RU2010131763A - METHOD FOR PRODUCING DIAMOND STRUCTURE WITH NITROGEN-VACANCY DEFECTS - Google Patents

METHOD FOR PRODUCING DIAMOND STRUCTURE WITH NITROGEN-VACANCY DEFECTS Download PDF

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Publication number
RU2010131763A
RU2010131763A RU2010131763/05A RU2010131763A RU2010131763A RU 2010131763 A RU2010131763 A RU 2010131763A RU 2010131763/05 A RU2010131763/05 A RU 2010131763/05A RU 2010131763 A RU2010131763 A RU 2010131763A RU 2010131763 A RU2010131763 A RU 2010131763A
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Russia
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defects
diamond
nitrogen
purified
aggregates
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RU2010131763/05A
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Russian (ru)
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RU2448900C2 (en
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Павел Георгиевич Баранов (RU)
Павел Георгиевич Баранов
Александр Яковлевич Вуль (RU)
Александр Яковлевич Вуль
Сергей Викторович Кидалов (RU)
Сергей Викторович Кидалов
Александра Андреевна Солтамова (RU)
Александра Андреевна Солтамова
Федор Михайлович Шахов (RU)
Федор Михайлович Шахов
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Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН (RU)
Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН
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Application filed by Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН (RU), Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН filed Critical Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН (RU)
Priority to RU2010131763/05A priority Critical patent/RU2448900C2/en
Publication of RU2010131763A publication Critical patent/RU2010131763A/en
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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1. Способ получения алмазной структуры с азотно-вакансионными дефектами, включающий воздействие на очищенные детонационные наноалмазы физическим фактором, отличающийся тем, что очищенные детонационные наноалмазы спекают в камере при давлении 5-7 ГПа и температуре 750-1200°С в течение времени от нескольких секунд до нескольких минут, воздействуют на полученный порошок алмазных агрегатов излучением лазера с длиной волны менее 637 нм и отбирают алмазные агрегаты с высокой концентрацией NV дефектов по яркой характерной люминесценции в красной области спектра. ! 2. Способ по п.1, отличающийся тем, что концентрацию NV дефектов в алмазных агрегатах определяют по интенсивности сигналов электронного парамагнитного резонанса. 1. A method of obtaining a diamond structure with nitrogen-vacancy defects, including exposure to purified detonation nanodiamonds by a physical factor, characterized in that the purified detonation nanodiamonds are sintered in the chamber at a pressure of 5-7 GPa and a temperature of 750-1200 ° C for a period of several seconds up to several minutes, they act on the obtained powder of diamond aggregates by laser radiation with a wavelength of less than 637 nm and select diamond aggregates with a high concentration of NV defects by the bright characteristic luminescence in red domain of the spectrum. ! 2. The method according to claim 1, characterized in that the concentration of NV defects in diamond aggregates is determined by the intensity of the signals of electron paramagnetic resonance.

Claims (2)

1. Способ получения алмазной структуры с азотно-вакансионными дефектами, включающий воздействие на очищенные детонационные наноалмазы физическим фактором, отличающийся тем, что очищенные детонационные наноалмазы спекают в камере при давлении 5-7 ГПа и температуре 750-1200°С в течение времени от нескольких секунд до нескольких минут, воздействуют на полученный порошок алмазных агрегатов излучением лазера с длиной волны менее 637 нм и отбирают алмазные агрегаты с высокой концентрацией NV дефектов по яркой характерной люминесценции в красной области спектра.1. A method of obtaining a diamond structure with nitrogen-vacancy defects, including exposure to purified detonation nanodiamonds by a physical factor, characterized in that the purified detonation nanodiamonds are sintered in the chamber at a pressure of 5-7 GPa and a temperature of 750-1200 ° C for a period of several seconds up to several minutes, they act on the obtained powder of diamond aggregates by laser radiation with a wavelength of less than 637 nm and select diamond aggregates with a high concentration of NV defects by the bright characteristic luminescence in red domain of the spectrum. 2. Способ по п.1, отличающийся тем, что концентрацию NV дефектов в алмазных агрегатах определяют по интенсивности сигналов электронного парамагнитного резонанса. 2. The method according to claim 1, characterized in that the concentration of NV defects in diamond aggregates is determined by the intensity of the signals of electron paramagnetic resonance.
RU2010131763/05A 2010-07-28 2010-07-28 Method of producing diamond structure with nitrogen-vacancy defects RU2448900C2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115201241A (en) * 2022-07-18 2022-10-18 吉林大学 SnBi regulated and controlled by high-voltage technology 2 Te 4 Method for detecting Sn atom defect

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2543184C2 (en) * 2013-04-01 2015-02-27 ЗАО "Алмазный Центр" Synthetic radioactive nanodiamond and method for production thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0275063A3 (en) * 1987-01-12 1992-05-27 Sumitomo Electric Industries Limited Light emitting element comprising diamond and method for producing the same
JP2571795B2 (en) * 1987-11-17 1997-01-16 住友電気工業株式会社 Purple diamond and method for producing the same
RU2215285C1 (en) * 2002-03-13 2003-10-27 Институт геологии Коми научного центра Уральского отделения РАН X-ray/luminescent method determining concentration of nitrogen defects in diamonds
AU2003259418A1 (en) * 2002-09-06 2004-03-29 Element Six Limited Coloured diamond
RU2237113C1 (en) * 2003-06-26 2004-09-27 Винс Виктор Генрихович Method of manufacturing diamonds in fantasy red color
EP1990313A1 (en) * 2007-05-10 2008-11-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to produce light-emitting nano-particles of diamond
US20100104494A1 (en) * 2008-10-24 2010-04-29 Meng Yu-Fei Enhanced Optical Properties of Chemical Vapor Deposited Single Crystal Diamond by Low-Pressure/High-Temperature Annealing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115201241A (en) * 2022-07-18 2022-10-18 吉林大学 SnBi regulated and controlled by high-voltage technology 2 Te 4 Method for detecting Sn atom defect

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