RU2351897C1 - Integrated micromechanical accelerometer gyroscope - Google Patents

Abstract

FIELD: physics.

SUBSTANCE: device contains inertial mass located with backlash concerning substrate with planar immobile electrodes located on it, two immobile electrodes with edge structures on one hand, and also two mobile electrodes of electrostatic drive units executed from semiconductor material in the form of plates with edge structures on the other hand and located with backlash concerning semiconductor substrate. Thus planar immobile electrodes form parallel-plate capacitors in plane of their plates through lateral backlashes with rectangular framework.

EFFECT: possibility of measuring quantities of angular velocity and acceleration along axes X and Y, located crossly perpendicularly in substrate plane, and axis Z guided perpendicularly the substrate plane.

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Description

The present invention relates to the field of measuring technology and microsystem technology, and more particularly to integrated measuring elements of angular velocity and acceleration.

Known integrated micromechanical gyroscope [V.P. Timoshenkov, S.P. Timoshenkov, A.A.Mindeeva. Development of the design of a microgyroscope based on the KNI technology, University News, Electronics, No. 6, 1999, p. 49, Fig. 2], containing a dielectric substrate with four electrodes sprayed on it and an inertial mass located with a gap relative to the dielectric substrate, made in in the form of a plate of semiconductor material, forming a flat capacitor with a pair of electrodes deposited on the substrate and connected to the internal oscillatory system using elastic beams made of semiconductor material, which the ends are rigidly attached to the inertial mass, and the others to the internal oscillatory system made of a semiconductor material, forming with a different pair of electrodes deposited on the substrate a flat capacitor used as an electrostatic drive, the oscillating system being connected to the external frame using elastic beams, made of semiconductor material, which are attached at one end to the internal oscillatory system, and at the other to an external frame made of semiconductor material and located directly on the dielectric substrate.

This gyroscope allows you to measure the magnitude of the angular velocity while rotating it around the Z axis, perpendicular to the plane of the gyroscope substrate.

Signs of an analogue that coincide with the essential features are two fixed electrodes of electrostatic drives with comb structures on one side, four supports made of a semiconductor material and located directly on a semiconductor substrate, a rectangular frame, an inertial mass made of semiconductor material and located with a gap with respect to substrates, elastic beams made of a semiconductor material and located with a gap relative to the substrate, ele ctrode located directly on the substrate.

A design flaw in the gyroscope is the impossibility of measuring the angular velocity around mutually perpendicular axes X, Y located in the plane of the substrate and acceleration along the axes X, Y, Z.

A functional analogue of the claimed object is a micromechanical gyroscope [SEAlper, T.Akin, A Planar Gyroscope Using a Standard Surface Micromachining Process, The 14th European Conference on Solid-State Transducers (EUROSENSORS XIV), 2000, p.387, fig.1], comprising a substrate with four electrodes located on it made of a semiconductor material, an inertial mass located with a gap relative to the substrate, made in the form of a plate of semiconductor material, forming a flat capacitor with a pair of electrodes located on the substrate and connected with an external suspension using elastic beams made of a semiconductor material, which at one end are rigidly attached to the inertial mass, and the other to an external suspension made of a semiconductor material and forming with a different pair of electrodes located on the substrate a flat capacitor used as an electrostatic drive, the external suspension being connected with supports using elastic beams made of semiconductor material, which are rigidly connected to the external suspension at one end and the supports at the other nennymi of semiconductor material and located directly on the substrate, and two electrodes made of semiconductor material and located directly on the substrate with a gap relative to the outer suspension so as to form a flat capacitors which are used as electrostatic actuators.

This gyroscope allows you to measure the magnitude of the angular velocity while rotating it around the Z axis, perpendicular to the plane of the gyroscope substrate.

Signs of an analogue that coincide with the essential features are two fixed electrodes of electrostatic drives with comb structures on one side, four supports made of a semiconductor material and located directly on a semiconductor substrate, a rectangular frame, an inertial mass made of semiconductor material and located with a gap with respect to substrate, a fixed electrode of a capacitive displacement transducer made of a semiconductor material, Assumption on the substrate, the elastic beams made of semiconductor material and disposed with a gap relative to the substrate.

A design flaw in the gyroscope is the impossibility of measuring the angular velocity around mutually perpendicular axes X, Y located in the plane of the substrate and acceleration along the axes X, Y, Z.

Of the known closest in technical essence to the claimed object is an integrated micromechanical gyroscope [ASPlani, AASeshia, M. Palaniapan, RTHowe, J. Yasaitis, Coupling of resonant modes in micromechanical vibratory rate gyroscopes, NSTI-Nanotech 2004, vol. 2 , 2004, p.335, fig.l], containing a semiconductor substrate with two planar fixed electrodes located on it made of a semiconductor material, two fixed electrodes with comb structures on one side made of a semiconductor material and located directly on the semiconductor substrate, four supports made of semiconductor material and located directly on the semiconductor substrate, a rectangular frame made of semiconductor material connected to the supports using four elastic beams made of semiconductor material and located with a gap relative to the substrate, which are rigidly attached at one end to a rectangular frame, and others to supports, inertial mass made of semiconductor material and located with a gap relative the substrate, which forms flat capacitors in the plane of their plates with two planar fixed electrodes located on the semiconductor substrate through the side gaps connected to the rectangular frame using the other four elastic beams made of semiconductor material and located with a gap relative to the substrate, which are rigidly fixed at one end to inertial mass, and others to a rectangular frame.

This gyroscope allows you to measure the magnitude of the angular velocity when it rotates around the Z axis, perpendicular to the plane of the substrate.

Signs of the prototype, coinciding with the essential features, are a semiconductor substrate with planar stationary electrodes located on it made of a semiconductor material, two stationary electrodes with comb structures on the one hand, made of a semiconductor material and located directly on the semiconductor substrate, four supports made of semiconductor material and located directly on the semiconductor substrate, a rectangular frame, made made of semiconductor material connected to supports using four elastic beams made of semiconductor material and positioned with a gap relative to the substrate, inertial mass made of semiconductor material and located with a gap relative to the substrate, the other four elastic beams made of semiconductor material and located with clearance relative to the substrate.

The reasons hindering the achievement of the technical result is the impossibility of measuring the angular velocity around mutually perpendicular axes X, Y located in the plane of the substrate and acceleration along the axes X, Y, Z.

The objective of the invention is the ability to measure angular velocity and acceleration along the X, Y axes located in the plane of the substrate, and the Z axis directed perpendicular to the plane of the substrate of the gyroscope-accelerometer.

The technical result achieved by the implementation of the present invention consists in the possibility of measuring the angular velocity and acceleration around the X, Y axes located in the plane of the substrate, and the Z axis directed perpendicular to the plane of the substrate of the gyroscope-accelerometer.

The technical result is achieved by introducing two movable electrodes made of semiconductor material in the form of plates with comb structures on one side and located with a gap relative to the semiconductor substrate, an additional stationary electrode made of a semiconductor material and located directly on the substrate, four additional elastic beams, made of a semiconductor material and located with a gap relative to the semiconductor substrate, These planar fixed electrodes form flat capacitors in the plane of their plates through lateral gaps with a rectangular frame.

In order to achieve the required technical result, an integral micromechanical gyroscope-accelerometer containing a semiconductor substrate with planar stationary electrodes located on it made of a semiconductor material, two stationary electrodes with comb structures on one side made of semiconductor material and located directly on the semiconductor substrate, four supports made of semiconductor material and located directly on the semiconductor water substrate, a rectangular frame made of a semiconductor material, connected to supports using four elastic beams made of semiconductor material and located with a gap relative to the substrate, an inertial mass made of semiconductor material and located with a gap relative to the substrate, the other four elastic beams, made of a semiconductor material and arranged with a gap relative to the substrate, two movable electrodes made of a semiconductor about the material in the form of plates with comb structures on one side and located with a gap relative to the semiconductor substrate, an additional stationary electrode made of semiconductor material and located directly on the substrate, four additional elastic beams made of semiconductor material and located with a gap relative to the semiconductor substrate, moreover, planar stationary electrodes form flat capacitors in the plane of their plates through lateral gaps with a straight clay frame.

Comparing the proposed device with the prototype, we see that it contains new features, that is, meets the criterion of novelty. Carrying out a comparison with analogues, we conclude that the proposed device meets the criterion of "significant differences", since no new features are shown in the analogues.

Figure 1 shows the topology of the proposed integrated micromechanical gyroscope-accelerometer and sections are shown. Figure 2 shows the structure of the proposed integrated micromechanical gyroscope-accelerometer.

The integrated micromechanical gyroscope-accelerometer (Fig. 1) contains a semiconductor substrate 1 with two planar fixed electrodes 2, 3 located on it and a fixed electrode 4 made of a semiconductor material, two fixed electrodes with comb structures on one side 5, 6 made of semiconductor material and located directly on the semiconductor substrate 1, two movable electrodes of electrostatic drives with comb structures on one side 7, 8, made in in the form of wafers made of semiconductor material and arranged with a gap relative to the semiconductor substrate 1, forming electrostatic interaction with the stationary electrodes 5, 6 in the plane of their wafers through the side gaps and interpenetrating each other by the comb of electrodes, and connected to the semiconductor substrate 1 by means of elastic beams 9, 10, 11, 12, made of semiconductor material, which are connected at one end to the movable electrodes of electrostatic drives 7, 8, and at the other with supports 13, 14, 15, 16, made of a semiconductor material and located directly on the semiconductor substrate 1, a rectangular frame 17 made of a semiconductor material and located with a gap relative to the semiconductor substrate 1, forming flat capacitors with two stationary electrodes 2, 4 in the plane of their plates and through the side gaps connected to movable electrodes 7, 8 using four elastic beams 18, 19, 20, 21 made of semiconductor material and located with a gap relative to the semiconductor of the substrate 1, which at one end are rigidly attached to the rectangular frame 17, and at the other to the movable electrodes 7, 8, an inertial mass 22 made of semiconductor material and located with a gap relative to the semiconductor substrate 1, forming a flat capacitor connected to the stationary electrode 3, connected with a rectangular frame 17 using four elastic beams 23, 24, 25, 26 made of a semiconductor material and located with a gap relative to the semiconductor substrate 1, which are rigidly attached at one end replicated to the inertial mass 22, and others to the rectangular frame 17.

The device operates as follows.

When alternating voltages are applied to the stationary electrodes 5, 6, 180 ° phase-shifted relative to each other, relative to the movable electrodes 7, 8, an electrostatic interaction arises between them, which leads to vibrations of the latter in the plane of the semiconductor substrate 1 (along the Y axis) due to the s-shaped bending of the elastic beams 9, 10, 11, 12 connecting the movable electrodes 7, 8 with the supports 13, 14, 15, 16. The oscillations of the movable electrodes 7, 8 are transmitted to the rectangular frame 17 through the elastic beams 18, 19, 20, 21, and the vibrations of the rectangular frame 1 7 are transmitted to the inertial mass 22 through the elastic beams 23, 24, 25, 26. The gap between the planar fixed electrodes 2, 3 and the rectangular frame 17 and the fixed electrode 4 and the inertial mass 22, respectively, does not change. The voltages generated in the pairs of capacitive displacement transducers formed by planar fixed electrodes 2, 3 and a rectangular frame 17 and a fixed electrode 4 and inertial mass 22, respectively, are the same.

When rotation of the semiconductor substrate 1 (angular velocity) occurs around an axis located in the plane of the semiconductor substrate 1 (X axis), the inertial mass 22 under the influence of Coriolis forces begins to oscillate perpendicular to the plane of the semiconductor substrate 1 due to the s-shaped bending of the elastic beams 23, 24 , 25, 26. The voltage difference generated by the capacitive displacement transducer formed by the stationary electrode 4 and the inertial mass 22, respectively, due to a change in the gap between them, character determines the value of the angular velocity. The voltages generated by the capacitive displacement transducers formed by the electrodes 2, 3 and the rectangular frame 17, respectively, are the same.

When the rotation of the semiconductor substrate 1 (angular velocity) occurs around an axis perpendicular to the plane of the semiconductor substrate 1 (Z axis), the inertial mass 22 under the influence of Coriolis forces begins to oscillate in the plane of the semiconductor substrate 1 (along the X axis) due to the s-shaped bend elastic beams 18, 19, 20, 21. The voltage difference generated by the capacitive displacement transducers formed by planar fixed electrodes 2, 3 and a rectangular frame 17, respectively, by changing the magnitude s clearance therebetween, characterizes the magnitude of the angular velocity. The voltages generated in the capacitive displacement transducer formed by the electrode 4 and the inertial mass 22, respectively, are the same.

When applying to the planar stationary electrodes 2, 3 alternating voltages, 180 ° phase-shifted relative to each other, relative to the rectangular frame 17, an electrostatic interaction occurs between them, which leads to vibrations of the latter in the plane of the semiconductor substrate 1 (along the X axis) due to s-shaped bending of elastic beams 18, 19, 20, 21 connecting the rectangular frame 17 with the movable electrodes 7, 8. The oscillations of the rectangular frame 17 are transmitted to the inertial mass 22 through the elastic beams 23, 24, 25, 26. The gap between the active electrode 4 and the inertial mass 22, respectively, does not change. The gap between the stationary electrodes 5, 6 and the movable electrodes 7, 8, respectively, does not change. The voltages generated in the pairs of capacitive displacement transducers formed by the fixed electrode 4 and the inertial mass 22 and the fixed electrodes 5, 6 and the movable electrodes 7, 8, respectively, are the same.

When the rotation of the semiconductor substrate 1 (angular velocity) occurs around an axis located in the plane of the semiconductor substrate 1 (Y axis), the inertial mass 22 under the influence of Coriolis forces begins to oscillate perpendicular to the plane of the semiconductor substrate 1 due to the s-shaped bending of the elastic beams 23, 24 , 25, 26. The voltage difference generated by the capacitive displacement transducer formed by the stationary electrode 4 and the inertial mass 22, respectively, due to a change in the gap between them, character determines the value of the angular velocity. The gap between the stationary electrodes 5, 6 and the movable electrodes 7, 8, respectively, does not change.

When a rotation of the semiconductor substrate 1 (angular velocity) occurs around an axis perpendicular to the plane of the semiconductor substrate 1 (Z axis), the inertial mass 22 under the influence of Coriolis forces begins to oscillate in the plane of the semiconductor substrate 1 (along the Y axis). The oscillations of the inertial mass 22 are transmitted to the rectangular frame 17 through the elastic beams 23, 24, 25, 26, and the oscillations of the rectangular frame, in turn, are transmitted to the movable electrodes 7, 8 through the elastic beams 18, 19, 20, 21, respectively. The voltage difference generated by the capacitive displacement transducers formed by the fixed electrodes 5, 6 and the movable electrodes 7, 8, respectively, due to a change in the gap between them, characterizes the magnitude of the angular velocity. The gap between the planar fixed electrodes 2, 3 and the rectangular frame 17 and the fixed electrode 4 and the inertial mass 22, respectively, does not change. The voltages generated in the pairs of capacitive displacement transducers formed by planar fixed electrodes 2, 3 and a rectangular frame 17 and a fixed electrode 4 and inertial mass 22, respectively, are the same.

When acceleration of the semiconductor substrate 1 occurs along the X axis located in the plane of the semiconductor substrate 1, the inertial mass 22, rigidly attached to the rectangular frame 17 using elastic beams 23, 24, 25, 26, begins to move along the X axis in the plane under the action of inertia forces semiconductor substrate 1 due to the s-shaped bending of the elastic beams 18, 19, 20, 21, which at one end are rigidly connected to the rectangular frame 17, and the other to the movable electrodes 7, 8, respectively. The voltage difference generated in the pairs of capacitive displacement transducers formed by electrodes 2, 3 and a rectangular frame 17, respectively, due to a change in the gap between them, characterizes the magnitude of the acceleration.

When acceleration of the semiconductor substrate 1 occurs along the Y axis located in the plane of the semiconductor substrate 1, the inertial mass 22 begins to move along the Y axis in the plane of the semiconductor substrate 1 due to the s-shaped bending of the elastic beams 9, 10, 11, 12, which one ends are rigidly connected to the movable electrodes 7, 8, and the other to the supports 13, 14, 15, 16, respectively. The voltage difference generated in the pairs of capacitive displacement transducers formed by the stationary electrodes 5, 6 and the movable electrodes 7, 8, respectively, due to a change in the gap between them, characterizes the magnitude of the acceleration.

When acceleration of the semiconductor substrate 1 occurs along the Z axis directed perpendicular to the plane of the semiconductor substrate 1, the inertial mass 22 begins to move perpendicular to the plane of the semiconductor substrate 1 due to the s-shaped bending of the elastic beams 23, 24, 25, 26 under the action of inertia forces. Stresses generated on capacitive displacement transducers formed by a fixed electrode 4 and an inertial mass 22 due to a change in the gap between them, characterize the magnitude of the acceleration.

Thus, the proposed device is an integrated micromechanical gyroscope-accelerometer, which allows you to measure the angular velocity and acceleration along the X, Y axes located in the plane of the substrate, and the Z axis directed perpendicular to the plane of the substrate of the gyroscope-accelerometer.

The introduction of two movable electrodes made of semiconductor material in the form of plates with comb structures on one side and located with a gap relative to the semiconductor substrate, an additional stationary electrode made of semiconductor material and located directly on the substrate, four additional elastic beams made of semiconductor material and located with a gap relative to the semiconductor substrate, and planar stationary electrodes in the image T flat capacitors in the plane of their plates through the lateral gaps with a rectangular frame, allows you to measure the angular velocity and acceleration along the X, Y axes located in the plane of the substrate, and the Z axis directed perpendicular to the plane of the substrate of the gyroscope-accelerometer, which allows the use of the invention in as an integral measuring element of angular velocity and acceleration.

Thus, in comparison with similar devices, the proposed integrated micromechanical gyroscope-accelerometer allows to reduce the substrate area used for the placement of measuring elements of angular velocity and acceleration, since only one is used to measure angular velocity and acceleration along three axes X, Y, Z Integrated micromechanical gyroscope-accelerometer.

Claims (1)

An integrated micromechanical gyroscope-accelerometer containing a semiconductor substrate with planar stationary electrodes located on it made of a semiconductor material, two stationary electrodes with comb structures on one side made of a semiconductor material and located directly on the semiconductor substrate, four supports made of a semiconductor material and located directly on the semiconductor substrate, a rectangular frame made of semiconductor material connected to the supports using four elastic beams made of semiconductor material and located with a gap relative to the substrate, inertial mass made of semiconductor material and located with a gap relative to the substrate, the other four elastic beams made of semiconductor material and located with a gap relative to the substrate, characterized in that two movable electrodes made of semiconductor material in the form of plates are inserted into it with comb structures on one side and positioned with a gap relative to the semiconductor substrate, an additional stationary electrode made of a semiconductor material and located directly on the substrate, four additional elastic beams made of semiconductor material and located with a gap relative to the semiconductor substrate, and the planar stationary electrodes form flat capacitors in the plane of their plates through lateral gaps with a rectangular frame.

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