RU2444124C1 - Generator of electric kacher circuit breaks on transistor - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: generator of electric circuit breaks on a transistor differing by the fact that under subthreshold and above-threshold voltage of a supply source in a collector breach there are conditions developed for extraction of electrons towards the positive pole of the supply source. Filling of the transistor's crystal volume with holes forms a short-term break of the circuit in the end of the period, during which the initial concentration of electrons is restored, and during the entire pulse-to-pulse period the voltage is generated on a basic electrode, and as a result a voltage drop is arranged between external electrodes inside the transistor, which is inverse to the supply source of the collector branch and balancing along the amplitude along the entire crystal as the holes concentration increases.

EFFECT: expansion of functional capabilities of the break generator due to conversion of non-electric values into current, voltage, frequency without conversions, and transfer of information through solid media.

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Description

The invention relates to the fields of automation, communications, electronics, energy.

Known kacher on a radio tube or transistor, see the description of the Application No.2010138295 / 089 (054709).

The application sets out the features related to the radio tube and transistor, but without taking into account the specifics of the physics of the transistor, requiring patent protection of additional distinctive features.

The generator of breaks in the electric circuit has unique physical properties previously discovered using a Tesla transformer. The difference between a Tesla discharger and a kacher is that the kacher (reactance switcher) is an electronic circuit operating in continuous mode. This allows you to create a DC transformer, an absolute sensor - converts non-electric quantities into current, voltage, frequency directly without conversion, transmit information through continuous media, and much more, which is the purpose of the invention.

If the transistor crystal for some time will consist entirely of holes (for example, at absolute zero temperature), in the absence of electrons, then this means that it has become an insulator.

It is known that when the pn junction is illuminated with light, a potential difference arises at its electrodes. Electrons receive additional energy of light quanta, and leaving the valence band of the atom, go to a higher allowed energy level in the conduction band. Due to the excess electron density supported by the light, a potential difference arises at the outer boundaries of the transition.

Observation of the * 1.c.a circuit from the pulse generator, inductance, and pn junction shows that, after the pulse of the external generator (1.21.a, 1.ab.a), holes are ionized for a long time (directly dependent on the inductance and pulse amplitude) crystal, while the electrodes of the diode 73 are observed voltage 71 is almost the same as during exposure to an external pulse. This is because the electron, returning from the conduction band to the valence band, releases a quantum of energy observed at the pn junction in the form of a voltage. Those. an event is observed that is the reverse of what happened when the pn junction was illuminated.

When the concentration of electrons in the crystal drops to zero, a circuit break occurs, which is confirmed by the reaction of the occurrence of self-induction EMF 1.71.a, which is then converted into an oscillatory process. The state of open circuit cannot last long, since the temperature, magnetic, and electrical components are always present in the crystal as a deionizer. At the time of the rupture, a certain number of electrons has time to arise, with energy similar to capacitive, which reacts with inductance, as a result, a damped oscillatory process occurs.

In 1.21.a, at shunt 21, an increase in current is observed for the duration of the generator pulse, followed by a smooth decrease to 0 A. At this time, a voltage of 0.7 V is observed at the base electrode (according to Ohm's Law, if the current tends to 0, and the voltage at this does not change, it means that the resistance of the circuit becomes equal to infinity), and at 0 A the still unnoticeable oscillatory process begins.

An open circuit is also observed on the secondary winding ab (1.ab.a). The pulse time from the generator 72 looks like a negative outlier, and the ionization time of the holes is positive. Measurements are made in the secondary circuit, i.e. through a magnetic field.

During the action of a pulse from an external generator, the electronic component of conductivity prevails. Because of this, the negative signal in the secondary winding. After the pulse, hole conductivity predominates, and this corresponds to a positive signal. These judgments derive from their Hall effect.

Mutual suppression of the hole component of the electronic component (caused by a pulse source with an amplitude of 8 V, see 1.p.a) can be seen in experiments 1.41.b, c, d, 2.41, ab, d with the opposite inclusion of the base and collector coils (negative feedback )

The following statements are the basis for explaining the principle of action of quality.

1. If a certain number of electrons is injected from one side of the transistor’s crystal, and a larger number of electrons is extracted on the opposite side, then a voltage gradient arises from 0 V on the plus side to the power supply to 0.7 V on the base electrode, with an increase to the opposite side of the crystal directed to the minus of the power source. See 1.vg.g.

2. The inductance at the base (as well as its absence) initiates the generation of holes in the base region.

3. The inductance of the collector branch provides the extraction of electrons from the crystal of the transistor, through the resistance of the inductance.

4. The base current is compensatory, directed from a larger voltage on one of the electrodes of the transistor's crystal to a lower one on the other electrode.

5. An open circuit is the removal of electrons from a crystal.

6. Burst voltage pulses do not correspond to current. The current is placed in the time interval between the burst pulses.

7. The voltage in the base and collector branches, relative to the poles of the power source of the collector branch, are in the same phase (directly on the base and collector electrodes they are in antiphase, since they are measured relative to the direction of the current passing at the measured points).

Table 1 summarizes the effects inherent in the quality collected on an npn transistor.

In all the circuits 1.71.a, b, c, d, the base electrodes in inter-pulse time have a voltage of about 0.7 V.

In all schemes, the voltage at the emitter and collector in the inter-pulse period is close to 0 V relative to the common pole of the collector branch power supply.

In all circuits, the base current is negative and decreasing to 0 A.

In all circuits, the base current is directed from the emitter to the base, even in the absence of mutual induction between the base and collector coils. This can only be if there is a voltage source in the branch, which was originally the pulse of an external generator. But autonomous oscillations without mutual induction also occur at the end of the pulse. This means that the voltage source that creates the base current is inside the transistor's crystal.

Conclusion - the voltage at the base is intermediate. Inside the crystal, the voltage at the edges varies from 0 V on the side facing the plus side of the collector-emitter branch power supply to +0.7 V on the base electrode, increasing to the side facing the negative pole, as shown in the graph U (x) 1.vg .g.

The base current is not, in the generally accepted sense, the base current, which makes it possible to inject the main carriers from the emitter into the base. This is a compensation current, arising from the transition of excess electrons from a larger potential from inside the crystal to a smaller one in the base, through a low resistance of the basic inductance. A hole plug is formed with increasing hole concentration in the crystal. The internal voltage throughout the crystal is balanced, causing a circuit break.

The energy transferred in the duty cycle to the magnetic moments of the atoms of the surrounding inductance of the substance is returned in the form of a self-induction voltage pulse that occurs when the circuit breaks, many times exceeding the supply voltage level.

In table 1, all the oscillograms shown occur at a sub-threshold collector voltage of 0.3 V. At the base at this time, 0.7 V (see 1.71.c, d).

Conclusion: At the end of the pulse from an external generator, ionization of the holes occurs for some time. With the removal of electrons from the crystal of the transistor, the circuit breaks, causing a self-induction pulse. This condition is held in nanoseconds. In the break pause, the electron concentration in the transistor crystal is restored. The process is similar to the fact that when the pn junction is illuminated with light, only in this case does the return energy of the mechanically unfolded magnetic moments of the atoms of the material surrounding the inductance participate, committed by the transfer of energy by the electron current in interpulse time. The reduced electrons are again removed from the crystal in the next period, and again another pulse of chain breaking arises.

Table 2 repeats the same steps with the pnp transistor as in table 1 with npn. Here the subthreshold mode is obtained at a lower power level - 0.2 V. This is due to the fact that the transistor is more doped with acceptors. The electronic component is insignificant and is present in the base (and not in donor-doped emitter and collector as in npn).

In all the circuits shown in the tables, when entering mutual induction, the frequency decreases. This is because during mutual induction, a larger number of carriers from the volume of the crystal, electrons, and holes are involved in the kacher process.

Table 3 shows the schemes with OE, OB, OK, NOE. Here, as in tables 1 and 2, all diagrams of currents and voltages coincide in shape. Despite the fact that the supply voltage varies 10 times, the amplitudes of the currents differ little. In all cases, the collector and emitter voltages in the interpulse gap are almost equal to 0 V, which corresponds to the state of the open transistor. The base current in all cases decreases, which corresponds to the locking of the transistor in the well-known principle of the transistor. In all cases, the base voltage is about 0.7 V.

Scheme 3.c.b confirms Proposition 1. Here 71.81 ~ -0.7 V despite the fact that 8 _n 1 = 7 V. If 71 is taken as 0 V (insert the oscilloscope probe probe into it), then everything will fit into its own places. On the base there will be +0.7 V, on the emitter and collector about 0 V, the rest as usual with OE. The electric field ab, vg changes around the zero axis and is the unlocking (its low-amplitude part) collector and emitter junctions.

It is important to note that ab and br are in the same phase, the burst pulses are directed in the same direction (on the oscillograms obtained directly from the inductors in different directions, this is explained by the fact that measurements are made with respect to different directions of the current). In this case, measurements are made with a consonant (beginning to beginning) and coaxial installation of coils.

The launch of the kacher process does not always occur autonomously. It is necessary to create an external effect by touching the base with tweezers, or by transforming it into inductance by an independent working launch-quality kacher, or by a single unlocking pulse into the base. The initial autonomous inclusion can be provided by an external power source or divider, which opens the diffusion potential barrier at the base junction with a sub-threshold voltage level. In generation mode, it can be turned off.

If a DC voltage source with a polarity of the opposite polarity of the collector branch power supply is inserted into the base branches shown in table 3.c.a, b, the generation will continue until the voltage of the source of such an offset is equal to the voltage of the collector branch power source . This also confirms the existence of a hole plug. 3.sg at an inverse voltage from an external source will work at an above-threshold supply voltage of the collector branch.

Table 4.c.a shows a two-transistor cacheter operating at a sub-threshold power level for each individual silicon transistor, when 0.7 V drops on each transistor. Transistors of different polar conductivities having a common current show different voltage amplitudes at different poles of the same inductance 4.71.81.a. This is due to the fact that the pnp transistor has a lower intrinsic resistance, since it is more doped with acceptors than the npn transistor, and with a common current for both transistors, a lower voltage drops at a lower resistance.

The following can be said about the 4.sb quality. From the experiments, acting on the collector branch with a pulse from an external generator and at the same time applying a subthreshold bias to the base, it can be seen that the inductance with the electrons of the crystal (current) of the transistor is capable of synchronous harmonic oscillations. The magnitude of the inductance can vary within very large limits (this is not resonance). The presence of a positive subthreshold bias (above the threshold opens the transistor, and shorts the power source through a small inductance, causing thermal breakdown of the transistor), allows you to make the amplitude of these oscillations higher than the voltage of the power source. The negative half-wave goes beyond the minus level of the collector branch power supply and the electrons directed by the internal electric field of inductance meet the electric field of the positive pole of the collector branch power supply, which is obviously higher than the part of the negative half-wave that has gone beyond the zero level.

The start of electron selection is accompanied by a pulsation. A hole component of 4.71.b. is added to the external voltage of 0.5 V. There is a current 31, which removes the electrons from the crystal, creating a tube. 4.31.b following the electron selection current, two reactions are observed for the half-wave to exit saturation and enter it. Positive outburst 81 remains currentless, as in other types of kacher.

4.s.v works on the same principle as the 4.s.b, only in this case, instead of the external source acts currentless coil 7 _N 7 that its electric field reveals the base-emitter potential barrier at the level of the positive half ( which is observed as negative on the collector, see Statement 7) conditions are created for the transfer of electrons through the collector.

At 4 p.m., a clot of energy appears at the free end 7, the active interaction of which with the external environment causes an increase in the voltage of the power source and current in the collector branch compared to those power parameters when there was no interaction with the external environment (i.e. introduction of external energy into the device). The phenomenon is observed constantly. On this basis, numerous authors make allegations about the possibility of creating electric generators with an efficiency above 100%. The phenomenon deserves further careful study.

All presented circuits can be reproduced on any transistors of any power. With inductances of any winding type from 1 turn and above, with chip inductances. They can be etched on metallized surfaces. May consist of conductors of high resistance materials. Preferred cores are single-band, but can be any.

Field effect transistors operate in quality mode. Their properties coincide in many respects with a p / lamp kacher.

* Symbols: the sequence of characters before the points hereinafter means - table, line, column: [table number], [line in this table, letters “n” - name, “p” - parameters, “c” - diagram, numbers and paired letters in a line mean points on the diagram between which an oscillogram or other measurement is made], [column].

Instead of, for example, U _num , 81 potential difference between the measured points indicated on the diagrams is written in the text. In different schemes, similar points are denoted by the same numbers.

** At the same time, the following rules should be adopted for clarity:

1. At the beginning of the inductance, we accept: (like a European letter), the beginning is the upper left corner, the end is the lower right (Text on the right).

2. Arrangement of turns to the right of the beginning from top to bottom clockwise (see 4.s.d). In the diagrams, the beginning of the inductance is indicated by a dot, and by the index “n” with a digit indicating the measurement point.

3. The beginning of the base inductance is always connected to the base. The beginning of the collector inductance is always connected to a power source.

In this case, with a consonant arrangement of coils “start to start”, a positive mutually inductive coupling is provided.

- The zero reference line in the oscillograms is indicated by a pale horizontal line.

- The upper digit in the waveforms means the price of one division of the oscilloscope grid in µS, the closest to the zero line is the vertical division value in volts for this beam.

- On some waveforms, the rays are indicated by measured points

• sub-threshold level - the voltage level at the pn junction corresponding to the cutoff mode for this transistor should be considered.

• subthreshold level - the voltage level at the pn junction should be considered, at which the transistor is able to enter the active mode and saturation mode.

Claims (1)

A generator of electrical circuit breaks on a transistor arising in circuits consisting of external elements that are part of an electrical circuit on a transistor that generates self-induction voltage pulses at the moment of interruption of the current flow, consisting of one or two transistors and external inductors with or without cores, while the external generator branches may additionally include diodes, resistors, capacitors, power supplies, and inductors may not consist in feedback, and in the same state be in positive state feedback, and for certain winding ratios, generate being in negative feedback, characterized in that under sub-threshold and sup-threshold voltage of the power source in the collector branch, conditions are created for the extraction of electrons towards the positive pole of the power source in order to increase the hole concentration in the volume of the transistor crystal, in this case, filling the volume of the transistor crystal with holes forms a short-term circuit break at the end of the period during which the initial electron centering, and during the entire interpulse period, a voltage is formed on the base electrode, corresponding to the release of the transition energy of electrons from a high energy level to a lower one, because of this, a voltage drop is created between the external electrodes inside the transistor, which is inverse to the collector branch power source, equalizing in amplitude along the entire crystal with increasing hole concentration, and during the extraction of electrons, which is expressed in the emitter collector current increasing until rupture tera, at the same time, the base current becomes decreasing, since it is compensating, removing electrons from the outside of the transistor’s crystal with a high voltage inside the crystal to a lower voltage on the base electrode, and at the end of the period when the current flow breaks in the branches, the self-induction voltage appears, many times exceeding voltage level supplying the branch.

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