RU2224331C2 - Photodetector ( variants ) - Google Patents

Photodetector ( variants ) Download PDF

Info

Publication number
RU2224331C2
RU2224331C2 RU2001131679/28A RU2001131679A RU2224331C2 RU 2224331 C2 RU2224331 C2 RU 2224331C2 RU 2001131679/28 A RU2001131679/28 A RU 2001131679/28A RU 2001131679 A RU2001131679 A RU 2001131679A RU 2224331 C2 RU2224331 C2 RU 2224331C2
Authority
RU
Russia
Prior art keywords
photodetector
working
working area
optical thickness
wave
Prior art date
Application number
RU2001131679/28A
Other languages
Russian (ru)
Other versions
RU2001131679A (en
Inventor
Н.П. Шестаков
А.А. Иваненко
А.М. Сысоев
Original Assignee
Институт физики им. Л.В.Киренского СО РАН
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт физики им. Л.В.Киренского СО РАН filed Critical Институт физики им. Л.В.Киренского СО РАН
Priority to RU2001131679/28A priority Critical patent/RU2224331C2/en
Publication of RU2001131679A publication Critical patent/RU2001131679A/en
Application granted granted Critical
Publication of RU2224331C2 publication Critical patent/RU2224331C2/en

Links

Images

Landscapes

  • Holo Graphy (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

FIELD: optoelectronics, holography, interferometry, Fourier spectroscopy. SUBSTANCE: invention deals with electronic measurement of spatial-time distribution of amplitudes and phases of light waves. Photodetector incorporates photoelectric layer, substrate and feeding electrodes and is made of elements which have total transmission over 10% in limits of working area of photodetector and summary deviation from uniform change of optical thickness over working area and over working length of photodetector under λmin/4. Photoelectric layer has optical thickness within limits of working area less than λmin/2, or above λ0/2 and not multiple of λ0/2 where λmin is length of wave of short-wave boundary of working spectral range of photodetector; λ0 is working length of wave of photodetector. EFFECT: simplified optical circuit, reduced dimensions of optical devices. 2 cl, 7 dwg

Description

Текст описания в факсимильном виде (см. графическую часть)и Description text in facsimile form (see graphic part) and

Claims (2)

1. Фотоприемник, содержащий тонкопленочный фотоэлектрический слой, подложку и подводящие электроды, отличающийся тем, что состоит из элементов, которые в пределах рабочей площади фотоприемника имеют суммарное пропускание больше 10% и суммарное отклонение от равномерного изменения оптической толщины по рабочей площади и по рабочей длине фотоприемника меньше λmin/4, а фотоэлектрический слой в пределах рабочей площади фотоприемника имеет оптическую толщину меньше λmin/2, где λmin - длина волны коротковолновой границы рабочего спектрального диапазона фотоприемника.1. A photodetector containing a thin film photoelectric layer, a substrate and supply electrodes, characterized in that it consists of elements that within the working area of the photodetector have a total transmittance of more than 10% and the total deviation from a uniform change in optical thickness along the working area and the working length of the photodetector less than λ min / 4, and the photoelectric layer within the working area of the photodetector has an optical thickness less than λ min / 2, where λ min is the wavelength of the short-wavelength boundary of the working spectral range of the photodetector. 2. Фотоприемник, содержащий тонкопленочный фотоэлектрический слой, подложку и подводящие электроды, отличающийся тем, что состоит из элементов, которые в пределах рабочей площади фотоприемника имеют суммарное пропускание больше 10% и суммарное отклонение от равномерного изменения оптической толщины по рабочей площади и по рабочей длине фотоприемника меньше λ0/4, а фотоэлектрический слой в пределах рабочей площади фотоприемника имеет оптическую толщину больше λ0/2 и не кратную λ0/2, где λ0 - рабочая длина волны фотоприемника.2. A photodetector containing a thin film photoelectric layer, a substrate and supply electrodes, characterized in that it consists of elements that within the working area of the photodetector have a total transmittance of more than 10% and the total deviation from a uniform change in optical thickness along the working area and the working length of the photodetector less than λ 0/4, and a photovoltaic layer within the working area of the photodetector has an optical thickness of more than λ 0/2 and is not a multiple of λ 0/2, where λ 0 - working length photodetector wave.
RU2001131679/28A 2001-11-23 2001-11-23 Photodetector ( variants ) RU2224331C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2001131679/28A RU2224331C2 (en) 2001-11-23 2001-11-23 Photodetector ( variants )

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2001131679/28A RU2224331C2 (en) 2001-11-23 2001-11-23 Photodetector ( variants )

Publications (2)

Publication Number Publication Date
RU2001131679A RU2001131679A (en) 2003-08-27
RU2224331C2 true RU2224331C2 (en) 2004-02-20

Family

ID=32172159

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2001131679/28A RU2224331C2 (en) 2001-11-23 2001-11-23 Photodetector ( variants )

Country Status (1)

Country Link
RU (1) RU2224331C2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101169452B1 (en) * 2008-04-25 2012-07-27 가부시키가이샤 아루박 Solar cell

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250120A (en) * 1990-12-07 1993-10-05 Kanegafuchi Chemical Industry Co., Ltd. Photovoltaic device
US5419783A (en) * 1992-03-26 1995-05-30 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method therefor
RU2150159C1 (en) * 1999-02-15 2000-05-27 Физико-технический институт им. А.Ф. Иоффе РАН Photodetector
EP1073125A2 (en) * 1999-07-28 2001-01-31 STMicroelectronics S.r.l. Integrated semiconductor optic sensor device and corresponding manufacturing process
US6352777B1 (en) * 1998-08-19 2002-03-05 The Trustees Of Princeton University Organic photosensitive optoelectronic devices with transparent electrodes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250120A (en) * 1990-12-07 1993-10-05 Kanegafuchi Chemical Industry Co., Ltd. Photovoltaic device
US5419783A (en) * 1992-03-26 1995-05-30 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method therefor
US6352777B1 (en) * 1998-08-19 2002-03-05 The Trustees Of Princeton University Organic photosensitive optoelectronic devices with transparent electrodes
RU2150159C1 (en) * 1999-02-15 2000-05-27 Физико-технический институт им. А.Ф. Иоффе РАН Photodetector
EP1073125A2 (en) * 1999-07-28 2001-01-31 STMicroelectronics S.r.l. Integrated semiconductor optic sensor device and corresponding manufacturing process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
КАЛИТЕЕВСКИЙ Н.И. Волновая оптика. - М.: Высшая школа, 1995, с.219. *

Similar Documents

Publication Publication Date Title
Perney et al. Tuning localized plasmon cavities for optimized surface-enhanced Raman scattering
JP4146520B2 (en) Optical integrated circuit
DK0721112T3 (en) Multi-layer anti-reflective coating with a graduated base layer
ATE324600T1 (en) ANTI-REFLECTION COATINGS AND RELATED METHODS
EP1043779A3 (en) Thin film solar battery and method of manufacturing the same
DE69815121D1 (en) OPTICAL SUBSTRATE FOR IMPROVED FLUORESCENCE DETECTION
NO923989L (en) INTEGRATED OPTICAL CIRCUIT
KR900019187A (en) Method and apparatus for optical monitoring of material growth and etch rate
IL125964A (en) Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
CA2328789A1 (en) Multifunction integrated optics chip having improved polarization extinction ratio
WO2002077700A3 (en) Controlling passive facet reflections
EP1500957A4 (en) LAMINATE WAVE LENGTH PLATE AND OPTICAL READING DEVICE USING THE SAME
CA2328785A1 (en) Lateral trenching for cross coupling suppression in integrated optics chips
WO2005020294A3 (en) “control of etch and deposition processes”
RU2224331C2 (en) Photodetector ( variants )
TW200503282A (en) Semiconductor alignment aid
ATE268511T1 (en) OPTICAL FIBERS AND PRODUCTION PROCESS
CA2471004A1 (en) Optical filters for manipulating spectral power distribution in accelerated weathering devices
JP6582821B2 (en) Optical waveguide device
FR2635877A1 (en) WAVEGUIDE / DETECTOR COMBINATION
RU2001131679A (en) Photodetector (options)
ATE465433T1 (en) DIRECT VIEW DISPLAY BASED ON LIGHT DIFFRACTION FROM A DEFORMABLE LAYER
FR3102565B1 (en) Optical device with surface texturing
WO2005015312A3 (en) Method for determining optimal resist thickness
AU2002315250A1 (en) Awg-coupler for separating electromagnetic rays with different wave ranges in addition to a communication technology system

Legal Events

Date Code Title Description
MM4A The patent is invalid due to non-payment of fees

Effective date: 20111124