RU2017146546A - TWO-CHANNEL MATRIX INFRARED RECEIVER OF RADIATION TYPE - Google Patents

TWO-CHANNEL MATRIX INFRARED RECEIVER OF RADIATION TYPE Download PDF

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Publication number
RU2017146546A
RU2017146546A RU2017146546A RU2017146546A RU2017146546A RU 2017146546 A RU2017146546 A RU 2017146546A RU 2017146546 A RU2017146546 A RU 2017146546A RU 2017146546 A RU2017146546 A RU 2017146546A RU 2017146546 A RU2017146546 A RU 2017146546A
Authority
RU
Russia
Prior art keywords
photovoltaic cells
truncated pyramid
channel matrix
infrared receiver
radiation type
Prior art date
Application number
RU2017146546A
Other languages
Russian (ru)
Other versions
RU2692934C2 (en
RU2017146546A3 (en
Inventor
Вадим Борисович Кулагов
Original Assignee
Акционерное общество "Научно-исследовательский институт "Гириконд"
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Application filed by Акционерное общество "Научно-исследовательский институт "Гириконд" filed Critical Акционерное общество "Научно-исследовательский институт "Гириконд"
Priority to RU2017146546A priority Critical patent/RU2692934C2/en
Publication of RU2017146546A publication Critical patent/RU2017146546A/en
Application granted granted Critical
Publication of RU2692934C2 publication Critical patent/RU2692934C2/en
Publication of RU2017146546A3 publication Critical patent/RU2017146546A3/ru

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)

Claims (1)

Двухспектральный инфракрасный приемник излучения, содержащий тонкопленочную матричную структуру планарных фотогальванических элементов на основе селенида свинца, снабженных оптическими фильтрами и расположенных вокруг единой оси по окружности с чередованием фотогальванических элементов двух разных каналов спектральной чувствительности, отличающийся тем, что фотогальванические элементы, в четном количестве, не менее 12, выполненные на отдельных подложках в виде прямоугольников и равнобедренных треугольников, скомпонованы в объемную матричную структуру, размещенную на конструкционной основе, имеющей форму правильной усеченной пирамиды, при этом фотогальванические элементы, выполненные в виде прямоугольников, размещены на боковых гранях правильной усеченной пирамиды, а фотогальванические элементы, выполненные в виде равнобедренных треугольников, размещены на верхнем основании правильной усеченной пирамиды.Two-spectral infrared radiation receiver containing a thin-film matrix structure of planar photovoltaic cells based on lead selenide, equipped with optical filters and located around a single axis along a circle with alternating photovoltaic cells of two different spectral sensitivity channels, characterized in that the photovoltaic elements are in even numbers not less than 12, made on separate substrates in the form of rectangles and isosceles triangles, arranged in volume A matrix structure placed on a structural basis, having the shape of a regular truncated pyramid, with photovoltaic cells made in the form of rectangles placed on the side faces of a regular truncated pyramid, and photovoltaic cells made in the form of isosceles triangles are placed on the upper base of a regular truncated pyramid .
RU2017146546A 2017-12-27 2017-12-27 Two-channel matrix infrared receiver of facetted type radiation RU2692934C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2017146546A RU2692934C2 (en) 2017-12-27 2017-12-27 Two-channel matrix infrared receiver of facetted type radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2017146546A RU2692934C2 (en) 2017-12-27 2017-12-27 Two-channel matrix infrared receiver of facetted type radiation

Publications (3)

Publication Number Publication Date
RU2017146546A true RU2017146546A (en) 2019-06-27
RU2692934C2 RU2692934C2 (en) 2019-06-28
RU2017146546A3 RU2017146546A3 (en) 2019-07-17

Family

ID=67002635

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2017146546A RU2692934C2 (en) 2017-12-27 2017-12-27 Two-channel matrix infrared receiver of facetted type radiation

Country Status (1)

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RU (1) RU2692934C2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020001322A1 (en) 2020-02-28 2021-09-02 SDT Industrial Technology UG (haftungsbeschränkt) The optoelectronic multi-module station for air monitoring

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714773A (en) * 1996-10-15 1998-02-03 Lucent Technologies Inc. Photodiode array for remotely powered lightwave networks
RU135185U1 (en) * 2013-09-09 2013-11-27 ООО "Производственно-технологический центр "УралАлмазИнвест" TWO SPECTRUM PHOTO RECEIVER
RU2634805C2 (en) * 2016-03-14 2017-11-03 Акционерное общество "Научно-исследовательский институт "Гириконд" Dual-spectrum matrix infrared radiation array detector for optoelectronic sensors
RU2016109083A (en) * 2016-03-14 2017-09-19 Акционерное общество "Научно-исследовательский институт "Гириконд" TWO-SPECTRAL MATRIX INFRARED MATRIX RECEIVER OF OPTOELECTRONIC SENSORS

Also Published As

Publication number Publication date
RU2692934C2 (en) 2019-06-28
RU2017146546A3 (en) 2019-07-17

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