RU2012125233A - METHOD FOR CONTROL OF ENAMEL INSULATION OF WIRES - Google Patents

Abstract

A method for controlling enamel insulation, which consists in pulling a wire through a point damage sensor, a speed sensor and a defect pulse generator, characterized in that periodically changing EMF is induced in the controlled wire using an inductor, the period of which changes in direct proportion to the speed of the wire, and the measurements are calibrated, why why a section of wire of a strictly fixed length l is pulled through a speed sensor and the number of periods n of the induced emf is calculated, for the passage of the aforementioned section through the speed sensor, and the elementary length of the wire is determined from the measurements, l the formulas take the value of l per unit of length calculation, then the systematic error introduced into the measurement of the length of the defective section of the wire insulation with the final dimensions of the point damage sensor is applied, for which two defect on enamel insulation of wires with clearly fixed lengths land l at a distance from each other exceeding the length contact of the point damage sensor with the surface of the wire being monitored and stretch said wire section with two defects applied to it through the point damage sensor, and for each defective section, record the number of n and n periods induced in the EMF wire during the passage of the said defective sections through the point damage sensor, and the results of these measurements determine the systematic error Δl by the formula, where is the number of false pulses of the length of the defect due to

Claims (1)

A method for controlling enamel insulation, which consists in pulling a wire through a point damage sensor, a speed sensor and a defect pulse generator, characterized in that periodically changing EMF is induced in the controlled wire using an inductor, the period of which changes in direct proportion to the speed of the wire, and the measurements are calibrated, for which for which the speed sensor is pulled via the wire portion strictly fixed length l _p and the number of periods n of the induced EMF, z the passage of said portion through a speed sensor, and determining from the measurements elemental wire length l _e of the formula $$l_{\mathrm{uh}}=\frac{l_f}{n}$$

and take the value of l _e for the unit of calculation of the length, then determine the systematic error introduced into the measurement of the length of the defective section of the wire insulation by the final dimensions of the point damage sensor, for which two defects are artificially applied to the wire enamel with clearly fixed lengths l ₁ and l ₂ at a distance from each other, exceeding the length of the contact of the sensor of point damage with the surface of the wire being monitored and stretching said portion of the wire with applied to of the two point defect through the sensor damage, the defective portion for each record the number n ₁ and n ₂ periods of induced emf in the wire during passage of said defective portions through the sensor point damage, and the results of these measurements determine the systematic bias by the formula Δl $$\Delta l=\Delta l=l_{\mathrm{uh}}m=l_{\mathrm{uh}}\frac{n_{\mathrm{one}}N-n_2}{N-\mathrm{one}}$$

where $$m=\frac{n_{\mathrm{one}}N-n_2}{N-\mathrm{one}}$$

- the number of false impulses of the extent of the defect due to the size of the point damage sensor, $$N=\frac{l_2}{l_{\mathrm{one}}}$$

then, after determining the elementary length of the wire l _e that passed through the point damage sensor for one period T _{e of the} induced emf and determining the systematic error in determining the extent of defects, the wire enamel is defective, for which it is pulled through the point damage sensor and the speed sensor, and When each of the defective sections of the wire insulation passes through the point damage sensor, a defect pulse is formed, the duration of which T _i equals the transit time said defect through a point damage sensor, count the number of defect pulses K, record the number n _{i of} induced EMF periods for each defect pulse T _i , and determine the true extent of each defect by the formula l _i = (n _i -m) l _e , determine the total length l _{sum of} all defects on the controlled wire defects according to the expression $$l_{\mathrm{from}\mathrm{at}m}={\displaystyle \sum _{i=\mathrm{one}}^K{n}_i{l}_{\mathrm{uh}}}-K{l}_{\mathrm{uh}}\frac{n_{\mathrm{one}}N-n_2}{N-\mathrm{one}}$$

, record the number of n _pr periods of induced EMF during the wire monitoring time and determine the length l _{pr of the} tested wire according to the formula l _pr = n _pr l _e and the quality of enamel insulation of the wire is estimated by the number of defects K ₁ per unit length of the tested wire $$K_{\mathrm{one}}=\frac{K}{l_{PR}}$$

and according to the average length of K ₂ defects per unit length of the tested wire $$K_2=\frac{l_{\mathrm{from}\mathrm{at}m}}{l_{PR}}$$

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