken equal to the heater temperature (T _N ) in kelvins, and the voltage V _C in volts was the value CBT (T _OS ) in kelvins. The electrical resistance R _λ in ohms was taken numerically equal to the thermal resistance of the substrate square R _λТ = 1 / (λ · δ) = 1 / (13.2 · 1 · 10 ^-3 ) ≈ 76 K / W [5]. The electrical resistance R _i in ohms was chosen numerically equal to the thermal resistance R _iT in K / W between the square area of the partition of the substrate participating in the radiant heat transfer and the environment. The value of R _{iT was} determined using the expression [6]:

,

,

where S _i = (2 · 0.5 · 10 ^-3 ) ² = 0.5 · 10 ^-6 m ² is the area of the partition of the surface of the substrate into squares involved in radiant heat transfer;

α _L = ε · f (T _P , T _OS ) is the heat transfer coefficient of radiation;

ε is the reduced degree of blackness of the heat exchange surface;

f (T _P , T _OS ) = 5.67 · 10 ^-8 (T _P ⁴ -T _OS ⁴ ) / (T _P -T _OS ) - tabulated function [4].

The temperature T _P in the calculation of α _L was chosen equal to T _ST for all squares, since T _P -T _ST << T _P. For the same reason, the resistances R _i were connected to the centers of the squares of the surface areas of the substrate. In this case, heat transfer of the working and back sides of the substrate surfaces with the environment was taken into account.

The area of the end faces of the substrate of the prototype device is much less than the sum of the areas of the working and back surfaces. Therefore, the power withdrawn from the end surfaces, as usual, was neglected [6].

Figure 6 shows the results of electrical modeling of the dependence of the substrate temperature T _P on the X coordinate at Y = 0 mm, obtained in the MicroCAP 8 CCM, for the circuit shown in figure 5, for different values of T _OS . In Fig. 6, a shows the results for T _OS = 223 K, in Fig. 6, b - for T _OS = 273 K, and in Fig. 6, c - for T _OS = 323 K. The temperature of temperature control was chosen T _ST = 334 K, and the range of its change in the region where the temperature sensor was located was ΔТ _СТ = 333.907-333.783 = 0.124 K. The temperature of the right edge of the substrate was 333.783 K for T _OS = 223 K; 333.835 K for T _OS = 273 K and 333.907 K for T _OS = 223 K. Figure 6d shows the curves of the dependence of the temperature of the substrate on the X coordinate at Y = 0 mm, constructed from the simulation results shown in Fig. 6, and ; 6, b and 6, c. Curve 7 shows the simulation results for a TOC value of 223 K, curve 2 for a TOC value of 273 K, and curve 3 for a TOC value of 323 K.

Figure 7 shows a diagram of an electrical simulation of the temperature distribution in various parts of the proposed device for stabilizing the temperature of elements of microcircuits and microassemblies. The simulation was carried out in the approximation of the one-dimensional problem, when the heat flux propagates perpendicular to the beryllium ceramic substrate (99% BeO), which has a large thermal conductivity (λ = 210 W / (m · K) [7]).

As for the model shown in Fig. 5, the value of voltage V _H in volts was numerically taken equal to the value of the temperature of the heater (T _N ) in kelvins, and the value of voltage V _C in volts was taken to be the value of TOC (T _OS ) in kelvins. For the correct comparison of the results when modeling the uneven distribution of temperature in the working area for the model shown in Fig. 5 and the model shown in Fig. 7, the basic dimensions of the thermostatically controlled layer with the elements of microcircuits and / or microassemblies inside it were chosen the same as linear the dimensions of the substrate S _K = 6 × 16 mm ² of the prototype device, and the thickness of the thermostatically controlled layer was taken to be twice as large as the thickness of the substrate of the prototype device (δ _K = 2 mm). The material of the thermostatic layer was chosen with the same coefficient of thermal conductivity λ = 13.2 W / (m · K) as the substrate of the prototype device. The electrical resistance R _λ in ohms was taken numerically equal to the thermal resistance in the direction of propagation of the heat flux R _λT in K / W [3, 5]. For the thermostatic layer in the direction perpendicular to its bases, the thermal resistance R _λKT was:

R _λKT = δ _K / (λ _K · S _K ) = 2 · 10 ^-3 / (13.2 · 6 · 10 ^-3 16 · 10 ^-3 ) ≈1.578 K / W,

accordingly, R _λK = 1.578 Ohms.

For a beryllium ceramic substrate with a thickness of δ _P = 0.5 mm in the direction perpendicular to its working surface, the thermal resistance R _λPT was (see Fig. 7):

R _λPT = δ _P / (λ _P · S _P ) = 0.5 · 10 ^-3 / (210 · 6 · 10 ^-3 16 · 10 ^-3 ) = 0.025 K / W,

accordingly, R _λP = 0.025 Ohms.

For the first heat-insulating layer from the EK16A compound with a thermal conductivity coefficient λ _И1 = 0.3 W / (m · K) [6] and a thickness δ _И1 = 0.3 mm in the direction perpendicular to the working surface of the substrate, the thermal resistance R _λI1T was:

R _λI1T = δ _И1 / (λ _И1 · S _K ) = 0.3 · 10 ^-3 / (0.3 · 6 · 10 ^-3 · 16 · 10 ^-3 ) = 10.417 K / W,

respectively, in ohms - R _λI1 = 10.417 Ohms.

For the second heat-insulating layer, the same dimensions and the same material were chosen as for the first heat-insulating layer. therefore

R _λI2T = R _λI1T = 10.417 K / W,

respectively, in ohms - R _λI2 = R _λI1 = 10.417 Ohms.

The values of thermal resistances R _iT for modeling heat transfer by radiation were determined using the expression [6]:

where the heat transfer coefficient of radiation α _L (T _K , T _OS ) = ε · f (T _K , T _OS ), and the reduced degree of blackness of the substrate surface ε was taken equal to 0.8.

For parts located inside the proposed device, the area S _{i of} heat transfer by radiation into the surrounding space of the i-th part was determined as the product of the perimeter P _i limiting the area of the base by the size δ _i in the direction perpendicular to the base:

S _i = P _i · δ _i = 2 · (6 + 16) · 10 ^-3 · δ _i = 44 · 10 ^-3 · δ _i [m ² ].

For a thermostatic layer δ _i = δ _K = 2 · 10 ^-3 m; S _iK = 88 · 10 ^-6 m ² . For a beryllium ceramic substrate, δ _i = δ _P = 0.5 mm; S _iP = 22 · 10 ^-6 m ² .

Due to the small thickness of the heater, heat transfer by radiation into the surrounding space of its end surfaces was not taken into account.

For the first and second insulating layers δ _i = δ = δ _{I1 I2} = 0.3 mm and S _i radiation heat transfer area in the surrounding area was determined as the sum of the base area and perimeter product P _i, bounding the base area, the size of δ:

S _И1 = S _И2 = 6 · 16 · 10 ^-6 + П _i · δ _i = 6 · 16 · 10 ^-6 + 44 · 10 ^-3 · 3 · 10 ^-3 = 10.92 · 10 ^-5 m ² .

On Fig, a shows the simulation results in the MicroCAP 8 SMS [6] for T _OC = 223 K, in Fig. 8, b - for T _OS = 273 K, and in Fig. 8, c - for T _OS = 323 K. The temperature of thermostating was chosen T _ST = T _K = 334 K. When modeling was assumed the absence of convection.

For T _OS = 223 K f (T _K , T _OS ) = 5.094; α _L (334, 223) = 4.075.

The values of thermal resistances R _iT for modeling heat transfer by radiation into the environment for T _OC = 223 K were:

- for a thermostatic layer R _iKT = (4.075 · 88 · 10 ^-6 ) ^-1 = 2789 K / W, respectively R _iК = 2789 Ohm;

- for the substrate R _iПТ = (4.075 · 22 · 10 ^-6 ) ^-1 = 11150 K / W, respectively R _iП = 11150 Ohm;

- for the first and second heat-insulating layers R _iИ1Т = R _iИ2Т = (4.075 · 10.92 · 10 ^-5 ) ^-1 = 2.247 · 10 ³ K / W, respectively R _iИ1 = R _iИ2 = 2247 Ohm.

For T _OS = 273 K f (T _K , T _OS ) = 6.404; α _L (334, 273) = 5.123.

The values of thermal resistances R _iT for modeling heat transfer by radiation into the environment for T _OC = 273 K were:

- for a thermostatic layer R _iKT = (5.123 · 88 · 10 ^-6 ) ^-1 = 2218 K / W, respectively R _iК = 2218 Ohm;

- for the substrate, R _iPT = (5.123 · 22 · 10 ^-6 ) ^-1 = 8873 K / W, respectively, R _iП = 8873 Ohm;

- for the first and second heat-insulating layers, R _iИ1Т = R _iИ2Т = (5.123 · 10.92 · 10 ^-5 ) ^-1 = 1.788 · 10 ³ K / W, respectively R _iИ1 = R _iИ2 = 1788 Ohm.

For T _OS = 323 K f (T _K , T _OS ) = 8.042; α _L (334, 273) = 6.434.

The values of thermal resistances R _iT for modeling heat transfer by radiation into the environment for T _OC = 323 K were:

- for a thermostatic layer R _iKT = (6.434 · 88 · 10 ^-6 ) ^-1 = 1766 K / W, respectively R _iК = 1766 Ohm;

- for the substrate, R _iПТ = (6.434 · 22 · 10 ^-6 ) ^-l = 7065 K / W, respectively, R _iП = 7065 Ohm;

- for the first and second heat-insulating layers R _iI1T = R _iI2T = (6.434 · 10.92 · 10 ^-5 ) ^-1 = 1.423 · 10 ³ K / W, respectively R _iI1 = R _iI2 = 1423 Ohm.

In Fig.9 shows the temperature in various parts of the proposed device for stabilizing the temperature of the elements of microcircuits and / or microassemblies, found by the simulation results reflected in Fig.8, a; 8, b and 8, c. The coordinates on the abscissa axis (see figure 1) correspond to the points: X ₁ - points on the outer surface of the first heat-insulating layer 4; X ₂ - points in the plane of contact of the dielectric substrate 1 and the heater 3; X ₃ - points of the plane of contact of the dielectric substrate 1 and thermostatic layer 2 with the elements of microcircuits and / or microassemblies located inside it; X ₄ are the points of the contact plane of the thermostatic layer 2 and the surface of the second heat-insulating layer 5 and X ₅ are the points on the outer surface of the second heat-insulating layer 5.

From the digital data shown in Fig. 9, it can be seen that the maximum temperature control error in the volume of the thermostatic layer when the temperature of the _OS environment changes from 223 K to 323 K was 0.141 K when it is changed to 0.432 K. on the temperature sensor. as in the prototype device with a substrate volume that is two times smaller than the volume of the thermostatic layer in the inventive device, as can be seen from the graph depicted in Fig.6, even a smaller substrate volume had a greater thermostating error. This proves the achievement of the technical result - an increase in the volume of the region with a small thermostating error in a wide range of TOC changes when using the proposed solution.

In the prototype device (see Fig.6), the change in temperature sensor heating was 0.124 K, that is, 3.5 times less than in the inventive device. This made it possible to use a temperature sensor with a lower sensitivity in the inventive device, which further increased the stability of the temperature stabilization system.

Information sources

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3. Pat. RF №235016, class G05D 23/19. Kozlov V.G., Alekseev V.P., Karaban V.M. Device for stabilizing the temperature of elements of microchips and microassemblies. Publ. 03/10/2009. Bull. No. 13 is a prototype.

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Claims (1)

A device for stabilizing the temperature of elements of microcircuits and microassemblies, containing a conductor common to the entire device, a dielectric substrate made in the form of a rectangular parallelepiped made of a material with a high coefficient of thermal conductivity, a temperature control circuit having three terminals, the first of which is connected to a common conductor, a temperature sensor, connected to the second terminal of the temperature control circuit, a blocking capacitor, the first terminal of which is connected to a common conductor, and the second terminal is connected to the third output of the temperature control circuit, a heater made in the form of a rectangular resistive film, one end of which is connected to a common conductor, and the other end to the second output of the blocking capacitor, characterized in that the heater resistive film is located on the entire back surface of the dielectric substrate, and the composition of the device is additionally introduced thermostatically controlled, having a high coefficient of thermal conductivity, a dielectric layer with circuit elements and / or microsb located inside it rock, located throughout the working surface of the dielectric substrate, a first insulating layer disposed on the entire outer surface of the heater and a second insulating layer disposed on the outer surface of said thermostatic layer and the temperature sensor is disposed on the outer surface of the second insulation layer at its center.

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