RU2010131763A - METHOD FOR PRODUCING DIAMOND STRUCTURE WITH NITROGEN-VACANCY DEFECTS - Google Patents
METHOD FOR PRODUCING DIAMOND STRUCTURE WITH NITROGEN-VACANCY DEFECTS Download PDFInfo
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- RU2010131763A RU2010131763A RU2010131763/05A RU2010131763A RU2010131763A RU 2010131763 A RU2010131763 A RU 2010131763A RU 2010131763/05 A RU2010131763/05 A RU 2010131763/05A RU 2010131763 A RU2010131763 A RU 2010131763A RU 2010131763 A RU2010131763 A RU 2010131763A
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Abstract
1. Способ получения алмазной структуры с азотно-вакансионными дефектами, включающий воздействие на очищенные детонационные наноалмазы физическим фактором, отличающийся тем, что очищенные детонационные наноалмазы спекают в камере при давлении 5-7 ГПа и температуре 750-1200°С в течение времени от нескольких секунд до нескольких минут, воздействуют на полученный порошок алмазных агрегатов излучением лазера с длиной волны менее 637 нм и отбирают алмазные агрегаты с высокой концентрацией NV дефектов по яркой характерной люминесценции в красной области спектра. ! 2. Способ по п.1, отличающийся тем, что концентрацию NV дефектов в алмазных агрегатах определяют по интенсивности сигналов электронного парамагнитного резонанса. 1. A method of obtaining a diamond structure with nitrogen-vacancy defects, including exposure to purified detonation nanodiamonds by a physical factor, characterized in that the purified detonation nanodiamonds are sintered in the chamber at a pressure of 5-7 GPa and a temperature of 750-1200 ° C for a period of several seconds up to several minutes, they act on the obtained powder of diamond aggregates by laser radiation with a wavelength of less than 637 nm and select diamond aggregates with a high concentration of NV defects by the bright characteristic luminescence in red domain of the spectrum. ! 2. The method according to claim 1, characterized in that the concentration of NV defects in diamond aggregates is determined by the intensity of the signals of electron paramagnetic resonance.
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RU2010131763/05A RU2448900C2 (en) | 2010-07-28 | 2010-07-28 | Method of producing diamond structure with nitrogen-vacancy defects |
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RU2010131763/05A RU2448900C2 (en) | 2010-07-28 | 2010-07-28 | Method of producing diamond structure with nitrogen-vacancy defects |
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RU2010131763A true RU2010131763A (en) | 2012-02-10 |
RU2448900C2 RU2448900C2 (en) | 2012-04-27 |
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RU2010131763/05A RU2448900C2 (en) | 2010-07-28 | 2010-07-28 | Method of producing diamond structure with nitrogen-vacancy defects |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115201241A (en) * | 2022-07-18 | 2022-10-18 | 吉林大学 | SnBi regulated and controlled by high-voltage technology 2 Te 4 Method for detecting Sn atom defect |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2543184C2 (en) * | 2013-04-01 | 2015-02-27 | ЗАО "Алмазный Центр" | Synthetic radioactive nanodiamond and method for production thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0275063A3 (en) * | 1987-01-12 | 1992-05-27 | Sumitomo Electric Industries Limited | Light emitting element comprising diamond and method for producing the same |
JP2571795B2 (en) * | 1987-11-17 | 1997-01-16 | 住友電気工業株式会社 | Purple diamond and method for producing the same |
RU2215285C1 (en) * | 2002-03-13 | 2003-10-27 | Институт геологии Коми научного центра Уральского отделения РАН | X-ray/luminescent method determining concentration of nitrogen defects in diamonds |
AU2003259418A1 (en) * | 2002-09-06 | 2004-03-29 | Element Six Limited | Coloured diamond |
RU2237113C1 (en) * | 2003-06-26 | 2004-09-27 | Винс Виктор Генрихович | Method of manufacturing diamonds in fantasy red color |
EP1990313A1 (en) * | 2007-05-10 | 2008-11-12 | INSERM (Institut National de la Santé et de la Recherche Médicale) | Method to produce light-emitting nano-particles of diamond |
US20100104494A1 (en) * | 2008-10-24 | 2010-04-29 | Meng Yu-Fei | Enhanced Optical Properties of Chemical Vapor Deposited Single Crystal Diamond by Low-Pressure/High-Temperature Annealing |
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- 2010-07-28 RU RU2010131763/05A patent/RU2448900C2/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115201241A (en) * | 2022-07-18 | 2022-10-18 | 吉林大学 | SnBi regulated and controlled by high-voltage technology 2 Te 4 Method for detecting Sn atom defect |
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RU2448900C2 (en) | 2012-04-27 |
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