RU2015135730A - METHOD FOR DETECTING STRUCTURAL DEFECTS IN CRYSTAL MATERIALS - Google Patents

METHOD FOR DETECTING STRUCTURAL DEFECTS IN CRYSTAL MATERIALS Download PDF

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Publication number
RU2015135730A
RU2015135730A RU2015135730A RU2015135730A RU2015135730A RU 2015135730 A RU2015135730 A RU 2015135730A RU 2015135730 A RU2015135730 A RU 2015135730A RU 2015135730 A RU2015135730 A RU 2015135730A RU 2015135730 A RU2015135730 A RU 2015135730A
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RU
Russia
Prior art keywords
sample
structural defects
illuminated
light
crystal materials
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Application number
RU2015135730A
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Russian (ru)
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RU2615351C2 (en
Inventor
Александр Михайлович Григорьев
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Александр Михайлович Григорьев
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Priority to RU2015135730A priority Critical patent/RU2615351C2/en
Publication of RU2015135730A publication Critical patent/RU2015135730A/en
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Publication of RU2615351C2 publication Critical patent/RU2615351C2/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Claims (2)

1. Способ обнаружения структурных дефектов в кристаллических материалах, заключающийся в том, что из кристаллического материала изготавливают образец, освещают образец светом и формируют изображение структурных дефектов оптическими методами в прошедшем, и/или отраженном, и/или рассеянном свете, отличающийся тем, что образец освещают светом, состоящим из фотонов с энергиями, лежащими в пределах от 0,9 до 1,0 значения энергии равной величине запрещенной зоны однородного кристаллического материала образца при температуре образца и внешних физических воздействиях на образец, имеющих место во время формирования изображения структурных дефектов.1. A method for detecting structural defects in crystalline materials, which consists in the fact that a sample is made from a crystalline material, the sample is illuminated with light, and the image of structural defects is formed by optical methods in transmitted and / or reflected and / or scattered light, characterized in that the sample illuminated with light consisting of photons with energies ranging from 0.9 to 1.0 energy values equal to the band gap of the homogeneous crystalline material of the sample at the temperature of the sample and external physical influences on the sample occurring during the image formation of structural defects. 2. Способ по п. 1, отличающийся тем, что образец кристаллического материала освещают монохроматическим светом.2. The method according to p. 1, characterized in that the sample of crystalline material is illuminated with monochromatic light.
RU2015135730A 2015-08-24 2015-08-24 Method for detecting structural defects in crystalline materials RU2615351C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2015135730A RU2615351C2 (en) 2015-08-24 2015-08-24 Method for detecting structural defects in crystalline materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2015135730A RU2615351C2 (en) 2015-08-24 2015-08-24 Method for detecting structural defects in crystalline materials

Publications (2)

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RU2015135730A true RU2015135730A (en) 2017-03-02
RU2615351C2 RU2615351C2 (en) 2017-04-04

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RU2015135730A RU2615351C2 (en) 2015-08-24 2015-08-24 Method for detecting structural defects in crystalline materials

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RU (1) RU2615351C2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116577340A (en) * 2023-05-28 2023-08-11 兰州大学 Method for distinguishing threading screw dislocation and threading edge dislocation in silicon carbide

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2694790C1 (en) * 2018-12-26 2019-07-16 Российская Федерация в лице Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" Method of determining homogeneity of uniaxial crystals

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2009573C1 (en) * 1991-04-22 1994-03-15 Научно-исследовательский институт молекулярной электроники Method of silicon monocrystalline plates applicability determining for semiconductors manufacturing
JP3536203B2 (en) * 1999-06-09 2004-06-07 東芝セラミックス株式会社 Method and apparatus for measuring crystal defects in wafer
US7864334B2 (en) * 2008-06-03 2011-01-04 Jzw Llc Interferometric defect detection
US8605276B2 (en) * 2011-11-01 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced defect scanning
RU2486630C1 (en) * 2012-02-14 2013-06-27 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Method to detect structural defects in silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116577340A (en) * 2023-05-28 2023-08-11 兰州大学 Method for distinguishing threading screw dislocation and threading edge dislocation in silicon carbide
CN116577340B (en) * 2023-05-28 2024-01-05 兰州大学 Method for distinguishing threading screw dislocation and threading edge dislocation in silicon carbide

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Publication number Publication date
RU2615351C2 (en) 2017-04-04

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Effective date: 20180825