RU2013135893A - INJECTION LASER - Google Patents

Abstract

1. An injection laser comprising a semiconductor heterostructure containing a waveguide layer enclosed between the upper and lower wide-band emitters, respectively, of p- and n-type conductivity, which are simultaneously boundary layers, with an active region consisting of at least one quantum-dimensional active layer, an optical Fabry-Perot resonator and a strip ohmic contact, under which the injection region is located, and in the upper p-type emitter in the ohmic contact region, mesak lengths equal to or shorter than the width of the ohmic contact and equidistantly located with a period determined from the relations: where: Λ is the period of the mesan grooves, μm; m is a positive integer; λ is the laser wavelength, μm; n is the effective refractive index waveguide layer; L is the length of the Fabry-Perot optical resonator, μm; in this case, the meso-grooves in the cross section are made in the form of a wedge, one of whose faces is perpendicular to the axis of the Fabry-Perot optical resonator, and the second face is tilted outward at an angle of 25-60 ° the plane of the first face mezakanavki.2. The laser according to claim 1, characterized in that the mesa grooves are made of chemical etching. The laser according to claim 1, characterized in that the mezzanines are made by reactive ion etching. The laser according to claim 1, characterized in that the semiconductor heterostructure is made in the AB solid solution system.

Claims (4)

1. An injection laser comprising a semiconductor heterostructure containing a waveguide layer enclosed between the upper and lower wide-band emitters, respectively, of p- and n-type conductivity, which are simultaneously boundary layers, with an active region consisting of at least one quantum-dimensional active layer, an optical Fabry-Perot resonator and a strip ohmic contact, under which the injection region is located, and in the upper p-type emitter in the ohmic contact region, mesak Navki length equal to or less than the width of the ohmic contact, and equidistantly arranged with the period determined from the relations: $$\Lambda =\frac{m\lambda }{2n},\text{microns;}$$

$$\frac{\lambda }{2n}\le \Lambda \le 0,8\cdot {10}^{-2}\cdot L\text{μm};$$

where: Λ is the period of the location of the mesanas, microns; m is a positive integer; λ is the wavelength of the laser radiation, microns; n is the effective refractive index of the waveguide layer; L is the length of the Fabry-Perot optical resonator, microns; at the same time, the meso-grooves in the cross section are made in the form of a wedge, one of the faces of which is perpendicular to the axis of the Fabry-Perot optical resonator, and the second face is tilted outward at an angle of 25-60 ° to the plane of the first face of the meso-groove. 2. The laser according to claim 1, characterized in that the mezzanines are made of chemical etching. 3. The laser according to claim 1, characterized in that the mezzanines are made by reactive ion etching. 4. The laser according to claim 1, characterized in that the semiconductor heterostructure is made in the system of solid solutions A ³ B ⁵ .