RU2015116223A - METHOD FOR CHANGING SEMICONDUCTOR STRUCTURE PARAMETERS USING THE INFLUENCE OF AN ADDITIONAL ELECTRIC FIELD - Google Patents

METHOD FOR CHANGING SEMICONDUCTOR STRUCTURE PARAMETERS USING THE INFLUENCE OF AN ADDITIONAL ELECTRIC FIELD Download PDF

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RU2015116223A
RU2015116223A RU2015116223A RU2015116223A RU2015116223A RU 2015116223 A RU2015116223 A RU 2015116223A RU 2015116223 A RU2015116223 A RU 2015116223A RU 2015116223 A RU2015116223 A RU 2015116223A RU 2015116223 A RU2015116223 A RU 2015116223A
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Russia
Prior art keywords
semiconductor structure
electric field
given
additional electric
influence
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RU2015116223A
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Russian (ru)
Inventor
Андрей Васильевич Федьковский
Наталья Юрьевна Федьковская
Ксения Андреевна Федьковская
Вячеслав Андреевич Федьковский
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Андрей Васильевич Федьковский
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Application filed by Андрей Васильевич Федьковский filed Critical Андрей Васильевич Федьковский
Priority to RU2015116223A priority Critical patent/RU2015116223A/en
Publication of RU2015116223A publication Critical patent/RU2015116223A/en

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Abstract

Предлагаемый способ отличается от известных тем, что на полупроводниковую структуру в заданном сечении в заданный момент времени под заданным углом воздействует дополнительное электрическое поле заданной величины, которое в результате взаимодействия с электрическим полем полупроводниковой структуры позволяет изменять характеристики полупроводниковой структуры в заданный момент времени.The proposed method differs from the known ones in that the semiconductor structure in a given section at a given moment in time at a given angle is affected by an additional electric field of a given magnitude, which, as a result of interaction with the electric field of a semiconductor structure, allows you to change the characteristics of the semiconductor structure at a given moment in time.

Claims (1)

Предлагаемый способ отличается от известных тем, что на полупроводниковую структуру в заданном сечении в заданный момент времени под заданным углом воздействует дополнительное электрическое поле заданной величины, которое в результате взаимодействия с электрическим полем полупроводниковой структуры позволяет изменять характеристики полупроводниковой структуры в заданный момент времени. The proposed method differs from the known ones in that the semiconductor structure in a given section at a given moment in time at a given angle is affected by an additional electric field of a given magnitude, which, as a result of interaction with the electric field of a semiconductor structure, allows you to change the characteristics of the semiconductor structure at a given moment in time.
RU2015116223A 2015-04-28 2015-04-28 METHOD FOR CHANGING SEMICONDUCTOR STRUCTURE PARAMETERS USING THE INFLUENCE OF AN ADDITIONAL ELECTRIC FIELD RU2015116223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2015116223A RU2015116223A (en) 2015-04-28 2015-04-28 METHOD FOR CHANGING SEMICONDUCTOR STRUCTURE PARAMETERS USING THE INFLUENCE OF AN ADDITIONAL ELECTRIC FIELD

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Application Number Priority Date Filing Date Title
RU2015116223A RU2015116223A (en) 2015-04-28 2015-04-28 METHOD FOR CHANGING SEMICONDUCTOR STRUCTURE PARAMETERS USING THE INFLUENCE OF AN ADDITIONAL ELECTRIC FIELD

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RU2015116223A true RU2015116223A (en) 2016-11-20

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RU2015116223A RU2015116223A (en) 2015-04-28 2015-04-28 METHOD FOR CHANGING SEMICONDUCTOR STRUCTURE PARAMETERS USING THE INFLUENCE OF AN ADDITIONAL ELECTRIC FIELD

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Effective date: 20180430